Effect of silicon on oxidation of Ni-15Al alloy

1　INTRODUCTIONChromium, aluminum, and silicon can formsatisfactory protective scales on Ni based alloys.Chromium is expensive and not suitable for use attemperatures above 1 000℃ due to the evaporationof CrO3. It has also been well established that theincorporation of Si in many alloy systems has abeneficial effect on their oxidation resistance[1, 2].In addition, silicon is abundant and cheap. More over, Si has one of the largest solubility in Ni3Alwhere it …     

Selective growth of carbon nanotube on silicon substrates

The carbon nanotube （CNT） growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition（STCVD） of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies, and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns.     

Belgium’s metallurgical research center

Having its roots in a research unit established by the University of Liège and a similar unit organized by a Charleroi steel firm, the Centre National de Recherches Métallurgiques—CNRM—was established in 1947 to combine these two centers. Today it is one of Europe’s important metallurgical research organizations.     

Synthesis of GaN films on porous silicon substrates

A novel and simple method was employed to synthesize GaN films on porous silicon (PS) substrates. GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction (XRD) to identify crystalline structure. Fourier transmit infrared (FTIR) spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy (SEM) and were found to consist of many big crystal grains. Photoluminescence (PL) spectrum was used to illuminate the optical property of the GaN films.     

Removal of iron and aluminum impurities from metallurgical grade-silicon with hydrometallurgical route

A new method for production of solar grade silicon（SoG-Si） at low cost from metallurgical grade silicon （MG-Si） via vacuum metallurgical technique was proposed, which is a promising process to feedstock solar energy silicon material independence of traditional Siemens method. In this procedure, pre-treatment of MG-Si using hydrometallurgical routes to remove the metallic impurities such as iron and aluminum to reduce the production cost is an important process. The influences of acid agents, acid concentration, reaction time and temperature and particle size of raw material ground on the removal efficiency of iron and aluminum impurities were investigated, respectively. The results show that the optimum operation conditions for leaching in acid C are： acid concentration 6 mol/L, temperature 60 ℃, time 4 d, diameter for raw material 50 μm. The removal efficiencies of impurities iron and aluminum are up to 85% and 75%, respectively.     

Cutting performance of multilayer diamond coated silicon nitride inserts in machining aluminum–silicon alloy

Aluminum–silicon (Al–Si) alloy is very difficult to machine and diamond tools are considered by far the best choice for the machining of these materials. Experimental results in the machining of the Al–Si alloy with diamond coated inserts are presented. Considering the fact that high adhesive strength and fine surface morphology play an importance role in the applications of chemical vapor deposition (CVD) diamond films, multilayer technique combining the hot filament CVD (HFCVD) method is proposed, by which multilayer diamond-coating on silicon nitride inserts is obtained, microcrystalline diamond (MCD)/ nanocrystalline diamond (NCD) film. Also, the conventional monolayer NCD and MCD coated inserts are produced for comparison. The as-deposited diamond films are characterized by field emission scanning electron microscopy (FE-SEM) and Raman spectrum. All the CVD diamond coated inserts and uncoated insert endure the aluminum-silicon alloy turning to estimate their cutting performances. Among all the tested inserts, the MCD/NCD coated insert exhibits the perfect behavior as tool wear due to its very low flank wear and no diamond peeling.     

Experimental investigation of laser surface processing of flexure silicon nitride ceramic

A continuous wave carbon dioxide （CO2） laser （λ=10.6 μm） was employed to treat the surface of Si3N4 MOR （modulus of rupture） bars. The effects of the CO2 laser process on physical and mechanical properties of ground Si3N4 samples were investigated. Scanning electron microscopy （SEM） analysis shows that the area occupied by cavities and fracture is decreased by about 49.4% after laser treatments. Cross-sectional metallography results indicate that the secondary YSiAlON phase in the Si3N4 ceramic is softened/melted and flowed into the defects. Four-point bending tests show that the flexural strength of the treated samples is improved to 10.9%. Fractographic analysis show that the fracture origins move from the surface to subsurface. It is concluded that laser surface processing have significant effects on fracture behavior of flexure Si3N4 ceramic.     

Preparation and dielectric properties of porous silicon nitride ceramics

Porous silicon nitride ceramics with difference volume fractions of porosity from 34.1% to 59.2% were produced by adding different amount of the pore-forming agent into initial silicon nitride powder. The microwave dielectric property of these ceramics at a frequency of 9.36 GHz was studied. The crystalline phases of the samples were determined by X-ray diffraction analysis. The influence of porosity on the dielectric properties was evaluated. The results show that α-Si3N4 crystalline phase exists in all the samples while the main crystalline phase of the samples is β-Si3N4, indicating that the αβ transformation happens during the preparation of samples and the transformation is incomplete. There is a dense matrix containing large pores and cavities with needle-shaped and flaky β-Si3N4 grains distributing. The dielectric constant of the ceramics reduces with the increase of porosity.     

Effects of light-mass structural forms on silicon carbide mirror

To reduce the mass of the mirror, silicon carbide was used as the material and four light-mass structures were designed. The properties of SiC mirror open back structure with triangular cell, open back structure with hexagonal cell, sandwich structure with triangular cell, sandwich structure with hexagonal cell, were analyzed by using finite element method. The results of the static, dynamic, and thermal properties of the four kinds of SiC mirror indicate that the surface figures of the SiC mirrors are all satisfactory with the design requirements. The properties of the mirrors with sandwich structure are better than those with open back structure, except the high cost. And the mirror with triangular cell has better combination properties than the mirror with hexagonal cell. Considering the overall performance and the cost, open back structure with triangular cell is the most suitable for the SiC mirror.     

Effect of chemical metallurgical factors on contents of S and P in weld metal during SAW

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Hot tear susceptibility of aluminium–silicon binary alloys

Abstract

Hot tear susceptibility (HTS) of Al–Si alloys in the 0–5–3·0 wt-%Si has been determined using a constrained rod casting test and a quantitative index. Hot tear susceptibility was seen to decrease with increasing silicon content. Hot tear severity varied directly with solidification shrinkageβ, the non-equilibrium freezing range ΔT′, dendrite arm spacing and the effective grain size d _eff. The highest HTS was seen in the Al–0·5%Si alloy with the largest ΔT′, the highest β, the largest dendrite arm spacing, the lowest amount of eutectic phase f _eu, and, hence, the longest local freezing time t _f. Correlation was observed between HTS and the theoretical hot tear criteria Clyne–Davies CSC, Feurer and Campbell CSC _b indices, with Campbell's criterion showing a very strong correlation as HTS _c≈0·03CSC_b + 6 with R²=0·93, where HTS _c is HTS of rod C.     

Orientation dependence of secondary recrystallisation in silicon–iron

Experiments and analyses have been carried out to reach a better understanding of the mechanism of Goss texture formation during the secondary recrystallisation of silicon steel processed by the single cold reduction route. A new experimental approach demonstrated the effect of misorientation on the growth rates of secondary grains and it is shown that these rates are controlled by the proportion of matrix grains having Σ9 CSL relationships to growing secondary grains. It is considered that the Σ9 boundaries have lower energy than general grain boundaries and so are less strongly inhibited by Zener drag. The relative infrequency of Σ9 boundaries around the periphery of secondary grains is seen as evidence for their sacrificial behaviour. Other experiments involving growth of randomly oriented nuclei provide independent support for the important role of Σ9 boundaries during secondary recrystallisation in this steel.     

Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon

The morphology and microstructure of flow pattern defects （FPDs） in lightly boron-doped Czochralski-grown silicon （Cz-Si） crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.     

Preparation and properties of continuous Al-containing silicon carbide fibers

Continuous SiC(OA1) fibers, named KD-A fibers, were prepared by the melt-spinning of ceramic precursor polyaluminocarbosilane, air-curing, and pyrolizing at 1 300℃. These fibers contained small amount of aluminum and 7%-9% oxygen. The KD-A fibers were converted into sintered SiC(A1) fibers, named KD-SA, by sintering at 1 800℃. The fibers were characterized by chemical analysis, tensile strength test, SEM and XRD. The tensile strength, elastic modulus and diameter of the KD-A fibers are 2.6 GPa, 210 GPa, 12- 14μm, respectively. The KD-A fibers have higher thermal stability, more excellent oxidation resistance than the Nicalon fibers. The properties of the KD-A fibers have reached the level of Hi-Nicalon fibers. The tensile strength, elastic modulus and diameter of the KD-A fibers are 2.1 GPa, 405 GPa, 10 - 12μm, respectively. The KD-SA fibers with nearly stoichiometric component have stable performance at high temperature, and better creep resistance than the Tyranno SA fibers.     

Enhancing metallurgical and mechanical properties of friction stir lap welding of Al–Cu using intermediate layer

Abstract

In this paper, the material behaviour and mechanical characteristics of lap joint friction stir welding (FSW) between dissimilar alloys, namely, Cu and Al, is investigated. In order to produce welds of a higher quality, a layer of Cu is anodised on the aluminium alloy. The mechanical and the microstructural characterisations are performed on the welds, which are produced using various welding parameters. Scanning electron microscope with energy dispersive X-ray spectroscopy is used to identify the elemental compositions of phases that are formed. The results reveal that the use of the copper anodised layer prevented formation of brittle intermetallic compounds due to the direct FSW of 6061 aluminium alloy to copper and, as a result, enhanced the weld metallurgical and mechanical properties.     

Microstructure of ternary Zn1-xCdxO films on silicon substrate

Ternary Zn1-x CdxO alloying films were deposited on silicon substrates by a reactive magnetron sputtering method. The structures of the films were characterized by transmission electron microscopy(TEM) and X-ray diffraction(XRD) analysis, respectively. The XRD measurement shows that the wurtzite-type structure of Zn1-xCdxO can be stabilized up to Cd content of x=0.53 without a cubic CdO phase separation. The TEM measurement shows that the films have a columnar structure and the grains are highly c-axis oriented perpendicularly on silicon substrate although some grain boundaries are slightly tilted. High resolution TEM observation indicates that a native layer of amorphous SiO2 exists at the ZnCdO/Si interface and that ZnCdO grains with c-axis preferred orientation nucleate directly on substrate surface.     

Aluminum doping and dielectric properties of silicon carbide by CVD

Cubic β-SiC coating was grown onto the graphite substrate by the normal pressure chemical vapor deposition using CH3SiCl3 （MTS） as a source precursor at 1 150 ℃. But the hexagonal Al4SiC4 phase was generated in the doped process with trimethylaluminium （TMA） as the dopant. Microstructure of the deposit coating as-prepared was characterized by scanning electron microscope （SEM）, which consists of spherical particles with a very dense facet structure. The real component of permittivity ε＇ and dielectric loss tang of the coatings undoped and doped by TMA were carried out by a vector network analyzer in the microwave frequency ranges from 8.2 GHz to 12.4 GHz. The results show that both of them have low values, and doped coating has lower ε＇ and tan δ than undoped one due to the existence of Al4SiC4 impurity phase, which indicates that the desired Al/SiC solid solution at 1 150 ℃ in a normal argon atmosphere is not produced.     

Dielectric properties of doped silicon carbide powder by thermal diffusion

The doped SiC powders were prepared by the thermal diffusion process in nitrogen atmosphere at 2 000℃. Graphite film with holes was used as the protective mask, The dielectric properties of the prepared SiC powders at high frequencies were investigated. The complex permittivity of the undoped and doped SiC powders was measured within the microwave frequency range from 8.2 to 12.4 GHz. The XRD patterns show that before and after heat treatment no new phase appears in the samples of undoped and nitrogen-doped, however, in the aluminum-doped sample the AIN phase appears. At the same time the Raman spectra indicate that after doping the aluminum and nitrogen atoms affect the bond of silicon and carbon. The dielectric real part （ε） and imaginary part （ε＂） of the nitrogen-doped sample are higher than those of the other samples. The reason is that in the nitrogen-doped the N atom substitutes the C position of SiC crystal and induces more carriers and in the nitrogen and aluminum-doped the concentration of carriers and the effect of dielectric relaxation will decrease because of the aluminum and nitrogen contrary dopants.     

Low-temperature synthesis of novel ZnO nanowire microspheres on silicon substrates

Microspheres covered with ZnO nanowires were fabricated by oxidative evaporation of pure zinc powder without catalyst at 450℃. X-my diffraction （XRD） demonstrates that the as-obtained sample can be indexed to high crystaUinity with wurtzite structure. The structural features associated with different growth stages were monitored using scanning elec- tron microscope （SEM）, which described the direct observation nucleation and growth process. Meanwhile, room temperature photoluminescence （PL） spectrum showed a UV emission at -388 nm and a broad green emission at -505 nm. The ZnO nanowires with the self-catalyzed growth mechanism were discussed in detail.