Synthesis of (Zn,Mg)TiO3–TiO2 composite ceramics for multilayer ceramic capacitors

(Zn_0.8Mg_0.2)TiO₃–xTiO₂ composite ceramics has been prepared via the solid-phase synthesis method. TiO₂ was employed to tone temperature coefficient of resonant frequency (τ_f) and stabilize hexagonal (Zn, Mg)TiO₃ phase. 3ZnO–B₂O₃ was effective to promote sintering. The movement of grain boundary was obvious because of the liquid phase sintering. The scanning electron microscope (SEM) photographs and energy dispersive spectrometer (EDS) patterns showed that segregation and precipitation of dissociative (Zn, Mg)TiO₃ grains occurred at grain boundary during sintering. SnO₂ was used as inhibitor to prevent the grain boundary from moving. The dielectric behaviors of specimen strongly depended on structural transition and microstructure. We found that 1.0 wt.% 3ZnO–B₂O₃ doped (Zn, Mg)TiO₃–0.25TiO₂ ceramics with 0.1 wt.% SnO₂ additive displayed excellent dielectric properties (at 1000 °C): ?_r = 27.7, Q × f = 65,490 GHz (at 6.07 GHz) and τ_f = −8.88 ppm °C⁻¹. The above-mentioned material was applied successfully to make multilayer ceramic capacitors (MLCCs), which exhibited an excellent electrical property. The self-resonance frequency (SRF) and equivalent series resistance (ESR) of capacitor decreased with capacitance increasing, and the quality factor (Q) of capacitor reduced as frequency or capacity increased.     

Influence of Bi2O3 and CuO addition on low-temperature sintering and dielectric properties of Ba0.6Sr0.4TiO3 ceramics

In this study, we tried to lower the sintering temperature of Ba_0.6Sr_0.4TiO₃ (BST) ceramics by several kinds of adding methods of Bi₂O₃, CuO and CuBi₂O₄ additives. The effects of different adding methods on the microstructures and the dielectric properties of BST ceramics have been studied. In the all additive systems, the single addition of CuBi₂O₄ was the most effective way for lowering the sintering temperature of BST. When CuBi₂O₄ of 0.6 mol% was mixed with starting BST powders and sintered at 1100 °C, the derived ceramics demonstrated dense microstructure with a low dielectric constant (? = 4240), low dielectric loss (tan δ = 0.0058), high tunability (Tun = 38.3%) and high Q value (Q = 251). It was noteworthy that the sintering temperature was significantly lowered by 350 °C compared with no-additive system, and the derived ceramics maintained the excellent microwave dielectric properties corresponding to pure BST.     

Soft chemistry synthesis and crystal structure of MgxCu3−xV2O6(OH)4·2H2O

Mg_xCu_3−xV₂O₆(OH)₄·2H₂O (x ∼ 1), with similar crystal structure as volborthite Cu₃V₂O₇(OH)₂·2H₂O, was successfully prepared by a soft chemistry technique. The method consists of mixing magnesium nitrate and copper nitrate with a boiling solution of vanadium oxide (obtained by reacting V₂O₅ with few mL of 30 vol.% H₂O₂ followed by addition of distilled water). When ammonium hydroxide NH₄OH 10% was added (pH 7.8), a green yellowish precipitate was obtained. Using X-ray powder diffraction data, its crystal structure has been determined by Rietveld refinement. Compared to volborthite, the vanadium coordination changes from tetrahedral VO₄ to trigonal bipyramidal VO₅, and magnesium replaces copper, preferably, in the less distorted octahedron. At 300 °C, the phase formed is similar to the high pressure (HP) monoclinic Cu₃V₂O₈ phase. However at higher temperature, 600 °C, the phase obtained is different from known Cu₃V₂O₈ phases.     

Decomposition of (Ti2xFe1−xSb1−x)O4 solid solutions below 1673 K

The pseudo-binary TiO₂-FeSbO₄ system was investigated by means of thermogravimetric analysis below 1673 K in O₂. Rutile-type solid solutions were synthesised at 1373 K in O₂ by means of a solid state reaction between the two pure end members TiO₂ (rutile) and FeSbO₄ mixed in stoichiometric amounts. Thermal stability of the (Ti_2xFe_1−xSb_1−x)O₄ solid solution increases with rutile content; equimolar (Ti_1.00Fe_0.50Sb_0.50)O₄ solid solutions decompose at about 1673 K forming a TiO₂-enriched solid solution and FeSbO₄, that subsequently decomposes into Fe₂O₃ (hematite) and a volatile Sb oxide, probably Sb₄O₆. For compositions characterised by higher Ti content the decomposition temperature is higher than 1673 K.     

Optimized microwave dielectric properties of Co- and Ca-substituted Mg0.6Zn0.4TiO3

The system of (1 − y)(Mg_0.6Zn_0.4)_1−xCo_xTiO₃-yCaTiO₃ was investigated to optimize its microwave dielectric properties by adopting appropriate contents of Co and Ca and by controlling sintering conditions. The effect of Co substitution was to enhance densification and Qf value, while the addition of CaTiO₃ resulted in increases of dielectric constant and TCF. As an optimal compositions, 0.93(Mg_0.6Zn_0.4)_0.95Co_0.05TiO₃-0.07CaTiO₃ successfully demonstrated a dielectric constant of 23.04, a Qf of 79,460 GHz and a TCF value of +1.4 ppm/°C after firing at a relatively lower sintering temperature of 1200 °C. The increase of sintering temperature beyond 1200 °C tended to degrade overall microwave dielectric properties presumably due to Zn volatilization as evidenced by the presence of a Zn-deficient phase (MgTi₂O₅) at 1400 °C. An attempt to establish the correlation between microstructure characteristics and dielectric properties was made in this dielectric system where the extensive range of firing temperature up to 1400 °C was evaluated.     

Microwave dielectric properties and microstructures of the 11Li2O-3Nb2O5-12TiO2 ceramics with B2O3 addition

The effects of B₂O₃ addition, as a sintering agent, on the sintering behavior, microstructure and microwave dielectric properties of the 11Li₂O-3Nb₂O₅-12TiO₂ (LNT) ceramics have been investigated. With the low-level doping of B₂O₃ (≤2 wt.%), the sintering temperature of the LNT ceramic could be effectively reduced to 900 °C. The B₂O₃-doped LNT ceramics are also composed of Li₂TiO₃ss and “M-phase” phases. No other phase could be observed in the 0.5-2 wt.% B₂O₃-doped ceramics sintered at 840-920 °C. The addition of B₂O₃ induced no obvious degradation in the microwave dielectric properties but increased the τ_f values. Typically, the 0.5 wt.% B₂O₃-doped ceramics sintered at 900 °C have better microwave dielectric properties of ?_r = 49.2, Q × f = 8839 GHz, τ_f = 57.6 ppm/°C, which suggest that the ceramics could be applied in multilayer microwave devices requiring low sintering temperatures.     

Sintering and dielectric properties of 0.88Al2O3-0.12TiO2 microwave ceramics by glass addition

The microwave characteristics and the microstructures of 0.88Al₂O₃-0.12TiO₂ with various amounts of MgO-CaO-SiO₂-Al₂O₃ (MCAS) glass sintered at different temperatures have been investigated. The sintering temperature can be lowered to 1300 °C by the addition of MCAS glass. The densities, dielectric constants (ε_r) and quality values (Q×f) of the MCAS-added 0.88Al₂O₃-0.12TiO₂ ceramics decrease with the increase of MCAS glass content. The temperature coefficients of the resonant frequency (τ_f) are shifted to more negative values as the MCAS content or the sintering temperatures increase. The change of the crystalline phases of Al₂TiO₅ phase and rutile-TiO₂ phase has profound effects on the microwave dielectric properties of the MCAS-added Al₂O₃-TiO₂ ceramics. As sintered at 1250 °C, 0.88Al₂O₃-0.12TiO₂ ceramics with 2 wt.% MCAS glass addition exists a ε_r value of 8.63, a Q×f value of 9578 and a τ_f value of +5 ppm/°C.     

The relationship between phase composition and conditions of sintering seawater derived magnesium oxide

This study has focused on the favourable effect of the TiO₂ addition (1, 2 and 5 wt%) on the reduction of B₂O₃ content during activated sintering of magnesium oxide from seawater at temperatures of 1400, 1500 and 1700°C for the duration of 1, 2 and 4 h. A mathematical model of dependence between the B₂O₃ mass fraction in the sintered sample, the temperature of isothermal sintering, the isothermal sintering time and the mass fraction of TiO₂ added have been proposed. Magnesium oxide was obtained from seawater by substoichiometric precipitation, with the addition of 80% of dolomite lime as the precipitation agent. New phases formed in magnesium oxide samples were examined by the XRD and SEM/EDS analysis. The results indicate that during activated sintering of seawater-derived magnesium oxide with a TiO₂ addition, reactions of formation of Ca₂B₂O₅, CaTiO₃ and Mg₂TiO₄ took place simultaneously. The thermodynamics analysis of experimental results, based on the Onsager reciprocity relations (symmetry relations), was applied and phenomenological coefficients were calculated to describe the interference of these three irreversible processes.     

Low-temperature firing and microwave dielectric properties of ZnO-Nb2O5-TiO2-SnO2 ceramics with CuO-V2O5

The effects of CuO-V₂O₅ addition on the sintering temperature and microwave dielectric properties of ZnO-Nb₂O₅-TiO₂-SnO₂ were investigated. The CuO-V₂O₅ addition lowered the sintering temperature of ZnO-Nb₂O₅-TiO₂-SnO₂ ceramics effectively from 1150 to 860 °C due to the liquid-phase effect of Cu₂V₂O₇ and Cu₃(VO₄)₂, as observed by XRD. The microwave dielectric properties were found to strongly correlate with the sintering temperature and the amount of CuO-V₂O₅ addition. The maximum Qf values decreased with increasing CuO-V₂O₅ content, due to the formation of the second phase, Cu₃(VO₄)₂ and CuNbO₃. Zero τ_f value can be obtained by properly adjusting the sintering temperature. At 860 °C, ZnO-Nb₂O₅-TiO₂-SnO₂ ceramics with 1.5 wt.% CuO-V₂O₅ gave excellent microwave dielectric properties: ?_r = 42.3, Qf = 9000 GHz and τ_f = 8 ppm/°C.     

Influences of poling condition and sintering temperature on piezoelectric properties of (Na0.5Bi0.5)1 − xBaxTiO3 ceramics

The structure, ferroelectric characteristics and piezoelectric properties of (Na_0.5Bi_0.5)_1 − xBa_xTiO₃ (x = 0.04, 0.06, 0.10) ceramics prepared by conventional solid state method were investigated. The influences of poling condition and sintering temperature on the piezoelectric properties of the ceramics were examined. The piezoelectric properties of the ceramics highly depend on poling field and temperature, while no remarkable effect of poling time on the piezoelectric properties was found in the range of 5-25 min. Compared with (Na_0.5Bi_0.5)_0.96Ba_0.04TiO₃ and (Na_0.5Bi_0.5)_0.90Ba_0.10TiO₃, the piezoelectric properties of (Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ are more sensitive to poling temperature due to the relatively low depolarization temperature. Moderate increase of sintering temperature improved the poling process and piezoelectric properties due to the development of microstructural densification and crystal structure. With respect to sintering behavior and piezoelectric properties, a sintering temperature range of 1130-1160 °C was ascertained for (Na_0.5Bi_0.5)_0.90Ba_0.10TiO₃.     

Synthesis, low-temperature sintering and the dielectric properties of the ZnO-(1 − x)TiO2-xSnO2 (x = 0.04-0.2)

ZnO-(1 − x)TiO₂-xSnO₂ (x = 0.04-0.2) ceramics were prepared by conventional mixed-oxide method combined with a chemical processing. Fine particle powders were prepared by chemical processing to activate the formation of compound and to improve the sinterability. One wt.% of V₂O₅ and B₂O₃ with the mole ratios of 3:1 were used to lower the sintering temperature of ceramics. The effect of Sn content on phase structure and dielectric properties were investigated. The results show that the substituting Sn for Ti accelerates the hexagonal phase transition to cubic phase, and an inverse spinel structure Zn₂(Ti_1−xSn_x)O₄ solid solution forms. The best dielectric properties obtained at x = 0.12. The ZnO-0.88TiO₂-0.12SnO₂ ceramics sintered at 900 °C exhibit a good dielectric property: ?_r = 29 and tan δ = 9.86 × 10⁻⁵. Due to their good dielectric properties, low firing characteristics, ZnO-(1 − x)TiO₂-xSnO₂ (x = 0.04-0.2) can serve as the promising microwave dielectric capacitor.     

Stoichiometric Pb(Mg1/3Nb2/3)O3 perovskite ceramics produced by reaction-sintering process

Stoichiometric lead magnesium niobate, Pb(Mg_1/3Nb_2/3)O₃ (PMN), perovskite ceramics produced by reaction-sintering process were investigated. Without calcination, a mixture of PbO, Nb₂O₅, and Mg(NO₃)₂ was pressed and sintered directly. Stoichiometric PMN ceramics of 100% perovskite phase were obtained for 1, 2, and 4 h sintering at 1250 and 1270 °C. PMN ceramics with density 8.09 g/cm³ (99.5% of theoretical density 8.13 g/cm³) and K_max 19,900 under 1 kHz were obtained.     

Preparation of polycrystalline BaTi2O5 by pressureless sintering

Polycrystalline BaTi₂O₅ (BT₂) was prepared by pressureless sintering in air using BaCO₃ and TiO₂ as starting materials. XRD results of the calcined powder showed BaCO₃ and TiO₂ reacted completely after being calcined above 950 °C, showing a mixture of BaTiO₃ (BT), BT₂, BaTi₄O₉ and Ba₄Ti₁₃O₃₀. A small amount of ZrO₂ (less than 0.1 wt%) was effective to prepare BT₂ in a single phase and the second phase of BT and B₆T₁₇ increased with ZrO₂ content. BT₂ sintered body in a single phase was obtained at 1175-1300 °C when ZrO₂ content was 0.08 wt%. The maximum permittivity of BT₂ sintered body was 340 at the Curie temperature (T_c) of 463 °C and the frequency of 100 kHz.     

Sintering and microwave dielectric properties of LTCC-zinc titanate multilayers

The effects of ZnO–B₂O₃–SiO₂ (ZBS) on the sintering behavior and microwave dielectric properties of ZnO–TiO₂ system were investigated as a function of ZBS content and sintering temperature. Densities of the specimens were enhanced with an increase of ZBS up to 2 wt.% and then decreased. X-ray diffractometry analyses results indicated that the phase stability region of the hexagonal ZnTiO₃ extended to lower temperatures as the amount of ZBS increased. The dielectric properties of ZnO–TiO₂ system with ZBS are strongly dependent on the sintering conditions, especially near the phase decomposition temperature. The sintering temperature of the specimens could be reduced to 900 °C without the degradation of the microwave dielectric properties. From 900 °C, the temperature compensation characteristics occurred as the phase composition changed from ZnTiO₃ to two phases: Zn₂TiO₄ and rutile. The dielectric constant (ɛ_r) increased and Q×f value decreased due to the phase decomposition. The ɛ_r value of 27, Q×f value of 19,396 (at 6 GHz) and τ_f value of 2 ppm/°C were obtained for ZnO–TiO₂ ceramics with 2.0 wt.% ZBS sintered at 900 °C for 3 h. The low-temperature sintering ceramics powders were suitable for the tape casting process. Also, the material is compatible with Ag electrodes and, therefore, is suitable for LTCC application.     

Effect of Sm and Mg co-doping on the properties of ceria-based electrolyte materials for IT-SOFCs

Samples of Sm and Mg co-doped ceria electrolytes of Ce_0.8Sm_0.2−xMg_xO_2−δ (x = 0, 0.05, 0.10, 0.15 and 0.20) were sintered from powders obtained by solid-state reaction method. The structures and electrical properties were characterized by X-ray diffraction (XRD) and AC impedance spectroscopy (IS). The thermal expansion curves of samples were measured and the thermal expansion coefficients between 100 and 800 °C were calculated. Results showed that co-doping with appropriate ratio of Sm and Mg can improve the electrical performance of ceria-based electrolytes. As the substitution amount of Mg for Sm increased up to 50 mol%, the conductivity of the samples maintained almost unchanged or even slightly higher than that doped only with Sm in intermediate temperature. The results suggest that the materials cost for producing the ceria-based intermediate temperature solid oxide fuel cells (IT-SOFCs) may be significantly reduced owing to the cost difference between Mg and Sm.     

Low temperature sintering and properties of piezoelectric PZT-PFW-PMN ceramics with YMnO3 addition

Low temperature sintering of Pb(Zr,Ti)O₃-Pb(Fe_2/3W_1/3)O₃-Pb(Mn_1/3Nb_2/3)O₃ (PZT-PFW-PMN) quaternary piezoelectric ceramics were studied with the use of YMnO₃ as sintering aid. The sintering aid improved the sinterability of PZT-PFW-PMN ceramics due to the effect of YMnO₃ liquid phase. The effects of YMnO₃ contents and sintering temperature on the phase structure, density, dielectric and piezoelectric properties were investigated. The results show that the sintering temperature can be decreased and the electrical properties can be maintained by the YMnO₃ addition. The optimized properties were obtained by doping 0.30 wt.% YMnO₃ and sintering at 1020 °C, which are listed as follows: d₃₃ = 341 pC/N, K_p = 0.57, Q_m = 1393, tan δ = 0.0053, T_c = 304 °C, P_r = 17.13 μC/cm² and E_c = 11.15 kV/cm, which make this system be a promising material for multilayer piezoelectric actuator and transformer applications.     

Dielectric properties and microstructure of TiO2 modified (ZnMg)TiO3 microwave ceramics with CaO–B2O3–SiO2

The low-fired (ZnMg)TiO₃–TiO₂ (ZMT–TiO₂) microwave ceramics using low melting point CaO–B₂O₃–SiO₂ as sintering aids have been developed. The influences of Mg substituted fraction on the crystal structure and microwave properties of (Zn_1−x Mg _x )TiO₃ were investigated. The result reveals that the sufficient amount of Mg (x ≥ 0.3) could inhibit the decomposition of ZnTiO₃ effectively, and form the single-phase (ZnMg)TiO₃ at higher sintering temperatures. Due to the compensating effect of rutile TiO₂ (τ_f = 450 ppm/°C), the temperature coefficient of resonant frequency (τ_f) for (Zn_0.65Mg_0.35)TiO₃–0.15TiO₂ with biphasic structure was adjusted to near zero value. Further, CaO–B₂O₃–SiO₂ addition could reduce the sintering temperature from 1150 to 950 °C, and significantly improve the sinterability and microwave properties of ZMT–TiO₂ ceramics, which is attributed to the formation of liquid phases during the sintering process observed by SEM. The (Zn_0.65Mg_0.35)TiO₃–0.15TiO₂ dielectrics with 1 wt% CaO–B₂O₃–SiO₂ sintered at 950 °C exhibited the optimal microwave properties: ε ≈ 25, Q × f ≈ 47,000 GHz, and τ_f ≈ ± 10 ppm/°C.     

Effect of CuO addition to Nd(Zn1/2Ti1/2)O3 ceramics on sintering behavior and microwave dielectric properties

The microwave dielectric properties and microstructures of CuO-doped Nd(Zn_1/2Ti_1/2)O₃ ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn_1/2Ti_1/2)O₃ exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn_1/2Ti_1/2)O₃. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd(Zn_1/2Ti_1/2)O₃ (a = 5.4652 ± 0.0005 ?, b = 5.6399 ± 0.0007 ?, c = 7.7797 ± 0.0008 ? and β = 90.01 ± 0.01°) retained identical to that of the pure Nd(Zn_1/2Ti_1/2)O₃ in all cases. In comparison with the pure Nd(Zn_1/2Ti_1/2)O₃ ceramics, specimen with 1 wt.% CuO addition possesses a compatible combination of dielectric properties with a ε_r of 30.68, a Q × f of 158,000 GHz (at 8 GHz) and a τ_f of − 45 ppm/°C at 1270 °C. It also indicated a 60 °C lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.     

Nonlinear current-voltage properties and accelerated aging behavior of ZPCCL-based varistors with sintering temperature

The nonlinear electrical properties and accelerated aging behavior of the varistors, which are composed of ZnO-Pr₆O₁₁-CoO-Cr₂O₃-La₂O₃ (ZPCCL)-based ceramics, were investigated for different sintering temperatures. The increase of sintering temperature led to more densified ceramics, whereas it decreased the nonlinear properties and varistor voltage. The highest nonlinearity of varistors was obtained from sintering temperature of 1240 °C, in which the nonlinear coefficient is 79.4 and the leakage current is 0.3 μA. However, the highest stability of varistors was obtained from sintering temperature of 1260 °C, in which the %ΔV_1 mA is + 1.9%, the %Δα is − 10.6%, and the %ΔI_L is + 20% for stress state of 95 V_1 mA/150 °C/24 h.     

Epitaxial multi-component rare earth oxide for high-K application

We studied the growth and electrical properties of single crystalline mixed (Nd_1 − xGd_x)₂O₃ (NGO) thin films and compared the results with those of the binary Gd₂O₃ and Nd₂O₃ thin films, respectively. Epitaxial ternary NGO thin films were grown on Si(100) substrates using modified solid state molecular beam epitaxy. The films were characterized physically using various techniques. The capacitance equivalent oxide thickness of a 4.5 nm NGO thin film extracted from capacitance-voltage (C-V) characteristics was 0.9 nm, which is lower than all values reported earlier for other crystalline oxides. The leakage current density and the density of interface traps were 0.3 mA/cm² at |Vg − V_FB| =  1 V and 1.4 × 10¹²/cm², respectively. These excellent electrical properties of NGO thin films demonstrate that such ternary oxides could be one of the promising candidates for gate dielectrics in the upcoming generations of complementary metal oxide semiconductor (CMOS) devices.