A Combined 380 GHz Mixer/Doubler Circuit Based on Planar Schottky Diodes

The design, fabrication and test of a combined sub-millimeter wave mixer/doubler featuring a 380 GHz sub-harmonic mixer and a 190 GHz frequency doubler on a single quartz based microstrip circuit is reported in this letter. The integrated circuit uses separate flip-chip mounted planar Schottky diode components to perform the two functions. Measurements give best double sideband mixer noise temperatures of 1625 K at 372 GHz, and a corresponding mixer conversion loss of 8 dB. The measured fixed-tuned radio frequency bandwidth extends from 368 to 392 GHz, in good agreement with simulations. This work represents the first demonstration of a single substrate combined submillimeter wave mixer/doubler.     

0.22 THz宽带混频电路研究

基于中国电子科技集团公司第十三研究所的反向并联肖特基二极管,采用电磁场和电路软件联合仿真,完成了0.22 THz分谐波混频电路设计。在固定中频输出频率10 MHz的条件下测试了混频电路的变频损耗,在175~235 GHz共60 GHz带宽内双边带变频损耗小于15 dB,在196 GHz处最佳变频损耗为8.5 dB。测试结果与仿真结果趋势吻合良好。基于冷热负载,测试了分谐波混频电路的噪声温度,当本振功率为5.7 mW时,在216 GHz处双边带噪声温度为1 200 K。     

W-band broadband integrated circuit mixers

Broadband integrated circuit mixers using a crossbar stripline configuration and a finline configuration have been developed. For the crossbar stripline balanced mixer, less than 7.5 dB conversion loss for 15 GHz instantaneous IF bandwidth has been achieved with the LO at 75 GHz and the RF swept from 76 to 91 GHz. For the finline balanced mixer, a conversion loss of 9 to 12 dB over a 19 GHz instantaneous IF bandwidth has been achieved as the RF is swept from 91 to 110GHz.     

A Planar Quasi-Optical Subharmonically Pumped Mixer Characterized by Isotropic Conversion Loss

By using a subharmonically pumped circuit in a quasi-optical planar mixer, we have found it possible to use an LO frequency of one-half the normaf value with little added circuit complexity. This circuit shows conversion loss as low as 8.6dB +- 2 dB at 14 GHz. Through the means of a newly defined quasi-optical mixer parameter called isotiopic conversion loss (L/sub iso/), we find that performance of the mixer system degrades less than 10 dB from an RF input of 14 GHz to 35 GHz, which is more than twice the designed RF frequency.     

Wide-Band Subharmonically Pumped W-Band Mixer in Single-Ridge Fin-Line

A subharmonic mixer is described that has an instantaneous bandwidth of 11 to 14 GHz centered near 95 GHz. A wide bandwidth is achieved by the close integration of a low-capacitance diode mount, printed circuit matching elements, and simple yet effective filters which are uniquely suited to realization in a single-ridge fin-line. The mixer also has a two-terminal shunt mount that will accept two conventional beam-lead diodes or a single dual-junction device. With the latter, a minimum conversion loss of 8.5 dB has been achieved with a drive level of only 4 dBm at 45 GHz.     

Design and Performance of W-Band Broad-Band Integrated Circuit Mixers

Broad-band integrated circuit mixers rising a crossbar suspended stripline configuration and a finline configuration were developed with GaAs beamlead diodes. For the crossbar suspended stripline balanced mixer, less than 7.5-dB conversion loss for 15-GHz instantaneous, IF bandwidth was achieved with the LO at 75 GHz and the RF swept from 76 to 91 GHz. With the LO at 90 GHz, a conversion loss of less than 7.8 dB was achieved over a 14-GHz instantaneous bandwidth as the RF is swept from 92 to 105 GHz. For the finline balanced mixer, a conversion loss of 8 to 12 dB over a 32-GHz instantaneous IF bandwidth was achieved as the RF is swept from 76 to 108 GHz. Integrated circuit building blocks, such as filters, broadside couplers, matching circuits, and varions transitions, were also developed.     

Low conversion-loss fourth subharmonic mixers incorporating CMRC for millimeter-wave applications

Low conversion-loss millimeter-wave fourth subharmonic (SH) mixer designs are proposed in this paper. A millimeter-wave (35 GHz) fourth SH mixer with four open/shorted stubs is designed and measured. The conversion loss is less than 15 dB within a 2.4-GHz bandwidth. The minimum loss is 11.5 dB at the center frequency. By replacing two of the shunt stubs with a dual-frequency in-line stub consisting of newly developed compact microstrip resonating cells (CMRCs), the performance of the SH mixer is improved significantly. At 35 GHz, the conversion loss of this new fourth SH mixer is as low as 6.1 dB with a 3-dB bandwidth of 6 GHz. The conversion loss in the whole Ka-band (26.5-40 GHz) is less than 16 dB. The proposed fourth SH mixer incorporating with CMRCs provides a low-cost high-performance solution for RF subsystem design.     

A high-performance W-band uniplanar subharmonic mixer

A uniplanar subharmonic mixer has been implemented in coplanar waveguide (CPW) technology. The circuit is designed to operate at RF frequencies of 92-96 GHz, IF frequencies of 2-4 GHz, and LO frequencies of 45-46 GHz. Total circuit size excluding probe pads and transitions is less than 0.8 mm ×1.5 mm. The measured minimum single-sideband (SSB) conversion loss is 7.0 dB at an RF of 94 GHz, and represents state-of-the-art performance for a planar W-band subharmonic mixer. The mixer is broad-band with a SSB conversion loss of less than 10 dB over the 83-97-GHz measurement band. The measured LO-RF isolation is better than -40 dB for LO frequencies of 45-46 GHz. The double-sideband (DSB) noise temperature measured using the Y-factor method is 725 K at an LO frequency of 45.5 GHz and an IF frequency of 1.4 GHz. The measured data agrees well with the predicted performance using harmonic-balance analysis (HBA). Potential applications are millimeter-wave receivers for smart munition seekers and automotive-collision-avoidance radars     

A planar subharmonically-pumped 71 GHz receiver with integral feed antenna

A planar, subharmonically-pumped, hybrid millimeter-wave receiver with integral antenna is described. Coplanar waveguide filters are used to isolate the ports and provide image enhancement. The integral planar antenna has 12 dB gain and is suited for use as a feed. The main lobe is normal to the substrate surface. The receiver is designed for an instantaneous bandwidth of 10 GHz. Experiments at 71 GHz indicate single-sideband mixer conversion loss of 6.5 dB. We believe that this represents the highest level of integration yet demonstrated in this frequency range.     

Wideband microstrip balanced mixer

A novel microstrip balanced mixer circuit has been developed with over 40% bandwidth. The circuit uses two coupling rings for RF and LO inputs. A conversion loss of less than 8dB has been achieved for the RF frequency swept from 13 to 23 GHz with an LO signal at 25 GHz.     

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technology has been designed, processed, and characterized. The design is based on a 4 times 100 mum AlGaN/GaN HEMT in a single-ended circuit topology. The mixer has an IF bandwidth of 2 GHz with a conversion loss (CL) of < 8 dB across the X-band with a minimum CL of 6.9 dB at 11 GHz. The large-signal performance is exemplified by IIP 3 levels of 22 and 30 dBm at local oscillator drive levels of 15 and 23 dBm, respectively. A minimum noise figure of 9 dB is achieved at 11.6 GHz.     

Ka Band Broadband Fourth Harmonic Image Rejection Mixer

This paper presents the design and implementation of Ka band broadband hybrid integrated image rejection mixer with a fourth harmonic mixer as unit mixer. Detailed design and analysis have been carried out. The mixer was fabricated by hybrid microwave integrated circuit (HMIC) process based on the thin film ceramic substrate which can reduce the cost compared to monolithic microwave integrated circuit (MMIC). The measured results showed conversion loss less than 11.2 dB and image rejection ratio (IRR) more than 20 dB in 4 GHz RF bandwidth. It can also play the role of up-converter from the test data.     

0.45 THz次谐波混频器优化设计

采用ACST公司准垂直结构混频二极管对0.45 THz次谐波混频器进行优化设计。提出一种电路拓扑结构,使得电路结构紧凑且易于匹配。在对二极管结构分析与建模的基础上,利用射频电路仿真软件ADS及电磁场仿真软件HFSS对混频器电路及结构进行整体优化设计,得到理想情况下单边带变频损耗最小值6 dB,三分贝带宽大于30 GHz,所需本振驱动功率3.8 mW。仿真结果表明,该电路拓扑结构适用于采用反向并联肖特基二极管对实现次谐波混频器设计。     

基于Schottky二极管和Hammer-Head滤波器0.67 THz二次谐波混频器

通过测量肖特基二极管的I-V和C-V曲线,建立等效电路模型.利用三维电磁场和谐波平衡仿真工具分别进行三维结构仿真和电路宽带匹配,最终实现混合集成方式的0.67THz谐波混频器设计.测试结果表明:混频器中心频率为0.685 THz,射频3 dB带宽为47 GHz,双边带变频损耗13.1~16 dB,在685 GHz双边带噪声温度最低值为11500 K.     

A 275–425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology

We report on a 275-425-GHz tunerless waveguide receiver with a 3.5-8-GHz IF. As the mixing element, we employ a high-current-density Nb-AlN-Nb superconducting-insulating-superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 plusmn1 dB. The intrinsic mixer noise is found to vary between 17-19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006.     

一款集成驱动放大器的低变频损耗混频器设计

采用0.5μm GaAs工艺设计并制造了一款单片集成驱动放大器的低变频损耗混频器.电路主要包括混频部分、巴伦和驱动放大器3个模块.混频器的射频(RF)、本振(LO)频率为4～7 GHz,中频(IF)带宽为DC～2.5 GHz,芯片变频损耗小于7 dB,本振到射频隔离度大于35 dB,本振到中频隔离度大于27 dB.1 dB压缩点输入功率大于11 dBm,输入三阶交调点大于20 dBm.该混频器单片集成一款驱动放大器,解决了无源混频器要求大本振功率的问题,变频功能由串联二极管环实现,巴伦采用螺旋式结构,在实现超低变频损耗和良好隔离度的同时,保持了较小的芯片面积.整体芯片面积为1.1 mm×1.2 mm.     

An 86-106 GHz quasi-integrated low noise Schottky receiver

An integrated planar receiver has been developed and tested over the 82-112 GHz bandwidth. The quasi-integrated antenna used in the receiver has a high gain, a high Gaussian coupling efficiency and a wide bandwidth. The mixer design consists of a planar GaAs Schottky diode placed at the feed of a dipole probe suspended inside an integrated horn antenna. The diode uses an etched surface channel and a planar air bridge for reduced parasitic capacitance. At 92 GHz, the room temperature antenna-mixer exhibits a double sideband (DBS) conversion loss and noise temperature of 5.5±0.5 Db and 770 K±50 K, respectively. The measured DSB conversion loss, and noise temperature over a 20-GHz bandwidth (86-106 GHz) remain less than 6.2±0.5 dB and 1000 K±50 K, respectively. The low cost of fabrication and simplicity of the design makes it ideal for millimeter- and submillimeter-wave receivers     

A Novel 94-GHz MHEMT Resistive Mixer Using a Micromachined Ring Coupler

In this letter, we present a high performance 94-GHz millimeter-wave monolithic integrated circuit resistive mixer using a 70-nm metamorphic high electron mobility transistor (MHEMT) and micromachined ring coupler. A novel three-dimensional structure of a resistive mixer was proposed in this work, and the ring coupler with the surface micromachined dielectric-supported air-gap microstrip line structure was used for high local oscillator/radio frequency (LO–RF) isolation. Also, the LO–RF isolation was optimized through the simulation. The fabricated mixer has excellent LO–RF isolation, greater than 29 dB, in 2-GHz bandwidth of 93–95GHz. The good conversion loss of 8.9dB was measured at 94GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using a micromachined ring coupler has shown superior LO–RF isolation and conversion loss.     

A Large-Signal Theory for Broad-Band Frequency Converters Using Abrupt Junction Varactor Diodes

A multicurrent design theory is developed for square law varactor frequency converters having a pump freqnency much greater than the input signal frequency. Efficiency limits are derived for upconverter operation, showing in particular that any broad-band mixer, where all sideband currents around the pump frequency are allowed to flow, must involve a conversion loss of at Ieast 4.4 dB. Consideration of circuit interactions and their effect on upconverter responses leads to a design suitable for systems use in the 5.9-6.4 GHz communication band. Experimental studies of a microstrip realization of this mixer show close agreement with theoretical predictions of its behavior, including a conversion loss less than 7.5 dB over an operating range of 1.3 GHz.     

0.5-25 GHz inductorless single-ended resistive mixer in 0.13 μm CMOS

A wideband inductorless resistive down-conversion mixer in 0.13 μm CMOS technology is presented. The mixer provides a conversion loss of 9?11.7 dB over a frequency range of 0.5?25 GHz at LO power of 6 dBm. The circuit exhibits an input-referred 1 dB compression point and IIP3 of 4.7 and 11.5 dBm, respectively. The mixer consumes only 0.2 mA from 1.5 V for biasing. The isolation between the ports is higher than 10 dB for the whole frequency range. The circuit is realised without inductors, thus offering very wide bandwidth. The chip size including the pads is 0.23 mm², and the circuit active area is only 0.014 mm².