横向尺寸的变化对SiGe HBT高频噪声的影响

从发射极条宽、发射极条长、基极条数、发射极与基极间距四个方面分析了横向尺寸变化对SiGe HBT高频噪声的影响.结果表明增加发射极条长、基极条数和减小发射极与基极间距可以较为有效地减小晶体管噪声,而减小发射极与基极间距对噪声的改善效果比较显著.发射极与基极间距从1μm减小到0.5μm,2GHz工作频率下最小噪声系数可减小9dB,在0.5GHz工作频率下最小噪声系数可降至1.5dB,2GHz工作频率下最小噪声系数为3dB.     

100pA～1μA量程的微弱电流源研制

为了实现对微弱测量仪器进行测试与校准,根据恒流源电路的思想,研制了一种由运算放大器构成的微弱电流源。在微弱电流产生中,利用恒压源和高精度标准电阻,通过V-I变换来实现微弱电流的输出;设计反馈调节网络,来解决普通电流源实现微弱电流输出易受负载影响的缺点,消除负载对输出电流的影响,同时,实现100pA～1μA量程的微弱电流输出。为提高电流源的性能,电路中采取了屏蔽和滤波处理,来解决噪声的影响。经过测试,结果表明该电路的电流范围在100pA～1 μA之间,电流源稳定可靠。在1nA时,误差不超过0.08nA。     

插接式真空灭弧室电弧形态的试验研究

为了解决传统对接式真空负荷开关在大容量发电机出口负荷开关开发过程中存在无法满足大负荷电流的瓶颈问题,基于插接式触头结构的真空灭弧室具有承载大负荷电流的优势,使其成为发电机出口端真空负荷开关设计的一种优选方案.同时,通过引入横向磁场对插接式触头结构进行了改进,改进后的真空灭弧室经过试验验证也具有了开断大负荷电流的能力.在小电流情况下(I＜2 kA),插接式电极结构真空电弧特性的试验研究发现阴极斑点或者仅在单一触指上分布,或者在各个触指之间跨越同时并联存在.当阴极斑点在单一触指上分布时,一部分阴极斑点在触指开槽处成群聚集静止不动,另一部分阴极斑点沿着S型轨迹在该触指表面边缘运动;当阴极斑点从一个触指向相邻触指跨越过程中,原来触指上的阴极斑点并不熄灭而是同时并联存在.     

硼酸酯改性Mg2B2O5W/PP复合材料界面及其力学性能

为了提高聚丙烯(PP)的强韧性能,采用熔融共混法分别制备了质量分数为0～15%的Mg2B2O5晶须(MBOw)和硼酸酯偶联剂(BE)改性MBOw填充PP基复合材料,测试了PP及其复合材料的拉伸、冲击性能,并通过红外光谱、接触角测试、扫描电镜分析等对复合材料界面作用机理进行了研究.结果表明:MBOw与BE之间存在化学和物理吸附层;PP与BE处理前后的MBOw之间不存在化学键合;BE改性MBOw/PP复合材料中PP与MBOw之间的粘附功和表面张力之比由BE表面处理前的8.7增至处理后的315.0,明显改善了基体中MBOw的分散性及其界面结合性能,提高了BE改性MBOw/PP复合材料的拉伸及冲击性能.     

月尘环境下太阳入射角对太阳能电池输出特性影响研究

在月表环境中,月尘沉降在太阳能电池表面会改变太阳能电池的输出特性,降低太阳能电池效率和使用寿命.通过理论分析建立了模型,计算得到了太阳能电池输出参数与太阳光入射角度之间的关系;搭建了测试平台,测量了不同入射光角度(0～90°)下太阳能电池输出特性,得到了太阳能电池短路电流、开路电压和转化效率等参数随太阳光入射角的变化曲...     

虚拟动态信号测试仪的实现与应用

利用虚拟仪器的概念和 FFT技术 ,以 PC机和通用的 D/ A、A/ D转换及数字I/ 0卡作为仪器硬件 ,开发出满足一般控制系统分析使用的动态范围 0 .1～ 2 0 0 0 Hz的虚拟动态信号测试仪器 ,并给出了利用该仪器对实际控制系统的测试结果。     

综合电参量测试仪在谐波测试中的应用

根据谐波电流测试标准以及谐波电流测试仪标准的要求,设计一款综合电参量测试仪.该仪器作为电磁兼容测试的辅助仪器,可以有效降低测量结果的不确定度,并且改善谐波电流测试仪综合性能.通过该仪器在谐波电流测试中的实际应用,对谐波电流测试数据的深入分析,发现在标准的相关条款中存在一些与实际测试结果不相符合的情况,并给出两条对谐波标准的修改建议.     

钒酸锰负极材料的制备及其性能

本研究通过流变相反应-热解法制备了碳包覆钒酸锰锂离子电池负极材料,通过XRD、TEM和电化学测试对材料进行了表征.所制备的材料微观组织呈不规则的短圆柱形和球形,其直径分布在30～50 nm之间,短圆柱形颗粒长度在200 nm左右.在充放电电压为3.0 V到0.02 V范围内,当充放电电流为0.1 A/g时,钒酸锰负极材料首次可逆充电容量为876 mAh/g,经过100次充放电循环后,可逆充电容量为843 mAh/g;以2.0 A/g的大电流充放电时,可逆充电容量仍然保持在334 mAh/g左右,表现出较优秀的大电流充放电能力.     

外加磁场对应变RTD电流负阻“平台”的抑制作用

本文在实验上观察到GaAs/A1As/InGaAs应变共振隧穿二极管(RTD)在电流负阻区出现一段"平台"现象,该现象来源于发射极子能级和量子阱子能级之间的相互耦合.在外加磁场的作用下,它们之间的耦合得到抑制,在一定的磁场下,负阻"平台"现象消失.此外,峰值电流随磁场增加而减小,导致峰谷电流比下降,同时峰值电压也发生相应的变化.     

短路试验电流光纤测量技术研究

针对交、直流开关电器短路试验电流校准问题,提出光纤短路电流测量方法。建立了光纤电流传感器低频动态模型,通过时域、频域特性仿真确定了闭环检测系统的参数,并计算了传感器对直流和工频短路电流的响应,结果表明传感器的动态性能能够满足跟踪被测短路电流的要求。搭建了光纤电流传感器校准装置,校准结果表明:在直流5～300 kA、工频5～50 kA范围内,传感器样机的测量准确度优于0.2%。利用光纤电流传感器进行短路电流实验测试,并与目前普遍使用的分流器和罗氏线圈比较,结果表明:对于6～100 kA的直流短路电流,分流器与光纤电流传感器之间的相对误差小于0.3%;对于10～130 kA的工频短路电流,罗氏线圈与光纤电流传感器之间的相对误差不超过0.2%。研究工作为短路试验电流的测量提供了新的解决途径。     

AlGaInP/GaAs异质结双极晶体管直流特性研究

制备了大尺寸AlGaInP／GaAs SHBT和DHBT，对其直流特性进行了测试，并分析了AlGaInP／GaA。单异质结晶体管(SHBT)和双异质结晶体管(DHBT)的直流特性差异，深入研究了影响AlGaInP／GaAsHBT开启电压(Voffset)的各个因素。结果表明：AlGaInP／GaAsHBT开启电压与外加基极电流密切相关，采用宽发射区可大大降低器件的开启电压。     

改善多指功率SiGe HBTs热稳定性的版图设计

提出非均匀指间距结构功率SiGe HBTs的版图设计用以改善热稳定性。模拟和实验结果均表明,与传统的均匀指间距结构相比,非均匀指间距结构HBT的峰值结温和温度分布非均匀性均得到显著改善。上述改善归功于非均匀指间距结构HBT中心指间距的增加,从而有效阻止热流由外侧指流向中心指处。此外,与均匀指间距结构器件相比,其热阻改善13.71%,热退化功率水平提高22.8%。因此,模拟和实验均证明采用非均匀指间距结构HBT的版图设计可有效改善功率HBTs热稳定性。     

Non-selective growth of SiGe heterojunction bipolar trasistor layers at 700 °C with dual control of n- and p-type dopant profiles

This paper describes the growth of the collector, base, and emitter layers of a SiGe HBT in a single epitaxy process. A non-selective SiGe heterojunction bipolar transistor growth process at 700 °C has been developed, which combines n-type doping for the Si collector, p-type doping for the SiGe base and n-type doping for the Si emitter cap. Control of the collector doping concentration by varying the growth conditions is shown. The boron tailing edge from the SiGe base into the Si emitter layer was removed by interrupting the growth process with a hydrogen flow after the SiGe base growth but before the Si emitter growth to remove the dopant gas from the chamber. The layer thicknesses are compared using three different analytical techniques–secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM), and spectroellipsometry. A good agreement was obtained for the three different methods.     

Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped pGaAs base layers

In this work we have examined the effect of RF annealing (450–750°C, 5–30 min) upon both InGaP/GaAs-based hetero-junction bipolar transistor (HBT) structures, fabricated by metalorganic vapour phase epitaxy (MOVPE), as well as thick carbon (C)-doped p⁺GaAs HBT base layers with varying layer thickness, dopant level and type (intrinsic and extrinsic C precursors) and co-doping (In) strain compensation. Anneal-induced changes in the p⁺GaAs layer lattice strain, Hall carrier concentration and mobility were compared with non-radiative losses, determined from photoluminescence (PL) intensity data. Majority and minority carrier property differences were also compared with IR reflection, Raman backscattering and photoreflectance (PR) data and correlated with changes in MOVPE hydrogen background concentration as determined by secondary-ion-mass-spectroscopy (SIMS). Thick base layer (1.3 μm) HBT structures were also examined for different anneal temperatures and time, showing significant changes in the PR emitter(InGaP)/base (p⁺GaAs) and base/collector (n-GaAs) interface regions for the 650°C anneal condition, as correlated with both PL and SIMS hydrogen concentration data.     

Bias-dependent conductive characteristics of individual GeSi quantum dots studied by conductive atomic force microscopy

The bias-dependent electrical characteristics of individual self-assembled GeSi quantum dots (QDs) are investigated by conductive atomic force microscopy. The results reveal that the conductive characteristics of QDs are strongly influenced by the applied bias. At low (-0.5 to - 2.0 V) and high (-2.5 to - 4.0 V) biases, the current distributions of individual GeSi QDs exhibit ring-like and disc-like characteristics respectively. The current of the QD's central part increases more quickly than that of the other parts as the bias magnitude increases. Histograms of the magnitude of the current on a number of QDs exhibit the same single-peak feature at low biases, and double- or three-peak features at high biases, where additional peaks appear at large-current locations. On the other hand, histograms of the magnitude of the current on the wetting layers exhibit the same single-peak feature for all biases. This indicates the conductive mechanism is significantly different for QDs and wetting layers. While the small-current peak of QDs can be attributed to the Fowler-Nordheim tunneling model at low biases and the Schottky emission model at high biases respectively, the large-current peak(s) may be attributed to the discrete energy levels of QDs. The results suggest the conductive mechanisms of GeSi QDs can be regulated by the applied bias.     

Recent progress in GeSi electro-absorption modulators

Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz–Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic.     

Electron emission properties of CNT arrays grown with micro-molding in capillary (MIMIC) assisted process

We have selectively fabricated carbon nanotubes (CNTs) emitter arrays with a micro mold in capillary (MIMIC) assisted process. The electron emitter growth site was fabricated by resist patterning using the MIMIC process. The pattern was uniformly transferred to the substrate and well aligned CNTs were grown. The emitter produces a turn-on field of 2.7 V/μm with a field emission current of 10 μA/cm². The electron emission current can be controlled by emitter pattern width and pitch variation.     

Si/SiGe异质结双极晶体管的研制

通过理论分析计算，计算机模拟和工艺实验，对Si/SiGe异质结双极晶体管（HBT）的结构参数进行了精细的优化设计，特别是采用了本征间隔层和新颖的Ge分布曲线，有效地削弱了基区杂质外扩散，基区复合和异质结势垒效应的不利影响。开发了兼容于硅工艺的锗硅HBT工艺，并据此试制出了Si/SiGeHBT，测量结果表明，器件的直流和交流特性均较好，电流放大系数为50，截止频率fT为5.1GHz。     

Electrospray ionization with a pointed carbon fiber emitter

A new type of electrospray ionization emitter employing a pointed carbon fiber has been developed for interfacing nanoliquid sampling techniques to mass spectrometry. The pointed carbon fiber protruding from an orifice with a surrounding hydrophobic surface confines a small Taylor cone at the tip, which generates a stable electrospray at the tip point. The small Taylor cone improves the electrospray efficiency thereby enhancing the detection limit. This emitter is rugged and able to generate stable electrospray over a wide range of flow rate, ESI voltage, and surface tension variation. Using a solution of angiotensin I, the carbon fiber emitter in 75-microm-i.d. fused-silica tubing was shown to give ion current comparable to that from a commercial 8 microm orifice nanospray emitter. Use of the emitter for ESI-MS/MS analysis of peptides was examined by infusing a mixture of cytochrome c and myoglobin tryptic digest peptides. Protein identification was demonstrated at the level of less than 1 fmol of the peptide consumed. The use of the carbon fiber emitter for interfacing monolithic capillary HPLC to MS was also demonstrated.     

Electrical Performance of Electron Irradiated SiGe HBT and Si BJT

The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gain β decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well as /? decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation of β for both SiGe HBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.