Structural and electronic properties of the interface between the high-k Oxide LaAlO3 and Si(001)

The structural and electronic properties of the LaAlO(3)/Si(001) interface are determined using state-of-the-art electronic structure calculations. The atomic structure differs from previous proposals, but is reminiscent of La adsorption structures on silicon. A phase diagram of the interface stability is calculated as a function of oxygen and Al chemical potentials. We find that an electronically saturated interface is obtained only if Al atoms substitute some of the interfacial Si atoms. These findings raise serious doubts whether LaAlO3 can be used as an epitaxial gate dielectric.     

Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition

Thin films composed of alternating Al/Cu/Al layers were deposited on a (111) Si substrate using pulsed laser deposition (PLD). The thicknesses of the film and the individual layers, and the detailed internal structure within the layers were characterized by means of transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and energy-filtered TEM (EFTEM). Each Al or Cu layer consists of a single layer of nano-sized grains of different orientations. EFTEM results revealed a layer of oxide about 2 nm thick on the surface of the Si substrate, which is considered to be the reason for the formation of the first layer of nano-sized Al grains. The results demonstrate that the PLD technique is a powerful tool to produce nano-scale multilayered metal films with controllable thickness and grain sizes.     

Epitaxial growth of Al on Si(1 1 1) with Cu buffer layers

The structure of thin Al films grown on Si(1 1 1) with thin Cu buffer layers has been investigated using synchrotron radiation photoemission spectroscopy. A thin Cu(1 1 1) layer between the Si(1 1 1) substrate and an Al film may enhance quantum well effects in the Al film significantly. The strength of quantum well effects has been investigated qualitatively with respect to the thickness of the Cu buffer layer and to the Al film thickness. Deposition of Cu on Si(1 1 1)7 × 7 leads to formation of a disordered silicide layer in an initial regime before a well-ordered Cu(1 1 1) film is formed after deposition of the equivalent of 6 layers of Cu. In the regime below 6 layers of Cu the disorder is transferred to Al layers subsequently grown on top. The initial growth of up to 8 layers of Al on a well-ordered Si/Cu(1 1 1) layer leads to a disordered film due to the lattice mismatch between the two metals. When the Cu buffer layer and the Al over-layer are above 6 and 8 layers, respectively the Al film shows sharp low energy electron diffraction patterns and very sharp quantum well peaks in the valence band spectra signalling good epitaxial growth.     

Time evolution of the microstructures of LaAlO3 thin films grown on Si substrates

The structure and stability of amorphous LaAlO₃ thin films deposited on Si substrates were investigated by an X-ray reflectivity technique. The results show that the film/substrate interface contains a La_xAl_yO_zSi layer and a SiO_x layer. X-ray reflectivity profiles showed a continuous change after the films were exposed to ambient air for six months at room temperature. The X-ray reflectivity simulations suggest a diffusion of La and Al (mostly La) from the LaAlO₃ layer to the La_xAl_yO_zSi layer. This process stopped after about six months, and then the films reached a relative equilibrium state. Moreover, post-air-exposure annealing at 300 °C in air atmosphere could not change the final distributions of La and Al along the normal to the film’s substrate. On the other hand, the leakage-current density slightly decreases after annealing at 300 °C, which might be caused by the decrease of oxygen vacancies in the films. PACS 61.10.Kw; 77.55.+f; 68.60.Dv     

利用微带谐振技术研究MgB_2/Al_2O_3和YBa_2Cu_3O_(7-x)/LaAlO_3超导薄膜的微波性质(英文)

利用微带谐振技术研究了MgB2/A12O3和YBa2Cu3o7-X/LaAlO3(YBCO/LAO)超导薄膜的微波性质.一个颗粒尺寸模型被用来分析超导薄膜的穿透深度和表面电阻.结果表明,对于高质的YBCO/LAO,微波性质主要由颗粒决定.对于低质的MgB2/Al2O3,该薄膜的微波性质主要由颗粒边界决定.     

Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy

The interfacial structures of HfO₂ and HfAlO thin films on Si have been investigated using spatially resolved electron energy-loss spectroscopy. We have found that interfaces are not atomically sharp, and variation in the symmetry of the local atomic coordination lasts for a couple of monolayers for both the as-deposited HfO₂ and the HfAlO samples. Annealing of the HfO₂ film in the oxygen environment leads to the formation of a thick SiO₂/SiO_x stack layer in-between the original HfO₂ and the Si substrate. As a comparison, the interfacial stability is significantly improved by Al incorporation into the HfO₂ film (forming HfAlO), which effectively reduced/eliminated the interfacial silicon oxide formation during the oxygen annealing process. The mechanism of the high-k film/substrate stabilization by Al incorporation is discussed based on the experimental results.     

利用电子束蒸发制备铝隧道结工艺研究

采用电子束蒸发的方法在Si片上制备超导铝(Al)薄膜。利用X射线衍射和直流四电极电阻法分别测试了厚度从100埃到5000埃的Al薄膜物向组成,超导转变温度(Tc)和临界电流密度(Jc)。当Al薄膜厚度大于500埃时,超导转变温度Tc=1.2K。电子束蒸发制备的Al薄膜性能良好,具有较高的结晶质量,为制备Al超导隧道结奠定了良好基础。对小面积的Al超导隧道结工艺进行了研究,该超导隧道结两层的超导体材料为Al薄膜,中间势垒层材料为Al2O3。其中Al薄膜利用电子束蒸发制备,势垒层通过直接氧化Al薄膜表面实现,该工艺和采用直接蒸发氧化物薄膜工艺相比不仅简单而且能有效防止势垒层不连续造成的弱连接。     

Enhancement of the thermoelectric power factor of MnSi1.7 film by modulation doping of Al and Cu

It is well known that aluminum (Al) and copper (Cu) are acceptor impurities with shallow- and deep-energy levels in silicon (Si), respectively. The thermoelectric power factor of Al and Cu codoped Si film is larger than that of only Al-doped Si film. In this report, the Al and Cu codoped Si layer, Si: (Al + Cu), is used as a barrier layer, while a higher manganese silicide (HMS, MnSi_1.7) layer is used as a well layer to enhance the power factor of MnSi_1.7 film. It is found that the Al and Cu modulation doped MnSi_1.7 film, Si: (Al + Cu)/MnSi_1.7, has a power factor almost two times larger than that of only Al modulation doped MnSi_1.7 film, Si: Al/MnSi_1.7. It is also found that an undoped Si spacer layer between the Si: (Al + Cu) barrier layer and the MnSi_1.7 well layer can enhance the power factor further. Finally, it is demonstrated that the MnSi_1.7 film with double Si barrier layers, Si: (Al + Cu)/MnSi_1.7/Si: (Al + Cu), has the highest power factor, 1423×10^?6 W/m?K² at 783 K, which is very close to that of MnSi_1.7 bulk material.     

Reversible structural transition in epitaxial manganite film

A reversible structural transition of an epitaxial La(2/3)Sr(1/3)MnO3 film deposited on a LaAlO3 substrate has been investigated by means of in situ high-resolution transmission electron microscopy and electron diffraction, combined with image and diffraction calculations. We observe that the crystallographic symmetry of the film can be lowered via electron beam irradiation, leading to a rhombohedral-monoclinic transition. This transition can be attributed to the cooperating effect of the mismatch stress and the irradiation-induced thermal stress.     

Study of Ni/Si(1 0 0) solid-state reaction with Al addition

The characteristics of Ni/Si(1 0 0) solid-state reaction with Al addition (Ni/Al/Si(1 0 0), Ni/Al/Ni/Si(1 0 0) and Al/Ni/Si(1 0 0)) is studied. Ni and Al films were deposited on Si(1 0 0) substrate by ion beam sputtering. The solid-state reaction between metal films and Si was performed by rapid thermal annealing. The sheet resistance of the formed silicide film was measured by four-point probe method. The X-ray diffraction (XRD) was employed to detect the phases in the silicide film. The Auger electron spectroscopy was applied to reveal the element profiles in depth. The influence of Al addition on the Schottky barrier heights of the formed silicide/Si diodes was investigated by current-voltage measurements. The experimental results show that NiSi forms even with the addition of Al, although the formation temperature correspondingly changes. It is revealed that Ni silicidation is accompanied with Al diffusion in Ni film toward the film top surface and Al is the dominant diffusion species in Ni/Al system. However, no Ni_xAl_y phase is detected in the films and no significant Schottky barrier height modulation by the addition of Al is observed.     

多层高温超导薄膜研究

文中以LaAlO3为衬底,制作了一层Tl-2212高温超导薄膜,并在薄膜上生长一层较薄的CeO2缓冲层,然后再在上面生长一层Tl-2212高温超导薄膜。经过测量,研究了多层膜结构对超导薄膜临界电流密度的影响。结果显示,在缓冲层的结晶过程中超导薄膜的晶格受到影响,结晶过程中的处理很容易诱导上面一层Tl-2212超导薄膜产生杂相,导致临界电流密度降低。     

Study of interfacial oxide layer of LaAlO3 gate dielectrics on Si for metal–insulator–semiconductor devices

Lanthanum aluminate (LAO) thin films were deposited on silicon by pulsed-laser deposition. It was found that oxygen partial pressure played an essential role in the formation of an interfacial layer. The films deposited in nitrogen at a pressure of 20 Pa had no interfacial layer. However, an interfacial layer was observed in the films deposited in 1×10^-2 Pa atmosphere. According to the thickness of the LAO film and interfacial layer and the measured capacitance, it could be deduced that the interfacial layer was not pure SiO₂. Auger electron spectroscopy, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy depth analyses indicated that the interfacial layer was La–Al–silicate rather than pure silicon oxide and that the La and Al concentrations in the interfacial layer had gradients from the LAO layer to the substrate. PACS 79.61.Jv; 77.55.+f; 81.15.Gh     

化学溶液沉积法制备涂层导体SmBiO3（SBO）缓冲层的研究

通过740-820℃之间进行低温成相,分别在氩气和空气中LaAlO3（LAO）单晶基底上沉积得到了有较大应用前景的涂层导体SmBiO3（SBO）缓冲层.740-800℃所得的缓冲层c轴取向良好,致密、平整、无裂纹.当温度达到820℃时,SBO表面开始出现裂缝.SBO薄膜的相组成和微结构利用XRD和SEM进行分析.研究结...     

Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.     

离子注入的铝在Si(100)表面的偏析及其引起的纳米团簇和合金晶粒形成现象的实验研究

通过高温退火注入了铝的Si(100)样品,探讨偏析出来的铝在硅表面的热力学行为.由900℃的退火实验发现,偏析出来的铝原子一方面形成Si(100)基底的外延铝膜和铝岛,另一方面与硅原子结合形成尺度约为2—3nm的铝硅团簇.而1200℃的退火实验显示,铝和硅的快速冷凝形成了立方晶系的Al₄Si合金晶粒、尺度约为20—30nm.细小的铝硅团簇在结构上独立于样品基底并且趋于聚集成团,很可能是在高温退火和快速降温过程中形成铝硅合金晶粒的前驱. 关键词： 硅表面 铝掺杂 团簇 4Si')" href="#">Al₄Si     

Pd-Si薄膜固相反应的透射电子显微镜研究

本工作利用透射电子显微术研究了Pd-Si薄膜固相反应的初始生成相及生成相Pd₂Si与(111)取向Si衬底的取向关系随Pd膜厚度、退火温度等因素的变化规律。实验结果表明:在衬底保持室温的条件下,Pd沉积到Si(111)上时也能够生成一层外延的Pd₂Si,其厚度足以在常规的选区电子衍射中产生明显的信号。在170℃退火时,Pd-Si反应即可持续到生成200nm厚的外延的Pd₂Si。在Pd膜厚度为400nm的条件下,Pd₂Si与Si(111)衬底的取向关系为[0001]_(Pd2Si)轴织构。 关键词：     

Study of thermal oxidation of LaSix/Si(1 0 0) by grazing incidence electron-induced X-ray emission spectroscopy

A new X-ray emission spectroscopy (XES) apparatus for analyzing nondestructively the chemical states of the inner regions of layered materials was constructed. Using electron excitation at grazing incidence, it also enables the analyzing depth to be confined to the surfaces of the materials. The apparatus was employed to the study of oxidation of a La silicide layer formed on a Si substrate. By comparing the Si Kβ emissions with results by XPS analysis, it was concluded that the Si Kβ emission band of the oxidized sample at the excitation energy of 3.0 keV represents the Si 3p density of states (DOS) of a LaSiO mixed oxide. The variations of the spectra at increasing electron beam energies were compared with probing depths calculated by an empirical model. This result indicates that we can analyze the chemical states of a mixed oxide layer of one to two tens angstroms in thickness, and nondestructively probe into the depth of about several tens angstroms.     

ZnO nanorods/plates on Si substrate grown by low-temperature hydrothermal reaction

The zinc oxide (ZnO) nanorods/plates are obtained via hydrothermal method assisted by etched porous Al film on Si substrate. The products consist of nanorods with average diameter of 100 nm and nanoplates with thickness of 200-300 nm, which are uniformly distributed widely and grown perpendicularly to the substrate. The ZnO nanoplates with thickness of 150-300 nm were grown on Si substrate coated with a thin continuous Al film (without etching) in the same aqueous solution. The growth mechanism and room temperature photoluminescence (PL) properties of ZnO nanorods/plates and nanoplates were investigated. It is found that the introduction of the etched Al film plays a key role in the formation of ZnO nanorods/plates. The annealing process is favorable to enhance the UV PL emissions of the ZnO nanorods/plates.     

Read—out of a read—only super—resolution optical disc with a Si mask

A novel read-only super-resolution optical disc structure (substrate/mask layer/dielectric layer) is proposed in this paper. By using a Si thin film as the mask layer, the recording pits with a diameter 380nm and a depth 50nm are read out on the dynamic measuring equipment; the laser wavelength α is 632.8nm and the numerical aperture is 0.40. In the course of reproduction, the laser power is 5mW and the rotation velocity of the disc is 4m·s^-1. The optimum thickness of the Si thin film is 18nm and the signal-to-noise ratio is 32dB.     

Progress in research of GaN-based LEDs fabricated on SiC substrate

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated.It is found that the Al GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with Al N buffer layer.To increase the light extraction efficiency of GaN-based LEDs on Si C substrate,flip-chip structure and thin film flip-chip structure were designed and optimized.The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 m A.At 350 m A,the output power,the Vf,the dominant wavelength,and the wall-plug efficiency of the blue LED were 644 m W,2.95 V,460 nm,and 63%,respectively.