共查询到17条相似文献,搜索用时 171 毫秒
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基于共振隧穿理论的GaAs基RTD的设计与研制 总被引:1,自引:1,他引:0
以共振能级的透射系数半峰宽(FWHM)做为共振隧穿二极管(RTD)材料结构设计的依据,对GaAs/AlAs/In0.1Ga0.9As材料体系的RTD进行了设计.用分子束外延(MBE)进行了RTD结构材料制备,X射线双晶衍射(XRD)分析表明,制备的异质结界面光滑、层厚准确.RTD采用台面结构,器件特性测试结果表明,峰值... 相似文献
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用分子束外延技术(MBE)生长了GaAs基共振隧穿二极管(RTD)的材料结构,利用X射线双晶衍射(XRD)方法对材料进行了测试分析.结果表明,材料的双晶衍射峰半峰宽达到16.17",GaAs层与In0.1Ga0.9As层的相对晶格失配率仅为0.015 6%.对实验样品进行了双晶衍射回摆曲线的模拟,模拟结果与测试结果符合较好,说明生长的RTD材料结构与设计相符合.通过制成器件对材料进行验证,室温下对器件进行直流测试,PVCR达到5.1,峰值电流密度达到73.6 kA/cm2. 相似文献
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在系统细致分析RTD材料结构参数与器件特性参数关系的基础上,确立了RTD材料结构的设计原则和设计方法,并对以SI—GaAs为衬底的RTD分子束外延(MBE)材料生长结构进行了设计。所研制出的RTD参数实测结果证实了此设计方法是正确的。 相似文献
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用分子束外延技术在半绝缘GaAs衬底上生长了三种不同材料结构的RTD.主要针对阱结构进行了对比设计,然后对设计结构进行了常温下的I-V特性测试,测试结果中器件的PVCR值最高达到了6,V<,p>降低到了0.41 V.同时常温下测试了其中一种设计结构的敏感单元在四种不同发射极面积下的I-V特性曲线.最后对器件阱结构和发射... 相似文献
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We report on GaAs/AlAs triple-barrier quantum well intraband (TBQWI) heterostructures grown by molecular beam epitaxy (MBE) on n+ GaAs substrate. Heterostructure quality was evaluated by X-ray diffraction and photoluminescence spectrum measurements. The position of the broad peak near 65.84° corresponds well to the diffraction from the (4 0 0) face of AlAs layers assuming intensity of total AlAs spacers and barriers. The 10K photoluminescence (PL) data has a strong peak at 8140 Å. The PL spectrum is dominated by a sharp peak centered at the emission energy of 1.52 eV attributed to the energy of e1-hh bond exciton of GaAs layer. TBQWI heterostructures were grown and processed into resonant tunneling diode (RTD). Room temperature electrical measurement of the TBQWI RTD yielded maximum peak to valley current ratio (PVCR) of 120 with peak current density (Jp) of 2.1 kA/cm2. The high PVCR of this GaAs/AlAs TBQWI RTD is, to the better of our knowledge, one of the higher PVCRs obtained in any intraband tunnel device. 相似文献
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报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性.采用Pspice 8.0软件仿真并设计了振荡电路,测得其振荡频率达200kHz.在(100)半绝缘(SI)GaAs衬底上利用分子束外延(MBE)技术生长了AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构(DBRTS),并采用Au/Ge/Ni/Au金属化和空气桥结构成功加工出了RTD.由于RTD的压阻效应,采用显微喇曼光谱仪标定所加应力大小,对RTD在加压条件下的振荡特性进行了研究,结果表明其弛豫振荡频率大致有-17.9kHz/MPa的改变量. 相似文献
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报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性.采用Pspice 8.0软件仿真并设计了振荡电路,测得其振荡频率达200kHz.在(100)半绝缘(SI)GaAs衬底上利用分子束外延(MBE)技术生长了AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构(DBRTS),并采用Au/Ge/Ni/Au金属化和空气桥结构成功加工出了RTD.由于RTD的压阻效应,采用显微喇曼光谱仪标定所加应力大小,对RTD在加压条件下的振荡特性进行了研究,结果表明其弛豫振荡频率大致有-17.9kHz/MPa的改变量. 相似文献
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Usami A. Kitagawa A. Wada T. Suzuki M. Tokuda Y. Kan H. 《Electron Device Letters, IEEE》1992,13(1):59-60
The spectral responses of GaAs photodiodes fabricated by rapid thermal diffusion (RTD) of Zn are presented. The authors tried controlling the p+-n junction depth by the heating rate of RTD, without extending the diffusion time. It is found that Zn diffuses from the surface to a deeper position as the heating rate increases. Consequently, the spectral response of photodiodes formed by RTD is strongly dependent on the heating rate of RTD. A large improvement in the short-wavelength response between 400 and 800 nm is observed as the heating rate decreases 相似文献
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The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma-assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved.RTA was carried out at 650℃ and its effect was studied by the comparising the roomtemperature PhotoLuminescence (PL) spectra for the non ion-removed (grown without magnets) sample with for the ion-removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion-removed GaInNAs/GaAs SQW after annealing (compared with those for ion-removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ionremoved GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion-removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect-assisted In-Ga interdiffusion rather than defect-assisted N-As interdiffusion. 相似文献
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W. D. Sun Fred H. Pollak Patrick A. Folkes Godfrey Gumbs 《Journal of Electronic Materials》1999,28(12):L38-L41
Low temperature photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors with a low-temperature (LT)
GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum well PL transition energies compared to a structure
with no LT GaAs. Self-consistent calculations of the electron and hole bandstructure suggest that the observed increase in
the redshift in PL energies with increasing quantum well-LT GaAs spacing can be attributed to band bending induced by the
Fermi level pinning at the undoped GaAs/LT GaAs interface and a novel carrier compensation effect of LT GaAs. 相似文献