SG-DBR激光器波长自动测试控制系统

基于LabVIEW虚拟仪器平台,研制了一套可调谐取样光栅分布布拉格反射式(Sampled Grating Distributed Bragg Reflector,SG-DBR)激光器的波长自动测试控制系统.该系统能对四段式SG-DBR激光器进行电流扫描,采集、分析其输出光谱,生成SG-DBR激光器的"波长-电流"数据查询表; 并且通过调用数据查询表,实现对SG-DBR激光器输出波长的控制.     

端面反射对SG-DBR激光器性能的影响

通过传输矩阵模型,理论研究了不同端面反射的存在对取样光栅分布Bragg反射(SG-DBR)镜以及集成半导体放大器(SOA)的SG-DBR镜反射谱的影响,进而研究了端面反射的存在对SG-DBR激光器以及集成SOA的激光器模式的影响,结果表明,端面反射的存在会使取样光栅的各级反射峰由1个分裂为2个甚至多个,并可能使边峰的强度高过零级峰,这将会严重恶化SG-DBR激光器及其集成SOA的激光器模式特性和调谐特性。理论分析与实验结果基本吻合。当端面的反射率小于0.01时,端面反射对于SG-DBR激光器的影响可以忽略不计。     

自动宽调谐的全固态连续单频钛宝石激光器

设计了一种基于LabVIEW控制的自动宽调谐的连续单频钛宝石激光器,通过波长计测量激光器输出波长,用LabVIEW程序读取该波长值并产生控制信号,反馈控制腔内调谐元件双折射滤波片(BRF)的角度,实现对激光器输出波长的调谐。此外,基于波长计测量的系列波长值,构建了BRF角度与激光器输出波长值的一一对应关系,由LabVIEW程序根据不同的波长设定值控制BRF旋转不同的角度,使钛宝石激光器不需要波长计也能实现自动调谐,简化了激光器系统。对实验设计的钛宝石激光器进行自动调谐,测量得到其调谐范围为110nm。     

可调谐单模激光器的制作

对于大容量的波分复用（ＷＤＭ）光通信系统,精确控制波长及波长间隔是系统应用的关键．而对于信道间隔为 ０．８ ｎｍ的 ＷＤＭ系统,要求波长与 ＩＴＵ的标准价差小于±０．０１ ｎｍ．因此,波长可精确调谐的单模激光器成为必需．本文介绍了我们制作的两种波长可调谐的单模激光器：可调谐ＤＦＢ激光器和可调谐ＤＢＲ激光器．其中,可调谐ＤＦＢ激光器采用的是热调谐方式,即改变ＤＦＢ激光器的工作温度,实现了波长向长波方向连续移动 ２．２ ｎｍ;可调谐 ＤＢＲ激光器采用的是注入电流的方式,实现了 ６．５ ｎｍ的准连续调谐． 可调…     

波长可调谐激光器开发现状及应用市场前景

波长可调谐激光器技术特点 波长可调谐激光器可任意控制信道波长,方便准确地控制频道间隔。可调谐激光器主要由具有有源增益区和谐振腔的激光器、改变和选择波长的可调装置、稳定输出波长装置三个基本部分组成。可调谐激光器有电流调谐、温度调谐、包括微电子机械系统机械（MEMS）的机械调谐三种基本技术,一般采用其中的一种或两种技术。表1为几种可调谐激光器技术与特点比较。     

可调谐激光器技术及其在DWDM系统的应用

大容量、长距离DWDM传输系统及动态波长交换DWDM光网络对保护方式、波长分配、波长备份成本的要求,使可调谐激光器变得十分重要。讨论了常用可调谐激光器的技术原理和水平,概要说明了可调谐激光器的市场前景,介绍了可调谐激光器在DWDM系统中的部分应用。     

电调谐半导体激光器波长控制系统

研制了一种基于计算机控制的电调谐半导体激光器波长控制系统.通过调用系统中的半导体激光器"波长-电流"数据查询表,控制驱动单元的电流输出,实现对半导体激光器的输出波长控制.应用该系统对DBR激光器进行了波长控制实验,其波长控制误差不超过±0.02 nm.     

宽调谐光纤激光器在温度传感中的应用

设计实现了一种编程扫描宽调谐掺铒光纤激光器,波长扫描调谐范围超过51nm(1516.83—1568.31nm),调谐步长最小可达0.01nm,通过编程控制波长重复扫描调谐。将该激光器应用于光纤光栅组成准分布式温度传感系统,初步实验实现了对16路共48个点的实时温度监测。     

信息

可调谐二极管激光器　　近五年来,可调谐外腔二极管激光器已经从研究工具发展成为一个广泛应用的关键性器件。由于波分复用（ＷＤＭ）系统设计者提高了系统中的通道数量,已经从激光器中获得增大了的波长控制能力。由于光谱学系统的发展,使用者们需要更多的波长来研究不同的分子吸收,商业应用需要更高的可靠性。可调谐外腔二极管激光器获得成功是因为它面对这些挑战,通信、光谱学和地质学的发展对激光器的需求促进了产品更新换代。由于波分复用系统的通道间隙从２００到５０ＧＨｚ,甚至更窄,因而外腔二极管激光器的波长控制只能步进。…     

利用单边带调制器实现对多波长光纤激光器的高精度射频控制调谐技术

提出了一种利用射频控制信号对多波长光纤激光器输出的多波长信号进行整体精密调谐的方法。通过在多波长光纤激光器腔外放置射频信号控制的单边带(SSB)调制器,实现了65个波长整体精密调谐。通过改变射频驱动信号频率,可以实现多波长整体在150MHz~12GHz范围内的任意调谐,最低对应1.2pm的调谐量。且调谐步长由射频控制信号决定,可精确到1Hz。多波长整体调谐前后,多波长间隔始终保持50GHz不变,各波长的边模抑制比(SMSR)均可达到20dB。     

A Fast Optical Wavelength-Tunable Transmitter With a Linear Thermoelectric Cooler Driver

This letter demonstrates a fast optical wavelength-tunable transmitter based on a sampled grating distributed Bragg reflector (SG-DBR) laser. A high-precision clock distributing circuit has been introduced into the transmitter to guarantee the switching synchronization for driving currents to different tuning sections of the SG-DBR laser. To achieve fast and accurate wavelength switching, a linear thermoelectric cooler driver board has been applied as a part of the transmitter to stabilize the temperature of the SG-DBR laser. Experiments have been performed to show the wavelength switching characteristics of the optical transmitter.      

量子阱混杂单片集成宽可调谐激光器与半导体光放大器

采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次.该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上.     

量子阱混杂单片集成宽可调谐激光器与半导体光放大器(英文)

采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次．该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上．     

量子阱混杂单片集成宽可调谐激光器与半导体光放大器

采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次.该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上.     

Rapid, Precise, and Stable Control of Optical Frequency for SG-DBR LD Using Quartz Etalon

This paper presents rapid, precise, and stable control of optical frequency for sampled-grating distributed Bragg reflector (SG-DBR) laser diode (LD) using a Z-cut quartz etalon supported at the middle point. The optical frequency of SG-DBR LD was controlled by the mode-hop-free three-electrode control method. As a result, stable mode operation and wide continuous tuning range without mode hopping have been realized. A 0.2-ms optical frequency tuning speed with a 4.35-THz tuning range and a 130-MHz control error of the optical frequency was demonstrated. A 1.1-MHz Allan deviation was reached at an integration time of 12 times 10³ s.     

An Optical Phase-Locked Loop Photonic Integrated Circuit

We present the design, fabrication, and results from the first monolithically integrated optical phase-locked loop (OPLL) photonic integrated circuit (PIC) suitable for a variety of homodyne and offset phase locking applications. This InP-based PIC contains two sampled-grating distributed reflector (SG-DBR) lasers, semiconductor optical amplifiers (SOAs), phase modulators, balanced photodetectors, and multimode interference (MMI)-couplers and splitters. The SG-DBR lasers have more than 5 THz of frequency tuning range and can generate a coherent beat for a wide spectrum of frequencies. In addition, the SG-DBR lasers have large tuning sensitivities and do not exhibit any phase inversion over the frequency modulation bandwidths making them ideal for use as current controlled oscillators in feedback loops. These SG-DBR lasers have wide linewidths and require high feedback loop bandwidths in order to be used in OPLLs. This is made possible using photonic integration which provides low cost, easy to package compact loops with low feedback latencies. In this paper, we present two experiments to demonstrate proof-of-concept operation of the OPLL-PIC: homodyne locking and offset locking of the SG-DBR lasers.      

Widely Tunable Separate Absorption and Modulation Wavelength Converter With Integrated Microwave Termination

A widely tunable wavelength converter utilizing a separate absorption and modulation configuration and only dc bias connections is demonstrated. The device integrates an SG-DBR laser with a traveling-wave electroabsorption modulator and an optically pre-amplified receiver and introduces a simplified bias scheme by the inclusion of passive resistor and capacitor circuit elements. We discuss a the design of these passive elements and their compatibility with fabrication of photonic integrated circuits. The device demonstrates over 12 GHz optical bandwidth and error free 10 Gb/s wavelength conversion is achieved with less than 2.5 dB power penalty over 25 nm of output tuning.     

Influence of mode competition on the fast wavelength switching ofan SG-DBR laser

Because the sampled grating distributed Bragg reflector (SG-DBR) laser is among the most attractive sources for wavelength division multiplexing (WDM) systems, it is important and necessary to investigate its wavelength switching characteristics. This behavior will set the capability limits for reallocation in wavelength-routed optical networks. In this paper, that mode competition plays an important role in the wavelength switching dynamics of DBR-type tunable lasers is confirmed experimentally. By using a time-resolved spectrum technique, the loss-dependent mode competition behavior has been directly observed, for the first time, from measurements of wavelength switching on an SG-DBR laser     

Thermal effects in monolithically integrated tunable laser transmitters

We investigate thermal effects in widely tunable laser transmitters based on an integrated single chip design. The chip contains a sampled-grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with a semiconductor optical amplifier (SOA) and an electroabsorption modulator (EAM). The thermal impedance of the ridge structure is evaluated through simulation and experiment, and thermal crosstalk between sections is examined. Heating of the mirrors by neighboring sections is found to result in unintentional offsets in wavelength tuning. Thermal effects in the EAM are examined in depth. A positive feedback mechanism causes local temperature rise at the modulator input, with the potential to trigger catastrophic thermal runaway. A self-consistent finite-element model is developed to simulate the EAM temperature profile and device performance. This model is used to optimize the device, resulting in integrated EAMs that achieve a dissipated power limit in excess of 300mW.