基于液滴润湿形态测定接触角的图像处理方法

接触角是表征液体与固体润湿程度的重要度量参数,焊料、焊剂、焊盘及阻焊层的接触角与电子制造焊接工艺密切相关。针对目前基于图像测量接触角的精度还不够高的现状,提出运用Young-Laplace方程的物理原理作为图像处理的方法,基于液滴润湿形态图像处理体积并捕获顶点坐标作为拟合参数,获得良好的接触角测量精度,显著减小了重力、液滴体积和光反射干扰对测量结果的影响。     

有铅焊料焊接无铅BGA回流参数探索

航天电子产品尚未允许采用无铅焊接,而航天电子产品中采用的进口元器件多为无铅器件,因此需要对有铅焊料焊接无铅元器件进行研究。通过对无铅焊球和有铅焊料的焊接特性分析,设计数种回流参数,进行回流焊接试验,并对试验结果进行焊接分析,得出回流峰值温度为228℃~232℃,液相线(217℃)以上时间为50s~60s的回流曲线能较好完成有铅焊料对无铅BGA的焊接。     

共晶锡铅焊料与薄金焊点可靠性研究

通过对共晶锡铅焊料和PCB UBM层电镀薄金焊盘反应后的界面微观组织观察和焊点断口力学性能分析,系统研究了PCB焊盘薄金对焊点焊接性能的影响。结合Au-Sn合金二元相图理论和Au在Sn中溶解速率,研究结果显示在一定应用场合,利用薄金焊盘可避免搪锡去金工艺,可有效地提高生产效率且无可靠性风险。     

微波功率器件中AuGe合金焊接界面特征

在微观尺度上,焊点的可靠性取决于焊料同焊盘之间界面反应生成的界面金属间化合物(IMC)的结构。通过金锗合金焊点的界面反应及微观结构随环境的变化表征了焊点的可靠性,研究了AuGe合金焊料与不同金层厚度的Ni/Au焊盘共晶焊接后其界面特征,同时总结了AuGe合金焊料在Cu和Ni等常见焊盘上的焊接润湿性及其焊接界面特征。切片分析结果显示,在共晶焊接后,厚金样品焊接界面冷却时焊料层析出富Au相形成不规则焊接结合层,Au层厚度减薄50%～60%;薄金样品的Au层全部消失,并在界面处形成很薄的一层富Ni的NiGe化合物。实验结果显示,厚Au层样品未出现Ni向焊接层扩散的现象和NiGe化合物的生成,厚Au层起到了阻挡层作用;薄金样品时,Ni通过互扩散缓慢与Ge形成NiGe化合物,在长期使用中焊接层会通过元素扩散等形式演变,使整个焊接层转变为含氧化层、富P层、NiGe层和AuCuGe合金层等多层结构的IMC,降低了焊点强度,严重影响焊接层可靠性。这说明IMC在焊接过程中主要以界面化学反应方式形成,服役过程中主要以元素扩散方式演变。     

非典型的焊盘原因导致的焊接不良案例分析

本文通过对一例非典型原因导致的焊盘可焊性不良而引起的焊接不良案例的分析,介绍了焊接失效的分析过程。对于润湿不良且无明显的氧化、污染或被腐蚀的特征的非典型焊盘,业界一直找不到真正的原因。而本文则通过引入光电子能谱的表面分析手段,对润湿不良的焊盘的表面化学物质组成及其深度分布进行了分析,结果发现镍镀层中镍的扩散至金表面导致了焊盘可焊性的急剧下降,最终揭示了导致使用该焊盘进行焊接而引起的焊接不良的主要原因,为下一步避免或控制类似问题提供了改进的依据。     

封面特写之回流曲线选择

在SMT工业中，回流焊是PCB板组．装中的重要方法。一般来说，在合适的工艺条件下，回流焊工艺具有产量高、可靠性高、成本低的优势。在所有工艺因素中，回流曲线是影响焊接缺陷率最重要的因素之一。通常与回流曲线有关的缺陷有元件破裂、立碑、芯吸、锡球、桥接、锡珠、冷焊、IMC过厚、润湿不良、空洞、旋转偏移、碳化、分层、浸析、反润湿、焊料或焊盘分离等等。所以，为了达到高产量和高可靠性，选择合适的回流曲线非常重要。     

回流次数对Sn3.8Ag0.7Cu-xNi/Ni焊点的影响

研究了复合无铅焊料Sn3.8Ag0.7Cu-xNi(x=0.5,1.0,2.0)与Au/Ni/Cu焊盘在不同回流次数下形成的焊点的性能.结果表明,Ni颗粒增强的复合焊料具有良好的润湿性能,熔点小于222℃;X为0.5的焊料界面IMC由针状(CuNi)6Sn5演化为双层IMC,即多面体状化合物(CuNi)6Sn5和回飞棒...     

IMC生长对焊盘润湿性能的影响

无铅热风整平(又称:无铅喷锡)是适应市场无铅化要求的一种表面处理,近年来得到发展。热风整平工艺在完成后,焊盘Cu基与焊料已然形成金属间化合物(IMC),此界面对于后续焊接性能及焊点物理属性都有非常重要影响。业界对热风整平基板焊盘上IMC生长的研究报道较少。本文对此表面处理形成IMC层的影响及及生长模式进行了研究,发现IMC过度生长对焊盘在贴装过程中的润湿性能影响巨大,并对工艺中如何控制IMC生长做了进一步的探讨,以为业界同行参考。     

微波GaAs功率芯片的低空洞率真空焊接技术研究

文章选用80Au20Sn焊料对微波GaAs功率芯片的焊接技术进行了较为系统深入的研究,通过对共晶焊接设备与真空烧结设备分别对焊接时气体保护、焊片大小、真空工艺过程的施加和夹具设计等因素进行了试验分析。结果表明,以上参数对微波GaAs功率芯片焊接均有显著的影响,在保护气体流量为1.5L·min^-1的氮气保护下,通过施加适当的夹具静压力和金锡焊料熔化时的抽真空应用,AuSn焊料能够充分和快速润湿,实现较高的焊接质量。X射线检测结果表明,微波GaAs功率芯片焊接具有较低的空洞率,焊透率高达90％以上,焊接过程主要通过夹具装配完成,人为影响因素少,成品率高。     

随机振动加载条件下QFN焊点的优化设计

采用基于最小能量原理和有限元数值分析方法的Surface Evolver软件，建立了四方扁平无引脚器件（QFN：Quad Flat No-lead）焊点三维形态预测模型；选取焊盘长度、焊盘宽度、焊料体积和间隙高度作为四个关键因素，采用水平正交表设计了9种不同的QFN焊点工艺参数水平组合，建立了这9种焊点的三维形态预测模型，得到了不同工艺参数水平组合下的QFN焊点形态；分析在随机振动加载条件下，焊盘长度、焊盘宽度、焊料体积和间隙高度四个工艺参数的改变对QFN焊点的应力应变的影响；通过对因子趋势图分析表明：在随机振动加栽下焊盘长度和焊盘宽度对焊点应力应变影响较大，间隙高度和焊料体积对应力应变影响较小；使QFN焊点应变值最小的参数细合为：焊盘长度为0．8mm；焊盘宽度为0．37mm；间隙高度为0．15mm；焊料体积为0.014mm^3。     

Experimental Wetting Dynamics Study of Eutectic and Lead-Free Solders With Various Fluxes, Isothermal Conditions, and Bond Pad Metallizations

Demands on solder bump interconnects have increased in modern electronics. This is characterized by high density, small size, and fine-pitch devices. In solder bump interconnects, solder wetting onto bond pads is the key factor that determines the interconnect process yield and the solder joint reliability. Solder wetting involves various physical phenomena such as surface tension imbalance, viscous dissipation, molecular kinetic motion, chemical reaction, and diffusion. In this paper, an experimental study on solder wetting dynamics will be presented. The effects of solder reflow process parameters and bonding materials will be discussed, as they relate to the physics of solder wetting and ultimately the interconnect process yield and solder joint reliability. The experimental setup consists of a high-speed image acquisition system and a temperature chamber which were used to measure the time dependent behavior of molten solder spheres onto bond pads under an isothermal condition. The solder materials investigated were eutectic tin–lead solder and lead-free 95.5Sn–4.0Ag–0.5Cu solder. The wetting dynamics of the solder materials were investigated on pure Cu bond pads and Cu/Ni/Au bond pads, with several different flux systems, at different environmental temperatures and with various solder sphere sizes. The experimental observations indicate that the wetting dynamics clearly depend on temperature, solder materials, and substrate metallization but do not depend significantly on the flux system or the solder sphere size.     

ENIG Corrosion Induced by Second-Phase Precipitation

Materials analysis of a flip-chip package lot with solder bump interconnect failures revealed a new mechanism for corrosion of electroless nickel immersion gold surface finish. Detailed scanning and transmission electron microscopy (SEM and TEM) in conjunction with focused ion beam microscopy and electron dispersion analysis of the unsoldered ball grid array substrate pads on packages that exhibited flip-chip solder bump interconnect failures revealed an unusual and subtle defect in the original Ni(P) layer, which was ultimately responsible for flip-chip joint failure. Detailed TEM analysis of the defect regions showed that they consisted of Ni(P) particles of slightly different composition than the bulk Ni(P) layer. Microstructure changes around these incorporated particles indicated that the second-phase particles were deposited from the plating bath during the Ni(P) growth stage. The second-phase particles provided additional surface area for nucleation and growth of Ni(P). Ultimately, a low-density boundary region in the growing Ni(P) layer formed where the particle-induced growth front and the planar Ni(P) film growth front intersected. This low-density interface eventually terminated at the surface of the Ni(P) layer. In addition the growth from the second-phase particle created localized surface topology that was different than that of the surrounding Ni(P) layer. The low-density interfaces as well as the surface topology led to enhanced corrosion of the Ni(P) layer when exposed to the immersion gold plating process. In some cases the corrosion was severe enough to create voids in the Ni(P) layer. The exposed, oxidized Ni(P) surfaces in and around these enhanced corrosion regions did not wet when exposed to solder. This led to degradation in the strength of the solder joint and subsequent solder interconnect failure.     

Study of immersion silver and tin printed-circuit-board surface finishes in lead-free solder applications

The wetting of I-Ag (immersion silver) and I-Sn (immersion tin) printed-circuit-board (PCB) finishes by Sn/Ag/Cu and eutectic Sn/Pb solders was studied in this work with Ni/Au (electroless nickel/immersion gold) and organic solderability preservative (OSP) finishes as baselines. Wetting tests were performed on fresh boards and boards subjected to different preconditioning treatments that simulated the effects of aging, storage, and multiple reflow cycles. When the boards are fresh, the wetting of the I-Sn and Ni/Au finishes is better than that on the I-Ag and OSP finishes. However, after the preconditioning treatments, the wetting of the I-Sn finish degrades the fastest, whereas the wetting of the I-Ag and OSP finishes degrade less through the different preconditioning treatments. The wetting of the Ni/Au finish remains excellent through all the preconditioning treatments. The chemical and microstructural changes in the finishes during aging treatments were evaluated using electron spectroscopy chemical analysis (ESCA), x-ray diffractometry (XRD), and cross-sectioning followed by scanning electron microscopy (SEM). The results indicate that a single lead-free reflow cycle consumes the I-Sn layer faster than a Sn/Pb reflow cycle because of the formation of the Sn/Cu intermetallic compound (IMC). Consequently, I-Sn finished boards having an original Sn thickness of ∼1 μm will not withstand multiple lead-free reflow cycles without significant degradation in wetting but up to two Sn/Pb reflow cycles are still feasible. The minimum thickness of I-Sn required for adequate wetting was evaluated by comparing the wetting after different aging treatments. The exposure of I-Sn samples to 85°C/85% relative humidity (RH) conditions increases the thickness of the Sn-oxide layer, which, above a certain thickness, can degrade wetting. Oxidized copper areas formed on top of the I-Ag surface after exposure to 85°C/85% RH treatment, and this was considered a major factor influencing wetting. The formation of sulfides on I-Ag was detected, but their overall quantity remained too small to have a detectable impact on the wetting.     

Fermi's golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers

Electron capture from a quantum dot's (QDs) wetting layer is described by Fermi's golden rule that relates the transition rate to the density of final states. The wetting layer capture causes a brief nonequilibrium electron distribution between the QD ground state and its wetting layer states and can slow a QD laser's modulation response. This effect is studied for time constants and capture conditions relevant to self-organized InAs QDs. It is shown that even a moderately fast electron capture consistent with present low temperature measurements can limit a QD laser's modulation speed.     

ENIPIG工艺介绍及其优点

介绍了一种镍钯金ENIPIG工艺,阐述了其工艺流程和优点。ENIPIG的钯层能有效防止金和镍相互迁移,高温后仍具有良好的键合和焊锡性能,能耐多次回流焊,且能做细小间距的板,适应于高密度HDI的要求。     

Thermosonic bonding of gold wire onto silver bonding layer on the bond pads of chips with copper interconnects

A copper pad oxidizes easily at elevated temperatures during thermosonic wire bonding for chips with copper interconnects. The bondability and bonding strength of a gold wire onto a bare copper pad are seriously degraded by the formation of a copper oxide film. A new bonding approach is proposed to overcome this intrinsic drawback of the copper pad. A silver layer is deposited as a bonding layer on the surface of copper pads. Both the ball-shear force and the wire-pull force of a gold wire bonded onto copper pads with silver bonding layers far exceed the minimum values stated in the JEDEC standard and MIL specifications. The silver bonding layer improves bonding between the gold ball and copper pads. The reliability of gold ball bonds on a bond pad is verified in a high-temperature storage (HTS) test. The bonding strength increases with the storage time and far exceeds that required by the relevant industrial codes. The superior bondability and high strength after the HTS test were interpreted with reference to the results of electron probe x-ray microanalyzer (EPMA) analysis. This use of a silver bonding layer may make the fabrication of copper chips simpler than by other protective schemes.     

无铅喷锡(HASL)润湿不良问题及对策

针对东莞康佳电子有限公司生产无铅喷锡(HASL)PCB板时所遇到的焊盘润湿不良问题,采用了正常PCB板材与异常PCB板材对比,对smt生产制程条件进行内检等方法措施,以及最终对焊盘异常的PCB送国家级实验室5所分析结论确认焊盘润湿不良问题的主要表现为锡膏对PCB焊盘润湿不良,造成不良的主要原因与PCB焊盘HASL表面不平整以及焊盘已发生合金化降低其可焊性有关。并在批量生产中采取烘烤箱使用105±5℃,烘烤4小时烘烤PCB和使用酒精擦洗PCB焊盘来减少润湿不良的方法措施保证生产。     

钎料熔滴键合接头的成型过程与微观组织特征

本文利用钎料熔滴键合方法实现了传感器与基板焊盘之间的互连，对这种工艺下的接头形态、接头的形成过程及微观组织特征进行了研究。结果表明，熔滴的初始温度是影响焊点形态的关键因素，只有当初始温度达到一定值时才能形成完整焊点；润湿铺展过程中，熔滴接触焊盘的瞬间将发生扁平变形，随后扁平端的回收将促进润湿铺展的进行，另外，两侧焊盘导热条件的差异使得两侧润湿铺展过程异步进行；钎料熔滴能够利用其自身携带的热量与两侧焊盘形成良好的冶金结合，界面反应充分，同时快速的凝固条件使得接头微觋细织细小，均匀。     

Wetting interaction of Pb-free Sn-Zn-Al solders on metal plated substrate

A newly developed Pb-free Sn-9(Zn-5Al) solder was investigated for its wetting behavior on metal plated Cu substrate. The Cu substrate was plated with electroless nickel (EN) or with EN/Cu multilayer plating. The wetting behavior was investigated with a wetting balance which gave rise to a wetting curve. Fluxes including L-glutamic acid and dimethylammonium chloride were applied for enhancing the wetting behavior. The solder was unable to wet the EN plated Cu substrate without the assistance of flux until temperatures of 460°C and above. The material interaction between the solder and the substrate at this high temperature was investigated with scanning electron microscope elemental analysis. The wetting temperature between solder and EN plated copper was lowered to 310°C with the application of the above fluxes. The further incorporation of a layer of Cu plating with the EN layer further lowered the wetting temperature to 250°C.     

Thermosonic bonding of gold wire onto a copper pad with titanium thin-film deposition

A novel thermosonic (TS) bonding process for gold wire bonded onto chips with copper interconnects was successfully developed by depositing a thin, titanium passivation layer on a copper pad. The copper pad oxidizes easily at elevated temperature during TS wire bonding. The bondability and bonding strength of the Au ball onto copper pads are significantly deteriorated if a copper-oxide film exists. To overcome this intrinsic drawback of the copper pad, a titanium thin film was deposited onto the copper pad to improve the bondability and bonding strength. The thickness of the titanium passivation layer is crucial to bondability and bonding strength. An appropriate, titanium film thickness of 3.7 nm is proposed in this work. One hundred percent bondability and high bonding strength was achieved. A thicker titanium film results in poor bond-ability and lower bonding strength, because the thicker titanium film cannot be removed by an appropriate range of ultrasonic power during TS bonding. The protective mechanism of the titanium passivation layer was interpreted by the results of field-emission Auger electron spectroscopy (FEAES) and electron spectroscopy for chemical analysis (ESCA). Titanium dioxide (TiO₂), formed during the die-saw and die-mount processes, plays an important role in preventing the copper pad from oxidizing. Reliability of the high-temperature storage (HTS) test for a gold ball bonded on the copper pad with a 3.7-nm titanium passivation layer was verified. The bonding strength did not degrade after prolonged storage at elevated temperature. This novel process could be applied to chips with copper interconnect packaging in the TS wire-bonding process.