RF MEMS单刀四掷矩阵开关的研究

介绍了一个RF MEMS单刀四掷矩阵开关的设计，用四个串联式、电阻接触型、悬臂梁RF MEMS开关制作在微带电路板上完成。在频带1～5GHz内，单刀四掷矩阵开关的插入损耗〈0．8dB，开关隔离度〉38dB，驻波系数〈1．2。悬臂梁开关的激励电压为直流电压35～45V。     

基于45 nm SOI工艺的超宽带毫米波单刀双掷开关的设计北大核心CSCD

提出了基于GlobalFoundries 45nm SOI工艺的布局紧凑的宽带毫米波单刀双掷开关。设计包括了采用串并结构的全频段单刀双掷开关以及采用两级晶体管并联的Ka波段通带单刀双掷开关。设计中采用共面波导串联短截线,实现小尺寸的电感。此外,利用负体偏置技术提高了开关在毫米波波段的性能。设计的单刀双掷开关芯片核心面积为0.35mm×0.16mm。测量结果显示全频段单刀双掷开关在DC^94GHz的插入损耗小于4dB,隔离度大于24dB,而Ka波段通带单刀双掷开关在25~45GHz的插入损耗为2.5~3.2dB,隔离度大于19dB。     

基于SP4T开关的4位MEMS开关线式移相器设计

设计了一款4位MEMS开关线式移相器,由SP4TMEMS开关和微带传输线构成,工作于X波段。单刀四掷(single pole 4throw,SP4T)开关用于切换两条不同电长度的信号通道,即参考相位通道和延迟相位通道。每个SP4T开关包含4个悬臂梁接触式RF MEMS串联开关。介绍了4位MEMS开关线式移相器的总体设计,并给出了其关键部件SP4T开关和相位延迟线的设计细节。采用ADS软件仿真分析了器件的电气性能。仿真分析得到:SP4T开关在中心频率10GHz处的回波损耗为-36dB,插入损耗约为0.18dB;移相器各相位的回波损耗均低于-15dB,插入损耗为-0.8～-0.4dB。这种射频MEMS移相器具有小型化、低功耗和高隔离度的优点。     

一种L～Ka波段的双边多触点型RF MEMS单刀六掷开关

目前通讯、导航等领域对单刀多掷开关有广泛的需求，而此类开关存在体积大、工作频带窄、插入损耗大、隔离度低等问题。文章设计了一种串联接触式双边多触点型RF MEMS单刀六掷开关。开关的下电极上设有三个圆形触点，远端连接有喇叭状过渡带，其上是带有带状孔的“X”形上电极，通过减小接触电阻和耦合电容来改善射频性能。经HFSS软件仿真优化，该开关工作频率可覆盖L～Ka波段，且在26.5 GHz下，插入损耗≤0.3 dB,隔离度≥37 dB,性能良好，尺寸为1.05×1.05×0.5 mm³。结果表明，设计的单刀六掷开关射频性能具有较大优势，同时满足小型化的要求，因此在L～Ka波段的导航、认知无线网络以及微波测试等领域具有较大的应用前景。     

改进K型单刀四掷射频MEMS开关

针对射频器件小型化以及5G通信发展的需求，设计了一款射频微机电系统（RF-MEMS）单刀四掷开关。该开关由一个改进型K型功分器和六个单刀单掷开关级联构成，并基于硅基MEMS工艺进行制造。其中，改进型K型功分器由多个Y型功分器串并联构成。改进的开关各端口具有插入损耗小和隔离度高的特点。最终流片的测试结果显示：该单刀四掷MEMS开关的插入损耗优于2.8 dB，隔离度优于29 dB。     

DC-20GHz射频MEMS开关

描述了DC-20GHz射频MEMS开关的设计和制造工艺.开关为一薄金属膜桥组成的桥式结构,形成一个单刀单掷(SPST)并联设置的金属-绝缘体-金属接触.开关通过上下电极之间的静电力进行控制,其插入损耗及隔离性能取决于开态和关态的电容.测试结果如下:射频MEMS开关驱动电压约为20V,在"开”态下DC-20GHz带宽的插入损耗小于0.69dB;在"关”态下在14-18GHz时隔离大于13dB,在18-20GHz时隔离大于16dB.本器件为国内首只研制成功的宽带射频MEMS开关.     

一种雪花型MEMS单刀五掷开关的研究与设计

针对MEMS单刀多掷(SPMT)开关插入损耗及隔离度较差的问题,设计了一种基于雪花型功分器的单刀五掷(SP5T)MEMS开关,通过雪花型功分器实现信号的均衡分配和低损耗传输。通过设计H形上电极结构,有效减小开关弱接触,增强开关接触稳定性,实现信号的高隔离。采用HFSS仿真软件,对开关的插入损耗、隔离、驱动电压和应力分布进行了设计,并结合COMSOL软件对开关进行了机械性能分析。结果表明,在1~20 GHz频段内,五个端口插入损耗在0.2 dB@20 GHz以下,隔离度在23 dB @20 GHz以上,驱动电压为24 V。这些指标均优于常规SPMT开关。该SP5T MEMS开关可应用于多任务、多通道可调谐器件中,在无线通信、微波测试系统中具有应用价值。     

一种新型RF MEMS 单刀双掷开关的设计与仿真

本文介绍了一种利用单驱动电压控制通路选择的新型RF MEMS单刀双掷开关,利用三维仿真软件Ansoft HFSS和ANSYS进行仿真和优化设计该开关的性能。仿真结果表明：驱动电压为22V,开关时间为22μs,在中心频率30GHz处,开关处于down状态下的插入损耗为0.42dB,回波损耗为43dB,隔离度为29dB;而当开关处于up状态的插入损耗为0.53dB,回波损耗为19dB,隔离度为28dB,该开关的性能仿真和优化设计达到理想情况。     

L波段高功率单刀双掷开关设计与实现

选用PIN二极管设计了一款工作在L 波段的高功率单刀双掷(SPDT)开关,能耐受100 W连续波功率信号。开关采用串并联结构,增大开关的隔离度的同时拓宽了带宽。通过厚膜工艺、丝网印刷制作微带线、微组装工艺完成各个器件焊接互联,完成开关的制作。开关采用-5 V/+30 V 的偏置电压进行控制。实测表明:该单刀双掷开关在1~2 GHz 内,插入损耗小于0. 7 dB,频带内输入驻波比和输出驻波比均小于1.4,隔离度大于25 dB,在连续波100 W 功率下,二极管最高温度为122.6 ℃,满足设计需求。     

DC-20GHz射频MEMS开关

描述了DC－200GHz射频MEMS开关的设计和制造工艺。开关为一薄金属膜桥组成的桥式结构,形成一个单刀单掷（SPST）并联设置的金属－绝缘体－金属接触。开关通过上下电极之间的静电力进行控制,其插入损耗及隔离性能取决于开态和关态的电容。测试结果如下：射频MEMS开关驱动电压约为20V,在“开”态下DC－20GHz带宽的插入损耗小于0．69dB;在“关”态下在14－18GHz时离小于13dB,在18－20GHz时隔离大于16dB。本器作为国内首只研制成功的宽带射频MEMS开关。     

A high-performance 40-85 GHz MMIC SPDT switch using FET-integrated transmission line structure

A compact ultra-broadband distributed SPDT switch has been developed using GaAs PHEMTs. An FET-integrated transmission line structure, where the source pad of the shunt FET has been integrated into the signal line while the drain has been grounded to a via-hole with minimum parasitic inductance, has been proposed to extend the operating bandwidth of the distributed switches. SPDT and SPST switches using this structure have been fabricated using a commercial GaAs PHEMT foundry. The SPDT switch showed low insertion loss (<2 dB) and good isolation (>30 dB) over an octave bandwidth from 40 to 85 GHz. At 77 GHz, the SPDT switch showed extremely low insertion loss of 1.4 dB and high isolation of 38 dB. The chip size was as small as 1.45/spl times/1.0 mm/sup 2/. To the best of our knowledge, this is among the best performance ever reported for an octave-band SPDT switch at this frequency range. SPST switch also showed the excellent performance with the insertion loss of 0.4 dB and isolation of 34 dB at 60 GHz.     

基于滤波器综合分析法的118 GHz单刀二掷开关

采用滤波器综合分析方法, 基于分立式AlGaAs/GaAs异质结PIN二极管, 根据其等效寄生参数, 综合出单刀二掷开关集总参数滤波器模型, 以此分析其等效分布参数电路, 设计出了118 GHz星载辐射计用单刀二掷开关准单片, 开关电路尺寸6×2.5×0.1 mm3.通过开关模块封装用波导-微带过渡和键合金带插损的分析研究, 研制出了低插损的118 GHz开关模块, 在110~120 GHz, 测得开关插损小于3.0 dB, 插损典型值2.6 dB;开关隔离度大于22 dB;开关响应时间、导通时间、关断时间、恢复时间分别小于18 ns、20 ns、10 ns、18 ns, 该准单片作为通道切换开关可集成应用于118 GHz收发组件中.     

单片集成GaAs MESFET微波开关——Ⅱ、宽带单刀单掷和单刀双掷开关电路

本文介绍了单片集成GaAs MESFET微波开关的设计方法和制作工艺.利用空气桥和通孔接地等工艺技术,研制成的调配型宽带单刀单掷开关在0.01～7GHz内,插损为2～3.5dB,隔离度不小于32dB;分布型宽带单刀双掷开关在4.5～7GHz内,插损为1～2dB,隔离度不小于21dB,5GHz下的最大功率容量为3瓦.实验也证实电路的开通时间小于0.6ns.     

Single-pole-double-throw switch based on toggle switch

A single-pole-double-throw (SPDT) switch based on the toggle switch, a new type of radio frequency (RF) microelectromechanical (MEMS) switch structure for low voltage actuation, high broadband application and enhanced power capability, is presented. Electromagnetic simulation results are discussed and the fabrication process and measurement results are given. The SPDT switch exhibits low insertion loss (<0.5 dB at 20 GHz) and high isolation (>28 dB at 30 GHz).     

一种L～E波段的混合型射频MEMS单刀双掷开关设计

针对传统RF MEMS单刀双掷(SPDT)开关应用存在频段低、插入损耗高、隔离度低等问题,设计了一种混合型SPDT开关,通过在一条通路上设置接触式开关和电容式开关,实现了在L～E频段下的低插入损耗和高隔离度。通过设计蛇形上电极结构,降低了上电极的弹性系数,进而降低开关上电极下拉所需的驱动电压。采用HFSS仿真软件对混合型SPDT开关的射频性能参数进行了优化,并利用COMSOL对开关的蛇形上电极进行应力-位移分析。仿真结果表明,在DC～90 GHz的频段下,SPDT开关的插入损耗小于1.5 dB@90 GHz,隔离度大于52 dB@67 GHz、29 dB@90 GHz。此开关适用于无线通信系统、雷达系统和仪器测量系统等对工作频段要求高的领域内。     

A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch

A novel loss compensation technique for a series-shunt single-pole double-throw (SPDT) switch is presented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30-65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps<4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30-64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5×0.95 mm².     

A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range

This paper presents a novel transistor unit cell which is intended to realize compact active switches in the high millimeter-wave frequency range. The unit cell consists of the combination of shunt and common gate transistor within a four-finger transistor cell, achieving gain in the amplifying state as well as good isolation in the isolating state. Gate width-dependent characteristics of the unit cell as well as the design of actual switch implementations are discussed in detail. To verify the concept, two switches, a single pole double throw (SPDT) switch and single pole quadruple throw (SP4T) switch, intended for the WR3 frequency range (220–325 GHz) were manufactured and characterized. The measured gain at 250 GHz is 4.6 and 2.2 dB for the SPDT and SP4T switch, respectively. An isolation of more than 24 dB for the SPDT switch and 12.8 dB for the SP4T switch was achieved.     

驱动与信号隔离的单刀双掷RF MEMS开关

设计了一种基于横向金属接触的DC-5 GHz单刀双掷RF MEMS开关,该开关包括一套有限地共面波导(FGCPW)传输线和左右摆动的悬臂梁。利用绝缘的介质层实现了驱动信号与射频信号的隔离,提高了开关的性能。根据开关的拓扑结构,提出相应的等效电路,并据此实现开关射频性能的优化设计。开关利用MetalMUMPs工艺实现,测试结果显示,该开关在5GHz的插入损耗为0.8dB,回波损耗大于20dB,隔离度为40dB。测得开关的开启电压为59V。     

GaAs MMIC broadband SPDT PIN switch

The first GaAs MMIC using PIN diodes as the active elements is described. The single-pole double-throw (SPDT) switch covers the frequency range 2 to 18 GHz, and can handle incident powers of 1W at X-band. Isolation and insertion loss vary respectively from ? 55 dB and 1 dB at 2 GHz to ?17 dB and 2.2 dB at 18 GHz.     

$Ka$-Band Low-Loss and High-Isolation Switch Design in 0.13-$mu{hbox {m}}$ CMOS

This paper presents designs and measurements of Ka-band single-pole single-throw (SPST) and single-pole double-throw (SPDT) 0.13-CMOS switches. Designs based on series and shunt switches on low and high substrate resistance networks are presented. It is found that the shunt switch and the series switch with a high substrate resistance network have a lower insertion loss than a standard designs. The shunt SPST switch shows an insertion loss of 1.0 dB and an isolation of 26 dB at >35 GHz. The series SPDT switch with a high substrate resistance network shows excellent performance with 2.2-dB insertion loss and isolation at 35 GHz, and this is achieved using two parallel resonant networks. The series-shunt SPDT switch using deep n-well nMOS transistors for a high substrate resistance network results in an insertion loss and isolation of 2.6 and 27 dB, respectively, at 35 GHz. For series switches, the input 1-dB compression point (1P₁) can be significantly increased to with the use of a high substrate resistance design. In contrast, of shunt switches is limited by the self-biasing effect to 12 dBm independent of the substrate resistance network. The paper shows that, with good design, several 0.13- CMOS designs can be used for state-of-the-art switches at 26-40 GHz.