Oxygen partial pressure dependence of the structural properties of CdO thin films deposited by a modified reactive vacuum evaporation process

Thin films of cadmium oxide were thermally deposited on glass substrates at partial pressures of oxygen, pO₂ in the range 1.33×10⁻² to 0.133 Pa at a substrate temperature of 160 °C. Energy dispersive analysis of X-ray fluorescence (EDAX) revealed that the CdO films deposited at pO₂ value of 4.00×10⁻² Pa were nearly stoichiometric. X-ray diffractometry (XRD) confirmed the polycrystalline nature of the film structure. All the films showed an fcc structure of the NaCl-type, as the dominant phase. The films exhibited preferred orientation along the (1 1 1) diffraction plane. The texture coefficients calculated for the various planes at different oxygen partial pressures (pO₂) indicated that the maximum preferred orientation of the films occurred along the (1 1 1) plane at an oxygen partial pressure of 4.00×10⁻² Pa. This was interpreted in terms of oxygen chemisorption and desorption processes. The lattice parameters determined from the diffraction peaks were in the range 4.655–4.686 Å. The average lattice parameter a₀ found by extrapolation using the Nelson–Riley function was 4.696 Å. Both the lattice parameter and the crystallite size were found to increase with increased partial pressure of oxygen. On the other hand, the strain and dislocation density were found to decrease as the partial pressure of oxygen was raised. A maximum (80%) in the optical transmittance at λ=600 nm and minimum in the electrical resistivity (9.1×10⁻⁴ Ω cm) of the films occurred at an optimum partial pressure of oxygen of 4.00×10⁻² Pa. The results are discussed.     

Solvothermal synthesis and characterization of Sb-doped SnO2 nanoparticles used as transparent conductive films

Sb-doped SnO₂ (ATO) nanoparticles was synthesized at different temperatures by the solvothermal route, starting with SnCl₄·5H₂O and SbCl₃. The samples were characterized by means of XRD, Mössbauer spectroscopy and TEM, the specific surface area and resistivity of samples were examined, respectively. Results showed that the mean crystallite size and resistivity of the samples increased and decreased, respectively, with the increase of the solvothermal temperature. The lowest resistivity of the samples was found at 160 °C, and Mössbauer spectroscopy showed that the content of Sb⁵⁺ in these samples was the highest. TEM showed that the powder was monodispersed in the range of 8–15 nm particles size. Sb-doped SnO₂ thin films were prepared by spin coating process on corning 7059 glass using the ethanol suspensions of Sb-doped SnO₂ nanoparticles and the Hall mobility μ, the carrier concentration n, the sheet resistance R_□ and the transmission spectra of the films were measured and investigated.     

(Cu,Fe, Co,or Ni)-doped tin dioxide films deposited by spray pyrolysis: Doping influence on thermal stability of the film structure

The results of doping influence on thermal stability of the SnO₂ film morphology are presented in this article. The SnO₂ films doped by Fe, Cu, Ni, Co (16 at.%) were deposited by spray pyrolysis from 0.2 M SnCl₄–water solution at T_pyr 350–450 °C. The annealing at 850–1030 °C was carried out in the atmosphere of the air. The change of such parameters as film morphology, the grain size, texture and the intensity of X-ray diffraction (XRD) peaks have been controlled. For structural analysis of tested films we have been using X-ray diffraction, Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) techniques. It was established that the doping does not improve thermal stability of both film morphology and the grain size. It was made a conclusion that the increased contents of the fine dispersion phase of tin oxide in the doped metal oxide films, and the coalescence of this phase during thermal treatment are the main factors, responsible for observed changes in the morphology of the doped SnO₂ films.     

Inherent superhydrophobicity of Sn/SnOx films prepared by surface self-passivation of electrodeposited porous dendritic Sn

Superhydrophobic Sn/SnO_x (x = 1 and 2) films were facilely fabricated by surface self-passivation of three-dimensional (3D) hierarchical porous dendritic Sn while exposed to the air. The porous dendritic Sn was obtained rapidly by electrodeposition accompanying release of hydrogen bubbles. Influence of electrodeposition parameters on the surface morphology and wettabillity has been investigated in detail, including deposition potentials, deposition times and electrolyte concentrations. The maximum contact angle reached to 165° on the porous dendritic Sn/SnO_x film electrodeposited in a solution of 60 mM SnCl₂ and 1.5 M H₂SO₄ under −1.7 V for 20 s. Both the hierarchical micro-nanostructures and the spontaneously formed ultrathin surface passivation layer of Sn oxides endow the prepared Sn/SnO_x surface with excellent inherent superhydrophobicity without further surface modification.     

Spectroscopic properties of HoAl3(BO3)4 single crystal

The Judd–Ofelt theory has been applied to analyze absorption spectra of Ho³⁺ ion in HoAl₃(BO₃)₄ measured in spectral range 300–700 nm at room temperature. The Judd–Ofelt spectroscopic parameters have been determined as: Ω₂ = 18.87 × 10⁻²⁰ cm², Ω₄ = 17.04 × 10⁻²⁰ cm², Ω₆ = 9.21 × 10⁻²⁰ cm². These parameters have been used to calculate radiative lifetimes and branching ratios of the luminescence manifolds. Three luminescent bands were found in the spectral range 450–700 nm ascribed to transitions from the ⁵F₅, (⁵F₄, ⁵S₂) and ³K₈ states to the ground state ⁵I₈. Experimental intensities of these luminescence transitions were compared with those calculated by using Judd–Ofelt theory and the system of kinetic equations for populations of starting luminescing states. Probabilities of radiativeless transitions were evaluated from this comparison.     

Spectroscopic ellipsometry study of thin film thermo-optical properties

Spectroscopic ellipsometry (SE) was employed to realize in-situ monitoring and the determination of thermo-optic coefficients (TOC) of thin films by integrating a temperature controlled hot stage to the ellipsometer and applying the empirical relationship of Cauchy between the refractive index and wavelength in the data analysis. Magnetron sputtered titanium oxide thin films of 350 nm thick both as-deposited and post-deposition annealed were prepared on silicon wafers for this investigation. Results of ellipsometric analysis show that as-deposited TiO₂ films have a negative TOC of ? 1.21 × 10^? 4 K^? 1 at 630 nm over the test temperature range 304–378 K. The post-deposition annealing at 923 K for 2 hours leads an increase in film refractive index to 2.29 from 2.17 for as-deposited TiO₂ films, and an enhancement in TOC up to ? 2.14 × 10^? 4 K^? 1. X-ray diffraction (XRD) and scanning electron microscopy (SEM) cross-sectional analysis were performed for film structure characterization.     

Structural and spectroscopic characteristics of Eu3+-doped tungsten phosphate glasses

Tungsten based phosphate glasses are interesting non-crystalline materials, commonly known for photochromic and electrochromic effects, but also promising hosts for luminescent trivalent rare earth ions. Despite very few reports in the literature, association of the host́s functionalities with the efficient emissions of the dopant ions in the visible and near-infrared spectra could lead to novel applications. This work reports the preparation and characterization of glasses with the new composition 4(Sb₂O₃)96−x(50WO₃ 50NaPO₃)xEu₂O₃ where x = 0, 0.1, 0.25, 0.5 and 1.0 mol%, obtained by the melt quenching technique. The glasses present large density (∼4.6 g cm⁻³), high glass transition temperature (∼480 °C) and high thermal stability against crystallization. Upon excitation at 464 nm, the characteristic emissions of Eu³⁺ ions in the red spectral region are observed with high intensity. The Judd–Ofelt intensity parameters Ω₂ = 6.86 × 10⁻²⁰, Ω₄ = 3.22 × 10⁻²⁰ and Ω₆ = 8.2 × 10⁻²⁰ cm² were calculated from the emission spectra and found to be higher than those reported for other phosphate glass compositions. An average excited state lifetime value of 1.2 ms, was determined by fitting the luminescence decay curves with single exponential functions and it is comparable or higher than those of other oxide glasses.     

Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO₂. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10⁶ while the device mobility values were increased from 2.31 cm²/V s to 6.24 cm²/V s upon increasing the deposition temperature of the tin oxide films.     

Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection

For the first time, high quality tin oxide (SnO₂) nanowires have been synthesized at a low substrate temperature of 450 °C via vapor–liquid–solid mechanism using an electron beam evaporation technique. The grown nanowires have shown length of 2–4 μm and diameter of 20–60 nm. High resolution transmission electron microscope studies on the grown nanowires have shown the single crystalline nature of the SnO₂ nanowires. We investigated the effect of growth temperature and oxygen partial pressure on SnO₂ nanowires growth. Variation of substrate temperature at a constant oxygen partial pressure of 4 × 10⁻⁴ mbar suggested that a temperature equal to or greater than 450 °C was the best condition for phase pure SnO₂ nanowires growth. The SnO₂ nanowires grown on a SiO₂ substrate were subjected to UV photo detection. The responsivity and quantum efficiency of SnO₂ NWs photo detector (at 10V applied bias) was 12 A/W and 45, respectively, for 12 μW/cm² UV lamp (330 nm) intensity on the photo detector..     

Synthesis of SnO2 nanoparticles through the controlled precipitation route

The controlled precipitation method allowed to the synthesis of SnO₂ with advantageous specific properties, such as size and shape employing an aqueous SnCl₂·2H₂O solution as precursor. Through XRD analyses, the optimum pH value of the solution that yielded the desired product was found to be 6.25. After a thermal treatment at 600 °C, the final powder presented an average particle size below 50 nm with a surface area of 19 m² g⁻¹ and a large reactivity. The evolution of the most important functional groups during the steps involved in this synthesis route is explained in view of the results obtained with FTIR and XRD. A thorough discussion on the different intermediates involved in the whole process is presented on the basis of hydrolysis and condensation reactions. The conclusions are supported with a complete characterization through differential and gravimetric thermal analysis (DTA/TGA), electron microscopies (SEM/TEM) and surface area determinations (BET).     

Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films

Amorphous Zn–Sn–O (ZTO) thin films with relative Zn contents (= [at.% Zn]/([at.% Zn] + [at.% Sn])) of 0, 0.08 and 0.27 were fabricated by co-sputtering of SnO₂ and ZnO targets at room temperature. Changes in structural, electrical and optical properties together with electron transport properties were examined upon post-annealing treatment in the temperature range from 200 to 600 °C in vacuum and in air. Characterization by XRD showed that an amorphous ZTO thin film crystallized at higher temperatures with increasing Zn content. Crystallized ZTO films with a relative Zn content of 0.27 might not contain a single SnO₂ phase which is observed in the films of the other compositions. Amorphous ZTO films showed decreasing electrical resistivities with increasing annealing temperature, having a minimum value of 1 × 10^− 3 Ω cm. Upon crystallization, the resistivities increased drastically, which was attributed to poor crystallinity of the crystallized films. All the ZTO films were found to be degenerate semiconductors with non-parabolic conduction bands having effective masses varying from 0.15 to 0.3 in the carrier concentration range of 6 × 10¹⁸ to 2 × 10²⁰ cm^− 3. As for a ZTO film with a relative Zn content of 0.27, the degree of non-parabolicity was much lower compared with films of the other compositions, leading to a relatively stable mobility over a wide range of carrier concentration.     

Coating and spark plasma sintering of nano-sized TiN on Y-α-sialon

TiN coating on Y-α-sialon was accomplished by depositing TiO₂ on their particle surfaces through controlled hydrolysis of TiCl₄ and Ti(O-i-C₃H₇)₄ and subsequent nitridation with NH₃ gas at 1000 °C. TiN particles covering Y-α-sialon were about 20 nm in size. Spark plasma sintering (SPS) of TiN/Y-α-sialon particles produced composite ceramics with continuous TiN networks at 1400 °C, but with TiN grains isolated in elongated β-sialon grains at 1600 °C. The relative density and Vickers hardness of TiN/sialon ceramics SPSed at 1400–1600 °C containing 25 vol.% TiN were measured. The electrical resistivity was in a wide range of 10⁻⁴ to 10⁰ Ω cm for the ceramics sintered at 1400 °C, but lowered to the order of magnitude of 10⁻¹ and 10⁵ Ω cm at higher temperatures ≥1500 °C. It was found that the complete transition to β-sialon increased the resistivity to 10³ to 10⁵ Ω cm, due to breaking up continuous TiN layers by elongated β-sialon grains.     

Studies on the electrochemical preparation of MgCeCo alloy thin films on Cu substrates in urea–DMSO system

Cyclic voltammetry was used to investigate the electrochemical behaviors of Mg(II), Ce(III) and Co(II) in 3.00 mol L^− 1 urea–DMSO (dimethylsulfoxide). The electrode processes of Mg(II), Ce(III) and Co(II) reducing on Pt electrodes were irreversible steps. The transfer coefficient of Mg(II), Ce(III) and Co(II) in 3.00 mol L^− 1 urea–DMSO system was calculated as 0.07, 0.05 and 0.05 at 298.15 K, respectively. The diffusion coefficient of Mg(II), Ce(III) and Co(II) in 3.00 mol L^− 1 urea–DMSO system was calculated as 2.27 × 10^− 10, 1.77 × 10^− 10 and 3.16 × 10^− 10 m² s^− 1 at 298.15 K, respectively. The MgCeCo alloy thin films with smooth, uniform and metallic luster were obtained on Cu substrates by cyclic electrodeposition in 0.01 mol L^− 1 Mg(ClO₄)₂–0.01 mol·L^− 1 Ce(CH₃SO₃)₃₋0.01 mol L^− 1 CoCl₂–3.00 mol L^− 1 urea–DMSO system. The potential sweep rate was found to be important with respect to the adhesion of the thin films.     

Deposition and DC electrical characterisation of rf magnetron sputtered silicon nitride thin films

Silicon nitride (Si₃N₄) is an important insulator, frequently used in VLSI technology and for encapsulation. Conventionally it is prepared by low pressure and plasma-enhanced chemical vapour deposition, but may also be successfully deposited by RF sputtering. In the present work the sputtering process was characterised, together with some measurements on the high-field DC electrical properties in sandwich samples with Au electrodes. Films were Ar-sputtered using a Si₃N₄ sputtering target at gas pressures up to 2.12 Pa and RF discharge powers of 60–200 W. The deposition rate R was in the range 0.03–0.19 nm s^− 1 and was directly proportional to the discharge power and varied linearly with the pressure. Au electrodes formed sandwich structures with thicknesses of 50 nm–1 μm. Conductivity was essentially ohmic below 300 nm, while for the thicker films space-charge limited conductivity, dominated by an exponential distribution of traps, was observed. A mobility value of μ = 2.89 × 10^− 6 m² V^− 1 s^− 1 was derived from temperature measurements, and further analysis of the J–V data indicated a thermally generated electron concentration of 3.23 × 10¹⁹ m^− 3 and a trap concentration of 1.57 × 10²⁴ m^− 3. It was concluded that this method is suitable for the deposition of thin films, which have similar electrical properties to those prepared by chemical vapour deposition methods.     

Synthesis,crystal structure refinement,electrical and magnetic properties of BaV13O18 and SrV13O18

Polycrystalline samples of BaV₁₃O₁₈ and SrV₁₃O₁₈ were prepared by solid-state reaction of BaCO₃, SrCO₃, V₂O₅ and V at 1773–2073 K in flowing Ar. The crystal structures of BaV₁₃O₁₈ (R-3, a_h=12.6293(10) Å, c_h=7.0121(4) Å) and SrV₁₃O₁₈ (a_h=12.5491(7) Å, c_h=6.9878(3) Å) were refined by the Rietveld method using X-ray diffraction data. BaV₁₃O₁₈ exhibited semiconducting behavior with electrical resistivity from 5.8×10⁻³ to 2.7×10⁻³ Ω cm at 100–300 K. Electrical resistivity of SrV₁₃O₁₈ ranged from 1.5×10⁻³ to 1.8×10⁻³ Ω cm, and it increased slightly up to around 250 K and decreased above 250 K with increasing temperature. Negative Seebeck coefficients of both compounds at 100–300 K indicated that electron was the dominant carrier. BaV₁₃O₁₈ and SrV₁₃O₁₈ showed paramagnetism with the effective magnetic moment of 0.11μ_B and 0.15μ_B, respectively, at 10–100 K.     

Investigation of La3 + Doped Yb2Sn2O7 as new thermal barrier materials

Low thermal conductivity is one of the key requirements for thermal barrier coating materials. From the consideration of crystal structure and ion radius, La^3 + Doped Yb₂Sn₂O₇ ceramics with pyrochlore crystal structures were synthesized by sol–gel method as candidates of thermal barrier materials in aero-engines. As La^3 + and Yb^3 + ions have the largest radius difference in lanthanoid group, La^3 + ions were expected to produce significant disorders by replacing Yb^3 + ions in cation layers of Yb₂Sn₂O₇. Both experimental and computational phase analyses were carried out, and good agreement had been obtained. The lattice constants of solid solution (La_xYb_1 − x)₂Sn₂O₇ (x = 0.3, 0.5, 0.7) increased linearly when the content of La^3 + was increased. The thermal properties (thermal conductivity and coefficients of thermal expansion) of the synthesized materials had been compared with traditional 8 wt.% yttria stabilized zirconia (8YSZ) and La₂Zr₂O₇ (LZ). It was found that La^3 + Doped Yb₂Sn₂O₇ exhibited lower thermal conductivities than un-doped stannates. Amongst all compositions studied, (La_0.5Yb_0.5)₂Sn₂O₇ exhibited the lowest thermal conductivity (0.851 W·m^− 1·K^− 1 at room temperature), which was much lower than that of 8YSZ (1.353 W·m^− 1·K^− 1), and possessed a high coefficient of thermal expansion (CTE), 13.530 × 10^− 6 K^− 1 at 950 °C.     

The low temperature synthesis of Al doped ZnO films on glass and polymer using pulsed co-magnetron sputtering: H2 effect

It has been reported that a small amount of hydrogen in argon plasma induces an increase in the crystallite size of the as-deposited films. In addition, control of the hydrogen partial pressure is expected to improve the carrier mobility by increasing the crystallinity of the film (larger crystal size and lower grain boundary effects). Al doped ZnO (AZO) films were deposited by co-CFUBM (closed field unbalanced magnetron) sputtering. The ultimate aim was to deposit transparent films on a polymer substrate with a low electrical resistivity. Therefore, the structural, optical and electrical properties of AZO films were investigated as a function of the hydrogen partial pressure. A minimum resistivity and maximum transparency of 8 × 10^− 4 Ω cm and 88.1% were obtained, respectively. A critical P_H2 was expected to improve the carrier mobility by increasing the crystallinity of the film. However, above this value, conductivity reduced due to the formations of oxides such as ZnO and Al₂O₃ in the AZO films.     

Structural and optical studies on dc reactive magnetron sputtered Cu2O films

Cuprous oxide (Cu₂O) thin films were deposited by dc reactive magnetron sputtering technique onto glass substrates by sputtering of pure copper target in a mixture of argon and oxygen gases under various oxygen partial pressures in the range 8 × 10^− 3–1 × 10^− 1 Pa at a constant substrate temperature of 473 K and a sputtering pressure of 4 Pa. The dependence of cathode potential on the oxygen partial pressure was explained in terms of cathode poisoning effect. The influence of oxygen partial pressure on the structural and optical properties of Cu₂O films was systematically studied. Single phase films of Cu₂O were obtained at an oxygen partial pressure of 2 × 10^− 2 Pa. The films formed at an oxygen partial pressure of 2 × 10^− 2 Pa were polycrystalline with cubic structure and exhibited an optical band gap of 2.04 eV.     

Effect of Zn addition,strain rate and deformation temperature on the tensile properties of Sn–3.3 wt.% Ag solder alloy

Stress–strain characteristics of the binary Sn–3.3 wt.% Ag and the tertiary Sn–3.3 wt.% Ag–1 wt.% Zn solder alloys were investigated at various strain rates (SR, ε^·) from 2.6 × 10^− 4 to 1.0 × 10^− 2 s^− 1 and deformation temperatures from 300 to 373 K. Addition of 1 wt.% Zn to the binary alloy increased the yield stress σ_y and the ultimate tensile stress σ_UTS while a decrease of ductility (total elongation ε_T) was observed. Increasing the strain rate (ε^·) increased both σ_y and σ_UTS according to the power law σ = C ε^·m. A normal decrease of ε_T with strain rate was observed according to an empirical equation of the form ε_T = A exp (− λε^·); A and λ are constants. Increasing the deformation temperature decreased both σ_y and σ_UTS in both alloys, and decreased the total elongation ε_T in the Zn-free binary alloy, whereas ε_T was increased in the Zn-containing alloy. The activation energy was determined as 41 and 20 kJ mol^− 1 for these alloys, respectively. The results obtained were interpreted in terms of the variation of the internal microstructure in both alloys. The internal microstructural variations in the present study were evaluated by optical microscopy, electron microscopy and X-ray diffraction. The results show the importance of Zn addition in enhancing the mechanical strength of the Sn–3.3 wt.% Ag base alloy.     

Synthesis of nanoparticle zinc phosphate dihydrate by solid state reaction at room temperature and its thermochemical study

Nanoparticle zinc phosphate dihydrate was prepared by solid-state reaction at ambient temperature from Na₃PO₄·12H₂O and ZnSO₄·7H₂O, and characterized by X-ray, Raman, FT-IR spectra and TEM. Thermochemical study was performed by a RD496-III microcalorimeter at 298.15 K. The results reveal that the obtained product is Zn₃(PO₄)₂·2H₂O with spherical shape and particle size is between 40–50 nm. The standard enthalpy value for above reaction is calculated as − 45.793 kJ·mol^− 1. The standard enthalpy of formation for zinc phosphate dihydrate is recommended as − 3788.607 kJ·mol^− 1.