半导体激光器自混合振动系统优化研究

为了优化半导体激光自混合振动测量系统,本文采用三镜腔理论模型,结合激光自混合振动测量的实验结果,利用数值模拟的方法对激光自混合振动信号进行仿真分析,获得了不同外腔耦合系数ζ(0.25×10-4～1.75×10-4)以及不同半导体激光器(LD)线宽展宽因子α(1～5)下自混合振动测量信号的时域特性。结果表明,较大的外腔耦合效率ζ和LD线宽展宽因子α能够获得信噪比更大、方向性更好的激光自混合振动波形。     

Bistability in grating-tuned external-cavity semiconductor lasers

Bistability has been observed in the tuning characteristic and power versus current relation of a 1.3 μm grating-tuned external-cavity semiconductor laser. Tuning-direction reversal, current variations, and feedback interruption can change the output power and threshold current at a given wavelength. These effects are shown theoretically to be due to the coupling of the semiconductor gain and index of refraction. From measurements of the semiconductor chip facet reflectivity, solitary laser diode mode spectrum, and tuning curve in the presence of external feedback, the analysis yields values for the external feedback strength, semiconductor modal loss, and linewidth enhancement factor. Using an InGaAsP double-channel-planar-buried-heterostructure laser diode with a 4 percent reflectivity antireflection-coated facet inside an external cavity consisting of a 0.60 numerical aperture lens and a 1200 line/mm diffraction grating, we found 22 percent external feedback, 60 cm^-1modal loss, and a linewidth enhancement factoralpha = -7.1.     

Estimation of the linewidth enhancement factor for a PbCdS diodelaser

An estimation of the linewidth enhancement factor α for a PbCdS diode laser is reported. The measurement method, which is an extension of an earlier procedure involving studies of mode spectra, was devised particularly for this lead-salt diode laser of very low output power. A quite low α of 1.3 was obtained, well below the values for other types of diode lasers     

Linewidth, tunability, and VHF-millimeter wave frequency synthesis of vertical-cavity GaAs quantum-well surface-emitting laser diode arrays

The authors report the measurement of the laser linewidth, wavelength tunability, and generation of microwave frequencies between individually addressable elements of a vertical-cavity GaAs quantum-well surface-emitting laser diode array (lasing in the wavelength range 850-865 nm). Using heterodyne techniques, the authors obtain a deconvolved 65 MHz laser linewidth from the 109 MHz beat signal. The laser linewidth corresponds to a semiconductor laser linewidth enhancement factor alpha =5.7, which is in excellent agreement with that obtained independently from optical gain measurements and corresponding calculated refractive index changes. The authors measured heterodyne beat frequencies of 2-20 GHz. The bandwidth was limited by the microwave amplifiers. A simple calculation shows that a tuning range of 65 MHz to 3 THz can be achieved.<>     

Effect of phase shift position on spectral linewidth of the π/2distributed feedback laser diode

The dependence of the spectral linewidth on the phase shift position (PSP) of a phase-shifted distributed-feedback (DFB) laser diode is investigated theoretically, using the coupled wave model. In particular, the analysis is performed to find an optimum PSP so as to minimize the spectral linewidth of the laser diode. This optimum PSP is compared to that obtained by maximizing the stability of the laser oscillation. Since both narrow spectral linewidth and good stability are essential for the light source in coherent optical communications, the analysis revealed the suitability of using phase-shifted DFB laser diodes in coherent transmissions     

长腔长体布拉格光栅外腔半导体激光器

为了实现体布拉格光栅外腔半导体激光器(VBL)的外腔腔内光束合成,研究了长腔长VBL的激光输出特性。采用焦距为25 mm的平凸柱透镜作为单管激光二极管(LD)的慢轴准直镜,同时快轴方向体布拉格光栅(VBG)离轴放置,使得VBL的外腔腔长达到约240 mm,线宽从自由运转时的1.8 nm压窄至0.14 nm。在实验中,改变LD的偏振特性,VBL的激光输出特性不变。通过调节VBG温度,该长腔长VBL的激光中心波长从779.18 nm到779.75 nm连续可调,调谐过程中线宽基本不变。     

光纤延时自外差法测量DFB型LD温度调谐的瞬态特性

以马赫-曾德干涉仪(MZI)原理为基础搭建了臂长差为3km的光纤延时自外差(FOSHI)测量系统,测量了1 582nm分布反馈型(DFB)二极管激光器(LDs)在温度调谐下输出的瞬态特性,包括LDs输出波长及线宽。结果表明,DFB LDs输出光波长随调谐温度呈线性关系,通过对光电流功率谱密度函数的洛伦兹线型拟合得到LDs的线宽为3.24MHz,与3MHz理论值相近。     

A 250 Hz spectral linewidth 1.5 mu m MQW-DFB laser diode with negative-electrical-feedback

A 1.5 mu m corrugation-pitch-modulated MQW-DFB laser diode (LD) with multielectrodes was frequency stabilized using the negative electrical feedback technique. The FM response of the LD was precisely measured and used for the feedback loop design. The FM noise of the LD was reduced and reached 10 Hz/sup 2//Hz at 1 kHz>     

LD Redundancy System Using Polarization Components for a Submarine Optical Transmission System

An LD redundancy system having one cold standby laser diode is proposed to improve reliability in submarine optical transmission systems. This system makes use of the intrinsic laser polarization and consists of two LD modules and a polarization coupler connected by polarization maintaining (PANDA) fibers. The optical power insertion loss of this LD redundant system is 5.5 dB, including coupling loss between the laser diode and PANDA fiber. This LD redundant system will be applied in submarine optical repeaters.     

LD redundancy system using polarization components for a submarine optical transmission system

An LD redundancy system having one cold standby laser diode is proposed to improve reliability in submarine optical transmission systems. This system makes use of the intrinsic laser polarization and consists of two LD modules and a polarization coupler connected by polarization maintaining (PANDA) fibers. The optical power insertion loss of this LD redundant system is 5.5 dB, including coupling loss between the laser diode and PANDA fiber. This LD redundant system will be applied in submarine optical repeaters.     

一种新颖的自反馈光注入单频窄线宽光纤激光器

报道一种基于自反馈光注入的单频窄线宽光纤激光器。激光器采用线形腔结构,用高掺杂Er3+光纤作为增益介质,利用输出信号光分束反馈与腔内振荡激光干涉,形成折射率光栅与增益光栅共同作用选择纵模,获得稳定的1 549.85 nm单频窄线宽激光输出。在975 nm单模激光二极管(LD)抽运下,激光器的抽运阈值光功率为13 mW。当抽运光功率为112 mW时,最大输出信号光功率为30.6 mW,对应的光-光转换效率为27.3%,斜率效率为30.2%,信噪比大于50 dB。采用延时自外差方法测量线宽,当使用30 km单模光纤延迟线时,测量得到激光器的3 dB线宽为4.0 kHz。     

Microcavity Laser Linewidth Close to Threshold

Microcavity laser linewidth behavior close to the threshold transition region is investigated through high-resolution linewidth measurements. A local maximum is found for the linewidth of lasers operating slightly above threshold. The increase in laser linewidth close to threshold is explained by the effective contribution of the linewidth enhancement factor ( $alpha $) to the laser linewidth. The Fokker–Planck model of laser noise is then solved using the eigenfunction expansion method to fit to the measured linewidth data. The behavior of the measured linewidth agrees with the model with an extracted linewidth enhancement factor ($alpha $ ) ranging between 3.5 and 5.0.      

Linewidth of laser diodes with nonuniform phase-amplitudeα-factor

The linewidth of a laser diode having a phase-amplitude factor α that varies arbitrarily along the path is calculated. For simplicity, an ideal single-mode ring-type laser diode with only one wave circulating is considered. The theory is exact in the limit of large injected currents, provided parameters such as the carrier temperature do not vary and the gain or loss per wavelength is small. It is found that when the electron-hole pairs are injected independently of each other (that is, when the pump fluctuations are spatially uncorrelated shot noises) the linewidth is half the value obtained earlier for the linear regime multiplied by (1+α²)_av where the round-trip averaging is affected with respect to the reciprocal of the power gain. Specific examples, in particular a sequence of amplifiers and partially reflecting mirrors, are considered     

Modulation resonance enhancement in SCH quantum-well lasers with anexternal Bragg reflector

The modulation response of a semiconductor laser can be enhanced by coupling it to an external cavity with frequency-selective feedback. This creates a comb of transmission bands where the modulation response is high, at the cavity round-trip frequency and its harmonics. In a previous publication, we related the bandwidths of these bands to the material and structural parameters of a bulk laser. We showed that a nonzero linewidth enhancement factor together with a nonzero intermediate facet reflectivity lead to deep nulls close to the peaks of these transmission bands. This suggests that quantum-well (QW) lasers, which have a low linewidth enhancement factor, may give a better performance than bulk lasers. To test this hypothesis, we have extended our analysis to model QW lasers coupled to a fiber grating. Carrier transport, carrier heating, intraband carrier fluctuations, and nonparabolic band structures are considered. We show that electron carrier transport and amplitude-phase coupling in the separate-confinment-heterostructure (SCH) layer contribute to the nulls in the modulation response. Therefore, the apparent advantage of having a reduced linewidth enhancement factor that we found in our previous analysis cannot be fully realized by using QW lasers     

Measurement of gain, group index, group velocity dispersion, and linewidth enhancement factor of an InGaN multiple quantum-well laser diode

Gain, group index, group velocity dispersion (GVD), temperature variation of refractive index, and linewidth enhancement factor of an In/sub 0.15/Ga/sub 0.85/N/In/sub 0.02/Ga/sub 0.98/N multiple quantum-well blue laser diode was measured using the Fourier transform method as a function of wavelength from 400 to 410 nm. At the lasing wavelength (403.5 nm), the group index is 3.4, the GVD (dn/sub g//d/spl lambda/) is -37 /spl mu/m/sup -1/, the temperature variation of refractive index dn/dT is 1.3/spl times/10/sup -4/ K/sup -1/, and the linewidth enhancement factor is 5.6.     

Linewidth enhancement in distributed-feedback semiconductor lasers

It is demonstrated that the linewidth enhancement in distributed-feedback (DFB) laser diodes can differ significantly from (1+ alpha /sup 2/), where alpha is Henry's linewidth enhancement factor. The influence of the relevant laser parameters, the detuning of the gain peak wavelength, a pi /2 phase shift and a reflecting end facet on the linewidth enhancement is discussed with respect to an improved DFB laser design.<>     

Effects of laser diode parameters on power penalty in 10 Gb/soptical fiber transmission systems

A composite tradeoff study based on the influence of key laser diode parameters on frequency chirp induced power penalty, extinction induced power penalty, the turn-on delay, and the dispersion transmission limit is presented for 10 Gb/s optical fiber transmission systems. The simulated results reveal that an optimum range of differential gain and nonlinear gain coefficient exists, and it is advantageous to set an extinction ratio that minimizes both the total power penalty and the turn-on delay. In addition, it is shown that a reduction of chirp and maximization of the dispersion transmission limit can be realized by designing the laser diode with a linewidth enhancement factor near -0.8     

Cavity length dependence of high-speed 1.55-/spl mu/m multiple-quantum-well laser diode characteristics

Spontaneous emission spectra below threshold were measured from the side wall of InGaAs QW laser diodes to extract laser design parameters such as cavity length dependence of gain, linewidth enhancement factor, and serial resistance. The threshold current varies according to the change of cavity length, and thus, the lasing peak shifts and the serial resistance changes. It is interesting that the linewidth enhancement factor, however, is not deteriorated by shortening cavity length. The short cavity length would rather improve the linewidth enhancement factor mainly by shifting the lasing peak to smaller wavelength side, where the linewidth enhancement factor is inherently low.     

浅析元件参数对外腔半导体激光器输出谱宽影响

半导体抽运碱金属蒸气激光器（DPAL）需大功率窄线宽泵浦源,但市售半导体激光器输出线宽远远大于碱金属原子吸收谱宽,难以实现有效泵浦,因此需采用Littrow 外腔法压窄半导体激光器输出谱宽。Littrow 外腔系统中元件参数的选择直接影响大功率半导体激光器输出谱宽。为此文中沿入射光线方向构建外腔压窄模型,利用球面镜替代柱面镜,分析了微柱透镜阵列、光学系统和光栅元件对外腔输出谱宽的影响,模拟结果为微柱透镜阵列焦距越小、光栅刻线越密、球面镜焦距越大,外腔输出谱宽越窄,实验结果符合理论模型。     

Intrinsic Dynamic Properties of High-Characteristic Temperature GaInNAs Laser Diodes Operating at 1.3 μm

The properties of a high-characteristic temperature (T₀=155K) 1.3-mum GaInNAs-GaAs laser are presented with an emphasis on laser dynamic characteristics evaluated by linewidth enhancement factor and relative intensity noise. It is found that the relatively high differential gain of GaInNAs-GaAs quantum wells leads to a small linewidth enhancement factor of 2.8, indicating a small magnitude of frequency modulation with modulation current. The relative intensity noise measurements indicate a relaxation frequency of 4.7 GHz at a moderate bias current, from which the maximum intrinsic modulation bandwidth was calculated to be 9.7 GHz. The experimental determination of the low linewidth enhancement factor and high relaxation frequency reinforce the potential of dilute nitride lasers for high-speed directly modulated fiber links