Application of charge-coupled devices to infrared detection and imaging

A review of infrared sensitive charge-coupled devices (IRCCD) is presented. Operational requirements of typical IRCCD applications are briefly introduced. IRCCD devices are divided into two major categories: a) Monolithic devices, which essentially extend the original CCD concept into the IR. Monolithic IRCCD's discussed include inversion-mode devices (with narrow bandgap semiconductor substrate), accumulation-mode devices (extrinsic wide bandgap semiconductor substrate), and Schottky-barrier devices (internal photoemission), b) Hybrid devices, in which the functions of detection and signal processing are performed in separate but integratable components by an array of IR detectors and a silicon CCD shift register unit. Hybrid IRCCD's discussed include both direct injection devices (in conjunction with photovoltaic IR detectors) and indirect injection devices (in conjunction with pyroelectric and photoconductive devices).     

Flexible devices: from materials,architectures to applications

Flexible devices,such as flexible electronic devices and flexible energy storage devices,have attracted a significant amount of attention in recent years for their potential applications in modem human lives.The development of flexible devices is moving forward rapidly,as the innovation of methods and manufacturing processes has greatly encouraged the research of flexible devices.This review focuses on advanced materials,architecture designs and abundant applications of flexible devices,and discusses the problems and challenges in current situations of flexible devices.We summarize the discovery of novel materials and the design of new architectures for improving the performance of flexible devices.Finally,we introduce the applications of flexible devices as key components in real life.     

Graphene‐Based Devices for Thermal Energy Conversion and Utilization

Thermal energy conversion and utilization of integrated circuits is a very important research topic. Graphene is a new 2D material with superior electrical, mechanical, thermal, and optical properties, which is expected to continue Moore's law and make breakthroughs in the direction of “More than Moore.” Graphene‐based functionalized devices are applied in various aspects, including breakthroughs in thermal devices, due to their high thermal conductivity and thermal rectification. According to the coupling of different physical quantities, graphene‐based thermal devices can be divided into four categories: uncoupled thermal devices, thermoacoustic coupling devices, thermoelectric coupling devices, and thermo‐optical coupling devices. The structure, working mechanism, and performance of these devices are discussed, as well as the coupling methods of physical quantities. Moreover, scale‐up production of graphene and prospect for future graphene‐based thermal devices are summarized. In‐depth study of the development tendency of these graphene‐based thermal devices is expected to contribute to the development of new high‐performance thermal nanoelectronic devices in the future.     

基于材料填充的可调光子晶体光纤器件

详细阐述了最近几年基于材料填充的可调光子晶体光纤器件的研究进展,以及发展可调光子晶体器件的重要意义。并根据调制方法的不同,进行了归类介绍：热调器件,电调器件,光调器件。对基于材料填充的可调光子晶体光纤器件的前景进行了展望。     

毫米波固体器件的研究发展动态

——本文概述了目前国际上毫米波固体器件的发展动态.毫米波固体器件是实现毫米波系统固态化和小型化的关键.文中详细评述了毫米波固体功率器件、接收器件和单片集成电路,并介绍了毫米波超导器件以及某些新原理、新结构的毫米波固体器件.最后简要地报导了国内毫米波固体器件的研制情况.     

可穿戴设备安全威胁与防护措施

随着信息通信技术日新月异地发展,信息通信产品的设备形态和业务功能不断演进,可穿戴设备正在成为信息通信技术的发展热点。一方面,可穿戴设备极大地方便了人们的工作和生活;另一方面,伴随其El益开放的体系架构和不断壮大的业务功能,可穿戴设备同时给人们带来越来越多的安全威胁。本文首先介绍可穿戴设备发展现状,然后分析可穿戴设备面临的安全威胁,继而提出可穿戴设备需要的安全措施,最后展望了可穿戴设备安全的未来发展。     

Reliability considerations of III-nitride microelectronic devices

The success of III-nitride optoelectronic devices paths the way towards emerging devices in microelectronics. These devices are currently at the threshold to commercialization, therefore reliability considerations are becoming increasingly important. This paper reviews the material and process technology of III-nitride microelectronic devices in the scope of reliability. Since statistical reliability data are lacking in the current state of research the review starts with a summary of how reliability can be designed into process modules being relevant for microelectronic devices. This includes a discussion of the most important issues of material growth, metallization, implantation, dry etching and surface passivation. The subsequent chapter focuses to microelectronic devices and highlights technological challenges that have to be met in order to obtain reliable devices. Finally, results of lifetime experiments (thermal aging) demonstrate that III-nitride devices have the potential for reliable operation even at elevated temperatures up to 400°C.     

Delay time measurement in transition metal oxide glass devices

The switching delay times for transition metal oxide glass devices vary from operation to operation. However, a statistical treatment of delay time measurements has revealed the voltage dependence of the delay times and the existence of a well-defined threshold voltage for all of the devices tested. The effect of the switch-OFF history on the performance of the devices has also been investigated. Measurements of the transition metal oxide devices are compared with similar work on chalcogenide devices.     

Flexible magnetic thin films and devices

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards,solar cells,paper-like displays,and sensitive skin,due to their stretchable,biocompatible,light-weight,portable,and low cost properties.Due to magnetic devices being important parts of electronic devices,it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates.In this review,we mainly introduce the recent progress in flexible magnetic thin films and devices,including the study on the stress-dependent magnetic properties of magnetic thin films and devices,and controlling the properties of flexible magnetic films by stress-related multi-fields,and the design and fabrication of flexible magnetic devices.     

关于半导体器件热特性表征和控制技术的研究

根据对器件散热特性的分析,提出用特定脉宽的瞬态热阻抗表征器件的稳态散热特性.测量了特定器件热阻与温度的依赖关系,建议在实际工作中注意器件热阻并不为常数的客观事实.提出应力试验前后测量器件热阻可有效控制器件的某些制造缺陷.     

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

Time-resolved Raman thermography, with a temporal resolution of , was used to study the thermal dynamics of AlGaN/GaN electronic devices (high-electron mobility transistors and ungated devices). Heat diffusion from the device active region into the substrate and within the devices was studied. Delays in the thermal response with respect to the electrical pulse were determined at different locations in the devices. Quasi-adiabatic heating of the AlGaN/GaN devices is illustrated within the first of device operation. The temperature of devices on SiC was found to reach of the dc temperature when operated with -long electrical pulses.     

大功率微波真空电子学技术进展

本文综述了近十年来微波真空电子技术进展,由于其在现代军事装备中的重要作用和近十年来技术上取得的进步,使微波真空电子器件在未来30年中仍然是国防装备的核心器件.大功率行波管、微波功率模块(MPM)、多注速调管、回旋管和微型真空电子器件等是正在发展中的重要器件;真空电子器件和半导体器件之间的相互结合与渗透,必将建立兼有两者优点的、性能更加优良的新一代大功率微波电子器件.     

基于智能接口的音频系统设计

在传统的底层硬件体系结构中,一个接口只能连接同种设备。在此,提出智能型接口技术的解决方案,使同一个接口可以连接异种异构设备,将音频系统与智能接口技术结合在一起,进一步完善了当前设备的应用,提高了现有资源的利用率。支持常用的USB存储设备和SD存储设备。     

体效应对超深亚微米SOI器件总剂量效应的影响

研究体偏置效应对超深亚微米绝缘体上硅（SOI,Silicon-on-insulator）器件总剂量效应的影响.在TG偏置下,辐照130nm PD（部分耗尽,partially depleted）SOI NMOSFET（N型金属-氧化物半导体场效应晶体管,n-type Metal-Oxide-Semiconductor Field-Effect Transistor）器件,监测辐照前后在不同体偏压下器件的电学参数.短沟道器件受到总剂量辐照影响更敏感,且宽长比越大,辐射导致的器件损伤亦更大.在辐射一定剂量后,部分耗尽器件将转变为全耗尽器件,并且可以观察到辐射诱导的耦合效应.对于10μm/0.35μm的器件,辐照后出现了明显的阈值电压漂移和大的泄漏电流.辐照前体偏压为负时的转移特性曲线相比于体电压为零时发生了正向漂移.当体电压Vb=-1.1V时部分耗尽器件变为全耗尽器件,|Vb|的继续增加无法导致耗尽区宽度的继续增加,说明体区负偏压已经无法实现耗尽区宽度的调制,因此器件的转移特性曲线也没有出现类似辐照前的正向漂移.     

A comparison of semiconductor devices for high-speed logic

The bipolar transistor and FET are compared, considering both today's most advanced implementations and "ultimate" scaled-down devices. The differences between the devices are quantified in terms of transconductance and intrinsic speed. Old limits are re-examined and ways of extending the devices toward their ultimate in performance are proposed. While the major emphasis is on silicon, a comparison is made with the GaAs MESFET. Other semiconductor devices are discussed in the context of "bipolar-like" and "FET-like" devices, and the HEMT is considered a very promising candidate for high-speed logic. While Josephson junction logic is not discussed at length, it is a continual point of reference. In addition to comparing devices, the on-chip wiring environment is discussed, especially concerning its impact on power-delay products.     

瞬态电子技术发展现状

瞬态电子器件是一种在使用阶段稳定运行、在特定条件下触发实现自动销毁或降解的新型先进电子器件。瞬态电子技术作为构建绿色电子和生物医学设备的基础,近年来受到越来越多的关注。文章介绍了瞬态电子器件的材料、加工工艺、触发机制和重要瞬态器件,对瞬态电子领域的未来发展趋势作出了展望。     

Characteristics of MBE-Grown GaN Detectors on Double Buffer Layers Under High-Power Ultraviolet Optical Irradiation

In this paper, present experimental investigations on the radiation hardness of GaN-based Schottky diode photodetectors. High-power ultraviolet (UV) radiation obtained from a Xenon lamp is used as the light source for the optical-stressing experiment. Two types of devices are being investigated. One has a double-buffer-layer structure that consists of a conventional high-temperature AlN buffer layer and an intermediate temperature buffer layer (type I), and the control device was fabricated with only a conventional AlN buffer layer (type II). Detailed current-voltage, capacitance-voltage, flicker noise, and responsivity measurements performed on the detectors show that the degradations of the devices arose from the defects present at the Schottky junctions due to the exposure of the devices to the high-power UV radiation. Both types of devices exhibit degradation in their optoelectronic properties. However, type-I devices, in general, exhibit gradual and slow degradation, whereas type-II devices exhibit catastrophic breakdowns in the device characteristics. The experimental data indicate significant improvement in the radiation hardness for type-I devices     

基于UWB、ZigBee的WPAN与WLAN的干扰

目前,大量的无线设备应用在2.4GHz这一开放频段,很明显各种设备之间存在着潜在的干扰问题,在将来的办公或家庭环境中,如何避免或减少各种WPAN设备与WLAN的相互射频干扰变得日益重要。分析了分别由UWB、ZigBee技术构成的2种新型WPAN设备和WLAN之间的影响,分别从WLAN设备链路的吞吐量和信噪比(RSN)等角度分析了802.11bWLAN与2种短距离技术设备的干扰,并进行了WPAN设备的工程实验和模拟仿真。     

Cooperative communication system for high performance using ambient signals

This paper proposes the Internet connectivity of RF-powered devices in the backscatter system. The RF-powered devices do not use a battery and charge energy by harvesting from ambient RF signals of TV, a cellular phone and Wi-Fi devices. The Internet connectivity of the RF-powered devices in the backscatter system is very useful in Internet of things technology because the RF-powered devices which are called to a tag have a small size by the harvesting from ambient RF signals without a battery. This paper proposes a method improving the communication performance of the Wi-Fi backscatter system by applying the cooperative communication scheme.

     

Realization of a Magnetoresistive Gyrator Circuit

The realization of a gyrator network with the use of rnagnetoresistive devices is analyzed from the viewpoint of minimizing the required number of negative-resistance devices. It is demonstrated that the special nature of these devices, which permits their output polarities to be easily reversed, enables the gyrator network to be realized using only one negative-resistance element. The devices investigated herein are the cryotron operating in a linear mode and the conventional magnetoresistive device. The various methods of connecting the devices are compared, and considerations are given to the advantages and the disadvantages involved in the practical implementation of the various circuit arrangements.