1.3μm high—power superluminescent diode

The result of the evaporation of Sio/SiO2 two layer antireflection coatings monitored by the MODEL IL 400 DEPOSITION CONTROLLER is re-ported.A superluminescent diode with high output power is fabricated by evaporate-ing antireflection coating on the front facet of 1.3цm buried heterostructure laser.     

Measurement of the modal reflectivity of an antireflection coating on a superluminescent diode

A method for measuring the modal reflectivity of the antireflection coating applied to a laser diode is described and demonstrated. It is based on measurements of the Fabry-Perot modulation depth of the resulting superluminescent diode (SLD) output spectrum at the threshold current of the original laser. A modal reflectivity of less than2 times 10^{-4}has been obtained.     

Accurate measurement of reflectivity over wavelength of a laserdiode antireflection coating using an external cavity laser

A method for measuring laser diode facet antireflection coating over wavelength is presented. The laser diode is coupled to a wavelength-selective external cavity, and laser threshold current over the wavelength region of interest is measured. The coating reflectivity over wavelength is derived from the threshold current data. Reflectivities as low as 1×10^-5 have been measured with good fit over wavelength to an ideal single layer coating. The net external cavity feedback is also determined. An estimate of the accuracy of the reflectivity measurement is made     

Closed form theory of multicavity reflectors and the output power of external cavity diode lasers

A closed form solution for the transmission and reflection coefficients of a double cavity Fabry-Perot resonator is given. The explicit expressions for these coefficients are used in a formula to give the output power of diode lasers coupled to multiple external cavities. Analysis of a cleaved or etched coupled-cavity laser shows that stable operation depends on proper choice of the phase length of both the gap and the control section. A study of a diode laser coupled to an external waveguide containing a Bragg reflector shows that for correct choice of grating reflectivity only modestly effective antireflection coatings (5 percent on laser facet and 2 percent on waveguide face) are required to allow the grating to dominate the operating wavelength of the laser diode. A single external cavity with loss coupled to a laser diode is also considered. In this case the theory indicates the necessity of proper control of loss or coupling fraction between diode and cavity for there to be effective control of wavelength.     

二极管泵浦Nd∶YVO_4倍频激光器使用的光学薄膜

讨论了二极管泵浦 Nd∶ YVO4 激光器中使用的一系列光学薄膜 ,膜系类型涉及截止滤光片、增透膜等。根据设计对称匹配膜层的分析 ,利用计算机膜系设计优化软件对膜系进行优化 ,得到损耗小、利于制备、重复性好的膜系设计。用于实际制备 ,取得较好的效果     

实现外腔半导体激光器连续调谐的两个基本要求

定量讨论了实现外腔式半导体激光器连续调谐的两个基本要求:同时改变外腔长度及光栅反射波长,半导体激光器(LD)端面镀减反膜。分析表明:前人给出外腔的可调整范围并非是实现最大调谐范围的必要条件,而是实现调谐连续性的一种可行选择。针对具体的减反射膜,对在ECLD上可能实现的连续调谐范围进行了研究。     

High-power single longitudinal mode operation of twin-channel substrate mesa guide (TCSM) lasers

Improved TCSM lasers with antireflection coatings have been developed that operate in a stable zero-order mode to output powers of 80 mW CW. The devices operated in a stable single longitudinal mode to powers >65 mW. This is believed to be the highest single-mode power ever reported from an individual diode laser.     

Broad-band tunable two-section laser diode with external gratingfeedback

A tunable laser light source consisting of a two-section laser diode and an external grating is discussed. A wide tunable range of 154 nm was realized by improving the antireflection (AR) coating and the coupling efficiency. At both edges of the tunable range, however, the tuning characteristics were strongly influenced by the internal mode, in spite of the high-quality AR coating. The effects of the internal mode were avoided by using a phase-control section of the laser. Consequently, single-mode oscillation can be obtained at any desirable wavelength within the above tunable range by controlling the current injected into the phase-control section     

光栅调谐外腔半导体激光器特性

用一端面镀制高效减反射膜的激光二极管（实际已变成超辐射发光二极管），作为外腔中的增益介质与衍射光栅一道构造了光栅调谐外腔半导体激光器，并对其特性进行了分析和实验研究，实现了外腔半导体激光器的宽带调谐单模输出，调谐范围宽达４０ｎｍ，测定了阈值电流和调谐波长的关系。     

Broadly wavelength-tunable external cavity lasers with extremely low power variation over tuning range

Tunable external-cavity lasers with low power variation over a broad tuning range are demonstrated using asymmetric multiple quantum-wells with a wide and flat gain. For a 2.8-/spl mu/m-wide ridge waveguide laser of cavity length 380 /spl mu/m, when used in a grating external cavity and with an antireflection coating on one facet of laser diode chip, the power variation of less than -1 dB is obtained over a range of 80 nm. This extremely low power variation is a direct result of the spectrally flat gain.     

Real-time in situ monitoring of antireflection coatings forsemiconductor laser amplifiers by ellipsometry

Very strict requirements need to be met for producing a high-quality single-layer antireflection coating on a traveling-wave laser amplifier facet. In order to obtain a facet reflectivity of 10^-4 or less, the index of refraction and the layer thickness of single-layer coatings have to be controlled to better than 0.03 and 30 Å, respectively. An innovative approach to highly controlled antireflection layer deposition based on in situ real-time ellipsometry is presented. Index control within ±0.01 and a facet reflectivity on the order of 10^-4 are reproducibly obtained     

LD泵浦全固体激光器用光学薄膜的研究进展

介绍了二极管泵浦固体激光器（DPSSL）使用的一系列光学薄膜。由于DPSSL的泵浦波长与输出波长不同，泵浦方式、腔型结构及使用的激光材料种类繁多，因此所涉及的薄膜类型也多种多样，包括许多新型截止滤光片、增透膜、高反膜和偏振膜等。分析了此类薄膜元件设计和制备中的关键技术难题，同时对该领域国内外的研究现状进行了报道。     

355 nm增透膜的设计、制备与性能

用热舟蒸发法结合修正挡板技术制备了355 nm LaF3/MgF2增透膜,并对部分样品进行了真空退火.采用Lambda 900光谱仪测试了增透膜的低反光谱和透射光谱,并考察了其光谱稳定性;使用脉冲8 ns的355 nm激光测试了增透膜的激光损伤阈值(LIDT);采用Normarski显微镜对增透膜的表面缺陷密度和破斑形貌进行了观察.实验结果表明,制备得到的增透膜的剩余反射率较低,光谱稳定性好;真空退火对增透膜的激光损伤阈值没有改善;增透膜的破环形貌为散点形式,结合破斑深度测试表明薄膜的破坏源于薄膜和基底界面的缺陷点.JGSl熔石英基底由于有好的表面状况、固有的高激光损伤阈值和以其为基底的增透膜具有更低的表面场强,使得其上的增透膜有更高的抗激光损伤能力.     

空间高效硅太阳电池减反射膜设计与数值分析

结合AM0太阳光谱特性对空间硅太阳电池的减反射膜进行了设计分析,得到了最小反射时的最佳膜厚.分别讨论了单、双、三层减反射膜厚度变化对反射率的影响,并对有钝化层的Si O2 (94 nm) / Ti O2 (6 0 nm)双层减反射膜进行了优化设计,优化后硅太阳电池的短路电流和效率分别提高了2 .1%和1.4 % .     

Ultrashort pulses in diffraction-limited beam from diode laser arrays with external cavity

Picosecond pulses are generated in a diffraction-limited beam from passive (hybrid) modelocked conventional ( lambda =0.8 mu m) diode laser arrays in an external cavity. The emitted energy (10-20 pJ) is almost one order of magnitude higher than that obtained from single stripe quantum well lasers at similar pulse durations. The shortest pulses ( approximately 3 ps, 3 nm spectral width) are obtained with strong saturable absorbers and 1% antireflection coatings. Correspondingly, external cavities with relatively low angular selectivity can be used in these conditions.<>     

光栅反馈频率可调谐扩展腔半导体激光器

为了实现半导体激光器在795nm处的单模输出,采用输出端面镀有增透膜的半导体激光二极管作光源,用光栅反馈的方法构成扩展腔,研制了波长为795nm、频率可调谐半导体激光器,并对该激光器进行了实验测试,可知其频率连续调谐范围约7.6GHz,激光线宽约为2.5MHz,运行在110mA时输出功率达43mW。结果表明,该半导体激光器可用于激光与铷原子相互作用中的量子相干效应的研究。     

Effect of antireflection coatings and coverglasses on silicon solar cell performance

The high reflectivity of the polished silicon surface of the newer N⁺/P silicon solar cells has emphasized the need for properly designed antireflection coatings to obtain improved solar cell performance. The problem is complicated by the facts that solar cells are generally tested in air, but are for their final application covered with a glass or quartz slide which is adhesive-bonded to the cell surface, and further, that solar cells operating in a nuclear particle radiation environment change their spectral response and are frequently optimized for performance at the end of design-life. Experiments have been performed to explore the antireflection characteristics of thin films of silicon monoxide which have been evaporated on the solar cell surface. The effect of the antireflection coating thickness on cell response as a function of wavelength has been determined and the improvement in cell short circuit current for Air Mass Zero space sunlight evaluated. Included in this study was the evaluation of the antireflection characteristics after the application of a coverglass with adhesive over the antireflection coating. For comparison, coverglasses were also applied to bare cells with no antireflection coating present. In all cases the various coating comparisons were based on the cell short-circuit current performance in Air Mass Zero sunlight.     

Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON

We report a spectrum-sliced amplified spontaneous emission-injected wide-band gain laser covering a temperature range over 110/spl deg/C as well as entire 32 100-GHz-spaced channels (1533-1558 nm) in 155-Mb/s upstream transmissions over 25 km of single-mode fiber in a wavelength-division-multiplexed passive optical network. The wide-band gain laser diode employs asymmetric multiple quantum-well structure and low antireflection coating in order to widen the gain spectrum.     

用于高功率激光放大器的单层宽谱增透膜

为了获得用于高功率激光放大器的单层宽带增透膜,采用有机聚合物聚乙烯吡咯烷酮掺杂调控二氧化硅胶体生长制备了粒度分布更宽广的稳定胶体体系,通过提拉镀膜工艺,制备了单层增透膜。采用粒度仪和粘度仪监测胶体的性质,用分光光度计测量了膜层透过率,并用X射线能谱分析了膜层结构。结果表明,聚乙烯吡咯烷酮引入胶体中使得胶体粒度分布更宽,所得膜层具有折射率渐变特性,因而膜层具有宽带增透的效果;膜层在550nm~950nm连续波段内透射率不低于99%。单层宽谱增透膜层不需后处理就可投入使用,膜层性能稳定,满足了激光装置片状放大器的运行要求。     

不同应力增透膜对半导体激光器性能的影响

采用离子辅助电子束蒸发方法,通过改变制备Al2O3增透膜时基底的温度,在边发射半导体激光器前腔面上分别制备了张应力和压应力增透膜。比较了张应力、压应力两种不同增透膜对半导体激光器性能的影响。结果表明:在10A注入电流下,当半导体激光器的增透膜为张应力状态时,输出功率为8.11W;当半导体激光器的增透膜为压应力状态时,输出功率为7.74W。可见,在半导体激光器前腔面制备张应力增透膜有效地提高了半导体激光器的斜率效率。