280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations

A single-ended amplifier using a single-die GaN-FET was successfully developed for W-CDMA cellular base-station systems. The developed amplifier delivers a peak saturated output power of 280 W with a linear gain of 12.6 dB at a drain voltage of 48 V under 2.15 GHz 3GPP W-CDMA signal input. It is believed that the 280 W output power is the record output power in single-ended amplifiers at 2 GHz band. A high drain efficiency of 29% is also obtained at 8 dB power back off from the saturated output power.     

Ka波段5W GaAs PHMET功率MMIC

报道了一款采用0.15μm GaAs功率MMIC工艺研制的Ka波段功率放大器芯片。芯片采用四级放大拓扑结构,在29～32GHz频带范围内6V工作条件下线性增益25dB,线性增益平坦度小于±0.75dB;饱和输出功率大于5W,饱和效率大于20%,功率增益大于22dB;1dB压缩点输出功率大于36.5dBm,效率大于18%。     

Ku波段宽带氮化镓功率放大器MMIC

基于0.25μm栅长GaN HEMT工艺,采用三级放大拓扑结构设计了一款Ku波段GaN功率放大器.放大器设计从建立大信号模型出发,输出匹配网络和级间匹配网络均采用电抗匹配减小电路的损耗,从而提高整体放大器的功率效率.测试结果表明,该放大器在14.6~18GHz频带内,小信号增益30dB,脉冲饱和输出功率达15W,功率附加效率(PAE)大于32%;在14.8GHz频点处,放大器的峰值功率达19.5W,PAE达39%.该结果表明GaN MMIC具有高频高功率高效率的优势,具有广阔的应用前景.     

S波段35W GaN功率MMIC

报道了一款采用两级拓扑结构的2～4 GHz宽带高功率单片微波功率放大器芯片.放大器采用了微带结构,并使用电抗匹配进行设计,重点在于宽带功率效率平坦化设计.经匹配优化后放大器在2～4 GHz整个频带内脉冲输出功率大于35 W,小信号增益达到22 dB,在2.4 GHz频点处峰值输出功率达到40 W,对应的功率附加效率为3...     

44 GHz waveguide-based power amplifier module using doubleantipodal finline transitions

A 44 GHz waveguide-based power amplifier module was developed using the double antipodal-finline transitions which also serve as a power combiner. The measured insertion loss of the proposed combiner was ~0.9 dB per transition around 44 GHz. The fabricated power amplifier module combining two 0.93 W monolithic microwave integrated circuit power amplifiers showed a saturated output power of 1.4 W with a high combining efficiency of 75% at 44 GHz     

A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 µm gate‐length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4‐inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of –6 dBm at 76.5 GHz with a conversion gain of ?16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W‐band.     

基于GaAs PHEMT工艺的60~90GHz功率放大器MMIC

研制了一款60~90 GHz功率放大器单片微波集成电路(MMIC),该MMIC采用平衡式放大结构,在较宽的频带内获得了平坦的增益、较高的输出功率及良好的输入输出驻波比(VSWR)。采用GaAs赝配高电子迁移率晶体管(PHEMT)标准工艺进行了流片,在片测试结果表明,在栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,功率放大器MMIC的小信号增益大于13 dB,在71~76 GHz和81~86 GHz典型应用频段,功率放大器的小信号增益均大于15 dB。载体测试结果表明,栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,该功率放大器MMIC饱和输出功率大于17.5 dBm,在71~76 GHz和81~86 GHz典型应用频段,其饱和输出功率可达到20 dBm。该功率放大器MMIC尺寸为5.25 mm×2.10 mm。     

A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz

A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37dBm was achieved, corresponding to a power density of 5.25W/mm. At 40-V drain bias, an output power of 38.7dBm is achieved at 50% PAE corresponding to a power density of 7.4W/mm.     

A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5/spl times/3 mm/sup 2/ yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at V/sub DS/=35V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology.     

6～18 GHz宽带GaN功率放大器MMIC

报道了一款采用三级拓扑结构的6～18 GHz宽带单片微波功率放大器芯片.放大器采用了微带结构,并使用电抗匹配进行设计,减小输出匹配电路的损耗和提高效率.经匹配优化后放大器在6～18 GHz整个频带内脉冲输出功率大于6 W,小信号增益达到25 dB,在14 GHz频点处峰值输出功率达到10 w,对应的功率附加效率为21%...     

High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs

A high-efficiency wideband code-division multiple-access (W-CDMA) base-station amplifier is presented using high-performance GaN heterostructure field-effect transistors to achieve high gain and efficiency with good linearity. For high efficiency, class J/E operation was employed, which can attain up to 80% efficiency over a wide range of input powers and power supply voltages. For nonconstant envelope input, the average efficiency is further increased by employing the envelope-tracking architecture using a wide-bandwidth high-efficiency envelope amplifier. The linearity of overall system is enhanced by digital pre-distortion. The measured average power-added efficiency of the amplifier is as high as 50.7% for a W-CDMA modulated signal with peak-to-average power ratio of 7.67 dB at an average output power of 37.2 W and gain of 10.0 dB. We believe that this corresponds to the best efficiency performance among reported base-station power amplifiers for W-CDMA. The measured error vector magnitude is as low as 1.74% with adjacent channel leakage ratio of -51.0 dBc at an offset frequency of 5 MHz     

基于GaN HEMT的高效率Doherty功率放大器设计

通过分析传统Doherty功放的负载调制网络存在的带宽限制和晶体管输出电容对于效率的影响问题。利用改善阻抗变换比和补偿载波功放晶体管的输出电容的方法提出一种新型负载调制网络,使用GaN HEMT晶体管并基于此网络设计完成了一款高效率的Doherty功率放大器。该Doherty功率放大器采用不等分结构设计。此外,采用阶跃式阻抗匹配方法设计主辅功放的输入输出匹配网络来拓展Doherty功放的工作带宽。测试结果显示,在2.8~3.2 GHz频段内,饱和输出功率达到45 dBm,饱和漏极效率65%~73.18%。功率回退6 dB时,漏极效率在45%~50%之间,功率回退9 dB时,漏极效率在38.94%~44.68%之间。     

A 4-9 GHz 10 W wideband power amplifier

A 4-9 GHz wideband high power amplifier is designed and fabricated, which has demonstrated saturated output power of 10 W covering 6-8 GHz band, and above 6 W over the other band. This PA module uses a bal-ance configuration, and presents power gain of 7.3 ± 0.9 dB over the whole 4-9 GHz band and 39% power-added efficiency (PAE) at 8 GHz. Both the input and output VSWR are also excellent, which are bellow -10 dB.     

1～4GHz 80W GaN超宽带功率放大器

基于南京电子器件研究所0.25μmGaN HEMT工艺平台,设计了一款工作频率为1~4GHz,连续波输出功率大于80W的超宽带功率放大器.放大器采用低通L-C匹配网络实现管芯输入输出阻抗到实阻抗的变换;并利用切比雪夫变换器结构实现超宽带匹配;以单路输入输出端口匹配到100Ω后,两路直接电路合成到50Ω的方法实现了大功率超宽带功放的功率合成.放大器偏置电压32V,静态电流0.4A.测试结果显示,在1~4GHz带宽内,放大器连续波输出功率大于49.05dBm （80.3W）,最高输出功率为50.6dBm （114.8W）,饱和功率增益大于9dB,功率平坦度小于±0.8dB,最大漏极效率为62.5%.     

fmax为100GHz的蓝宝石衬底AlGaN/GaN高电子迁移率晶体管

制作了蓝宝石衬底上生长的AlGaN/GaN高电子迁移率晶体管.0V栅压下,0.3μm栅长、100μm栅宽的器件的饱和漏电流密度为0.85A/mm,峰值跨导为225mS/mm;特征频率和最高振荡频率分别为45和100GHz;4GHz频率下输出功率密度和增益分别为1.8W/mm和9.5dB,8GHz频率下输出功率密度和增益分别为1.12W/mm和11.5dB.     

A 65 nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands

A fully-integrated dual-band dynamic reconfigurable differential power amplifier with high gain in 65 nm CMOS is presented. A switchable shunt LC network is proposed to implement the dual-band reconfigurable operation and achieve high gain at both low and high frequency bands, and the high quality on-chip transformers are utilized to implement input/output impedance matching and single-ended to differential conversion. Measured results show that the dual-band dynamic reconfigurable power amplifier can provide 23 dB gain at 2.15 GHz and 21 dB gain at 4.70 GHz, and achieve more than 19 dBm saturated output power at 2.15 GHz and 13 dBm saturated output power at 4.70 GHz, respectively. The die area is about 1.7 mm×2.0 mm.     

Pulsed 0.75kW output single-ended GaN-FET amplifier for L/S band applications

A pulsed 0.75 kW output GaN-FET amplifier for L/S band high power applications has been successfully developed. A single-ended configuration is adopted to make the amplifier compact and simple. The amplifier delivers a saturated output power of 0.75 kW under pulsed RF operation at 2.14 GHz, which is believed to be the highest output power reported in an L/S band single-packaged device     

An X-band high-efficiency MMIC power amplifier with 20-dBreturn losses

Describes the design principles and measured performance of an X-band high-efficiency monolithic-microwave-integrated-circuit (MMIC) power amplifier and discuss pertinent factors of the ion-implantation process. Also presented is a worst-case power prediction of the chip performance and a large-signal design using small-signal simulation. This balanced amplifier is fully monolithic with input and output return losses of better than 20 dB provided by Lange couplers. These return losses make it very convenient to cascade with other components. For high-efficiency operation, the drain voltage is 6 V. Across the 40% bandwidth from 8 to 12 GHz, the amplifier produces 1.6 to 2.1 W of output power at 33 to 40% power-added efficiency. For high-power operation, the drain voltage is 8.5 V. The amplifier can produce 2.4 to 2.8 W of output power at 26 to 29% power-added efficiency across the same 40% bandwidth     

基于EFJ模式的宽带高效率Doherty功率放大器设计

将EFJ模式功率放大器应用于Doherty功率放大器的载波功率放大器,利用EFJ类功率放大器的阻抗特性改善了Doherty功率放大器的带宽。此外,还引入后谐波控制网络来提高Doherty功率放大器的效率。功放的输入匹配电路采用阶跃式阻抗匹配来进一步拓展工作带宽。使用CGH40010F GaN 晶体管设计并加工完成了一款宽带高效率Doherty功率放大器。测试结果显示,在3.2~3.7GHz 频段内,饱和输出功率达到43dBm,饱和漏极效率60%~72.5%,增益大于10dB。功率回退6dB时,漏极效率40%~48.5%。     

基于复合左右手传输线结构的多频高效功放

提出一种多频高效功率放大器的设计方法。采用源牵引和负载牵引确定最佳源阻抗和负载阻抗,使用复合左右手传输线实现多频匹配并抑制二次谐波。仿真结果表明,放大器在0.9GHz、1.4GHz、2.1GHz三个频点均可输出10W功率,增益为13dB,且具有60%以上的工作效率。