Effect of polymers doping on flux pinning behavior of MgB2

The effects of polymers doping on irreversibility field (H_irr) and critical current density (J_c) of MgB₂ have been investigated in this work. It is found that both J_c, and H_irr, are improved by doping at relative lower temperature region. The J_c−B curves of all samples studied in this work are well fitted using J_c(B) formula in percolation model. The values of upper critical field anisotropy (γ) are obtained from the fitting result at various temperatures. It is observed that values of γ for polymers doping samples are reduced at these temperatures. This is considered to be responsible for the enhancement of values of J_c for doped samples. Moreover, the percolation threshold, p_c, is found to be enhanced with increasing temperature. It is believed that the grain boundary pinning is still dominating in MgB₂, while the deviation of experimental data from the theoretical values is due to the percolation of suppercurrent in polycrystalline MgB₂.     

Correlated vortex pinning in Si-nanoparticle doped MgB2

The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB₂ tapes have been measured at temperatures T≥28 K in magnetic fields B≤0.9 T. The irreversibility line B_irr(T) for doped tape shows a stepwise variation with a kink around 0.3 T. Such B_irr(T) variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field B_?) and is very different from a smooth B_irr(T) variation in undoped MgB₂ samples. The microstructure studies of nanoparticle doped MgB₂ samples show uniformly dispersed nanoprecipitates, which probably act as a correlated disorder. The observed difference between the field variations of the critical current density and pinning force density of the doped and undoped tape supports the above findings.     

Pinning mechanism in carbon nanotube doping of MgB2 superconductor

MgB_1.9C_0.1 samples are synthesized under the ambient pressure (AP) and high pressure (HP), respectively. The further studies demonstrate different field-dependence of the critical current density J_c(H) in each sample. In the view of two-gap superconductivity in these samples, δT_c pinning (resulting from the spatial fluctuations of the transition temperature) is dominant in the AP sample, while in the HP sample, both δT_c and δl pinning (due to the mean-free-path fluctuations) act together and their contributions vary with temperature. Besides the improvement of H_c2(0), due to the different pinning mechanism, J_c(H) of the HP sample shows a slower decay with the increasing fields than that of the AP sample in high fields, which suggests a possible method of retarding the rapid decay of J_c(H) under elevated fields.     

Effect of sorbic acid doping on flux pinning in bulk MgB2 with the percolation model

In this paper, we study the doping effect of sorbic acid (C₆H₈O₂), from 0 to 20 wt.% of the total MgB₂, on critical temperature (T_c), critical current density (J_c), irreversibility field (H_irr) and crystalline structure. The XRD patterns of samples show a slightly decrease in a-axis lattice parameter for doped samples, due to the partial substitution of carbon at boron site. On the other hand, we investigate the influence of doping on the behavior of flux pinning and J_c(B) in the framework of percolation theory and it is found that the J_c(B) behavior could be well fitted in high field region. The two key parameters, anisotropy and percolation threshold, play very important roles. It is believed that the enhancement of J_c is due to the reduction of anisotropy in high field region.     

Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

Microstructural and superconducting properties of C6H6 added bulk MgB2 superconductor

The effect of aromatic hydrocarbon (benzene, C₆H₆) addition on lattice parameters, microstructure, critical temperature (T_c), critical current density (J_c) of bulk MgB₂ has been studied. In this work only 2 mol% C₆H₆ addition was found to be very effective in increasing the J_c values, while resulting in slight reduction of the T_c. J_c values of 2 mol% C₆H₆ added MgB₂ bulks reached to 1.83×10⁶ A/cm² at 15 K and 0 T. Microstructural analyses suggest that J_c enhancement is associated with the substitution of carbon with boron and which also results in the smaller MgB₂ grain size. The change in the lattice parameters or the lattice disorder is claimed as a cause of the slight reduction in the T_c by carbon addition. We note that our results show the advantages of C₆H₆ addition include homogeneous mixing of precursor powders, avoidance of expansive nanoadditives, production of highly reactive C, and significant enhancement in J_c of MgB₂, compared to un-doped samples.     

Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

Nano-diamond and titanium concurrently doped MgB₂ nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J_c–H behavior and pinning force scaling features of MgB₂ have been investigated. Although T_c was slightly depressed, J_c of MgB₂ have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J_c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB₂, a unique nanocomposite in which TiB₂ forms a thin layer surrounding MgB₂ grains whereas nano-diamond particles were wrapped inside the MgB₂ grains. Besides, nano-diamond doping results in a high density stress field in the MgB₂ samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB₂ system.     

Superconductivity of powder-in-tube Sr0.6K0.4Fe2As2 wires

Nb-sheathed Sr_0.6K_0.4Fe₂As₂ superconducting wires have been fabricated using the powder-in-tube (PIT) method for the first time and the superconducting properties of the wires have been investigated. The transition temperature (T_c) of the Sr_0.6K_0.4Fe₂As₂ wires is confirmed to be as high as 35.3 K. Most importantly, Sr_0.6K_0.4Fe₂As₂ wires exhibit a very weak J_c-field dependence behavior even the temperature is very close to T_c. The upper critical field H_c2(0) value can exceed 140 T, surpassing those of MgB₂ and all the low temperature superconductors. Such high H_c2 and superior J_c-field performance make the 122 phase SrKFeAs wire conductors a powerful competitor potentially useful in very high field applications.     

Enhancement of the upper critical field of MgB2 by carbon-doping

We have measured the temperature dependence of the upper critical field, H_c2(T), of carbon-doped MgB₂. H_c2(T) does not follow the well-known Werthamer-Helfand-Hohenberg (WHH) result for a one-gap dirty superconductor but can be described well by the result of a recent theoretical calculation for a two-gap dirty superconductor. H_c2(0) of the carbon-doped material is determined to be between 29 and 38 T, substantially higher than that of pure MgB₂ (15-23 T).     

Effect of C and SiC additions into in situ or mechanically alloyed MgB2 deformed in Ti sheath

Effect of 3.4 wt.% C and 5 wt.% SiC doping into the standard in situ (IN) process and mechanically alloyed (MA) MgB₂ was studied. Powders of IN and MA process were carried out in air and in argon filled glove box, respectively. Wire samples were prepared by two-axial rolling deformation of IN and MA powders inside the Ti tube. Titanium as sheath material allows to use higher sintering temperatures, we used 700 °C and 800 °C for 30 min in Argon. Critical current densities (J_c) were measured at variable temperatures 4.2 K, 10 K, 15 K and 20 K in the external magnetic fields ranging to 15 T. Critical temperatures, upper critical fields and irreversibility fields of IN and MA with SiC and C additions are compared and discussed. The highest transport properties were observed for wires with MA SiC doped MgB₂ in the whole scale of temperatures 4.2–20 K. Upper critical field was rapidly enhanced in the case of carbon doped MA samples at 4.2 K. MA samples have shown decreased J_c values for higher temperatures (15 K, 20 K), in some case even worse than for the not doped reference IN sample. Carbon substitution and grain connectivity of analyzed samples are compared and discussed. Presented results show that for 20 K applications some new ways (additions) have to be found for increasing the J_c substantially.     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.     

Superconductivity in porous MgB2

Porous magnesium diboride samples have been prepared by the heat treatment of a pressed mixture of Mg and MgB₂ powders. It was found that linked superconducting structure is formed down to the minimum normalized density γ_c=d/d₀≅0.16 (percolation threshold), where d is the density of MgB₂ averaged over the sample, d₀=2.62 g/cm³ is the X-ray density. Lattice parameters and critical temperature of the porous sample decrease with increasing porosity (decreasing γ) and T_c2≅32 K is minimal at γ_c. The grain boundaries in the porous samples are transparent for the current and J_c∼3×10⁵ A/cm² in self field at T=20 K in the samples with γ∼0.24.     

AuB2 in comparison to superconducting MgB2-an ab initio study

The noble metal diboride AuB₂, a potential candidate for superconductor, is studied by an ab initio method in comparison to the superconducting MgB₂. The results, described in terms of equilibrium lattice constants, bulk modulus, pressure derivative of bulk modulus and their in- and out-of-plane linear values, volume coefficient of T_c, density of states, band structure, show some similarity as well as dissimilarity between the behaviour of the two compounds. The implications for the behaviour are discussed.     

Effect of heating rates on microstructure and superconducting properties of pure MgB2

The influence of different heating rates, ranging from 5 to 30 K min⁻¹, on the microstructure and superconducting of the MgB₂ bulk was investigated. No obvious variation in the grain size was found for the samples heated from 5 K min⁻¹ to 20 K min⁻¹ except for the changes in morphologies. Moreover, the grain refinement was obtained under the heating rate of 30 K min⁻¹. The critical current density (J_c) suggested that the 5 K min⁻¹ sample had the best performance in high field. Here, the differential thermal analysis (DTA) was employed to analyze the kinetics of MgB₂ phase formation with the different heating rates. The results showed that the large amount of MgB₂ formed at low temperature, which lead to compact structures under the slow heating rate. The fast heating rate would promote the evaporation of Mg at high temperature, which was considered to generate the vacancy and impurities in the sample.     

Vortex lattice in Bi2Sr2CaCu2O8+δ well above the first-order phase-transition boundary

Measurements of non-local in-plane resistance originating from transverse vortex-vortex correlations have been performed on a Bi₂Sr₂CaCu₂O_8+δ high-T_c superconductor in a magnetic field up to 9 T applied along the crystal c-axis. Our results demonstrate that a rigid vortex lattice does exist over a broad portion of the magnetic field-temperature (H-T) phase diagram, well above the first-order transition (FOT) boundary H_FOT(T). The results also provide evidence for the vortex lattice melting and vortex liquid decoupling phase transitions, occurring above the H_FOT(T).     

Comparative structural and photoluminescent study of Eu-doped La2O3 and La(OH)3 nanocrystalline powders

Eu³⁺-doped La₂O₃ nanocrystalline powder was prepared by polymer complex solution method and further used for preparation of Eu³⁺-doped La(OH)₃. Structural and optical characterization was carried out by powder X-ray diffraction and photoluminescent spectroscopy. XRD measurements confirmed the formation of hexagonal La₂O₃ and its recrystallization into La(OH)₃ in a humid atmosphere. Excitation spectra show redshift of host lattice and charge transfer emission bands in La(OH)₃ while bands that correspond to Eu³⁺f–f transitions are placed at same wavelengths in both samples. Photoluminescence spectra recorded over the temperature range from 10 K to 300 K show that intensities of emission lines in Eu³⁺-doped La₂O₃ do not depend on temperature as much as in La(OH)₃ sample. Observed dominant ⁵D₀→⁷F₂ and markedly visible ⁵D₀→⁷F₀ emissions in doped La₂O₃ indicate that Eu³⁺ ion is located in a structural site without an inversion center. On the other hand, in Eu³⁺-doped La(OH)₃⁵D₀→⁷F₀ transition is barely visible while ⁵D₀→⁷F₂ is not prominent, and with temperature drop three ⁵D₀→⁷F_J (J=1, 2, 4) transitions become almost of the same intensity. In both La₂O₃ and La(OH)₃ structures Eu³⁺ ion replaces La³⁺ in non-centrosymmetric C_3v and C_3h crystallographic sites, respectively, and difference in symmetry of the crystal field around europium ion is explained by comparing shape and volume of these sites. Decay times of the ⁵D₀- level recorded over the temperature range 10−300 K revealed that emission lifetime values in La₂O₃ (~0.7 ms) are almost two times higher than in La(OH)₃ (~0.4 ms), and unlike in La₂O₃, lifetime in La(OH)₃ is temperature dependent.     

Electron-phonon interaction in NbB2: a comparison with MgB2

We present a comparison of electron-phonon interaction in NbB₂ and MgB₂, calculated using full-potential, density-functional-based methods in P6/mmm crystal structure. Our results, described in terms of (i) electronic structure, (ii) phonon density of states F(ω), (iii) Eliashberg function α²F(ω), and (iv) the solutions of the isotropic Eliashberg gap equation, clearly show significant differences in the electron-phonon interaction in NbB₂ and MgB₂. We find that the average electron-phonon coupling constant λ is equal to 0.59 for MgB₂ and 0.43 for NbB₂, leading to superconducting transition temperatures T_c at around 22 K for MgB₂ and 3 K for NbB₂.     

Reversible magnetization and irreversibility line of tri-layer superconductor Ba2Ca2Cu3O6(O,F)2 with Tc∼108 K

We report magnetization measurements of grain-aligned Ba₂Ca₂Cu₃O₆(O,F)₂ with T_c?108 K. The interlayer distance of the material is the shortest among known tri-layer superconductors. Unexpectedly, the magnetization data show that the coupling strength between CuO₂ layers is rather weak. A direct reflection of the weak coupling is highly suppressed irreversibility line, i.e. a broad reversible region in H-T plane. The decoupling field obtained from the irreversibility line is less than 0.1 T, which is comparable with that of quasi two-dimensional superconductor Bi₂Sr₂CaCu₂O_8+δ. Comparison of data with the Hao-Clem model gives characteristic parameters [ξ_ab(0) and λ_ab(0)] and the critical fields [H_c(0) and H_c2^c(0)]. A large value of penetration depth, λ_ab(0)=240 nm reflects a small carrier concentration in CuO₂ planes, and explains the reason of the weak interlayer coupling.     

The effects of C substitution and disorder on the field dependent critical current density in MgB2 with nano-SiC additions

In this work, nano sized SiC powders were mixed with Mg and B and reacted by either a one-step insitu or two-step method resulted in different level of C substitution. X-ray diffraction shows the presence of Mg₂Si signifying that the reaction between SiC and Mg occurred leading to the release of C in samples reacted in one-step method. Moreover, the much reduced value of a-axis indicates C substitution took place. Resistivity measurements showed higher intragrain scattering owing to a higher density of defects and/or impurities. These samples also show higher H_irr and H_c2 at 20 K in comparison to samples with mainly unreacted SiC (hence lower C substitution). More importantly, their J_c’s are more insensitive to high magnetic field (>4 T) at 6 K. However, at 20 K the effect of C content on J_c(H) is less pronounced. Finally, the order of magnitude of J_c(H) at both 6 K and 20 K is rather dominated by pinning.     

Critical current density and flux pinning in an unconventional superconductor

The functional dependence of the critical current density on magnetic field, Jc(H), observed at fixed temperatures in the unconventional type-II superconductor, LaAg1−cMnc (c=0.1,0.2,0.3) alloys, but not the relative magnitude of Jc in different alloy compositions at any given temperature and field, is adequately described by the exponential-decay critical state model. In accordance with the predictions of the Kramer's flux-pinning model, the peak value of the pinning force density with the exponent 1.7?m?2.8 and scales with h=H/Hc₂, where Hc₂ is the upper critical field. Irrespective of sample composition and temperature in the superconducting state, the pinning of the flux line lattice (FLL) dominates over the plastic FLL shear.