Piezoelectric cantilever microphone and microspeaker

A micromachined piezoelectric cantilever transducer, which works both as a microphone and as a microspeaker, has been fabricated and tested. The 2000×2000×4.5 μm³ cantilever has a zinc oxide (ZnO) piezoelectric thin film on a supporting layer of low-pressure chemical-vapor-deposited (LPCVD) low-stress silicon nitride. A highlight of the fabrication process, which may also be relevant for other micromachined structures, is the technique for producing a flat, multilayer cantilever. The measured microphone sensitivity is fairly constant at 3 mV/μbar in the low frequency range and rises to 20 mV/μbar at the lowest resonant frequency of 890 Hz. The 3 mV/μbar sensitivity is the highest reported to date for a microphone with a micromachined diaphragm. When measured into a 2 cm³ coupler with 4 V(zero-peak) drive, the microspeaker output sound pressure level (SPL) is 75 dB at 890 Hz. It increases to approximately 100 dB SPL at 4.8 kHz with 6 V(zero-peak) drive. The measured microphone frequency response agrees well with the results of an ABAQUS simulation     

Fabrication of silicon condenser microphones using single wafertechnology

A condenser microphone design that can be fabricated using the sacrificial layer technique is proposed and tested. The microphone backplate is a 1-μm plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride film with a high density of acoustic holes (120-525 holes/mm²), covered with a thin Ti/Au electrode. Microphones with a flat frequency response between 100 Hz and 14 kHz and a sensitivity of typically 1-2 mV/Pa have been fabricated in a reproducible way. These sensitivities can be achieved using a relatively low bias voltage of 6-16 V. The measured sensitivities and bandwidths are comparable to those of other silicon microphones with highly perforated backplates. The major advantage of the new microphone design is that it can be fabricated on a single wafer so that no bonding techniques are required     

Silicon condenser microphones with corrugated silicon oxide/nitride electret membranes

Corrugated electret membranes are used in a micromachined silicon microphone. The membranes consist of a permanently corona-charged double layer of silicon dioxide and silicon nitride, known to have excellent charge-storing properties. This electret can replace the external bias needed for condenser microphones. The well-known LOCOS technique—also combined with dry etching—is used for the first time to fabricate membranes with corrugation depths of several microns. The membrane thickness amounts to 600 nm.

The interferometrically measured center deflection is up to 40 nm/Pa for diaphragms with four corrugations of up to 3.3 μm depth and a size of A_M=1 mm². This high mechanical sensitivity limits the dynamic range to sound pressures below 50 Pa. The obtained mechanical sensitivities are in excellent agreement with the theory.

The most compliant corrugated diaphragms result in a microphone sensitivity of 2.9 mV/Pa, an equivalent noise level of 39 dB(A) and a total harmonic distortion below 1.7% at 28 Pa (123 dB SPL). The corrugation depth in the sensors has been only 1.3 μm. All sensors cover the whole audio and low ultrasonic range. The temperature coefficient is between 0.05 and 0.1 dB/K.     

High-performance condenser microphone with fully integrated CMOSamplifier and DC-DC voltage converter

The development of a capacitive microphone with an integrated detection circuit is described. The condenser microphone is made by micromachining of polyimide on silicon. Therefore, the structure can be realized by postprocessing on substrates containing integrated circuits (IC's), independently of the IC process, integrated microphones with excellent performances have been realized on a CMOS substrate containing dc-dc voltage converters and preamplifiers. The measured sensitivity of the integrated condenser microphone was 10 mV/Pa, and the equivalent noise level (ENL) was 27 dB(A) re. 20 μPa for a power supply voltage of 1.9 V, which was measured with no bias voltage applied to the microphone. Furthermore, a back chamber of infinite volume was used in all reported measurements and simulations     

Capacitive microphone with a surface micromachined backplate usingelectroplating technology

A technology for surface micromachining of free-standing metal microstructures using metal electrodeposition on a sacrificial photoresist layer has been applied to a condenser microphone. Electroplating technology has been used to implement a suspended and perforated 15-μm-thick microstructure in copper, which serves as backplate electrode in the condenser microphone. The 1.8×1.8 mm ² large microphone diaphragm is in monocrystalline silicon and is fabricated with anisotropic etching of the substrate wafer. The realized prototypes have a measured sensitivity of 1.4 mV/Pa using a bias voltage of 28 V. The bandwidth is limited by an anti-resonance at 14 kHz which is due to the semi-rigid backplate. The resonance behavior of the backplate structure has been analyzed with finite element modeling with results in good agreement with measured data     

A new measurement microphone based on MEMS technology

This paper presents a new type of measurement microphone that is based on MEMS technology. The silicon chip design and fabrication are discussed, as well as the specially developed packaging technology. The microphones are tested on a number of key parameters for measurement microphones: sensitivity, noise level, frequency response, and immunity to disturbing environmental parameters, such as temperature changes, humidity, static pressure variations, and vibration. A sensitivity of 22 mV/Pa (-33 dB re. 1 V/Pa), and a noise level of 23 dB(A) were measured. The noise level is 7 dB lower than state-of-the-art 1/4-inch measurement microphones. A good uniformity on sensitivity and frequency response has been measured. The sensitivity to temperature changes, humidity, static pressure variations and vibrations is fully comparable to the traditional measurement microphones. This paper shows that high-quality measurement microphones can be made using MEMS technology, with a superior noise performance.     

Fabrication of improved piezoresistive silicon cantilever probes for the atomic force microscope

This paper describes an improved design for a monolithic silicon atomic force microscope (AFM) probe using piezoresistive sensing. The probe is V shaped, with a sharp tip at the free end and two piezoresistors at the root, and is fabricated using silicon-on-insulator (SOI) starting material. The maximum sensitivity of the AFM probe is measured to be 4.0(± 0.1) × 10⁻⁷ Å⁻¹, which is larger than that of the previous parallel-arm piezoresistive AFM probe. The measured results are in reasonable agreement with the values predicted by theory. The minimum detectable force and minimum detectable deflection of the AFM probes are predicted to be 1.0 × 10⁻¹⁰ N and 0.29 Å_r.m.s., respectively, using a Wheatstone bridge arrangement biased at a voltage of ± 5 V and bandwidth of 10 Hz–1 kHz.     

Piezoelectric microphone with on-chip CMOS circuits

An IC-processed piezoelectric microphone with on-chip, large-scale integrated (LSI) CMOS circuits has been designed, fabricated, and tested in a joint, interactive process between a commercial CMOS foundry and a university micromachining facility. The 2500×2500×3.5 μm ³ microphone has a piezoelectric ZnO layer on a supporting low-pressure chemical-vapor-deposited (LPCVD), silicon-rich, silicon nitride layer. The optimum residual-stress-compensation scheme for maximizing microphone sensitivity produces a slightly buckled microphone diaphragm. A model for the sensitivity dependence of device operation to residual stress is confirmed by applying external strain. The packaged microphone has a resonant frequency of 18 kHz, a quality factor Q≈40, and an unamplified sensitivity of 0.92 mV/Pa. Differential amplifiers provide 49 dB gain with 13 μV A-weighted noise at the input     

Composites: A novel alternative to construct solid state Ag/AgCl reference electrodes

An Ag/AgCl solid-state reference electrode is developed by means of a graphite–AgCl–Silver dag-epoxy resin composite. The response of the composite reference electrode (CRE) to chloride ions is evaluated; a linear non-nernstian response is observed associated to the following equation E = −15.15 (±1.10) − 44.05 (±0.38) log[Cl⁻]. Comparing the CRE's response potential versus a saturated commercial Ag/AgCl reference in KCl 0.1 M, a mean of 40.7 ± 0.4 mV of the distribution of potential versus time data is observed over a period of 1 h. The performance of the CRE as reference for a glass membrane electrode by means of direct pH measurements and quantitative determination of acids by acid–base titrations is evaluated obtaining statistically stable, precise and exact results compared with those obtained using a combined glass electrode. The typical cylindrical configuration of the CRE is changed to adapt it to a FIA system for the determination of ammonium ion, obtaining a sensitivity 50.30 ± 0.26 mV/log[NH₄⁺] and a linear range 8.5 × 10⁻⁵ to 0.1 M, which are analytical parameters statistically equivalent to those presented by the classical determination system.     

Modelling of silicon condenser microphones

Several models concerning the sensitivity of capacitive pressure sensors have been presented in the past. Modelling of condenser microphones, which can be considered to be a special type of capacitive pressure sensor, usually requires a more complicated analysis of the sensitivity, because they have a strong electric field in the air gap. It is found that the mechanical sensitivity of condenser microphones with a circular diaphragm, either with a large initial tension or without any initial tension, increases with increasing bias voltage (and the corresponding static deflection), whereas the mechanical sensitivity of other capacitive pressure sensors does not depend on the static deflection. It is also found that the mechanical sensitivity increases with increasing input capacitance of a preamplifier. In addition, the open-circuit electrical sensitivity and, consequently, the total sensitivity too, also increases with increasing bias voltage (or static deflection). However, the maximum allowable sound pressure at which the diaphragm collapses, an effect that has to be taken into account, decreases with increasing static deflection in most cases, ulthnately resulting in an optimum value for the bias voltage. The model for microphones with a circular highly tensioned diaphragm has been verified successfully for two microphone types.     

Perchlorate-selective membrane sensors based on two nickel-hexaazamacrocycle complexes

The perchlorate salts of nickel(II) complexes of 1,3,5,8,10,13-hexaazacyclotetradecane (1) and 1,8-tert-butyl-1,3,5,8,10,13-hexaazacyclotetradecane (2) were used in construction of PVC based membrane electrodes. These sensors show very good selectivity for ClO₄⁻ ions over a wide variety of anions. These electrodes exhibit Nernstian behavior with the slopes of 59.5 and 59.3 mV per decade for (1) and (2), respectively. The working concentration ranges of the sensors are 1.0 × 10⁻¹–9.0 × 10⁻⁷ M (1) and 1.0 × 10⁻¹–5.0 × 10⁻⁷ M (2) with the detection limits of 6.0 × 10⁻⁷ and 2.0 × 10⁻⁷ M, respectively. The response time of the both sensors is very fast, and can be used for 2 (I) and 12 (II) weeks in a pH range of 3.0–11.0. These electrodes were applied to the determination of perchlorate ions in wastewater and cattle urine samples.     

Development of a highly sensitive and selective optical chemical sensor for batch and flow-through determination of mercury ion

A very sensitive, highly selective and reversible optical chemical sensor (optode) for mercury ion is described. The sensor is based on the interaction of Hg²⁺ with 2-mercapto-2-thiazoline (MTZ) in plasticized PVC membrane incorporating a proton-selective chromoionophore (ETH5294) and lipophilic anionic sites (sodium tetraphenylborate, NaTPB). The membranes were cast onto glass substrates and used for the determination of mercury ion in aqueous solutions by batch and flow-through methods. The sensor could be used in the range 2.0 × 10⁻¹⁰ to 1.5 × 10⁻⁵ M (0.04 ng mL⁻¹ to 3 μg mL⁻¹) Hg²⁺ with a detection limit of 5.0 × 10⁻¹¹ M and a response time of <40 s. It can be easily and completely regenerated by dilute nitric acid solution. The sensor has been incorporated into a home-made flow-through cell for determination of mercury ion in flowing streams with improved sensitivity, precision and detection limit. The sensor showed excellent selectivity for Hg²⁺ with respect to several common alkali, alkaline earth and transition metal ions. The results obtained for the determination of mercury ion in river water samples using the proposed optode was found to be comparable with the well-established cold-vapor atomic absorption method.     

Determination of reduced glutathione using an amperometric carbon paste electrode chemically modified with TTF–TCNQ

The development of an amperometric sensor for the determination of reduced glutathione (GSH) is described. The sensor is based on tetrathiafulvalene–tetracyanoquinodimethane (TTF–TCNQ) incorporated into the graphite powder/Nujol oil matrix. The electrooxidation of GSH was monitored amperometrically at 200 mV versus SCE (saturated calomel electrode). The amperometric response of the sensor was linearly proportional to the GSH concentration between 20 and 300 μmol l⁻¹, in 0.1 mol l⁻¹ phosphate buffer (pH 8.0), containing 0.1 mol l⁻¹ KCl and 0.5 mmol l⁻¹ Na₂H₂EDTA, as supporting electrolyte.

The detection limit, considering signal/noise ratio equal three, was 4.2 μmol l⁻¹ for GSH and the repeatability obtained as relative standard deviation was of 5.1% for a series of 10 successive measurements.     

Pyroelectric thin-film sensor array

Pyroelectric thin-film point detectors and 1 × 12 arrays have been fabricated and characterized. They consist of sol-gel-deposited PZT thin-film elements on micromachined Si₃N₄/SiO₂ membranes. The measured current and voltage response as a function of modulation frequency of a 1 × 12 array element is compared with finite-element calculations. Voltage responsivities of almost 3000 V W⁻¹ in vacuum and 800 V W⁻¹ in air have been achieved for 0.4 mm × 0.9 mm elements. Some point detectors have been completely packaged and correct operation in a movement detection system has been demonstrated.     

High sensitivity and small size MEMS capacitive microphone using a novel slotted diaphragm

A novel single-chip microelectromechanical systems (MEMS) capacitive microphone with a slotted diaphragm for sound sensing is developed to minimize the microphone size and improve the sensitivity by decreasing the mechanical stiffness of the diaphragm. The behaviors of the microphones with clamped and slotted diaphragms are analyzed using the finite element method (FEM). According to the results, a clamped microphone with a 2.43 × 2.43 mm² diaphragm and a slotted one with a 1.5 × 1.5 mm² diaphragm have the same mechanical sensitivity, but the size of slotted microphone is at least 1.62 times smaller than clamped structure. The results also yield a sensitivity of 5.33 × 10⁻⁶ pF/Pa for the clamped and 3.87 × 10⁻⁵ pF/Pa for the slotted microphone with a 0.5 × 0.5 mm² diaphragm. The sensitivity of the slotted diaphragm is increased 7.27 times. The pull-in voltage of the clamped microphone is 105 V, and slotted one is 49 V. The pull-in voltage of the slotted microphone is about 53% decreased.     

High-temperature ceramic pressure sensor

A pressure microsensor for working at high temperature has been developed. The device consists of a tantalum nitride thin film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized silicon wafers with an aluminium interconnection layer and a silicon dioxide passivation. The microsensors present a low temperature coefficient of resistance and good long-term stability. The sensitivity is 0.15 mV (V bar)⁻¹ with low sensitivity drift and low combined non-linearity and hysteresis in the pressure range 0–10 bar.     

A new hybrid fabrication process for a high sensitivity MEMS microphone

A novel multi-layer stacking capacitive type microphone is designed in this study based on theoretical analysis and numerical simulations, while fabricated via two standard stable silicon-based MEMS processes—PolyMUMPs and SOIMUMPs. The adoption of two standardized processes helps greatly to increase yield rate. The sensitivity of the microphone is first determined by an analytical model based on an equivalent circuit, which is followed by finite element (FEM) analyses on the capacitance value, static pull-in voltage and dynamic characteristics. Based on the developed analytical model, varied dimensions of the microphone are optimized and then the performance is validated by analytical simulations. In the next step, micro-fabrication of the microphone is accomplished using two standard processes, PolyMUMPs and SOIMUMPs provided by MEMSCAP. Experiments are conducted to acquire the information of pull-in voltage for safe operation and frequency response in sensitivity for performance evaluation. In the static case, experimental results show a good agreement with the analytical results with 90 Mpa residual stress assumed. As for dynamic validation, the frequency response is measured in an anechoic room adopting the exciting frequency as the audible range from 100–10 kHz. The measured sensitivity is as around 0.78 and 1.7 mV/Pa from 100 to 10 kHz, under the biases of 2 and 4.5 V, respectively. Within the audible frequency range, the proposed device maintains the loss as less as 2.7 dB (ref. to V/Pa), under 3 dB—the commonly acceptable drop within audible frequency range.     

工业化硅微机械电容式麦克风的设计与性能计算

给出了一种单芯片硅微机械电容式麦克风的结构设计,并针对此结构对其进行了动态特性分析计算。硅微机械电容式麦克风的两个电极由一个复合敏感膜和一个金属铜底板构成。复合敏感膜包括三层,中间一层是掺杂硼的多晶硅,上下两层是氮化硅,三层复合膜的厚度设计和制作工艺使复合膜处于轻微的拉应力状态。底板采用低温电镀铜技术制作,底板上分布有许多圆形通气孔来调节敏感膜与底板间的空气压膜阻尼。在复合敏感膜和金属铜底板之间采用牺牲层技术制作了一空气间隙,使复合敏感膜和一个金属铜底板之间构成一工作电容。在硅基体的背面采用湿法腐蚀出声音进口腔。针对这一结构我们对其动态特性进行了分析计算,计算出麦克风在9V偏置电压下开环灵敏度为4.99mV/Pa,麦克风最大偏置电压为32.83V,麦克风工作时的频率带宽为0~134kHz。分析结果表明该硅微机械电容式麦克风能满足工业界的使用要求。     

A silicon condenser microphone with structured back plate and silicon nitride membrane

The fabrication process of a silicon condenser microphone and experimental results of the acoustic measurements are described. The microphone consists of two chips. One chip carries the 150 nm thick silicon nitride membrane, which has an area of 0.8 mm × 0.8 mm. The second chip contains the back electrode, the spacer and the contact pads of the microphone. In order to reduce the streaming resistances in the air gap, the back-electrode area is either structured with grooves by a plasma etching technique or with holes by an anisotropic etching technique. A frequency-independent sensitivity of 10 mV/Pa (open circuit, 1.8 mV/Pa measured) up to 30 kHz is obtained as a result of this structuring of the back-electrode area. Since the air-gap height is only 2 μm, the capacitance of the transducers ranges from 1 to 1.3 pF. The total size of the silicon microphone is 1.6 mm × 2 mm × 0.56 mm.     

Slotted capacitive microphone with sputtered aluminum diaphragm and photoresist sacrificial layer

In this paper, we have fabricated a new microphone using aluminum (Al) slotted perforated diaphragm and back plate electrode, and photoresist (AZ1500) sacrificial layer on silicon wafer. The novelty of this method relies on aluminum diaphragm includes some slots to reduce the effect of residual stress and stiffness of diaphragm for increasing the microphone sensitivity. The acoustic holes are made on diaphragm to reduce the air damping, and avoid the disadvantages of non standard silicon processing for making back chamber and holes in back plate, which are more complex and expensive. Photoresist sacrificial layer is easy to deposition by spin coater and also easy to release by acetone. Moreover, acetone has a high selectivity to resist compared to silicon oxide and Al, thus it completely removes sacrificial resist without incurring significant damage silicon oxide and Al. The measured zero bias capacitance is 17.5 pF, and its pull-in voltage is 25 V. The microphone has been tested with external amplifier and speaker, the external amplifier was able to detect the sound waves from microphone on speaker and oscilloscope. The maximum amplitude of output speech signal of amplifier is 45 mV, and the maximum output of MEMS microphone is 1.125 μV.