Highly‐efficient Cd‐free CuInS2 thin‐film solar cells and mini‐modules with Zn(S,O) buffer layers prepared by an alternative chemical bath process

Recent progress in fabricating Cd‐ and Se‐free wide‐gap chalcopyrite thin‐film solar devices with Zn(S,O) buffer layers prepared by an alternative chemical bath process (CBD) using thiourea as complexing agent is discussed. Zn(S,O) has a larger band gap (E_g = 3·6–3·8 eV) than the conventional buffer material CdS (E_g = 2·4 eV) currently used in chalcopyrite‐based thin films solar cells. Thus, Zn(S,O) is a potential alternative buffer material, which already results in Cd‐free solar cell devices with increased spectral response in the blue wavelength region if low‐gap chalcopyrites are used. Suitable conditions for reproducible deposition of good‐quality Zn(S,O) thin films on wide‐gap CuInS₂ (‘CIS’) absorbers have been identified for an alternative, low‐temperature chemical route. The thickness of the different Zn(S,O) buffers and the coverage of the CIS absorber by those layers as well as their surface composition were controlled by scanning electron microscopy, X‐ray photoelectron spectroscopy, and X‐ray excited Auger electron spectroscopy. The minimum thickness required for a complete coverage of the rough CIS absorber by a Zn(S,O) layer deposited by this CBD process was estimated to ∼15 nm. The high transparency of this Zn(S,O) buffer layer in the short‐wavelength region leads to an increase of ∼1 mA/cm² in the short‐circuit current density of corresponding CIS‐based solar cells. Active area efficiencies exceeding 11·0% (total area: 10·4%) have been achieved for the first time, with an open circuit voltage of 700·4 mV, a fill factor of 65·8% and a short‐circuit current density of 24·5 mA/cm² (total area: 22·5 mA/cm²). These results are comparable to the performance of CdS buffered reference cells. First integrated series interconnected mini‐modules on 5 × 5 cm² substrates have been prepared and already reach an efficiency (active area: 17·2 cm²) of above 8%. Copyright © 2006 John Wiley & Sons, Ltd.     

Controlling Photoactivity in Ultrathin Hematite Films for Solar Water‐Splitting

A promising route to increase the performance of hematite (α‐Fe₂O₃) photoelectrodes for solar hydrogen production through water‐splitting is to use an extremely thin layer of this visible light absorber on a nanostructured scaffold. However, the typically poor performance of ultrathin (ca. 20 nm) films of hematite has been the limiting factor in implementing this approach. Here, the surprising effect of a substrate pretreatment using tetraethoxysilicate (TEOS) is reported; it results in drastic improvements in the photoperformance of 12.5 nm thick films of hematite. These films exhibit a water oxidation photocurrent onset potential at 1.1 V versus the reversible hydrogen electrode (vs. RHE) and a plateau current of 0.63 mA cm^?2 at 1.5 V vs. RHE under standard illumination conditions, representing the highest reported performance for ultrathin hematite films. In contrast, almost no photoactivity is observed for the photoanode with the same amount of hematite on an untreated substrate. A detailed study of the effects of the TEOS treatment shows that a monolayer of SiO_x is formed, which acts to change the hematite nucleation and growth mechanism, increases its crystallinity, reduces the concentration of carrier trapping states of the ultrathin films, and suggests its further application to quantum‐dot and extremely‐thin‐absorber (ETA)‐type solar cells.     

Bithienopyrroledione‐Based Copolymers,Versatile Semiconductors for Balanced Ambipolar Thin‐Film Transistors and Organic Solar Cells with V oc > 1 V

Conjugated polymer semiconductors P1 and P2 with bithienopyrroledione (bi‐TPD) as acceptor unit are synthesized. Their transistor and photovoltaic performances are investigated. Both polymers display high and balanced ambipolar transport behaviors in thin‐film transistors. P1‐ based devices show an electron mobility of 1.02 cm² V^?1 s^?1 and a hole mobility of 0.33 cm² V^?1 s^?1, one of the highest performance reported for ambipolar polymer transistors. The electron and hole mobilities of P2 transistors are 0.36 and 0.16 cm² V^?1 s^?1, respectively. The solar cells with PC₇₁BM as the electron acceptor and P1/P2 as the donor exhibit a high V _oc about 1.0 V, and a power conversion efficiency of 6.46% is observed for P1‐ based devices without any additives and/or post treatment. The high performance of P1 and P2 is attributed to their crystalline films and short π–π stacking distance (<3.5 Å). These results demonstrate (1) bi‐TPD is an excellent versatile electron‐deficient unit for polymer semiconductors and (2) bi‐TPD‐based polymer semiconductors have potential applications in organic transistors and organic solar cells.     

SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state‐of‐the‐art ZnO/CdS/Cu(In1−xGax)Se2 solar cells

We report a new state of the art in thin‐film polycrystalline Cu(In,Ga)Se₂‐based solar cells with the attainment of energy conversion efficiencies of 19·5%. An analysis of the performance of Cu(In,Ga)Se₂ solar cells in terms of some absorber properties and other derived diode parameters is presented. The analysis reveals that the highest‐performance cells can be associated with absorber bandgap values of ∼1·14 eV, resulting in devices with the lowest values of diode saturation current density (∼3×10⁻⁸ mA/cm²) and diode quality factors in the range 1·30 < A < 1·35. The data presented also support arguments of a reduced space charge region recombination as the reason for the improvement in the performance of such devices. In addition, a discussion is presented regarding the dependence of performance on energy bandgap, with an emphasis on wide‐bandgap Cu(In,Ga)Se₂ materials and views toward improving efficiency to > 1;20% in thin‐film polycrystalline Cu(In,Ga)Se₂ solar cells. Published in 2005 John Wiley & Sons, Ltd.     

Reduction of Collection Efficiency of Charge Carriers with Increasing Cell Size in Polymer Bulk Heterojunction Solar Cells

Changes in solar cell performance related to active area size were investigated using polymer bulk heterojunction devices. Cell geometry was defined by introduction of a sub‐electrode. The cells were uniform up to 16 cm². The solar cells showed little change in performance up to a cell area of 1 cm². As cell area increased above 4 cm² the power conversion efficiency dropped significantly, mostly because of fill factor (FF) drop and short circuit current density (J_sc) suppression. The changes in FF and J_sc could not be described solely by a Shockley diode equation based on an equivalent circuit model unless photocurrent collection was also considered. As cell area increased, collection efficiency deviated from unity, which further reduced device performance. That deviation is attributed to acceleration of recombination loss at low built‐in junction potentials.     

Effect of Temperature and Illumination on the Electrical Characteristics of Polymer–Fullerene Bulk‐Heterojunction Solar Cells

The current–voltage characteristics of ITO/PEDOT:PSS/OC₁C₁₀‐PPV:PCBM/Al solar cells were measured in the temperature range 125–320 K under variable illumination, between 0.03 and 100 mW cm^–2 (white light), with the aim of determining the efficiency‐limiting mechanism(s) in these devices, and the temperature and/or illumination range(s) in which these devices demonstrate optimal performance. (ITO: indium tin oxide; PEDOT:PSS: poly(styrene sulfonate)‐doped poly(ethylene dioxythiophene); OC₁C₁₀‐PPV: poly[2‐methoxy‐5‐(3,7‐dimethyl octyloxy)‐1,4‐phenylene vinylene]; PCBM: phenyl‐C₆₁ butyric acid methyl ester.) The short‐circuit current density and the fill factor grow monotonically with temperature until 320 K. This is indicative of a thermally activated transport of photogenerated charge carriers, influenced by recombination with shallow traps. A gradual increase of the open‐circuit voltage to 0.91 V was observed upon cooling the devices down to 125 K. This fits the picture in which the open‐circuit voltage is not limited by the work‐function difference of electrode materials used. The overall effect of temperature on solar‐cell parameters results in a positive temperature coefficient of the power conversion efficiency, which is 1.9 % at T = 320 K and 100 mW cm^–2 (2.5 % at 0.7 mW cm^–2). The almost‐linear variation of the short‐circuit current density with light intensity confirms that the internal recombination losses are predominantly of monomolecular type under short‐circuit conditions. We present evidence that the efficiency of this type of solar cell is limited by a light‐dependent shunt resistance. Furthermore, the electronic transport properties of the absorber materials, e.g., low effective charge‐carrier mobility with a strong temperature dependence, limit the photogenerated current due to a high series resistance, therefore the active layer thickness must be kept low, which results in low absorption for this particular composite absorber.     

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter‐layer/intrinsic‐layer/crystalline‐Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization of n‐type microcrystalline silicon (n‐µc‐Si)/intrinsic amorphous silicon (i‐a‐Si)/crystalline silicon (c‐Si) heterojunction solar cells from Pc1D is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on µc‐Si (n)/a‐Si (i)/c‐Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: the best results for J_sc = 39·4 mA/cm², V_oc = 0·64 V, FF = 83%, and η = 21% have been achieved. After optimizing the deposition parameters of the n‐layer and the H₂ pretreatment of solar cell, the single‐side HJ solar cells with J_sc = 34·6 mA/cm², V_oc = 0·615 V, FF = 71%, and an efficiency of 15·2% have been achieved. The double‐side HJ solar cell with J_sc = 34·8 mA/cm², V_oc = 0·645 V, FF = 73%, and an efficiency of 16·4% has been fabricated. Copyright © 2009 John Wiley & Sons, Ltd.     

Engineering of the Electron Transport Layer/Perovskite Interface in Solar Cells Designed on TiO2 Rutile Nanorods

The engineering of the electron transport layer (ETL)/light absorber interface is explored in perovskite solar cells. Single‐crystalline TiO₂ nanorod (NR) arrays are used as ETL and methylammonium lead iodide (MAPI) as light absorber. A dual ETL surface modification is investigated, namely by a TiCl₄ treatment combined with a subsequent PC₆₁BM monolayer deposition, and the effects on the device photovoltaic performance were evaluated with respect to single modifications. Under optimized conditions, for the combined treatment synergistic effects are observed that lead to remarkable enhancements in cell efficiency, from 14.2% to 19.5%, and to suppression of hysteresis. The devices show J_SC, V_OC, and fill factor as high as 23.2 mA cm^?2, 1.1 V, and 77%, respectively. These results are ascribed to a more efficient charge transfer across the ETL/perovskite interface, which originates from the passivation of defects and trap states at the ETL surface. To the best of our knowledge, this is the highest cell performance ever reported for TiO₂ NR‐based solar cells fabricated with conventional MAPI light absorber. Perspective wise, this ETL surface functionalization approach combined with more recently developed and better performing light absorbers, such as mixed cation/anion hybrid perovskite materials, is expected to provide further performance enhancements.     

Charge Generation and Photovoltaic Operation of Solid‐State Dye‐Sensitized Solar Cells Incorporating a High Extinction Coefficient Indolene‐Based Sensitizer

An investigation of the function of an indolene‐based organic dye, termed D149, incorporated in to solid‐state dye‐sensitized solar cells using 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxypheny‐amine)‐9,9′‐spirobifluorene (spiro‐OMeTAD) as the hole transport material is reported. Solar cell performance characteristics are unprecedented under low light levels, with the solar cells delivering up to 70% incident photon‐to‐current efficiency (IPCE) and over 6% power conversion efficiency, as measured under simulated air mass (AM) 1.5 sun light at 1 and 10 mW cm^?2. However, a considerable nonlinearity in the photocurrent as intensities approach “full sun” conditions is observed and the devices deliver up to 4.2% power conversion efficiency under simulated sun light of 100 mW cm^?2. The influence of dye‐loading upon solar cell operation is investigated and the thin films are probed via photoinduced absorption (PIA) spectroscopy, time‐correlated single‐photon counting (TCSPC), and photoluminescence quantum efficiency (PLQE) measurements in order to deduce the cause for the non ideal solar cell performance. The data suggest that electron transfer from the photoexcited sensitizer into the TiO₂ is only between 10 to 50% efficient and that ionization of the photo excited dye via hole transfer directly to spiro‐OMeTAD dominates the charge generation process. A persistent dye bleaching signal is also observed, and assigned to a remarkably high density of electrons “trapped” within the dye phase, equivalent to 1.8 × 10¹⁷ cm^?3 under full sun illumination. it is believed that this localized space charge build‐up upon the sensitizer is responsible for the non‐linearity of photocurrent with intensity and nonoptimum solar cell performance under full sun conditions.     

20.0% Efficiency Si Nano/Microstructures Based Solar Cells with Excellent Broadband Spectral Response

Spectral response of solar cells determines the output performance of the devices. In this work, a 20.0% efficient silicon (Si) nano/microstructures (N/M‐Strus) based solar cell with a standard solar wafer size of 156 × 156 mm² (pseudo‐square) has been successfully fabricated, by employing the simultaneous stack SiO₂/SiN_x passivation for the front N/M‐Strus based n⁺‐emitter and the rear surface. The key to success lies in the excellent broadband spectral responses combining the improved short‐wavelength response of the stack SiO₂/SiN_x passivated Si N/M‐Strus based n⁺‐emitter with the extraordinary long‐wavelength response of the stack SiO₂/SiN_x passivated rear reflector. Benefiting from the broadband spectral response, the highest open‐circuit voltage (V_oc) and short‐circuit current density (J_sc) reach up to 0.653 V and 39.0 mA cm^?2, respectively. This high‐performance screen‐printed Si N/M‐Strus based solar cell has shown a very promising way to the commercial mass production of the Si based high‐efficient solar cells.     

Accelerated development of CuSbS2 thin film photovoltaic device prototypes

Development of alternative thin film photovoltaic technologies is an important research topic because of the potential of low‐cost, high‐efficiency solar cells to produce terawatt levels of clean power. However, this development of unexplored yet promising absorbers can be hindered by complications that arise during solar cell fabrication. Here, a high‐throughput combinatorial method is applied to accelerate development of photovoltaic devices, in this case, using the novel CuSbS₂ absorber via a newly developed three‐stage self‐regulated growth process to control absorber purity and orientation. Photovoltaic performance of the absorber, using the typical substrate CuIn_xGa_{1 − x}Se₂ (CIGS) device architecture, is explored as a function of absorber quality and thickness using a variety of back contacts. This study yields CuSbS₂ device prototypes with ~1% conversion efficiency, suggesting that the optimal CuSbS₂ device fabrication parameters and contact selection criteria are quite different than for CIGS, despite the similarity of these two absorbers. The CuSbS₂ device efficiency is at present limited by low short‐circuit current because of bulk recombination related to defects, and a small open‐circuit voltage because of a theoretically predicted cliff‐type conduction band offset between CuSbS₂ and CdS. Overall, these results illustrate both the potential and limits of combinatorial methods to accelerate the development of thin film photovoltaic devices using novel absorbers. Copyright © 2016 John Wiley & Sons, Ltd.     

High photo‐conversion efficiency in double‐graded Cu(In,Ga)(S,Se)2 thin film solar cells with two‐step sulfurization post‐treatment

Sulfur is extensively used to increase the bandgap of Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells and to improve the open circuit voltage (V_OC ) in order to optimize the characteristics of the devices. This study uses a sulfurization process to obtain a double‐graded bandgap profile. Selenization was carried out on Cu(In,Ga) precursors, followed by one sulfurization process or two consecutive sulfurization processes on top of the CIGSe absorber layer surface. The optimum two‐step sulfurization process provides an increase of V_OC of 0.05 V and an improvement of conversion efficiency of 1.17%. The efficiency of the 30 × 30 cm² monolithic module, which has 64 CIGS cells connected in series (aperture area: 878.6 cm²), is 15.85%. The optical and electrical properties of the phase and the work function distribution were investigated using the depth profiles of the absorber layer as a function of the sulfurization conditions. The CIGSSe thin film formed by two‐step sulfurization with a high sulfur concentration exhibits a single work function peak, better crystallinity, and higher conversion efficiency than those of the thin film formed by two‐step sulfurization at low sulfur concentration. In terms of the Raman spectra depth profile, the phase areas for the CIGSSe thin film that underwent the optimized high sulfur concentration two‐step‐sulfurization appeared to have less of Cu_2‐xSe phase than that with low sulfur concentration. Consequently, surface and interface phase analysis is an essential consideration to improve cell efficiency. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.     

Impact of the Cd2+ treatment on the electrical properties of Cu2ZnSnSe4 and Cu(In,Ga)Se2 solar cells

The present contribution aims at determining the impact of modifying the properties of the absorber/buffer layer interface on the electrical performance of Cu₂ZnSnSe₄ (CZTSe) thin‐film solar cells, by using a Cd²⁺ partial electrolyte (Cd PE) treatment of the absorber before the buffer layer deposition. In this work, CZTSe/CdS solar cells with and without Cd PE treatment were compared with their respective Cu(In,Ga)Se₂ (CIGSe)/CdS references. The Cd PE treatment was performed in a chemical bath for 7 min at 70 °C using a basic solution of cadmium acetate. X‐ray photoemission spectroscopy measurements have revealed the presence of Cd at the absorber surface after the treatment. The solar cells were characterized using current density–voltage (J–V), external quantum efficiency, and drive‐level capacitance profiling measurements. For the CZTSe‐based devices, the fill factor increased from 57.7% to 64.0% when using the Cd PE treatment, leading to the improvement of the efficiency (η) from 8.3% to 9.0% for the best solar cells. Similar observations were made on the CIGSe solar cell reference. This effect comes from a considerable reduction of the series resistance (R_S) of the dark and light J–V, as determined using the one‐diode model. The crossover effect between dark and light J–V curves is also significantly reduced by Cd PE treatment. Copyright © 2015 John Wiley & Sons, Ltd.     

Integrating Low-Cost Earth-Abundant Co-Catalysts with Encapsulated Perovskite Solar Cells for Efficient and Stable Overall Solar Water Splitting

Metal halide perovskite solar cells have an appropriate bandgap (1.5–1.6 eV), and thus output voltage (>1 V), to directly drive solar water splitting. Despite significant progress, their moisture sensitivity still hampers their application for integrated monolithic devices. Furthermore, the prevalence of the use of noble metals as co-catalysts for existing perovskite-based devices undermines their use for low-cost H₂ production. Here, a monolithic architecture for stable perovskite-based devices with earth-abundant co-catalysts is reported, demonstrating an unassisted overall solar-to-hydrogen efficiency of 8.54%. The device layout consists of two monolithically encapsulated perovskite (FA_0.80MA_0.15Cs_0.05PbI_2.55Br_0.45) solar cells with low-cost earth-abundant CoP and FeNi(OH)_x co-catalysts as the photocathode and photoanode, respectively. The CoP-based photocathode demonstrates more than 17 h of continuous operation, with a photocurrent density of 12.4 mA cm⁻² at 0 V and an onset potential as positive as ≈1 V versus reversible hydrogen electrode (RHE). The FeNi(OH)_x-based photoanode achieves a photocurrent of 11 mA cm⁻² at 1.23 V versus RHE for more than 13 h continuous operation. These excellent stability and performance demonstrate the potential for monolithic integration of perovskite solar cells and low-cost earth-abundant co-catalysts for efficient direct solar H₂ production.     

Boosting the Efficiency of Perovskite Solar Cells with CsBr‐Modified Mesoporous TiO2 Beads as Electron‐Selective Contact

Rapid extraction of photogenerated charge carriers is essential to achieve high efficiencies with perovskite solar cells (PSCs). Here, a new mesoscopic architecture as electron‐selective contact for PSCs featuring 40 nm sized TiO₂ beads endowed with mesopores of a few nanometer diameters is introduced. The bimodal pore distribution inherent to these films produces a very large contact area of 200 m² g^?1 whose access by the perovskite light absorber is facilitated by the interstitial voids between the particles. Modification of the TiO₂ surface by CsBr further strengthens its interaction with the perovskite. As a result, photogenerated electrons are extracted rapidly producing a very high fill factor of close to 80% a V_OC of 1.14 V and a PCE up to 21% with negligible hysteresis.     

Solution Processable Fluorenyl Hexa‐peri‐hexabenzocoronenes in Organic Field‐Effect Transistors and Solar Cells

The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field‐effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa‐peri‐hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from ¹H NMR and 2D wide‐angle X‐ray scattering (2D WAXS) experiments that the sterically demanding 9,9‐dioctylfluorene groups are preventing π–π intermolecular contact in the hexakis‐substituted FHBC 4 . For bis‐substituted FHBC compounds 5 and 6 , π–π intermolecular contact was observed in solution and hexagonal columnar ordering was observed in solid state. Furthermore, in atomic force microscopy (AFM) experiments, nanoscale phase separation was observed in thin films of FHBC and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PC₆₁BM) blends. The differences in molecular and bulk structural features were found to correlate with OFET and BHJ solar cell performance. Poor OFET and BHJ solar cells devices were obtained for FHBC compound 4 while compounds 5 and 6 gave excellent devices. In particular, the field‐effect mobility of FHBC 6 , deposited by spin‐casting, reached 2.8 × 10^?3 cm² V^?1 s and a power conversion efficiency of 1.5% was recorded for the BHJ solar cell containing FHBC 6 and PC₆₁BM.     

ILGAR‐ZnO Window Extension Layer: an adequate substitution of the conventional CBD‐CdS buffer in Cu(In,Ga) (S,Se)2‐based solar cells with superior device performance

A novel Window Extension Layer (WEL) concept for chalcopyrite‐based thin‐film solar cell devices has been developed. The optimization of its deposition is presented. WEL means the replacement of the conventional buffer layer by a layer consisting of the same material as the window, i.e., a part of the window is directly deposited onto the absorber by a soft process, such as ILGAR (Ion Layer Gas Reaction). This sequential cyclic technique has been applied to Cu(In,Ga)(S,Se)₂ absorber substrates. The ILGAR procedure was optimized with respect to the efficiency of the resulting Mo/Cu(In,Ga)(S,Se)₂/WEL/ZnO solar cells. The devices were characterized by J–V (under AM 1.5 and without illumination) as well as by quantum efficiency measurements. Devices with ZnO WEL yield total area (0.5 cm²) efficiencies of 14.6% (best cell) without any anti‐reflecting coating. The efficiencies are superior to those of the corresponding devices with CBD (Chemical Bath Deposition)‐CdS buffer (14.1%, best cell). Thus, in contrast to other ZnO buffers, ILGAR‐ZnO achieves record efficiencies exceeding those of CBD‐CdS buffered reference cells. Copyright © 2001 John Wiley & Sons, Ltd.     

Laser structuring for back junction silicon solar cells

We demonstrate mask‐free fabrication of a 22·0%‐efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p ‐type float zone silicon wafer and the designated cell area is 4 cm². While the processing time of our laboratory‐type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12·5 × 12·5 cm²‐sized solar cells in just a few seconds is feasible with commercially available equipment. Copyright © 2006 John Wiley & Sons, Ltd.     

Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin‐film solar cells

Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor deposition system with a mixture of CH₄, SiH₄, B₂H₆ and H₂ gases. The influence of hydrogen dilution on the material properties of the p‐nc‐SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc‐Si:H) solar cells were examined. By increasing the R_H (H₂/SiH₄) ratio from 90 to 220, the Si―C bond density in the p‐nc‐SiC:H films increased from 5.20 × 10¹⁹ to 7.07 × 10¹⁹/cm³, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p‐nc‐Si:H films. For the films deposited at a high R_H ratio, the Si nanocrystallites with a size of 3–15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p‐nc‐SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p‐nc‐SiC:H films deposited at R_H = 220 were applied in the nc‐Si:H solar cells, a high conversion efficiency of 8.26% (V_oc = 0.53 V, J_sc = 23.98 mA/cm² and FF = 0.65) was obtained compared to 6.36% (V_oc = 0.44 V, J_sc = 21.90 mA/cm² and FF = 0.66) of the solar cells with reference p‐nc‐Si:H films. Further enhancement in the cell performance was achieved using p‐nc‐SiC:H bilayers consisting of highly doped upper layers and low‐level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Copyright © 2015 John Wiley & Sons, Ltd.     

Perspectives of crystalline Si thin film solar cells: a new era of thin monocrystalline Si films?

A large number of competing approaches are currently being investigated around the world to develop crystalline silicon thin film solar cells on foreign substrates. These approaches can be broadly classified according to the crystalline state of the Si films employed: (i) thin film solar cells based on nano‐ or microcrystalline Si‐films; (ii) cells fabricated from large‐grained polycrystalline Si and (iii) recent approaches utilizing the transfer of monocrystalline Si films. The paper discusses prospects and limitations of these approaches and describes device results based on the transfer of quasi‐monocrystalline Si films. Using Si absorber films epitaxially grown on quasi‐monocrystalline Si, we achieve a conversion efficiency of 13˙6% for a 4 cm² sized thin film solar cell on glass. In contrast to the limited performance of polycrystalline Si thin film solar cells imposed by the presence of grain boundaries, transfer approaches are expected to result in thin film solar cell efficiencies in the range of 15 – 18% depending on process maturity and complexity. The transfer of monocrystalline Si films therefore opens a new avenue to an efficient and competitive Si‐based thin film technology. Copyright © 2000 John Wiley & Sons, Ltd