Multiwavelength array of single-frequency stabilized Fabry-Perot lasers

We characterize the influence of controlled perturbations (slots) in the ridge waveguide of Fabry-Perot lasers emitting around 1550 nm. The slots are etched simultaneously with the ridge and each slot introduces an additional loss of 2.3 cm/sup -1/. The lasers emit with a single wavelength when more than three slots are introduced, in which case the interslot spacing strongly influences the lasing spectrum. An array of devices with differing slot arrangements are fabricated on a single chip where each laser emits at a single wavelength across a 30-nm band each with side-mode suppression ratios greater than 28 dB. The emission wavelengths are simulated with a model for lossy slots where each slot has an effective in-phase reflectivity of 0.7%.     

Theoretical analysis of longitudinal mode coupling in external cavity semiconductor lasers

The single longitudinal mode behavior in long external cavity semiconductor lasers is discussed. Experimentally, the laser exhibits a single frequency oscillation even for an external cavity length of 100 cm. The mode selectivity of a composite cavity is shown to be insufficient to explain the experiments. Longitudinal mode coupling in semiconductor lasers is found to arise from an interference effect between the modes on the interband transition probability of electrons. Mode coupling equations are derived, which indicates that the single mode oscillation in long external cavity semiconductor lasers is brought about when the coupling strength goes beyond a critical value. It is shown that the effect of the hole burning in the external cavity semiconductor lasers is similar to that in the solitary laser.     

A General Equivalent Circuit for Coupled-Cavity Slow-Wave Structures

A number of structures of the slot-coupled cavity chain type are used in high-power traveling-wave tubes. In these, different relationships between the structure pass bands and the cavity and slot resonances are found to exist. By the construction of equivalent circuits which have patterns of current flow similar to those in the real structures, this behavior is calculated and the importance of the partial nature of the coupling and the relative alignment of the slots is illustrated. It is possible to obtain from the circuits presented a qualitative understanding of the general behavior of structures of this type.     

线极化波和圆极化波与腔体的耦合比较

线极化波与腔体的耦舍效果受腔体上窄缝方向的影响很大,而圆极化波与腔体的耦合对窄缝方向的依赖比较小。利用时域有限差分法,采用相同振幅的线极化波和圆极化波入射,分别计算它们与开有单缝和T形缝隙的屏蔽腔体的孔缝耦合效应。比较两种极化形式的波入射时,耦合到腔体内部功率密度最大值随极化方向的变化关系,从而得出结论：同幅度的圆极化波比线极化波更容易耦合进入腔体,并不易受缝隙形状影响。     

DBR单纵模光纤激光器波长温度调谐

报道了采用DBR方式,利用8 mm的高浓度掺Yb3+单模光纤,实现了波长为1 064 nm的单纵模调谐激光稳定输出的实验结果。该DBR谐振腔有效腔长为16 mm,输出最大功率为7.4 mW,通过半导体制冷器温控改变谐振腔的温度,实现了0.824 nm的单纵模无跳模调谐。采用光纤外差法,并利用低损耗环形器和光纤反射镜倍增延迟线长度提升测量精度的方式,测量得到激光最大线宽为4.4 kHz。单纵模激光的弛豫震荡峰位于900 kHz处,其相对强度噪声为-110 dB/Hz,当频率大于1.5 MHz时相对强度噪声为-145 dB/Hz。     

湿度传感器圆柱谐振腔辐射量的研究

作为汽轮机里湿度传感器的圆柱谐振腔,以 TE011模式工作。为了实时取样所测气体,在圆柱腔两个端面不同位置开多个圆环缝隙,产生了电磁场向外辐射,影响谐振腔的谐振特性及电磁环境。为了减少电磁辐射,研究电磁场从圆柱形谐振腔两端的圆环缝隙辐射的情况,谐振腔圆环缝隙的电磁场采用电磁场等价定理、边值条件及汉克尔变换,通过模式匹配推导缝隙结构的电磁场分布,给出了随不同开缝数量、位置、宽度及圆环厚度等结构参数的辐射情况。采用 MATLAB 数值计算圆环缝隙的辐射量;采用 HFSS 仿真圆环缝隙圆柱谐振腔,得到了圆环缝隙辐射量,仿真结果验证了理论方法的正确性。同时,给出了带有圆环缝隙的圆柱谐振腔作为湿度传感器的最佳结构参数。     

10Gbit/s高T0无制冷分布反馈激光器

与折射率耦合分布的分布反馈（DFB）激光器相比,不管界面反射率是多少,增益耦合DFB激光器都能稳定地单纵模工作,而且具有高速、低啁啾的特性．本课题组用AlGaInAs/InP材料,采用增益耦合DFB结构,进行了单纵模激光器研发,并对器件特性进行了测试分析．     

Littrow型光栅外腔半导体激光器的输出特性分析

在讨论光栅外腔半导体激光器理论的基础上.对影响Littrow型光栅外腔半导体激光器输出功率和线宽压窄的各种因素进行了数值模拟分析.研制了单纵模高质量激光输出的Littrow型光栅外腔半导体激光器,在工作电流为400 mA时,连续输出功率达到180 mW,线宽优于1 MHz.     

Critical design parameters for engineering broadly tunableasymmetric multiple-quantum-well lasers

Asymmetric multiple-quantum-well (AMQW) lasers are MQW lasers with QW's of varying thickness and/or composition in a single active region. AMQW lasers can, if designed properly, exhibit broad spectral tuning ranges more than twice as large as those of conventional MQW lasers. In the paper, it is shown experimentally and theoretically that AMQW lasers only exhibit broad wavelength tuning ranges near a specific cavity length defined as the transition cavity length. The transition cavity length is a critical design parameter for engineering broadly tunable AMQW Lasers     

Single transverse-mode filtering utilizing ion implantation: application to 1.48-/spl mu/m unstable-cavity lasers

We demonstrate the relevance of ion implantation of the multiple quantum-well active layer in unstable-cavity lasers as a means of efficiently filtering the parasitic higher order waves by introducing additional propagation loss within the cavity. Several H/sup +/ implantation schemes are proposed and a comparison is successfully made of experiment to a beam propagation method (BPM) model on the basis of modal behavior. The work finally resulted in improved single transverse-mode behavior of those lasers: more than 1.3 W CW of diffraction-limited power at 1.48 /spl mu/m was then obtained utilizing a two-step implantation process.     

Numerical and experimental corroboration of an FDTD thin-slot modelfor slots near corners of shielding enclosures

Simple design maxims to restrict slot dimensions in enclosure designs below a half-wave length are not always adequate for minimizing electromagnetic interference (EMI). Complex interactions between cavity modes, sources, and slots can result in appreciable radiation through nonresonant length slots. The finite-difference time domain (FDTD) method can be employed to pursue these issues with adequate modeling of thin slots. Subcellular FDTD algorithms for modeling thin slots in conductors have previously been developed. One algorithm based on a quasistatic approximation has been shown to agree well with experimental results for thin slots in planes. This FDTD thin-slot algorithm is compared herein with two-dimensional (2-D) moment method results for thin slots near corners and plane wave excitation. FDTD simulations are also compared with measurements for slots near an edge of a cavity with an internal source     

Stable operating region in a harmonically actively mode-locked fiber laser

We theoretically study the recovery of a harmonically actively mode-locked soliton fiber laser from pulse dropout. In such lasers, a large number of pulses propagate simultaneously in the cavity. In order to obtain stable operation, pulses that are dropped due to changes in environmental conditions should recover, while other pulses that propagate in the cavity should remain stable. Soliton perturbation theory is used to find stability conditions for the noise in a time slot where a steady state pulse exists and in a time slot where a pulse is dropped. In the stable operating region of the laser, noise is stable in the presence of a pulse while noise becomes unstable in time slots where a pulse is dropped. Such a stability condition ensures that the laser can recover from accidental pulse dropout. A good agreement between the results of a reduced model and the results of a comprehensive numerical simulation was obtained. The results of this paper may enable to improve the stability of actively mode-locked fiber lasers.     

Chirp compensation in mode-locked DFB laser diodes with extendedcavity

The spectro-temporal behavior of actively mode-locked fiber-external-cavity DFB lasers at 1.55 μm is analyzed in detail. Experiments are performed with multiquantum-well InGaAsP lasers of different lengths and different phase-amplitude coupling factors. Transform-limited picosecond pulses are generated with pulsewidth adjustable over half a decade by changing the RF conditions and the device length. As in the case of conventional laser diodes with external grating, the smallest time-bandwidth products are obtained for modulation frequencies to the high-frequency side of the mode-locking band. This result is presently described in terms of chirp compensation by the DFB cavity dispersion. An analytical expression of the pulse compressibility is established from a steady-state mode-locking equation including refractive index variations and cavity dispersion effects. Gain parameters entering the expression are separately evaluated from standard rate equations. A good agreement is found between experimental and theoretical results     

Ultrafast harmonic mode-locking of monolithic compound-cavity laserdiodes incorporating photonic-bandgap reflectors

We present the first demonstration of reproducible harmonic mode-locked operation from a novel design of monolithic semiconductor laser comprising a compound cavity formed by a I-D photonic-bandgap (PBG) mirror. Mode-locking (ML) is achieved at a harmonic of the fundamental round-trip frequency with pulse repetition rates from 131 GHz up to a record high frequency of 2.1 THz. The devices are fabricated from GaAs-AlGaAs material emitting at a wavelength of 860 nm and incorporate two gain sections with an etched PBG reflector between them, and a saturable absorber section. Autocorrelation studies are reported which allow the device behavior for different ML frequencies, compound cavity ratios, and type and number of intra-cavity reflectors to be analyzed. The highly reflective PBG microstructures are shown to be essential for subharmonic-free ML operation of the high-frequency devices. We have also demonstrated that the single PBG reflector can be replaced by two separate features with lower optical loss. These lasers may rind applications in terahertz imaging, medicine, ultrafast optical links, and atmospheric sensing     

Thermal characteristics of deep red (0.77 μm) vertical-cavitysurface-emitting lasers

Spectra have been obtained as a function of current for room temperature operation of deep red (0.77 μm) top-surface-emitting vertical-cavity-surface emitting lasers. From these spectra, the shift from single mode to multimode operation and the temperature rise from below threshold until thermal quenching are determined. By comparison with the wavelength at threshold for vertical cavity lasers with in-plane edge emitting lasers, the mismatch of the Fabry-Perot and gain peak is determined. This mismatch results in the minimum threshold current for the vertical-cavity lasers to occur considerably below room temperature     

Single mode, short cavity, Pb-salt diode lasers operating in the 5, 10, and 30 µm spectral regions

Pb-salt diode lasers are being used as frequency-tunable infrared sources in high resolution spectroscopy and heterodyne detection applications. Recent advances in short-cavity, stripe geometry laser configurations have led to significant increases in maximum CW operating temperature, single mode operation, and increased single mode tuning range. This paper describes short cavity, stripe geometry lasers operating in the 5, 10, and 30 μm spectral regions, with single mode tuning ranges of over 6 cm^-1.     

Mounting of high power laser diodes on boron nitride heat sinksusing an optimized Au/Sn metallurgy

High power diode lasers have become more and more important to industrial and medical applications. In contrast to low power applications, long cavity lasers or laser bars are used in this field and mounting quality influences considerably laser performance and life time. In this paper we focus on the solder metallurgy and stress-induced laser behavior after mounting. The laser chips have been bonded fluxless epi-side down on translucent cubic boron nitride (T-cBN) using Au/Sn solder. The laser behavior has been tested with different chip metallizations preserving the eutectic solder composition or forming the Au rich ζ-phase during reflow. The resulting additional stress in the lasing region has been independently indicated by polarization measurements of the emitted light. A metallization scheme has been developed which forms the highly melting ζ-phase during soldering within a wide process window. This procedure yields better results then using eutectic Au/Sn which has a higher hardness than the ζ-phase. Laser diodes up to a cavity length of 2000 μm and an aperture of 200 μm have successfully been mounted on T-cBN. State of the art laser data, excellent thermal stability, high yield and reliability have been obtained     

1.1-W continuous-wave 1480-nm semiconductor lasers with distributedelectrodes for mode shaping

Diffraction-limited high-power devices may suffer from self-focusing effects due to nonuniform gain saturation. In this letter, we propose the concept of the distributed electrode, which allows one to improve the modal behavior of these lasers and to reduce spatial-hole burning effects by preferentially localizing current injection in the center of the structure, therefore shaping the optical mode. Utilizing this concept, we have realized unstable cavity lasers exhibiting single-lobe far-field patterns. We report the first realization of flared unstable cavity lasers emitting at 1480 mm with maximum output powers up to 1.1-W continuous-wave and external efficiencies as high as 0.45 W/A     

Dynamic, polarization, and transverse mode characteristics ofvertical cavity surface emitting lasers

The dynamic, polarization, and transverse mode characteristics of strained InGaAs-GaAs quantum well vertical cavity surface emitting lasers (VCSELs) emitting at 0.98 μm are investigated. The dynamic behavior of VCSELs with high and low operating voltages and series resistances is compared. A large wavelength chirp in the lasing spectrum was observed for the lasers with high voltage/resistance, even under low-duty-cycle pulse operation. This is thought to be due to resistive heating close to the laser junction. It is observed that the transverse mode structure of VCSELs and their dependence on laser dimensions and drive current are highly analogous to those of edge emitting lasers, whereas the polarization characteristics of the two types of lasers are significantly different     

Rectangular Ring Lasers Based on Total Reflection Mirrors and Three Waveguide Couplers

Novel rectangular ring lasers containing active and passive sections are fabricated and characterized. The rectangular laser cavity is formed using four low-loss total internal reflection (TIR) mirrors and an output coupler made out of passive three coupled waveguides. The fabrication process is exactly the same as for other active and passive devices except for one deep etch step for TIR mirror fabrication. Two different lasers having active section lengths of 250 and 350 mum and total cavity lengths of 580 and 780 mum are fabricated. For both devices, lasing thresholds of 38mA are obtained at room temperature and under continuous-wave operation. Lasing is predominantly single-mode with a sidemode suppression ratio better than 20 dB. The power loss of a single TIR mirror is also determined to be about 0.5 dB. Such low-loss TIR mirrors enabled lasers with very small footprints