Nonvolatile memory and opto-electrical characteristics of organic memory devices with zinc oxide nanoparticles embedded in the tris(8-hydroxyquinolinato)aluminum light-emitting layer

The nonvolatile organic memory devices based on the tris(8-hydroxyquinolinato)aluminum (Alq₃) emitting layer embedded with zinc oxide nanoparticles (ZnO-NPs) are reported. The devices have a typical tri-layer structure consisting of the Alq₃/ZnO-NPs/Alq₃ layers interposed between indium tin oxide (ITO) and aluminum (Al) electrodes. An external bias is used to program the ON and OFF states of the device that are separated by a four-orders-of-magnitude difference in conductivity. No significant degradation of the device is observed in either the ON or OFF state after continuous stress (∼10⁵ s) and multicycle (∼10³ cycles) testings. These nanoparticles behave as the charge trapping units, which enable the nonvolatile electrical bistability when biased to a sufficiently high voltage. Impedance spectroscopy, capacitance–voltage (C–V) and current–voltage (I–V) analysis are used to verify the possible physical mechanism of the switching operation. Moreover, it is found that the location of the ZnO-NPs could affect the memory and opto-electrical characteristics of the devices, such as the ON/OFF ratio, threshold voltage and turn-on voltage, which can be attributed to the influence of the ZnO-NPs and diffused Al atoms in the bulk of the Alq₃ layer.     

Electrical bistability,negative differential resistance and carrier transport in flexible organic memory device based on polymer bilayer structure

Bistable nonvolatile memory devices containing two different layers of polymers, viz. MEH-PPV (poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenyl vinylene]) and PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)) has been fabricated by a simple spin-coating technique on flexible polyimide (PI) substrates with a structure Al/MEH-PPV/PEDOT:PSS/Ag-Pd/PI. The current–voltage measurements of the as-fabricated devices showed a nonvolatile electrical bistability with electric field induced charge transfer through the polymer layers and negative differential resistance (NDR) which is attributed to the charge trapping in the MEH-PPV layer. The current ON/OFF ratio between the high-conducting state (ON state) and low-conducting state (OFF state) is found to be of the order of 10³ at room temperature which is comparable to organic field effect transistor based memory devices. We propose that such an improvement of rectification ratio (ON/OFF ratio) is caused due to the inclusion of PEDOT:PSS, which serves as a conducting current path for carrier transport; however, NDR is an effect of the trapped charges in the MEH-PPV electron confinement layer. The device shows excellent stability over 10⁴ s without any significant degradation under continuous readout testing in both the ON and OFF states. The carrier transport mechanism of the fabricated organic bistable device has been explained on the basis of different conduction mechanisms such as thermionic emission, space-charge-limited conduction, and Fowler–Nordheim tunneling. A band diagram is proposed to explain the charge transport phenomena. These bilayer structures are free from the drawbacks of the single organic layer based memory devices where the phase separation between the nanoparticles and polymers leads to the degradation of device stability and lifetime.     

Work-function-controlled operation mode transition between photodiode and photoconductor modes in organic photodetectors

The organic photodetectors (OPDs) can be proposed in two different ways: a photodiode system or a photoconductor type, where the external quantum efficiency (EQE) cannot exceed 100% in the former one but it can in the latter one. Whether the electrode-active layer contacts can inject at least one kind of carriers is the critical factor to determine the specific photodetector type. Therefore, the role of electrode/semiconductor contacts in the OPDs needs to be fully understood. In this work, we demonstrate the high performance OPDs based on PTB7:PC₇₁BM bulk heterojunction with the different top metal electrodes (Ag, Au, Al) by incorporating the PFN modified ITO electrode. Ultraviolet photoelectron spectroscopy shows that the work function of ITO is effectively reduced from 4.7 eV to 4.1 eV due to the PFN dipole layer. Combined with current density-voltage characteristics and the EQE, the results indicate the devices show different working modes: a photodiode or photoconductor type OPDs. For the Ag or Au electrode device, the photogenerated charges can rapidly transport to the corresponding electrodes and then to be collected under reverse bias, which meets the photodiode type. However, the Al electrode device with more than 100% EQE presents the photoconductor mode, which is contributed to that the photogenerated charges accumulate around the interface between the PFN layer and the active layer, and then create a tunneling charge injection under reverse bias. Although both the proposed photodiode and photoconductor devices exhibit large signal-to-noise ratio (10⁴∼10⁵), fast response (∼μs), and low working voltage (−0.5 V), these two type devices show their unique strengths due to the different working modes. The photodiode devices have higher detectivity (more than 10¹³ Jones) and broader linear dynamic range (over 120 dB), while the photoconductor ones possess more than 100% EQE and the better responsivity (0.56 A/W). This work may pave a way to obtain the desirable working mode of the photodetectors by simply tuning the electrode work function.     

Organic low voltage rewritable memory device based on PEDOT:PSS/f-MWCNTs thin film

We report on devices constructed using a small quantity (?0.01 wt.%) of functionalized multiwalled carbon nanotubes (f-MWCNTs) embedded in a conducting polymer (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS) matrix and aluminum top electrodes, prepared on indium-tin-oxide (ITO) substrates. Our ITO/(PEDOT:PSS + f-MWCNTs)/Al devices show current bistability. The low resistance ON-state, as well as the high resistance OFF state, retain the information for hours and are stable after hundreds of write–read–erase–read (WRER) cycles, being potentially interesting for erasable and rewritable volatile memory device applications. Moreover, the operation voltages used for performing these WRER cycles are very low. The threshold voltage for OFF to ON switching can be adjusted changing the f-MWCNTs concentration. Our results suggest that the nanotubes are necessary for the production of an inhomogeneous electric field playing a role in the electroforming (dielectric breakdown) of the aluminum oxide layer at the Al₂O₃/(PEDOT:PSS) interface.     

Electrically conductive anti‐reflecting nanostructure for chalcogenide thin‐film solar cells

Electrically conducting aluminum (Al)‐doped ZnO nanorods (NRs) film has been introduced as an anti‐reflective (AR) layer for effective light trapping in chalcogenide thin‐film solar cells. Results indicate that the Al‐doping significantly reduced the electrical contact resistance between the Ag top electrode and the AR layer. The Al‐doped ZnO NRs exhibited low average reflectance (4.5%) over the entire visible and near‐infrared range, and changed the nature of electrical contact between the Ag electrode and the AR layer from Schottky to Ohmic. Finally, the CuInS₂ solar cell coated with the Al‐doped ZnO NRs exhibited huge enhancement in photovoltaic efficiency from 9.57% to 11.70% due to the lowering series resistance and the increase in the short‐circuit current density, when compared with that of a solar cell without the AR layer. Copyright © 2014 John Wiley & Sons, Ltd.     

Effect of Temperature and Illumination on the Electrical Characteristics of Polymer–Fullerene Bulk‐Heterojunction Solar Cells

The current–voltage characteristics of ITO/PEDOT:PSS/OC₁C₁₀‐PPV:PCBM/Al solar cells were measured in the temperature range 125–320 K under variable illumination, between 0.03 and 100 mW cm^–2 (white light), with the aim of determining the efficiency‐limiting mechanism(s) in these devices, and the temperature and/or illumination range(s) in which these devices demonstrate optimal performance. (ITO: indium tin oxide; PEDOT:PSS: poly(styrene sulfonate)‐doped poly(ethylene dioxythiophene); OC₁C₁₀‐PPV: poly[2‐methoxy‐5‐(3,7‐dimethyl octyloxy)‐1,4‐phenylene vinylene]; PCBM: phenyl‐C₆₁ butyric acid methyl ester.) The short‐circuit current density and the fill factor grow monotonically with temperature until 320 K. This is indicative of a thermally activated transport of photogenerated charge carriers, influenced by recombination with shallow traps. A gradual increase of the open‐circuit voltage to 0.91 V was observed upon cooling the devices down to 125 K. This fits the picture in which the open‐circuit voltage is not limited by the work‐function difference of electrode materials used. The overall effect of temperature on solar‐cell parameters results in a positive temperature coefficient of the power conversion efficiency, which is 1.9 % at T = 320 K and 100 mW cm^–2 (2.5 % at 0.7 mW cm^–2). The almost‐linear variation of the short‐circuit current density with light intensity confirms that the internal recombination losses are predominantly of monomolecular type under short‐circuit conditions. We present evidence that the efficiency of this type of solar cell is limited by a light‐dependent shunt resistance. Furthermore, the electronic transport properties of the absorber materials, e.g., low effective charge‐carrier mobility with a strong temperature dependence, limit the photogenerated current due to a high series resistance, therefore the active layer thickness must be kept low, which results in low absorption for this particular composite absorber.     

Preparation and Memory Performance of a Nanoaggregated Dispersed Red 1‐Functionalized Poly (N‐vinylcarbazole) Film via Solution‐Phase Self‐Assembly

A nanoaggregated dispersed red 1‐grafted poly(N‐vinylcarbazole) (abbreviated PVDR) is self‐assembled via π–π stacking interactions of the carbazole groups in the polymer system after adding a solution of PVDR in N,N‐dimethylformamide to dichloromethane. Upon self‐assembly, the nanoaggregated PVDR film displays helical columnar stacks with large grain sizes, whereas a non‐aggregated PVDR film exhibits an amorphous morphology with smaller grain size. A write‐once read‐many‐times (WORM) memory device is shown whereby a pre‐assembled solution of PVDR is spin‐coated as the active layer and is sandwiched between an aluminum electrode and an indium‐tin‐oxide (ITO) electrode. This device shows very good memory performance, with an ON/OFF current ratio of more than 10⁵ and a low misreading rate through the precise control of the ON and OFF states. The stability of the nanoaggregated PVDR device is much higher than that of the non‐nanoaggregated PVDR device. This difference in device stability under constant voltage stress can be mainly attributed to the difference in the film crystallinity and surface morphology. No degradation in current density was observed for the ON‐ and OFF‐states after more than one hundred million (10⁸) continuous read cycles indicating that both states were insensitive to the read cycles. These results render the nanoaggregated PVDR polymer as promising components for high‐performance polymer memory devices.     

Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory

Although there have been attempts to use non‐lead based halide perovskite materials as insulating layers for resistive switching memory, the ratio of low resistance state (LRS) to high resistance state (HRS) ( = ON/OFF ratio) and/or endurance is reported to be mostly lower than 10³. Resistive switching memory characteristics of layered (BzA)₂CuBr₄ (BzA = C₆H₅CH₂NH₃) perovskite with high ON/OFF ratio and long endurance are reported here. The X‐ray diffraction (XRD) pattern of the deposited (BzA)₂CuBr₄ layer shows highly oriented (00l) planes perpendicular to a Pt substrate. An Ag/PMMA/(BzA)₂CuBr₄/Pt device shows bipolar switching behavior. A forming step at around +0.5 V is observed before the repeated bipolar switching at the SET voltage of +0.2 V and RESET voltage of ‐0.3 V. The ON/OFF ratio as high as =10⁸ is monitored along with an endurance of ≈2000 cycles and retention time over 1000 s. The high ON/OFF ratio enables multilevel storage characteristics as confirmed by changing the compliance currents. Ohmic conduction at the LRS and Schottky emission at HRS are involved in electrochemical metallization process. The bipolar resistive switching property is retained after storing the device at ambient condition under relative humidity of about 50% for 2 weeks, which indicates that (BzA)₂CuBr₄ is stable memory material.     

Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs

A reflecting contact to a p-GaN layer, used in fabrication of blue flip-chip light-emitting diodes, has been produced by deposition of thin indium tin oxide (ITO) films by electron-beam evaporation. The high reflectance of the contact, which exceeds that of a Ni/Ag contact, provides a 15–20% increase in the external quantum efficiency of light-emitting crystals. The forward voltage drops for crystals with an ITO(5 nm)/Ag(220 nm) contact are comparable with the corresponding values for crystals with a Ni(1.5 nm)/Ag(220 nm) contact. The specific resistance of the contact with an ITO layer is 3.7 × 10^?3 Ω cm². It is shown that, for ITO films produced by the given method, the optimal thicknesses providing the best electrical and optical characteristics of the crystals are in the range 2.5–5.0 nm.

     

Charge‐Transporting Polymers based on Phenylbenzoimidazole Moieties

A series of novel styrene functionalized monomers with phenylbenzo[d]imidazole units and the corresponding homopolymers are prepared. These side‐chain polymers show high glass‐transition temperatures that even exceed the corresponding value for the common electron‐transporting material 1,3,5‐tris(1‐phenyl‐1H‐benzo[d]imidazol‐2‐yl)benzene (TPBI). Similar electronic behavior between the polymers and TPBI is shown. The polymers are used as matrices for phosphorescent dopants. The fabricated devices exhibit current efficiencies up to 38.5 cd A^?1 at 100 cd m^?2 and maximum luminances of 7400 cd m^?2 at 10 V with a minimum turn‐on voltage as low as 2.70 V in single‐layer devices with an ITO/PEDOT:PSS anode (ITO = indium tin oxide, PEDOT:PSS = poly(3,4‐ethylenedioxythiophene) doped with poly(styrenesulfonate)) and a CsF/Ca/Ag cathode.     

Conception of Stretchable Resistive Memory Devices Based on Nanostructure‐Controlled Carbohydrate‐block‐Polyisoprene Block Copolymers

It is discovered that the memory‐type behaviors of novel carbohydrate‐block ‐polyisoprene (MH‐b ‐PI) block copolymers‐based devices, including write‐once‐read‐many‐times, Flash, and dynamic‐random‐access‐memory, can be easily controlled by the self‐assembly nanostructures (vertical cylinder, horizontal cylinder, and order‐packed sphere), in which the MH and PI blocks, respectively, provide the charge‐trapping and stretchable function. With increasing the flexible PI block length, the stretchability of the designed copolymers can be significantly improved up to 100% without forming cracks. Thus, intrinsically stretchable resistive memory devices (polydimethylsiloxane(PDMS)/carbon nanotubes(CNTs)/MH‐b ‐PI thin film/Al) using the MH‐b ‐PI thin film as an active layer is successfully fabricated and that using the MH‐b ‐PI_12.6k under 100% strain exhibits an excellent ON/OFF current ratio of over 10⁶ (reading at ?1 V) with stable V _set around ?2 V. Furthermore, the endurance characteristics can be maintained over 500 cycles upon 40% strain. This work establishes and represents a novel avenue for the design of green carbohydrate‐derived and stretchable memory materials.     

Synthesis of Alternating Copolysiloxane with Terthiophene and Perylenediimide Derivative Pendants for Involatile WORM Memory Device

Alternating copolysiloxane with both electron donor terthiophene and electron acceptor perylenediimide derivative pendants (PTSi‐alt‐PDISi) is synthesized successfully. The polymer exhibits high decomposition and glass transition temperatures, good film‐forming ability, and high morphological stability. The estimated HOMO and LUMO energy levels of PTSi‐alt‐PDISi are –5.77 and –3.90 eV, respectively. The fabricated memory device with the configuration of ITO/PTSi‐alt‐PDISi/Au(Al) shows nonvolatile write‐once‐read‐many‐times (WORM) memory characteristics. Its turn‐on threshold voltage is 1.7 V, while its ON/OFF current density ratio is around 10⁴ in ambient atmosphere. The well‐defined memory property of PTSi‐alt‐PDISi is attributed to the transition of the pendant terthiophene and perylenediimide groups from the disoriented state to the ordered face‐to‐face conformation at the threshold voltage and the charge transfer interaction between pendent terthiophene donor and perylenediimide acceptor moieties, which are confirmed by XRD patterns and fluorescence emission measurement. This suggests that the new donor–acceptor polysiloxanes have potential applications in the field of memory devices.     

Stable,Glassy, and Versatile Binaphthalene Derivatives Capable of Efficient Hole Transport,Hosting, and Deep‐Blue Light Emission

Organic light‐emitting diodes (OLEDs) have great potential applications in display and solid‐state lighting. Stability, cost, and blue emission are key issues governing the future of OLEDs. The synthesis and photoelectronics of a series of three kinds of binaphthyl (BN) derivatives are reported. BN_1–3 are “melting‐point‐less” and highly stable materials, forming very good, amorphous, glass‐like films. They decompose at temperatures as high as 485–545 °C. At a constant current density of 25 mA cm^?2, an ITO/BN₃/Al single‐layer device has a much‐longer lifetime (>80 h) than that of an ITO/NPB/Al single‐layer device (8 h). Also, the lifetime of a multilayer device based on BN₁ is longer than a similar device based on NPB. BNs are efficient and versatile OLED materials: they can be used as a hole‐transport layer (HTL), a host, and a deep‐blue‐light‐emitting material. This versatility may cut the cost of large‐scale material manufacture. More importantly, the deep‐blue electroluminescence (emission peak at 444 nm with CIE coordinates (0.16, 0.11), 3.23 cd A^?1 at 0.21 mA cm^?2, and 25200 cd m^?2 at 9 V) remains very stable at very high current densities up to 1000 mA cm^?2.     

Memory stabilities and mechanisms of organic bistable devices with a phase-separated poly(methylmethacrylate)/poly(3-hexylthiophene) hybrid layer

Organic bistable devices (OBDs) with a poly(methylmethacrylate) (PMMA)/poly(3-hexylthiophene) (P3HT) hybrid layer, acting as a charge storage region, formed by using a vertical phase self-separation method were fabricated. The current–voltage curves of the Al/P3HT/PMMA/indium-tin-oxide devices exhibited current bistabilities with a maximum ON/OFF ratio of 1 × 10⁴. The write-read-erase-read sequence results demonstrated the switching characteristics of the OBDs. The cycling endurance number of the ON/OFF switching for the OBD was above 1 × 10⁵. The memory characteristics of the OBDs were attributed to trapping and detrapping processes of electrons into and out of the P3HT/PMMA heterointerfaces.     

Lending Triarylphosphine Oxide to Phenanthroline: a Facile Approach to High‐Performance Organic Small‐Molecule Cathode Interfacial Material for Organic Photovoltaics utilizing Air‐Stable Cathodes

Cathode interfacial material (CIM) is critical to improving the power conversion efficiency (PCE) and long‐term stability of an organic photovoltaic cell that utilizes a high work function cathode. In this contribution, a novel CIM is reported through an effective and yet simple combination of triarylphosphine oxide with a 1,10‐phenanthrolinyl unit. The resulting CIM possesses easy synthesis and purification, a high T _g of 116 °C and attractive electron‐transport properties. The characterization of photovoltaic devices involving Ag or Al cathodes shows that this thermally deposited interlayer can considerably improve the PCE, due largely to a simultaneous increase in V _oc and FF relative to the reference devices without a CIM. Notably, a PCE of 7.51% is obtained for the CIM/Ag device utilizing the active layer PTB7:PC₇₁BM, which far exceeds that of the reference Ag device and compares well to that of the Ca/Al device. The PCE is further increased to 8.56% for the CIM/Al device (with J _sc = 16.81 mA cm^?2, V _oc = 0.75 V, FF = 0.68). Ultraviolet photoemission spectroscopy studies reveal that this promising CIM can significantly lower the work function of the Ag metal as well as ITO and HOPG, and facilitate electron extraction in OPV devices.     

Highly-reproducible nonvolatile memristive devices based on polyvinylpyrrolidone: Graphene quantum-dot nanocomposites

The properties of nonvolatile memristive devices (NMD) fabricated utilizing organic/inorganic hybrid nanocomposites were investigated due to their superior advantages such as mechanical flexibility, low cost, low-power consumption, simple technological process in fabrication and high reproducibility. The current-voltage (I-V) curves for the Al/polyvinylpyrrolidone (PVP): graphene quantum-dot (GQD)/indium-tin-oxide (ITO) memristive devices showed current bistability characteristics at 300 K. The window margins corresponding to the high-conductivity (ON) state and the low-conductivity (OFF) state of the devices increased with increasing concentration of the GQDs. The ON/OFF ratio of the optimized device was 1 × 10⁴, which was the largest memory margin among the devices fabricated in this research. The endurance number of ON/OFF switching was above 1 × 10² cycles, and the retention time was relatively constant, maintaining a value above 10⁴ s. The devices showed high reproducibility with the writing voltage being distributed between −0.5 and −1.5 V and the erasing voltage being distributed between 2 and 3 V. The ON state currents remained between 0.02 and 0.03 A, and the OFF state currents stayed between 10⁻⁶ and 10⁻⁴ A. The carrier transport mechanisms are illustrated by using both the results obtained by fitting the I-V curves and the energy band diagrams of the devices.     

High‐Performance Nonvolatile Transistor Memories of Pentacence Using the Green Electrets of Sugar‐based Block Copolymers and Their Supramolecules

Reported here are the nonvolatile electrical characteristics of pentacene‐based organic field‐effect transistor (OFET) memory devices created from the green electrets of sugar‐based block copolymer maltoheptaose‐block‐polystyrene (MH‐b‐PS), and their supramolecules with 1‐aminopyrene (APy). The very hydrophilic and abundant‐hydroxyl MH block is employed as a charge‐trapping site, while the hydrophobic PS block serves as a matrix as well as a tunneling layer. The orientation of the MH nanodomains could be well controlled in the PS matrix with random spheres, vertical cylinders, and ordered horizontal cylinders via increasing solvent annealing time, leading to different electrical switching characteristics. The electron‐trapping ability induced by the horizontal‐cylinder MH is stronger than those of the random‐sphere and vertical‐cylinder structures, attributed to the effective contact area. The electrical memory window of the device is further improved via the supramolecules of hydrogen‐bonding 1‐aminopyrene to the MH moieties of MH‐b‐PS for enhancing the hole‐trapping ability. The optimized device using the horizontal cylinders of the supramolecule electret exhibits the excellent memory characteristics of a wide memory window (52.7 V), retention time longer than 10⁴ s with a high ON/OFF ratio of >10⁵, and stable reversibility over 200 cycles. This study reveals a new approach to achieve a high‐performance flash memory through the morphology control of sugar‐based block copolymers and their supramolecules.     

Bistable electrical switching and nonvolatile memory effect in mixed composite of oxadiazole acceptor and carbazole donor

Bistable electrical switching and nonvolatile memory devices with the configuration of indium tin oxide (ITO)/active layer/aluminum (Al) are reported. The active layer were prepared from the mixed compositions of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole, (PBD) and poly(N-vinylcarbazole) (PVK). The as-fabricated ITO/PBD:PVK/Al sandwiched devices exhibited rewriteable flash memory property. Due to the strong interaction between oxadiazole acceptor and carbazole donor, the devices demonstrate excellent performance. The memory devices can operate over a small voltage range, the absolute value of switching-on threshold voltage is less than 1 V and the switching-off threshold voltage is less than 3.5 V. The ON/OFF ratio of current switches in the range of 10⁴–10² during the variation of applied voltage and the two different resistance states can be maintained over 4 h.     

Work‐Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light‐Emitting Diodes

Graphene has been considered to be a potential alternative transparent and flexible electrode for replacing commercially available indium tin oxide (ITO) anode. However, the relatively high sheet resistance and low work function of graphene compared with ITO limit the application of graphene as an anode for organic or polymer light‐emitting diodes (OLEDs or PLEDs). Here, flexible PLEDs made by using bis(trifluoromethanesulfonyl)amide (TFSA, [CF₃SO₂]₂NH) doped graphene anodes are demonstrated to have low sheet resistance and high work function. The graphene is easily doped with TFSA by means of a simple spin‐coating process. After TFSA doping, the sheet resistance of the TFSA‐doped five‐layer graphene, with optical transmittance of ≈88%, is as low as ≈90 Ω sq^?1. The maximum current efficiency and power efficiency of the PLED fabricated on the TFSA‐doped graphene anode are 9.6 cd A^?1 and 10.5 lm W^?1, respectively; these values are markedly higher than those of the PLED fabricated on pristine graphene anode and comparable to those of an ITO anode.     

Inkjet printed metallizations for Cu(In1−x Ga x )Se2 photovoltaic cells

This study reports the inkjet printing of Ag front contacts on Aluminum doped Zinc Oxide (AZO)/intrinsic Zinc Oxide (i‐ZnO)/CdS/Cu(In_1−xGa_x)Se₂ (CIGS)/Mo thin film photovoltaic cells. The printed Ag contacts are being developed to replace the currently employed evaporated Ni/Al bi‐layer contacts. Inkjet deposition conditions were optimized to reduce line resistivity and reduce contact resistance to the Al:ZnO layer. Ag lines printed at a substrate temperature of 200°C showed a line resistivity of 2.06 µΩ · cm and a contact resistance to Al:ZnO of 8.2 ± 0.2 mΩ · cm² compared to 6.93 ± 0.3 mΩ · cm² for thermally evaporated contacts. These deposition conditions were used to deposit front contacts onto high quality CIGS thin film photovoltaic cells. The heating required to print the Ag contacts caused the performance to degrade compared to similar devices with evaporated Ni/Al contacts that were not heated. Devices with inkjet printed contacts showed 11.4% conversion efficiency compared to 14.8% with evaporated contacts. Strategies to minimize heating, which is detrimental for efficiency, during inkjet printing are proposed. Copyright © 2011 John Wiley & Sons, Ltd.