C波段增益平坦掺铒光纤放大器的优化设计

EDFA的增益不平坦是限制DWDM系统性能的一个重要因素,目前已经提出了许多方案来改善EDFA在整个C波段内的增益谱.采用双级串联结构,并在两段光纤中间加入增益均衡滤波器来实现增益平坦.通过对前后两段铒光纤的长度优化,使得增益均衡滤波器的谱特性易于实现.优化后的EDFA输出功率达到17dBm,噪声指数小于5dB,在1530～1565nm的带宽内增益波动小于1dB.     

基于单个光纤光栅反射技术的高性能L波段EDFA

基于单个光纤光栅反射技术提出一种高性能L波段EDFA。用一个光纤布拉格光栅(FBG)反射EDFA产生的一部分C波段放大自发辐射(ASE)噪声,该部分ASE噪声被重新注入到掺铒光纤中以提高增益效率。用静态均衡器平坦输出的增益谱,在L波段范围内,增益被箝制在25.5dB,增益不平坦度小于0.5dB,噪声指数小于5.5dB,为DWDM系统提供了一项有效的解决方案。     

宽带碲基掺铒光纤放大器掺杂特性的理论研究

对WDM系统中宽带碲基掺铒光纤放大器(EDTFA)多信道增益谱特性的研究表明,在给定泵浦方式、泵浦功率和光纤长度的工作条件下,碲基掺铒光纤中铒掺杂浓度对EDTFA各信道信号增益的影响并不相同,相比于长波长信道,短波长信道的信号增益随着光纤中铒掺杂浓度的提高更易趋于饱和及快速衰减状态,同时信号增益谱向长波长方向萎缩.     

高掺铒光纤光谱及增益特性研究

对高掺铒浓度光纤的增益及光谱特性进行了实验研究.仅用增益长度2.75米的高掺铒光纤,对于1530nm～1560nm波段0dBm的输入信号,其放大后的输出功率可达+14dBm,且其噪声指数低于4.5dB.所用980nm泵浦源的泵浦功率为80mW.得出掺铒光纤的平坦增益谱宽为30nm(±1dB),其输出功率与输入信号功率呈线性关系.实验测得其1550nm光信号增益为43dB.     

两段级联宽带碲基掺铒光纤放大器特性研究

利用四能级结构速率方程组和光功率传输方程组,研究了在碲基掺铒光纤(EDTF)中内插一个光隔离器、形成两段级联的碲基掺铒光纤放大器(EDTFA)后对EDTFA性能的改善.结果表明,在给定泵浦方式、泵浦功率、纤芯掺杂浓度和输入信号功率条件下,两段级联EDTFA可以有效的抑制光纤中反向传输放大自发辐射(ASE)噪声,降低反转粒子数的消耗,从而提高信号增益、输出功率,并且降低了噪声系数.对不同光纤长度和光隔离器内插在光纤中不同位置的研究表明,当光纤为最佳长度和光隔离器在最佳位置处时,可使短波长信号增益增加10 dB,噪声系数减小1 dB,并进一步增加了放大带宽以及功率转换效率.     

用于S波段光纤拉曼放大器增益平坦的长周期光纤光栅设计

根据实际所测得的S波段光纤拉曼放大器的信号增益谱,通过对长周期光纤光栅具体参数的选定,由两个长周期光纤光栅级联滤波的组合,可以使增益图谱在50 nm(1485-1535 nm)带宽内,增益平坦度达到±0.6dB以内.由三个长周期光纤光栅级联滤波组合,可以使增益图谱在49 nm(1490-1539 nm)带宽内,增益平坦度达到0.5 dB, 55 nm(1485-1540 nm)带宽内,增益平坦度达到1 dB.这对扩大长周期光纤光栅增益平坦滤波器的运用范围,扩大单泵浦S波段光纤拉曼放大器的有效增益带宽有着积极的意义.     

运用长周期光纤光栅实现EDFA的增益平坦化

针对Perilli公司生产的OP 980型掺铒光纤放大器 (EDFA)的增益谱不平坦特性 ,运用紫外写入的方法研制成使其增益平坦化的长周期光纤光栅增益平坦化器件 ,实现了该掺铒光纤放大器在 30nm范围内的增益谱波动小于± 0 4dB。     

级连L波段EDFA优化的数值模拟与实验

对级连结构的L波段EDFA进行了优化设计.首先用加拿大Optiwave的OptiAmplifier4.0数值模拟了在其他条件确定情况下两级光纤长度比例变化对放大器性能的影响,在优化光纤长度比例的基础上,为了得到更宽的L-EDFA的本征平坦增益谱,进一步优化了前后级泵浦功率.在上述条件下利用42 m的铒纤得到实验结果为:ASE谱3 dB带宽1566.84～1606.80 nm(40 nm).在L波段(1570～1605 nm),小信号平均增益约为25 dB,增益不平坦度为±1 dB,噪声指数约为5 dB.     

用于S波段光纤拉曼放大器增益平坦的长周期光纤光栅设计

根据实际所测得的S波段光纤拉曼放大器的信号增益谱,通过对长周期光纤光栅具体参数的选定,由两个长周期光纤光栅级联滤波的组合,可以使增益图谱在50nm(1485～1535nm)带宽内,增益平坦度达到士0．6dB以内．由三个长周期光纤光栅级联滤波组合,可以使增益图谱在49nm(1490～1539nm)带宽内,增益平坦度达到0．5dB,55nm(1485～1540nm)带宽内,增益平坦度达到1dB．这对扩大长周期光纤光栅增益平坦滤波器的运用范围,扩大单泵浦S波段光纤拉曼放大器的有效增益带宽有着积极的意义．     

利用单模光纤实现增益平坦掺铒光纤放大器

从理论上分析了利用光纤环形镜(FLM)中的偏振耦合效应作为滤波器,对掺铒光纤放大器(EDFA)实现增益平坦化的方法。利用3km普通单模光纤(SMF)得到EDFA自发发射谱(ASE),在34nm带宽内的不平坦度为±0.6dB。     

1.58-/spl mu/m broad-band erbium-doped tellurite fiber amplifier

This paper describes the development of a 1.58-/spl mu/m broad-band and gain-flattened erbium-doped tellurite fiber amplifier (EDTFA). First, we compare the spectroscopic properties of various glasses including the stimulated emission cross sections of the Er/sup 3+4/ I/sub 13/2/ /sup 4/I/sub 15/2/ transition and the signal excited-state absorption (ESA) cross sections of the Er/sup 3+4/ I/sub 13/2/ - /sup 4/I/sub 9/2/ transition. We detail the amplification characteristics of a 1.58-/spl mu/m-band EDTFA designed for wavelength-division-multiplexing applications by comparing it with a 1.58-/spl mu/m-band erbium-doped silica fiber amplifier. Furthermore, we describe the 1.58-/spl mu/m-band gain-flattened EDTFA we developed using a fiber-Bragg-grating-type gain equalizer. We achieved a gain of 25.3 dB and a noise figure of less than 6 dB with a slight gain excursion of 0.6 dB over a wide wavelength range of 1561-1611 nm. The total output power of the EDTFA module was 20.4 dBm and its power conversion efficiency reached 32.8%.     

Gain flattened Er3+-doped tellurite fibre amplifier forWDM signals in the 1581-1616 nm wavelength region

A gain-flattened Er³⁺-doped tellurite fibre amplifier (EDTFA) with an expanded L-band is presented. The amplifier has an average gain of 28 dB and a noise figure of <6 dB with a slight gain excursion of 1 dB over a wide wavelength range of 1581-1616 nm. The total output power of the EDTFA module was 20.5 dBm and its power conversion efficiency reached 25%     

A low-noise and gain-flattened amplifier composed of a silica-based and a fluoride-based Er/sup 3+/-doped fiber amplifier in a cascade configuration

We propose a novel low noise and gain-flattened Er/sup 3+/-doped fiber amplifier (EDFA) with a cascade configuration for wavelength division multiplexing (WDM) signals. In this configuration, a 1480-nm pumped fluoride-based EDFA is joined to a 980-nm pumped silica-based EDFA through an optical isolator. By adjusting the silica-based Er/sup 3+/-doped fiber length in the silica-based EDFA, we realized an excellent flat gain EDFA with a gain excursion of less than 0.9 dB and noise figure of 5.7/spl plusmn/0.2 dB, and a low noise EDFA with a noise figure of 5/spl plusmn/0.2 dB and a gain excursion of less than 1.4 dB, for 8 channel WDM signal in the 1532-1560-nm wavelength region.     

980 nm band pumped Er/sup 3+/-doped tellurite-based fibre amplifier with low-noise figure of less than 4.5 dB

The amplification characteristics of an Er/sup 3+/-doped tellurite-based fibre amplifier (EDTFA) with 980 nm band pumping are described. The optimum pump wavelength and length of the newly developed EDTF are investigated in order to obtain both a low noise figure and a high gain simultaneously. We realise a low noise figure of less than 4.5 dB with a pump wavelength of 976.5 nm and a 0.4 m EDTF.     

Fluoride-based erbium-doped fiber amplifier with inherently flat gain spectrum

We successfully developed a fluoride-based Er/sup 3+/-doped fiber amplifier (F-EDFA). An average signal gain of 26 dB was achieved for 8 channel wavelength division multiplexed (WDM) signals in the 1532-1560 nm wavelength region with a gain excursion of less than 1.5 dB at an input signal power of -20 dBm per channel. Furthermore, we studied the amplification characteristics of the F-EDFA for WDM signals. The following experimental results were obtained. (1) For an 8-channel WDM signal in the 1532 to 1560 nm wavelength region, the gain excursion between channels can be suppressed to within 1.5 dB. However, the wavelength region allowing a gain excursion of 1.5 dB, is between 1536-1560 nm for the silica-based Er/sup 3+/-doped fiber amplifier. (2) F-EDFAs have a flat gain region between 1534-1542 nm. The gain excursion of this region is less than 0.2 dB for WDM signals.     

Gain-flattened Er/sup 3+/-doped fiber amplifier for a WDM signal in the 1.57-1.60-/spl mu/m wavelength region

A gain-flattened Er/sup 3+/-doped silica-based fiber amplifier (EDFA) has been constructed for a 1.58-/spl mu/m band WDM signal. This EDFA exhibits uniform amplification characteristics with a gain excursion of 0.9 dB for a four-channel WDM signal in the 1.57-1.60 /spl mu/m wavelength region. The average signal gain and the noise figure for the WDM signal are 29.5 dB and less than 6.3 dB, respectively. The use of this EDFA in parallel with a 1.55-/spl mu/m band EDFA will expand the WDM transmission wavelength region.     

60-GHz pseudomorphic-MODFET low-noise MMIC amplifiers

The development of V-band low-noise monolithic microwave integrated circuits (MMICs) based on pseudomorphic modulation-doped FETs (P-MODFETs) is presented. These dual-stage MMICs incorporate P-MODFETs, with 0.35-μm×60-μm gates, as the active elements, electron-beam-written tuning elements, and DC-blocking and bias networks. The dual-stage chips exhibited a maximum gain of 10.2 dB at 59.5 GHz and a minimum noise figure of 5.3 dB, with an associated gain of 8.2 dB at 58.2 GHz. A cascaded four-stage amplifier using two MMIC modules exhibited 5.8-dB minimum noise figure with an associated gain of 18.3 dB at 58 GHz and up to 21.1 dB of maximum gain     

Performance of a high concentration Er/sup 3+/-doped alumino silicate fiber amplifier

We report the gain, noise figure, output saturation power, and conversion efficiency of a highly concentrated Er/sup 3+/-doped alumino silicate fiber amplifier. We obtain a gain per unit length of 1.0 dB/cm, which corresponds to the highest gain per unit length obtained in an Er/sup 3+/-doped fiber amplifier. The pump power threshold ranges from 2 to 5 mW, depending on the fiber length.     

Gain enhanced L-band Er3+-doped fiber amplifierutilizing unwanted backward ASE

A novel method of enhancing gain in the long wavelength band erbium-doped fiber amplifier is described using the unwanted amplified spontaneous emission (ASE) self-pumping technique. A dual-stage amplifier is deployed, where the unwanted backward ASE from the first stage is fully utilized to pump the second stage amplifier. Gain improvement is observed that enables support for higher channel capacities in wavelength-division-multiplexed systems with negligible noise figure penalties. Flat-gain values in excess of 24 dB and noise figures <5 dB are obtained from the proposed amplifier with a higher channel counts compared to the conventional amplifier