铸造多晶硅的研究进展

近年来,由于低成本和高效率的优势,铸造多晶硅成为最主要的光伏材料之一。现在,其铸造工艺相对成熟：对材料的缺陷和杂质的研究日趋深化,吸杂,钝化及表面结构等技术的应用显著地发问改善了材料的电学和光学性能,实验室水平上,用铸造多晶硅材料制成的太阳电池的转换效率高达18.6%,本文详细阐述了铸造多晶硅材料的研究现状和存在问题,展望今后的发展方向。     

多孔硅的制备及其吸杂处理对电学性能的影响

多孔硅吸杂是减少晶体硅中杂质和缺陷,提高太阳能电池转换效率的有效方法。采用电化学腐蚀方法在单晶硅片上制备多孔硅,通过观察多孔硅的形貌、结构及单晶硅片的电阻率变化,研究不同电流密度制备的多孔硅对吸杂效果的影响,并从多孔硅的结构出发探究多孔硅吸杂的机理。结果表明,随电流密度增加,孔隙率明显增加,多孔硅在电流密度为100mA/cm2时,孔隙率最大;电流密度越大,多孔硅伴随所产生的弹性机械应力增加,晶格常数相应增加,这两个因素都有利于缺陷和金属杂质在多孔硅层-基底界面处迁移和富集,导致单晶硅吸杂后电阻率增大。     

超声低温等离子体在太阳能电池表面的改性作用

传统硅基太阳能制备工艺生产出的多晶硅太阳能电池的光电转换效率在17%左右~([1]),难以突破。利用超声低温等离子体设备对电池表面进行处理,结果显示,经过处理后,多晶硅太阳能电池的峰值功率与光电转换效率提升了5%左右。由此推测,利用超声低温等离子体处理多晶硅电池表面的方法,具有使氮化硅表面钝化、去除磷硅玻璃、清洗电池片以及优化表面绒面等作用,因此,利用该技术可提升太阳能电池片的产品性能。     

太阳电池铸造多晶硅材料的结构缺陷及其控制

铸造多晶硅具有高的性价比,已成为主要的光伏材料,其晶体内的结构缺陷显著影响太阳电池的转换效率。综述了传统铸造多晶硅太阳电池材料和新型黑硅太阳电池材料的研究进展,同时阐述了控制多晶硅中的杂质、晶界、位错的途径及方法。     

多晶硅薄膜的氢等离子体钝化机理研究

研究了氢等离子体钝化多晶硅(poly-Si)薄膜中缺陷态的详细物理机制。结果表明,多晶硅中不同的缺陷态需要不同的氢等离子体基团予以钝化。Hα具有较低的能量,主要钝化悬挂键类缺陷态;H*具有较高的能量,对钝化晶界附近与镍杂质相关的缺陷态更有效;Hβ和Hγ具有的能量最高,可以用来钝化晶粒内部的缺陷态。这些分析和结果有利于优化H等离子体钝化多晶硅的条件,进一步提高多晶硅性能。     

定向凝固法多晶硅杂质控制数值模拟概述

在传统能源日渐消耗及可再生能源开发利用日趋受到重视的形势下,太阳能光伏发电逐渐成为最具潜力的可再生能源技术之一。多晶硅凭借高效率、低成本的优势成为最主要的光伏材料,其铸锭的品质和成本将直接影响太阳能电池的成本和光电转换效率。定向凝固法是制备多晶硅铸锭的重要方法,该方法晶硅生长过程中存在很多问题,包括熔体流动、杂质传输、固液界面的形状和结构以及缺陷。定向凝固过程中引入的有害杂质严重影响晶硅的机械和电学性能,是限制多晶硅光电转换效率的关键因素。长晶过程中定向凝固炉处于高温环境中,内部的传热传质极其复杂,不具备单一的线性关系和可推断性,且难于进行实验测量,因而数值模拟是研究定向凝固过程中传热传质现象的重要方式。降低长晶过程中杂质的含量可从两方面入手:(1)杂质的来源——原材料本身所携带的杂质和长晶过程中生成的杂质;(2)杂质的输运——找到杂质在熔体和氩气中的输运规律,并利用该规律控制杂质的分凝与输运。近年来,从控制杂质产生和输运的角度考虑,国内外对降低多晶硅中有害杂质的研究主要采用以下手段:(1)控制杂质产生,包括减缓坩埚与挡板之间的化学反应、优化顶部坩埚盖板、增设碳化硅涂层等;(2)优化氩气流动,例如使用导流系统、调整炉膛压力和氩气流量;(3)优化熔体对流形式,包括控制熔体流动方式及分凝、调整加热器功率大小及其排布、采用可旋转坩埚和调整石墨碳毡位置等。为进一步降低定向凝固法多晶硅铸锭成本,坩埚尺寸和投料量不断增大,熔体对流、杂质输运和界面形状也更加难于控制,外加磁场则成为控制熔体对流的一种强有力工具,并能进一步控制杂质输运。目前利用外加磁场控制定向凝固法多晶硅杂质的研究仍刚刚起步,具有很大的研究价值,其中电磁场(EMF)和行波磁场(TMF)在控制搅拌熔体对流方面具有巨大潜力,逐渐被用于多晶硅长晶过程。本文在深入分析杂质来源和输运机理的基础上,综述了国内外对多晶硅定向凝固过程中有害杂质的产生、分布、输运以及排出等问题的研究现状,总结了数值模拟中氩气导流系统、加热器以及外加磁场等因素对杂质的影响。     

多晶硅定向凝固温度场模拟的研究进展

对多晶硅太阳能电池而言,决定其光电转化效率的铸锭晶粒尺寸、晶体缺陷、内应力及杂质的形成与分布等与定向凝固过程的温度场密切相关。因此,为提高多晶硅锭质量必须控制和优化定向凝固过程的温度场。运用数值模拟技术对多晶硅定向凝固温度场进行分析,已被国内外学者广泛应用,获得了有参考价值的模拟结果。结合自身工作,综合分析了多晶硅铸锭缺陷与温度场的关系,总结了多晶硅定向凝固数值模拟中,热导率、加热功率、氩气流动状态、外加磁场及定向凝固系统结构等对温度场的影响,可为多晶硅铸锭的制备及质量改进提供参考。     

高效无机CsPbI2Br钙钛矿太阳能电池表面钝化的简便方法

近年来,基于CsPbI2Br的钙钛矿太阳能电池(PVSC)由于能在效率和稳定性之间获得良好平衡而受到越来越多的关注.通过溶液法制备的CsPbI2Br钙钛矿薄膜通常包含各种缺陷,为了获得具有高性能和良好稳定性的钙钛矿太阳能电池,这些缺陷需要被钝化.针对此问题,本文报道了一种简便的缺陷钝化策略,即通过在CsPbI2Br钙钛矿表面旋涂KF溶液来对其进行缺陷钝化.结果表明,沉积的KF大部分位于钙钛矿表面的晶界处,而钙钛矿膜的降解通常始于晶界,因此钝化后的PVSC具有更高的稳定性.稳态和时间分辨光致发光光谱均表明钙钛矿的缺陷被KF显著钝化了.最终,基于KF处理的CsPbI2Br的电池器件能量转换效率(PCE)提高到了15.01%,同时具有较大的开路电压(VOC,1.26 V).与之相比,基于CsPbI2Br的对照器件的PCE仅为14.14%,VOC只有1.18 V.     

光照入射角对太阳能电池输出功率的影响

为了研究在自然条件下,光照入射角对太阳能电池实际输出功率的影响,对单晶硅、多晶硅和非晶硅太阳能电池进行了不同倾角和方位角的测试实验,得到了太阳能电池转换效率关于倾角和方位角的对应关系,并用转换效率的变化曲线分析和说明光照入射角对太阳能电池输出功率的影响.     

钙钛矿太阳能电池的研究进展

钙钛矿太阳能电池自2009年被提出以来取得了迅速的发展,其性能已超过了多晶硅太阳能电池。目前,钙钛矿太阳能电池的光电转换效率已达到20.8%。但是它面临着稳定性差的问题,这严重阻碍了其商业化进程。本文将总结近年来钙钛矿太阳能电池取得的部分研究进展和存在的问题,讨论提高钙钛矿太阳能电池光电转换效率和稳定性的途径,并对未来发展的方向进行了展望。     

Impact of interface microstructure on adhesion force between silver paste and silicon solar cells’ emitter

The adhesion strength between silver paste and silicon solar cell’s emitter is a primary source of long-term degradation in solar modules. In this study, the interface microstructure between screen-printed silver thick-film and silicon solar cells’ emitter was studied. Three kinds of commercial silver pastes were printed on silicon solar cells’ emitter to form different Ag–Si contact structures. The interface microstructure between silver paste and emitter was observed by SEM, while the compositions of Ag thick-film were analyzed by EDX. The deductions we got from SEM and EDX were verified by the pull test for the first time. The results presented in this study give some suggestions to the development of silver paste and crystalline silicon solar cells’ fire-through.     

熔剂精炼结合湿法处理提纯冶金级硅的研究进展

冶金级硅是生产多晶体硅的主要原料,而多晶硅主要用于太阳电池的制备。为了满足制备太阳电池的条件,需精炼冶金级硅以降低其中的杂质含量。熔剂精炼是一种相对能耗低,在杂质硼、磷去除方面具有一定优势的冶金级硅提纯技术,将熔剂精炼和酸浸处理结合起来的方法能进一步提高冶金级硅的提纯效果,对制备低成本太阳能级多晶硅具有重要影响。对目前熔剂精炼提纯冶金级硅的最新研究进展作了较为全面的阐述,详细介绍了国内外研究人员采用Ca-Si、Al-Si、Sn-Si、Cu-Si等熔剂体系精炼去除冶金级硅中杂质的方法、工艺及效果。采用熔剂精炼结合湿法处理提纯冶金级硅,通过调控析出成分,使得金属杂质或非金属杂质间形成易于在晶界处沉淀析出并溶于酸的化合物,实现熔剂精炼与湿法处理对杂质的强化析出及协同去除。最后对熔剂精炼结合湿法处理提纯冶金级硅进行了总结并对其发展做出展望。     

Recent contributions of the Kaiserslautern research group to thin silicon solar cell R&D applying the HW(Cat)CVD

This article reviews the results obtained in Kaiserslautern for research and development on amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon based thin film solar cells as well as heterojunction solar cells applying entirely or mainly the HWCVD. The activities of the group cover the development of appropriate intrinsic and doped a-Si:H and μc-Si:H films for the different solar cell structures, the realization of many types of such structures with different deposition sequences and the detailed study of their stability behavior. Also the preparation of an HW solar cell on medium size area is demonstrated. Initial and stabilized conversion efficiencies are presented and discussed for the different cell structures realized within about ten years of activity. Main focus will be on the recent activities dealing with the integration of μc-Si:H films into solar cell structures and the extensive study of their stability behavior. In addition the degradation of the applied Ta catalyzer was intensively investigated. Finally advantages and disadvantages will be discussed concerning the commercial use of the HWCVD for solar cell fabrication.     

多晶硅铸锭新工艺的研究

多晶硅定向凝固铸锭技术是多晶硅太阳能电池生产的关键技术之一。本文提出多晶硅铸锭新技术-（SRS）法,与传统工艺相比,SRS工艺提纯效果更明显,硅锭中间部分杂质含量更低,硅锭的少子寿命和电阻率更高且分布均匀,大大提高了硅料从硅锭到硅片的利用率。     

Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects

In the last few decades, advances and breakthroughs of carbon materials have been witnessed in both scientific fundamentals and potential applications. The combination of carbon materials with traditional silicon semiconductors to fabricate solar cells has been a promising field of carbon science. The power conversion efficiency has reached 15–17% with an astonishing speed, and the diversity of systems stimulates interest in further research. Here, the historical development and state‐of‐the‐art carbon/silicon heterojunction solar cells are covered. Firstly, the basic concept and mechanism of carbon/silicon solar cells are introduced with a specific focus on solar cells assembled with carbon nanotubes and graphene due to their unique structures and properties. Then, several key technologies with special electrical and optical designs are introduced to improve the cell performance, such as chemical doping, interface passivation, anti‐reflection coatings, and textured surfaces. Finally, potential pathways and opportunities based on the carbon/silicon heterojunction are envisaged. The aspects discussed here may enable researchers to better understand the photovoltaic effect of carbon/silicon heterojunctions and to optimize the design of graphene‐based photodevices for a wide range of applications.     

The materials characteristic and the efficiency degradation of solar cells from solar grade silicon from a metallurgical process route

The rising conventional energy prices have opened up the market for photovoltaic, but the lack of polycrystalline silicon from the chemical route restricts the growth of crystalline silicon solar cells. Recently there is a trend that produces solar cells by using the newly developed solar grade silicon feedstock from a metallurgical process route. In this article, the chemical components of solar grade silicon feedstock are analyzed. The single crystalline silicon solar cells from 100% solar grade silicon feedstock from a metallurgical process route are investigated. The outdoor performance of solar modules encapsulated by such cells is reported. The experimental evidence suggests that such solar cells can achieve the average efficiency higher than 14% on single crystalline silicon wafers. However, the efficiency degradation of solar cells under natural sunlight is significant, and the electrical uniformity of small cells diced from the whole cell is too bad. The metal impurities, oxygen, carbon, and their complexes influence the performance stabilization. The article proves that the module made by such cells has a big cell mismatch loss than normal cells made by electronic grade silicon, even if these cells come from the same sort. And the operating temperature of the cells of the modules is 15–22 °C higher than normal modules under the same conditions. The solar grade silicon feedstock from a metallurgical process route has to be improved farther in order to be used in photovoltaic industry.     

硅半导体太阳能电池进展

太阳能电池是将太阳能直接转化为电能的装置,也是有效利用太阳能最佳途径之一。作为一种绿色能源,尤其是在核电安全问题面临挑战的今天,太阳能电池被认为是解决能源衰竭和环境污染等一系列重大问题的最佳选择。目前,许多国家正在制订中长期太阳能开发计划,准备在21世纪大规模开发太阳能。当前研究最多同时在生产应用的最广泛的当数硅太阳能电池(如单晶硅、多晶硅、非晶硅等)。通过对各类硅太阳能电池的性能、工艺、转化效率以及制备方法等方面作比较并讨论了它们各自性能的优劣,最后结合当前国内外工业化生产状况,对硅太阳能电池研究现状和各自的最新进展作了比较详细的综述,并简要讨论了硅太阳能电池研究和生产上的前景及趋势。     

Spectroscopic characterization of polysilicon solar cells

Polysilicon ingots were made by float zone, using solar grade silicon (SOG-Si) prepared by acid leaching of metallurgical grade silicon (MG-Si). Impurity contents of the MG-Si and SOG-Si were analysed by emission spectroscopy and Fourier transform infrared spectroscopy. The main metal impurities Ca, Al, Fe, Cu, Mn, Mg, V, Ti and Zn and non-metal impurities C, O and B present in the two types of samples were determined. Elemental analysis for a knowledge of the impurity content is important to correlate its effect on the spectral response and diffusion length of minority carrier, and to determine solar cell process reliability. Spectral response and diffusion length for float zone silicon solar cell have been determined.     

Semiconductor applications of thin films deposited by neutralized ion beam sputtering

Thin films deposited by sputtering with a neutralized ion beam source have shown promise for performance improvement in two distinct types of devices: insulating barriers on gallium arsenide and heterojunction solar cells. The source, first developed by NASA for space propulsion, accelerates positive argon ions to 100–800 eV and then neutralizes the beam with electrons from a hot filament. MIS structures formed from tantalum oxide, silicon oxide and silicon nitride on GaAs show very high resistivity and relatively low surface state densities. Indium tin oxides deposited on silicon produce respectable diodes and solar cells with efficiencies as high as 12%.     

Luminescence of solar cells with a-Si:H/c-Si heterojunctions

We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.