Hg1-xMnxTe晶片电学参数的测量及分析

采用范德堡法分别在77K和室温下对多个Hg1-xMnxTe晶片的电学性能进行了测量,发现部分晶片在77K下的导电类型为p型,而在室温下却为n型.通过理论分析对此现象进行了解释.分析表明:Hg1-xMnxTe晶片中电子迁移率与空穴迁移率的比值较大和Hg1-xMnxTe的禁带较窄是造成晶片导电类型转变的主要原因.对所测其它电学参数的理论分析表明范德堡法不适合用于Hg1-xMnxTe晶片室温时的载流子浓度和迁移率的测量,但仍可用其对晶片室温时的电阻率和霍尔系数进行测量.     

移动加热器法晶体生长工艺的研究进展

移动加热器法被认为是一种切实可行的生长大尺寸、高质量单晶体的方法,它结合了液相外延和区熔提纯的优点.本文阐述了移动加热器法晶体生长的基本原理、优缺点,综述了相关加热方式、晶体生长过程中的质量输运和热交换,并探讨了工艺条件(如重力场、磁场、强迫对流等和晶体生长速率)对移动加热器法生长晶体过程与晶体质量的影响,最后对移动加热器法的发展趋势进行了展望.     

耐锌液侵蚀保护套管材料研究现状

对热镀锌内加热生产方法的特性进行了简述,从材料、制备工艺及性能角度综述了热镀锌内加热器保护套管用金属及合金材料、表面处理材料、无机材料的研究进展,并对碳化硅(SiC)复相陶瓷内加热器保护套管的研究方向提出了一些见解。     

柔性阻变存储材料与器件研究进展

物联网技术的飞速发展对柔性可穿戴电子设备提出了迫切需求,而作为电子设备不可或缺的部分,存储器势必也需要向柔性化的方向发展。阻变存储器具有高速、低功耗、非易失、结构简单、选材广泛等特性,被视为未来柔性存储器的重要候选器件之一。在应变条件下,阻变存储器的薄膜开裂无疑会导致器件性能失效。因此,近年来除研究应变对材料性质和器件性能的影响外,研究人员主要从选择合适的阻变材料和优化器件制备工艺方面不断尝试,取得了丰硕的成果,大幅提升了器件的柔韧性。为构建高性能的柔性阻变存储器,许多材料已被开发作为存储介质,包括无机、有机、有机-无机复合或杂化材料等。同时,金属、金属合金、碳/硅材料、氮化物、导电氧化物等已被尝试用作电极材料,聚酰亚胺(PI)、聚萘二甲酸乙二醇酯(PEN)、聚对苯二甲酸乙二醇酯(PET)、聚二甲基硅氧烷(PDMS)等也已被尝试用作柔性衬底。此外,器件的制备起初主要采用全气相法,条件相对苛刻,通常需要高真空甚至高温环境。近年来的研究工作将气相-液相混合甚至是全液相法引入到柔性阻变存储器的制备工艺中,初步实现了器件的简单、低温和快速制备。本文归纳了柔性阻变存储器的研究进展,分别对器件材料(存储介质、电极和衬底)和制备工艺及性能进行了全面介绍,分析了器件的失效机理,并对本领域当前存在的挑战与未来发展前景进行了讨论。     

Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3压电单晶的弛豫反常

对用改进的Bridgman法生长的Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3(PZNT91/9)单晶用Laue衍射法和XRD衍射曲线定向,取(001)晶片研究材料的电学性能.结果表明,材料的介电性能呈现出明显的频率色散现象,随着测试频率的升高,介电常数的峰值温度出现反常,峰的位置向低温方向移动.用扫描电子显微镜和正交偏光显微镜研究了PZNT91/9单晶的电畴结构,发现规则排列的带状畴与杂乱分布的细畴并存.X射线荧光分析结果表明,在PZNT91/9单晶中存在着由成分分凝引起的组分变化.成分分凝引起的组分波动和电畴结构的复杂性导致了材料性能的不均匀性,并与材料铁电相变的弥散性特征相关.     

紫外LED辅助的4H-SiC化学机械抛光

在4H-SiC晶片的化学机械抛光(CMP)体系中加入紫外LED系统,研究TiO_2颗粒、紫外LED光功率、抛光温度和抛光液pH值对4H-SiC晶片抛光性能的影响规律,以获得较高的材料去除速率(MRR)和原子级光滑表面,满足LED器件对衬底材料表面的严格要求.结果表明,采用平均粒径25 nm、质量分数为2%的TiO_2颗粒,可显著提高MRR,且减少微划痕等表面缺陷;增大紫外LED功率,MRR随之增大;升高抛光温度,MRR快速提高,并可降低抛光所得表面粗糙度;在CMP体系中加入紫外体系可增加羟基自由基数量,抛光液pH值较低(2.2)也可维持较高MRR值,且抛光液pH值超过10时MRR值大幅提高.采用原子力显微镜(AFM)、光学显微镜来考察4H-SiC晶片抛光后的表面质量.基于各因素的影响规律,最终获得表面粗糙度为0.058 6 nm的4H-SiC晶片表面,且MRR达到352.8 nm/h.     

铠装阴极加热材料及其性能研究

研完了一种用于电火箭的新型铠装阴极加热器材料的性能与制造技术。研究表明铠装鹄铼合金的阴极加热材料具有优良的电性能．是一种制造高可靠性电真空器件阴极加热器的理想材料。     

卤化物钙钛矿射线探测器材料研究进展

卤化物钙钛矿由于具有高射线吸收系数、高载流子迁移率寿命乘积、可低温溶液法生长等特性, 有望突破传统高纯锗和碲锌镉探测器在成本、芯片兼容性和大尺寸成像等方面的制约, 成为新一代性能优异的室温射线探测材料。本文从卤化物钙钛矿材料的基本性质与射线探测原理出发, 介绍了2015年以来卤化物钙钛矿射线探测材料与器件的发展历程; 系统介绍了直接型射线探测器(强度、成像、能谱)及闪烁体探测器的最新研究成果; 分析了材料特性与器件结构对射线探测器性能的影响机制, 为今后更高效的卤化物钙钛矿射线探测器的开发提供参考。     

铜基底上大尺寸石墨烯单晶的化学气相沉积法制备研究进展EI北大核心

石墨烯的优异性能使其有望应用于未来的电子和光电器件中,采用化学气相沉积法进行石墨烯薄膜的可控制备有助于其在高性能器件中的大规模应用。然而多晶结构石墨烯薄膜中的大量晶界阻碍了载流子的快速传输,损害了材料的电学性能。大尺寸石墨烯单晶的获得能够减少薄膜中的晶界缺陷、极大提升石墨烯薄膜的质量。本文综述了大尺寸石墨烯单晶在铜基底上的化学气相沉积法制备研究,主要包括石墨烯晶片形核密度控制及取向一致石墨烯晶片的无缝拼接两种方法。重点从基底处理、反应区碳源分压控制、氧辅助生长等方面阐述了石墨烯单晶生长的不同实现途径、原理和特点。最后,分析目前制备方法中存在的挑战,并展望大尺寸石墨烯单晶的未来发展方向。探究石墨烯单晶的生长机制及动力学有助于实现在不同环境生长的精确控制,批量化低成本工艺开发和在多元化目标基底上的原位制备是实现石墨烯单晶大范围应用的关键。     

固贴式薄膜体声波谐振器性能受压电材料的影响分析

利用Math CAD软件对固贴式薄膜体声波谐振器(SMR-FBAR)器件建立数学模型进行仿真,分析了不同压电薄膜材料和厚度,不同电极材料和厚度对FBAR器件谐振特性的影响。采用射频磁控溅射方法制备氮化铝(AlN)薄膜,利用扫描探针显微镜中的压电力显微镜(PFM)模块对AlN薄膜的压电性能进行了测试。得到主要结论为:复合FBAR的谐振频率因为增加了电极厚度因素相比理想FBAR的谐振频率偏低;压电材料的机电耦合系数对器件带宽起决定性作用,器件的机电耦合系数正比于材料的机电耦合系数;AlN具有较高的压电系数,可以有效提升器件性能,增大带宽,适合作为压电薄膜材料;采用小尺寸压电薄膜和电极厚度有益于提高器件的频率。     

Evaluation and selection of LiNbO(3) and LiTaO(3) substrates for SAW devices by the LFB ultrasonic material characterization system

This paper demonstrates the evaluation and selection of commercially available LiNbO(3) and LiTaO(3) single crystals and wafers for surface acoustic wave (SAW) devices using the line-focus-beam ultrasonic material characterization (LFB-UMC) system. This system enables measuring leaky-SAW (LSAW) propagation characteristics precisely and efficiently for a number of specimens. The wafers are prepared from the top, middle, and bottom parts of four 128 degrees YX LiNbO(3) and seven X-112 degrees Y LiTaO(3) single crystals. For both series of crystals, the measured LSAW velocities increase from top to bottom in the crystals and with the increasing crystal growth number. The velocity changes for all wafers are 0.036% for 128 degrees YX LiNbO(3) and 0.035% for X-112 degrees Y LiTaO(3), corresponding to changes of 0.038 mol% and 0.075 mol% in Li(2)O concentration, respectively. Moreover, the inhomogeneity in the first X-112 degrees Y LiTaO(3) single crystal caused by some undesirable wafer fabrication processes can be detected precisely, although it is difficult for the conventional methods to obtain such information.     

Growth of GaAs,GaxIn1−xSb and GaxAl1−xAs by the travelling heater method

Gallium arsenide crystals 1 cm in diameter and several cm long were grown by the travelling heater method (THM) in 〈111〉, 〈1?1?1?〉, 〈110〉 and 〈211〉 directions, with the best results obtained with the two 〈111〉 orientations. A solvent zone slightly shorter than the heater produced a convex interface, which aided grain selection and dislocation elimination. Characterization by mass spectrometry and Hall measurements showed that THM crystals were superior to the feed material from which they were grown. Some crystals were doped with Te, Zn or Cr. Polycrystalline ingots of Ga_xIn_1?x Sb and Ga_x Al_1?x As were also prepared by THM and their composition profiles measured. Constitutional supercooling was not a problem.     

Development of the line-focus-beam ultrasonic material characterization system

A line-focus-beam ultrasonic material characterization (LFB-UMC) system has been developed to evaluate large diameter crystals and wafers currently used in electronic devices. The system enables highly accurate detection of slight changes in the physical and chemical properties in and among specimens. Material characterization proceeds by measuring the propagation characteristics, viz., phase velocity and attenuation, of Rayleigh-type leaky surface acoustic waves (LSAWs) excited on the water-loaded specimen surface. The measurement accuracy depends mainly upon the translation accuracy of the mechanical stages used in the system and the stability of the temperature environment. New precision mechanical translation stages have been developed, and the mechanical system, including the ultrasonic device and the specimen, has been installed in a temperature-controlled chamber to reduce thermal convection and conduction at the specimen. A method for precisely measuring temperature and longitudinal velocity in the water couplant has been developed, and a measurement procedure for precisely measuring the LSAW velocities has been completed, achieving greater relative accuracy to better than ±0.002% at any single chosen point and ±0.004% for two-dimensional measurements over a scanning area of a 200-mm diameter silicon single-crystal substrate. The system was developed to address various problems arising in science and industry associated with the development of materials and device fabrication processes     

Evaluation of mass-produced commercial LiTaO3 single crystals using the LFB ultrasonic material characterization system

A mass-production line of lithium tantalate (LiTaO3) crystals with a maximum charge number of 60 for surface acoustic wave (SAW) devices was evaluated with the line-focus-beam (LFB) ultrasonic material characterization system. Some serious problems associated with chemical compositions were observed and resolved by measuring the velocities of Rayleigh-type leaky surface acoustic waves (LSAWs), VLSAW, for two groups of LiTaO3 wafers: 21 36 degrees Y X-LiTaO3 wafers selected randomly from crystal ingots grown with different charge numbers in different furnaces, and 14 42 degrees Y X-LiTaO3 wafers obtained at the top, middle, and bottom parts from 5 crystals selected from 39 crystals grown successively in the same furnace and crucible. Using the measured VLSAW and the predetermined relationship between VLSAW and Li2O concentrations, M(Li2O), we estimated the average M(Li2O) controlled in the current mass-production line to be about 48.77 mol% with a maximum difference of 0.75 mol%. The composition for each crystal ingot increased linearly about 0.04 mol% from the top to the bottom, and no dependence on the charge number was observed, as the melt composition used for the mass production was controlled through Curie temperature (TC) measurements. A nearly true congruent composition of 48.49 Li2O-mol% was obtained through the precise VLSAW data for the 42 degrees Y X-LiTaO3 wafers, that was about 0.3 mol% less than the melt composition in the production line. It was also pointed out that the TC measurement conditions, including room temperatures surrounding the measurement systems, should be re-examined for reliable production control. A guideline for more efficient mass production of the crystals has been established concerning the true congruent composition as the starting material.     

Removal of trihalomethanes from drinking water by nanofiltration membranes

Chlorine reacts with the natural organic matter (NOM) in waters and forms disinfection by-products (DBP). Major of these by-products are trihalomethanes (THM) and haloacetic acids (HAA). They have been known to cause cancer and other toxic effects to human beings. This study determined the removal efficiencies of THM by nanofiltration (NF) techniques with NF200 and DS5 membrane. The rejection of this chlorination by-products was studied at various feed concentration by changing transmembrane pressure. Experimental results indicated that in general increasing operating pressure produces a higher flux but does not have a significant effect on THM rejection. On the other hand, increasing the feed concentration produces a little change in the overall flux and rejection capacity. NF200 membrane removed more THM than DS5 membrane. The higher removal efficiency of dibromochloromethane (DBCM) was attributed to brominating characteristics (higher molecular weight (MW) and molecular size). As a consequence, the results of this study suggest that the NF membrane process is one of the best available technologies for removing THM compounds.     

Standardized evaluation of chemical compositions of LiTaO3 single crystals for SAW devices using the LFB ultrasonic material characterization system

The line-focus-beam ultrasonic material characterization (LIFB-UMC) system is applied to compare and evaluate tolerances provided independently for the Curie temperature T/sub C/ and lattice constant /spl alpha/ to evaluate commercial LiTaO/sub 3/ single crystals by measuring the Rayleigh-type leaky surface acoustic wave (LSAW) velocities V/sub LSAW/. The relationships between VLSAW, and T/sub C/ and /spl alpha/ measured by individual manufacturers were obtained experimentally using 42/spl deg/YX-LiTaO/sub 3/ wafers as specimens from three crystal manufacturers. In addition, the relationship between VLSAW and SH-type SAW velocities V/sub SAW/ that are actually used for the SAW device wafers was obtained through calculations, using the chemical composition dependences of the acoustical physical constants for LiTaO/sub 3/ crystals reported previously. The result of a comparison between the T/sub C/ tolerance of /spl plusmn/3/spl deg/C and the /spl alpha/ tolerance of /spl plusmn/0.00002 nm through the common scale of VLSAW or VSAW demonstrated that the /spl alpha/ tolerance is 1.6 times larger than the T/sub C/ tolerance. Furthermore, we performed a standardized comparison of statistical data of T/sub C/ and /spl alpha/ for LiTaO/sub 3/ crystals grown by two manufacturers during 1999 and 2000, using VLSAW. The results clarified the differences of the average chemical compositions and of the chemical composition distributions among the crystal ingots between the two manufacturers. A guideline for the standardized evaluation procedure has been established for the SAW-device wafer specifications by the LFB-UMC system.     

Nondestructive evaluation of large-area PZN-8%PT single crystal wafers for medical ultrasound imaging probe applications

A nondestructive quality evaluation and control procedure for large-area, (001)-cut PZN-8%PT wafers is described. The crystals were grown by the flux technique engineered to promote (001) layer growth of the crystals. The wafers were sliced parallel to the (001) layer growth plane. Curie temperature (Tc) variations, measured with matching arrays of dot electrodes (of 5.0 mm in center-to-center spacing), were found to be better than +/- 4.0 degrees C both within wafers and from wafer to wafer. After selective dicing to give final wafers of narrower Tc distributions (e.g., +/- 3.0 degrees C or better), the wafers were coated with complete electrodes and poled at room temperature at 0.7-0.9 kV/mm. Typical overall properties of the poled wafers were: K3T = 5,200 (+/- 10% from wafer to wafer), tan delta < 0.01 (all wafers), and kt = 0.55 (+/- 5%) (all percentage variations are in relative percentages). Then, the distributions of K3S, tan delta, and kt were measured by the array dot electrode technique. The variations in K3S (hence K3T) and kt within individual wafers were found to be within +/- 10% and +/- 5%, respectively. The dielectric loss values, measured at 1 kHz, were consistently low, being < 0.01 throughout the wafers. The kt values determined by the dot electrodes were found to be about 5% smaller than those obtained with the complete electrodes, which can be attributed to an increase in capacitance ratio due to the partial electroding. The k33 values, deduced using the relation K3S approximately (1 - k33(2))K3T, from the mean K3S and overall K3T values, average 0.94 (+/- 2%). The present work shows that the distribution of Tc within wafers can be used as a convenient check for the uniformity in composition and electromechanical properties of PZN-8%PT single crystal wafers. Our results show that, to control deltaK3T and deltakt within individual wafer to < or = 10% and 5%, respectively, the variation in Tc within the wafer should be kept within +/- 3.0 degrees C or better.     

Towards electrically conductive, self-healing materials.

A novel class of organometallic polymers comprising N-heterocyclic carbenes and transition metals was shown to have potential as an electrically conductive, self-healing material. These polymers were found to exhibit conductivities of the order of 10(-3) S cm-1 and showed structurally dynamic characteristics in the solid-state. Thin films of these materials were cast onto silicon wafers, then scored and imaged using a scanning electron microscopy (SEM). The scored films were subsequently healed via thermal treatment, which enabled the material to flow via a unique depolymerization process, as determined by SEM and surface profilometry. A method for incorporating these features into a device that exhibits electrically driven, self-healing functions is proposed.     

Implant compositions for the unidirectional delivery of drugs to the brain

The overall objective of this study was to design and characterize the properties of a bioadhesive trilayer sustained-release implant device for the unidirectional local delivery of anticancer compounds to the brain following the removal of glioblastoma multiforme tumors. Using acetaminophen as a model drug compound, we compressed trilayer wafers that contained (i) a bioadhesive layer, (ii) a drug layer that contained a lipid and a pore-forming hydrophilic polymer, and (iii) a third layer comprising a lipid substance. To maintain a unidirectional pathway of drug release from these trilayer wafers, the edges and the surface lipophilic layer were coated with molten wax followed by cooling of the wafer. These wafers were subsequently heat cured to promote interlayer adhesion in the device. Polyethylene oxide was utilized both as the bioadhesive layer and the pore-forming hydrophilic polymer. Glyceryl behenate was employed as the lipid. The drug release properties of the trilayer wafer were a function of (i) the molecular weight and concentration of polyethylene oxide in the drug-containing lipid layer, (ii) the presence of the bioadhesive layer on the wafer, and (iii) the lipid coating applied to the top and sides of the delivery system. The unidirectional release of the drug occurred from the device through the bioadhesive layer, and zero-order release kinetics resulted over a 10-day period after a 3-day lag time. During this period, <10% of the drug had been released from the wafer. All of the drug was released by 21?days.     

Patterning Techniques for Metal Organic Frameworks

The tuneable pore size and architecture, chemical properties and functionalization make metal organic frameworks (MOFs) attractive versatile stimuli‐responsive materials. In this context, MOFs hold promise for industrial applications and a fervent research field is currently investigating MOF properties for device fabrication. Although the material properties have a crucial role, the ability to precisely locate the functional material is fundamental for device fabrication. In this progress report, advancements in the control of MOF positioning and precise localization of functional materials within MOF crystals are presented. Advantages and limitations of each reviewed technique are critically investigated, and several important gaps in the technological development for device fabrication are highlighted. Finally, promising patterning techniques are presented which are inspired by previous studies in organic and inorganic crystal patterning for the future of MOF lithography.