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基于对功率三极管实际输出端特性的考虑,提出一种易实现的高效率功放拓扑结构,并通过负载控制理论进行更贴合实际的理论分析。基于CREE公司GaN HEMT CGH40010仿真,在输入为25 dBm,偏置为28 V,带宽在2.98 GHz~3.02 GHz时,输出功率高于38.5 dBm,功率附加效率优于70%,并且在3 GHz时功率附加效率达到73.4%。在15 V~30 V的偏置范围内,漏极效率达到70%以上,仿真结果很好地验证了拓扑的可行性。 相似文献
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微带线E类功率放大器的设计与实现 总被引:2,自引:0,他引:2
E类功率放大器作为开关模式放大器一种,其理想效率为100%。一种简单微带线拓扑网络的E类功率放大器被提出,这种微带线负载网络不仅满足E类功率放大器工作模式的特殊要求,而且对高次谐波有很好的抑制性,同时通过增加合适的偏置微带线可以拓宽放大器的工作带宽。采用ADS软件仿真电路,并在1GHz频率点电路实现了输出功率为4W,漏极效率为73.4%,其中漏极效率效率在63%以上的电路带宽为200MHz。 相似文献
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应用氮化镓高电子迁移率晶体管设计并实现了一种基于F类和逆F类工作模式的双频段功率放大器。首先,分别讨论了F类和逆F类工作模式在理想晶体管和实际晶体管中的差异,结合动态负载线和电压电流波形,对实际晶体管功率和效率下降的原因作了深入分析。在此基础上,提出一种在双频段分别实现F类和逆F类工作模式的输出匹配电路。基于该匹配电路,仿真设计了一款双模式、双频带功率放大器,并进行了实物加工和性能测试。实测结果表明,在L和S频段200 MHz带宽范围内,功放输出功率分别大于41.3 dBm和41.2 dBm,漏极效率分别高于72%和69%,其峰值功率和效率在L频段为41.7 dBm和75.5%,在S频段为41.3 dBm和69.5%。实测和仿真结果吻合度高,证明了提出的设计方法的正确性和有效性。 相似文献
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介绍了一种高效F3/E类功率放大器的设计方法,该放大器将F类功率放大器的谐波控制电路引入逆E类功率放大器的负载网络,以改善放大器性能。此电路结构提升了放大器的功率输出能力,降低了电路对功率放大器管器件漏极耐压特性的要求,增强了器件工作时的安全性。详细阐述了该放大器的设计过程,并给出了负载网络各器件的最佳设计取值方程。选用GaNHEMT器件研制了S频段F3/E类功率放大器测试电路。实测结果表明该放大器在驱动功率为27 dBm时,可获得40.3 dBm的输出功率,具有13.3 dB增益,工作效率高达78.1%,功率附加效率为75.2%。实测结果与仿真结果吻合,验证了设计方法的正确性。 相似文献
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设计了一种串联迭堆式偏置供电的毫米波功率放大器,其漏极供电电压高达+24V。该功率放大器共包含4个单芯片功率放大模块,每个模块承受+6V左右漏极电压。功率合成网络采用一分四的E面波导功分器,模块与功分网络间相互绝缘连接。该功率放大器最终实现的性能指标是:在直流偏置点(+24V,4.2A)条件下,功率放大器在频段26~30GHz内其连续波饱和输出功率大于42.1dBm,功率附加效率大于11.0%。提出了一种毫米波发射机功率输出部分新的构架形式,在模块级别对功率放大器串联馈电进行了首次尝试。 相似文献
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为了解决晶体管寄生参数对逆F(F-1)类功率放大器效率的影响,采用了一种新型的输出谐波控制结构。首先,设计二次和三次谐波控制电路,同时将直流偏置电路加入二次谐波控制电路,降低了电路设计的复杂度。其次,为了解决寄生参数对F-1类功放本征漏极端阻抗的影响,采用一段串行微带线进行寄生补偿。最后,通过微带线和电容进行基波和负载之间的匹配。为验证方法的有效性,采用0.25 μm氮化镓高电子迁移率晶体管(GaN HEMT)工艺,设计了一款工作在5.7 GHz~6.3 GHz的F-1类微波集成电路功放。版图后仿真结果显示,F-1类功放的漏极效率DE为57.2%~62.3%,功率附加效率PAE为51.8%~57.4%,饱和输出功率为39.0 dBm~40.4 dBm,增益为9.0 dBm~10.4 dBm。版图面积为3.2×1.7 mm2。 相似文献
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为了更清晰地了解逆F类功率放大器通过规整漏极电压和电流波形实现高效率的本质,对其漏极电压波形进行了理论分析和仿真验证。结果表明,在仅考虑二、三次谐波,且当谐波比例k=1/4时,v(θ)波形最平坦,最近似于半正弦波。利用电磁软件仿真设计并制作了一款k=0.271的逆F类功率放大器,经测试在输出功率为36.33 dBm时,功率附加效率达到了71%。 相似文献
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O'Sullivan J.A. McCarthy K.G. Murphy A.C. Murphy P.J. 《Microwave and Wireless Components Letters, IEEE》2006,16(4):170-172
This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8V. At 1V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-/spl mu/m BiCMOS process. 相似文献
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本文基于InGaP/GaAs HBT(HBT为异质结双极晶体管)工艺设计了一款高效率的Class F功率放大器。文中首先描述了F类功率放大器的特点和电路原理,然后对放大器的设计过程如匹配电路设计技术、谐波抑制对功率效率的影响,以及偏置电路的设计等问题做了详细的讨论。测试结果表明,设计的功率放大器在电源电压为5V,输出功率为37dBm时,效率达68%。 相似文献
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A 5.8 GHz 1 V Linear Power Amplifier Using a Novel On-Chip Transformer Power Combiner in Standard 90 nm CMOS 总被引:1,自引:0,他引:1
Haldi P. Chowdhury D. Reynaert P. Gang Liu Niknejad A.M. 《Solid-State Circuits, IEEE Journal of》2008,43(5):1054-1063
A fully integrated 5.8 GHz Class AB linear power amplifier (PA) in a standard 90 nm CMOS process using thin oxide transistors utilizes a novel on-chip transformer power combining network. The transformer combines the power of four push-pull stages with low insertion loss over the bandwidth of interest and is compatible with standard CMOS process without any additional analog or RF enhancements. With a 1 V power supply, the PA achieves 24.3 dBm maximum output power at a peak drain efficiency of 27% and 20.5 dBm output power at the 1 dB compression point. 相似文献
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Sowlati T. Salama C.A.T. Sitch J. Rabjohn G. Smith D. 《Solid-State Circuits, IEEE Journal of》1995,30(10):1074-1080
A Class E power amplifier for mobile communications is presented. The advantages of Class E over Class B, Class C, and Class F power amplifiers in a low voltage design are discussed. A fully integrated Class E power amplifier module operating at 835 MHz is designed, fabricated, and tested. The circuit is implemented in a self-aligned-gate, depletion mode 0.8-μm GaAs MESFET process. The amplifier delivers 24 dBm of power to the 50-Ω load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 1.5 times the power dissipated in the transistor 相似文献
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A. R. Dehqan Siroos Toofan Ali Medi 《Analog Integrated Circuits and Signal Processing》2017,93(2):197-203
This paper presents a highly efficient class-EF2 power amplifier in GaAs pHEMT technology with high output power. Drain swing voltage of class-E power amplifier (PA) imposes a restriction on its output power. In this work, using a combination of class-E and F relaxes this limitation which may help in increasing DC supply voltage. Higher DC supply voltage of class-EF2 PA leads to increased output power and efficiency, as output power is proportional to supply voltage. In addition, higher supply voltage permits PA to work under lower current which can cause to reduce power dissipation. Proposed class-EF2 PA is implemented in a single recess AlGaAs–InGaAs pHEMT technology with 0.25-µm gate length; power added efficiency of 52% at 31 dBm output power is achieved at 1.8 GHz. 相似文献
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A two-stage differential linear power amplifier(PA) fabricated by 0.18μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power,efficiency and harmonic performance.Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency(PAE) is 35.4%,the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled.The total area with ESD protected PAD is 1.2×0.55 mm~2.Sy... 相似文献
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《Microwave and Wireless Components Letters, IEEE》2009,19(7):479-481
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Shameli A. Safarian A. Rofougaran A. Rofougaran M. De Flaviis F. 《Microwave Theory and Techniques》2008,56(1):31-38
A two-point modulation technique is presented that improves the performance of nonlinear power amplifiers (PAs) in polar transmitters. In this scheme, the output amplitude modulation is performed by controlling the current of the PA. The current control technique enables the PA to provide wideband amplitude modulation, as well as high power control dynamic range. In addition, the supply voltage of the PA is adjusted based on the output power level. The voltage supply adjustment substantially improves the effective power efficiency of the PA. The voltage supply control is performed using a second-order sigma-delta dc-dc converter, which presents an efficiency of over 95% in its operational range. The PA operates at 900 MHz with maximum output power of 27.8 dBm and power efficiency of 34% at maximum output power. The proposed PA achieves 62-dB power control dynamic range with amplitude modulation bandwidth of over 17.1 MHz. The circuits are fabricated in a CMOS 0.18 mum process with a 3.3-V power supply. 相似文献
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Pornpromlikit S. Jeong J. Presti C. D. Scuderi A. Asbeck P. M. 《Microwave Theory and Techniques》2010,58(1):57-64