纳米金属银、铜辅助化学刻蚀制绒金刚线切割多晶硅的研究

以金刚线切割多晶硅为原料,研究不同纳米金属催化剂(银、铜)辅助化学刻蚀对纳米结构引入及多晶硅片表面制绒效果的影响。研究结果表明:不同纳米金属物种诱导刻蚀对硅片表面形貌结构的影响巨大,相比于纳米银辅助刻蚀形成的硅纳米线阵列结构而言,纳米铜辅助刻蚀形成的倒金字塔结构在各方面的性能均比较突出,大面积微尺度的倒金字塔阵列结构可以更完美地融合表面低反射率和钝化不佳之间的矛盾,且硅片表面切割纹去除效果明显。当金属铜辅助化学刻蚀制绒15 min时,倒金字塔结构最规则、均匀,且在300~1 100 nm波段范围内,反射率由原片的41.8%降低至5.8%。同时倒金字塔形貌具有优越的减反效果和去除切割纹能力,使得制绒金刚线切割多晶硅片有望用来制备高效率的太阳能电池。     

金刚石线锯切割多晶硅片表面制绒工艺研

晶体硅片的制绒技术是太阳能电池制造工艺中的关键步骤。本研究以工业中酸制绒方法为基础, 研究了腐蚀时间、浓度对绒面结构以及反射率的影响。此外, 还采用金属催化化学腐蚀法进行制绒, 选用氢氟酸和硝酸银作为腐蚀液。而且对两种制绒方法效果进行了对比。研究获得的最优绒面结构及反射率结果的实验条件为: 氢氟酸浓度4.6 mol/L、硝酸银浓度0.02 mol/L, 室温下反应90 min, 得到的平均反射率为8%, 远低于目前多晶硅片制绒生产标准。     

金刚石线锯切割多晶硅片表面制绒工艺研究

晶体硅片的制绒技术是太阳能电池制造工艺中的关键步骤。本研究以工业中酸制绒方法为基础,研究了腐蚀时间、浓度对绒面结构以及反射率的影响。此外,还采用金属催化化学腐蚀法进行制绒,选用氢氟酸和硝酸银作为腐蚀液。而且对两种制绒方法效果进行了对比。研究获得的最优绒面结构及反射率结果的实验条件为:氢氟酸浓度4.6 mol/L、硝酸银浓度0.02 mol/L,室温下反应90 min,得到的平均反射率为8%,远低于目前多晶硅片制绒生产标准。     

金刚线切割多晶硅片表面减反射绒面的制备

为解决金刚线切割多晶硅片表面制绒的问题,提出了一种创新的两步腐蚀制备硅表面陷光结构的方法。先以浓硫酸作为添加剂去除表面线痕,然后通过酸雾腐蚀法获得一种微米纳米复合的多孔陷光结构。样品在300～1100nm波长范围内的平均光反射率被降至8.6%,减反射效果优良,少子寿命提升0.6μs以上。此方法具有操作简单,无需复杂设备,成本低等优点,易实现工业化生产。     

多晶硅表面制绒技术研究现状

光伏产业在新能源发展规划中占有重要地位,目前多晶硅太阳能电池已经成为太阳能电池市场主流。硅片表面绒面的质量对太阳能电池转换效率有重要影响,多晶硅表面制绒技术也越来越受到世界各国的重视。掌握多晶硅表面制绒技术的原理及特点对提高表面绒面质量十分重要。首先分析多晶硅表面制绒的技术要求,随后根据不同的技术原理,依次对干法制绒技术、湿法制绒技术以及掩膜制绒技术进行综述,详细分析不同制绒技术的技术特点并阐述其应用实例,随后从绒面质量、制绒效率、成本以及环保性等方面对多晶硅制绒技术进行评述,最后对多晶硅制绒技术的发展趋势进行预测。     

利用金属辅助化学腐蚀法在硅表面获得纳米绒面结构以提升多晶硅太阳电池效率

在硅片表面制备绒面结构能够有效降低太阳光在硅片表面的反射损失,是提高太阳能电池转换效率的一条重要途径。通过真空热蒸发法在多晶硅片上沉积纳米银颗粒,利用金属辅助化学腐蚀(MACE)法,制备了不同腐蚀时间下的纳米绒面结构,其中,腐蚀时间为60s的纳米绒面的平均反射率低至4.66%(300~1100nm)。同时,对腐蚀时间为60s的纳米绒面用KOH溶液进行优化处理,将KOH处理前后的多晶硅片采用常规电池工艺进行电池制备研究。对比发现,经过KOH处理后的电池效率比未经KOH处理的电池效率提高了0.43%。     

太阳能电池多晶硅表面激光制绒技术研究进展

太阳能作为一种绿色可持续的清洁能源，可以转化为热能或电能，是传统能源最重要的替代品。多晶硅太阳能电池由于具有较低的成本而被广泛用于光伏发电领域，降低多晶硅片表面反射率是提升多晶硅太阳能电池效率的重要手段之一。本文分析了硅基太阳能绒面微结构的吸光原理，梳理了各类常见制绒方法。在此基础之上，总结了激光制绒的各类加工方法，概括了不同激光加工方法对多晶硅片表面绒面产生的相应效果，其中，激光复合方法制绒的效果普遍优于单一激光制绒。随后从激光加工工艺的角度，分析了激光加工主要参数对绒面微结构形貌的影响：由于不同波长下多晶硅材料的吸收率不同，各加工效果亦不相同；通过调整脉冲激光加工中的重复频率、扫描速度等参数，可影响制绒面凹坑间距进而改变绒面微结构的密度，通过调整功率、单脉冲能量等因素则影响微结构的烧蚀程度或深度；而入射角度、能量分布及脉宽对制绒亦有明显效果。对比发现，各典型绒面微结构的形貌中，V形纹理比U形纹理更能有效地捕捉吸收光线，而二维复合型陷光微结构比单一型陷光微结构吸光性更好。在此基础之上，论述了化学后处理对提升多晶硅片绒面质量的作用体现，表明化学后处理能改善或消除多晶硅片经激光制绒后形成...     

醋酸铜辅助催化刻蚀制备金刚线切割多晶硅片绒面

金刚线切割多晶硅片表面减反射结构难以制备的问题阻碍着多晶硅光伏的进步.银辅助的酸腐蚀是解决这一问题的较好方法,但银的消耗和废液处理等增加了成本.本研究提出了醋酸铜辅助催化刻蚀金刚线切割多晶硅片方案,考察了刻蚀反应温度和时间对硅片表面形貌的影响,确定了最优的反应温度和时间分别为25℃和5 min.在此条件下,所获得的多晶...     

银铜双原子MACE法制备多晶硅陷光结构及其性能的研究

采用一步银铜双原子金属辅助化学腐蚀(MACE)法,于室温下在多晶硅表面制备纳米陷光结构,研究了腐蚀时间及银铜摩尔比对多晶硅表面反射率和形貌的影响。用分光光度计测量了多晶硅表面的反射率,用扫描电镜观察了表面形貌。发现银铜双原子MACE法所形成的结构比银单原子或铜单原子MACE法所形成的结构更加平整且具有更低的表面反射率室温下经过银铜两种金属原子协同催化腐蚀后,在银铜原子摩尔比低于1/10时多晶硅表面形成了纳米多孔状与槽状结构共存的复合结构,在银铜原子摩尔比高于1/5时多晶硅表面形成密集的纳米线结构。研究结果表明,孔状与槽状的复合结构具有良好的陷光效果,当银铜原子摩尔比为1/10,腐蚀时间为180s时,多晶硅的反射率达到最低,仅为6.23%。     

含氟表面活性剂对多晶硅绒面微结构的影响

在酸制绒液中加入含氟表面活性剂,对多晶硅片制绒。然后通过扫描电子显微镜观察多晶硅表面织构,并在此基础上分析含氟表面活性剂对腐蚀效果的影响。实验结果表明:虽然传统酸液对多晶硅制绒是各向同性的,但加入含氟表面活性剂后,酸腐蚀出现各向异性腐蚀特性;由此制备的多晶硅片反射率从25.7%下降到了23.9%,表面出现变形的金字塔、三角形等,且不同晶面的金字塔和三角形的大小和倾斜角度不同。最后根据杨氏理论,从界面张力的角度解释了含氟表面活性剂对制绒的影响机理。     

Comparative Analysis of Fracture Strength of Slurry and Diamond Wire Sawn Multicrystalline Silicon Solar Wafers

This paper presents an analysis of fracture strength of multicrystalline silicon (mc‐Si) solar wafers produced by slurry and diamond wire sawing. The wafers were bent in two orthogonal orientations relative to the saw marks. The fracture strength of slurry sawn wafers increases gradually from wire entry to wire exit whereas the strength variation in the wire feed direction is small. The fracture strength of diamond wire sawn wafers is bi‐directional, with a higher strength if bent perpendicular to the saw marks and a lower strength if bent parallel to the saw marks. The fracture strength variation is related to the microcracks generated in the vicinity of grit‐induced surface damage.     

Mechanical Strength of Silicon Wafers Cut by Loose Abrasive Slurry and Fixed Abrasive Diamond Wire Sawing

This paper reports on the mechanical strength of polycrystalline silicon wafers cut by loose abrasive slurry and fixed abrasive diamond wire sawing processes. Four line bending and biaxial flexure tests are used to evaluate the fracture strength of the wafers. Fracture strength of the wafers depends on the location, size, and orientation of microcracks in the silicon wafer and the distribution and magnitude of applied stresses. Measurement of microcracks at the wafer edge and center shows that edge cracks are typically larger than center cracks. Fixed abrasive diamond wire sawn wafers are found to have a higher crack density but smaller average crack length. Wafer fracture in four line bending is found to be primarily due to the propagation of edge cracks while center cracks are found to be the primary cause of wafer failure in biaxial flexure tests. Fracture mechanics based analyses demonstrate that crack orientation plays a significant role in four line bending, but not in biaxial flexure. Correlations of the wafer fracture strength and critical crack length agree well with microcrack measurements. The fracture strength of diamond cut wafers is found to be comparable or superior to the strength of slurry cut wafers.     

Influence of surfactant addition for the texture etching process on multi-crystalline silicon wafer

This study investigates the effects of different recipes and concentrations of surfactant on the texture and reflectance of a multi-crystalline silicon wafer surface. The morphology of the surface was examined and photographed using a field emission scanning electronic microscope. The reflectance of the surface was measured and analyzed using a self-designed optical system. The results of this study show that a higher hydrocarbon-surfactant (CH-surfactant) concentration in the etchant resulted in a slower reaction time. The optimum concentration of CH-surfactant was 1%. However, there were many white bubbles in the etching process. The optimum recipe for surfactant included fluoride 2% to diminish these bubbles. The reflectance was less than 22% in visible light. This cost effective acid chemical etching method is suitable for texturing silicon surfaces on 50?nm nanostructures. This is a critical criterion for determining the optimum recipe for surface texturing of acidic etching in solar cells.     

Fixed Abrasive Diamond Wire Saw Slicing of Single-Crystal Silicon Carbide Wafers

This article investigates the slicing of single-crystal silicon carbide (SiC) with a fixed abrasive diamond wire. A spool-to-spool rocking motion diamond wire saw machine using a 0.22 mm nominal diameter diamond wire with 20 µm average size diamond grit was used. The effect of wire downfeed speed on wafer surface roughness and subsurface damage was first investigated. The surface marks generated by loose diamond grit and stagnation of the wire during the change of the wire-cutting direction were studied. The use of scanning acoustic microscopy (SAcM) as a nondestructive evaluation method to identify the subsurface damage was explored. Effects of using a new diamond wire on cutting forces and surface roughness were also investigated. Scanning electron microscopy has been used to examine the machined surfaces and wire wear. This study demonstrated the feasibility of fixed abrasive diamond wire cutting of SiC wafers and the usage of a SAcM to examine the subsurface damage.     

Nanostructure formation and passivation of large-area black silicon for solar cell applications

Nanoscale textured silicon and its passivation are explored by simple low-cost metal-assisted chemical etching and thermal oxidation, and large-area black silicon was fabricated both on single-crystalline Si and multicrystalline Si for solar cell applications. When the Si surface was etched by HF/AgNO(3) solution for 4 or 5 min, nanopores formed in the Si surface, 50-100 nm in diameter and 200-300 nm deep. The nanoscale textured silicon surface turns into an effective medium with a gradually varying refractive index, which leads to the low reflectivity and black appearance of the samples. Mean reflectance was reduced to as low as 2% for crystalline Si and 4% for multicrystalline Si from 300 to 1000 nm, with no antireflective (AR) coating. A black-etched multicrystalline-Si of 156 mm × 156 mm was used to fabricate a primary solar cell with no surface passivation or AR coating. Its conversion efficiency (η) was 11.5%. The cell conversion efficiency was increased greatly by using surface passivation process, which proved very useful in suppressing excess carrier recombination on the nanostructured surface. Finally, a black m-Si cell with efficiency of 15.8% was achieved by using SiO(2) and SiN(X) bilayer passivation structure, indicating that passivation plays a key role in large-scale manufacture of black silicon solar cells.     

Texturization of multicrystalline silicon by wet chemical etching for silicon solar cells

Two kinds of surface texturization of mc-Si obtained by wet chemical etching are investigated in view of implementation in the solar cell processing. The first one was the acid texturization of saw damage on the surface of multicrystalline silicon (mc-Si). The second one was macro-porous texturization prepared by double-step chemical etching after KOH saw damage layer was previously removed.Both methods of texturization are realized by chemical etching in HF-HNO₃-H₂O with different additives. Macro-porous texturization allows to obtain effective reflectivity (R_eff) in the range 9–20% from bare mc-Si. This R_eff value depends on the time of second step etching that causes porous structure modification. The internal quantum efficiency (IQE) of cells with this kind of texturization has possibility to reach better conversion efficiency than the standard mc-Si solar cells. However, low shunt resistance depends on morphology of porous layer and it is the main factor which can reduce open circuit voltage and conversion efficiency of cells.The effective reflectivity is about 17% for acid texturized mc-Si wafer. The investigation of surface morphology by scanning electron microscopy (SEM) revealed that the dislocations are appearing during chemical etching and they can reduce open circuit voltage. The density of the dislocations can be reduced by controlling depth of etching and optimisation of acid solution.     

金刚石线锯切割大直径SiC单晶

采用金刚石线切割大直径的SiC单晶,研究了金刚石线锯的切割机理和切割参数,给出切割SiC单晶的实验结果.研究了金刚石线的寿命及各切割参数对线径减少量、翘曲度、表面粗糙度的影响.用光学显微镜观察了磨损的金刚石线和切割表面.     

磁场方向对碱腐蚀构建多晶硅绒面结构的影响

在零磁场和2T、4T磁场中用NaOH溶液腐蚀制备多晶硅绒面结构,样品板平面分别平行和垂直于磁场放置。用电子天平称重表征硅片的腐蚀程度、用奥林巴斯LEXT OLS4100共聚焦显微镜观察多晶硅片形貌、用Ocean Optics USB4000光谱仪测量多晶硅片的反射率、用WT-1200硅片测试仪测量样品的少子寿命,研究了磁场方向对碱腐蚀构建多晶硅绒面结构的影响。结果表明：随着磁感应强度的提高多晶硅片的腐蚀程度严重,绒面结构变得均匀和细腻,反射率降低;在磁感应强度相同的条件下碱液中沿着磁场方向运动的OH^-离子不受磁场力作用,而运动方向与磁场方向不完全一致的OH^-离子受磁场产生的Lorenz力作用。Lorenz力使板平面垂直于磁场方向的硅片样品腐蚀程度更加严重、绒面和断层状结构细腻程度更加显著、少子的寿命更长、反射率更低。磁感应强度为4T时反射率降低到14.5%,在用碱液腐蚀制备多晶硅绒面结构过程中施加强磁场,板平面垂直磁场方向放置硅片减反射效果更加显著。