离散傅里叶变换在电离辐射探测器性能分析中的应用

为了研制性能优良的电离室探测器前置放大器，以满足冷轧钢板测厚仪的需要，本文将傅里叶分析方法应用于电离室探测器前置放大器的性能分析中。通过对探测器零点数据的离散傅里叶变换（DFT），对电离室探测器前置放大器的设计予以有效的指导，设计出应用于实际冷轧钢板测厚仪中的电离室探测器前置放大器。     

用于高分辨率核谱仪的光电反馈前置放大器

本文对光电反馈电荷灵敏前置放大器做了比较详细的描述,给出目前得到的前置放大器的分辨率FWHM(半宽度)在主放大器成形时间常数τ为10微秒时的结果为172电子伏。采用性能较好的Si(Li)探测器。整个谱仪对~(55)Fe源的5.9千电子伏MnK_αX射线的分辨率FWHM为324电子伏(主放大器成形时间常数τ为3微秒)。最后对上述结果进行了讨论。     

一个与BF3计数管相匹配的实用前置放大器

本文介绍了一个与ＢＦ３计数管匹配的性能优良的放大器，该放大器由两级放大组成，第１级为电压串联负反馈网络，第２级为高增益的反向型运算放大器，总放大倍数〉２５００倍，具有良好的稳定性和抗干扰能力。     

电荷灵敏放大器及QDC线性研究

北京正负电子对撞机试验束粒子描迹仪系统采用多丝正比室（MWPC）做探测器，粒子信号经电荷灵敏放大器放大，经电荷积分ADC数字化。本文讨论了电荷灵敏放大器的原理及系统的线性，给出了放大器线性度软件仿真结果、电荷积分ADC的性能测量结果及数据采集系统的线性测量结果。     

用于BEPCII试验束二维平行板电离室的信号处理系统

为了实现对北京正负电子对撞机试验束装置上的二维平行板电离室电极信号的读出，设计了一套信号处理系统。系统主要包括电荷灵敏前置放大器、主放大器、模拟数字转换插件和PC机4个部分，基于Linux操作系统的数据获取程序记录数字信号并用直方图实时显示。这套信号处理系统操作方便，电子学噪声低，性能稳定。     

基于碲锌镉探测器的能谱放大器

本文简要介绍了能谱放大器的工作原理,特别是新研制的放大器根据CdZnTe探测器的特点在原有能谱仪的基础上进行的改进和完善,及仪器性能、实际测量结果等.它具有高计数率时比原有放大器分辨率和稳定性都好.本放大器还适用于Si(Li)探测器、正比计数管和闪烁探测器.     

高性能微电流集成放大器的设计

介绍了用ICL7650运算放大器设计高性能微电流集成放大器的方法,阐述了电路的工作原理和提高放大器性能的措施,给出了实际应用的实验结果。该放大器测量范围10^-9～10^-12A,自换量程,自动校零,测量准确,工作稳定。     

用于核子皮带秤的弱电流放大器崐和输出电路

研制了弱电流放大器和输出电路，其最大非线性误差为±０．０６％。实验证明其性能稳定可靠，可应用于核工业仪表。     

高分辨粉末衍射仪数据采集系统研制

介绍了中国先进研究堆(CARR)旁高分辨粉末衍射仪数据采集系统的整体设计和硬件组成，阐述了各单元电路的结构和设计。加载输入信号对电路进行了调试，测试了电路的各项性能，测试结果满足设计要求。从探测器、前置放大器、主放大器、甄别器、计数卡到计算机的整个系统，实现了对信号的获取、放大、滤波成形、甄别、定标计数和存储全过程，多达65路的数据采集系统已研制成功。     

运算放大器X和γ辐射损伤的比较

比较了运算放大器在Ｘ和γ辐射环境下性能的变化，并对Ｘ射线对运算放大器产生的剂量效应作了研究。实验测量Ｘ射线对几种典型运放的相对剂量增强系数的范围为３．４＝１２．３。ＳｉＯ２／Ｓｉ界面产生的俘获空穴电荷和界面态是运算放大器在Ｘ和γ辐射环境下的主要失效模式。     

ICON, a current mode preamplifier in CMOS technology for use withhigh rate particle detectors

The ICON current mode preamplifier intended for use in experiments at high-rate hadron colliders is described. The transient response and noise performance are analyzed. One chip has been made using an ICON circuit with resistive feedback to produce a preamplifier with a peaking time of below 10 ns. This fast preamplifier has a gain of 870 mV/pC and a power dissipation of around 1 mW. Another chip was made using the ICON circuit as the front-end to a dual-port analog memory. The noise measured is between 2400 e^- and 3000 e^-. An important characteristic of ICON is that it can tolerate a detector leakage current of 10 μA at the DC-coupled input. Therefore, it is very suitable for silicon detector systems under severe radiation conditions     

Integrated low-noise low-power fast charge-sensitive preamplifierfor avalanche photodiodes in JFET-CMOS technology

To take advantage of the compactness of avalanche photodiode (APD) arrays, low-noise power-efficient fast charge-sensitive preamplifier chips with differential current drivers have been developed. A 16-channel and a single-channel version are available. The chips were adapted for low-capacitance 4×8 APD arrays produced by Hamamatsu, Japan. A mixed junction field-effect transistor (JFET)-CMOS production process yielded high-quality integrated JFETs for the input stage of the amplifier's folded cascade. Thus, the 1/f-noise corner is kept at 4 kHz. The JFET has a transconductance of 11 mS at a drain current of 3 mA. The serial noise of the input transistor was found to be 0.8 nV/√(Hz). The signal rise time of the driver outputs is 20 ns. The rms noise of the preamplifier was found to be 480 e^- with a 25 e^- /pF noise slope for a shaping time of 50 ns. The serial input noise of the preamplifier is about 1.4 nV/√(Hz) from 200 kHz up to 40 MHz, and the 1/f-noise corner is at 70 kHz. The power consumption is 30 mW per preamplifier, including the differential driver. The linearity is better than 1.3% over 48 dB dynamic range. For the 16-channel chip, the channel-to-channel gain variation is less than 3.5%. Performance similar to photomultiplier tubes can be achieved with APDs in combination with this integrated preamplifier chip     

新型电荷灵敏前置放大器研制

基于Multisim软件仿真,研制了一种新型电荷灵敏前置放大器,其输入缓冲器采用JFET构成的共源共栅电路,放大级电路采用集成运算放大器。经测试,信号上升时间为85ns;当RC成形时间为10μs时,零电容噪声为970e,噪声斜率为7.40 e/p F,对~(137)Cs源γ射线测量信噪比为32:1。     

Monolithic junction field-effect transistor charge preamplifier forcalorimetry at high luminosity hadron colliders

The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based on them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described. Tests have demonstrated that the noise behavior of the preamplifier is close to that which would be expected if the total noise referred at the preamplifier input were the thermal noise in the input JFET device; that is, the monolithic circuit approaches the noise performances of a hybrid preamplifier using discrete JFETs     

Ultra-Low Noise Charge Sensitive Preamplifier for Scintillation Detection with Avalanche Photodiodes in PET Applications

The need for compact, fast, low-noise front-end electronics in high resolution positron emission tomography (PET) has prompted this effort to design a preamplifier suitable for avalanche photodiode-based scintillation detectors. Due to the small signals from the detectors (< .03 pC/MeV), a preamplifier with ultra-low noise performance in the 5 to 20 MHz range is essential to achieve the timing resolution required by the PET application. Out of many available technologies, a new third generation MOSFET wqas selected and implemented as input transistor in an original charge sensitive (CSP) design. Performance among the best reported to date are obtained. The new design was implemented as a dual-channel preamplifier in high density hybrid (thick film) technology.     

An HEMT input charge preamplifier for nanoseconds signal processingtime

The capabilities of the high electron mobility transistor (HEMT) as front end device in charge preamplifiers for radiation detectors have been experimentally tested. We present the design and performance of a fast low-noise charge preamplifier having an HEMT as input transistor. An equivalent noise charge of 139 rms electrons, i.e., 1.13 keV FWHM in silicon detectors, has been measured at room temperature with 10 ns RC-CR shaping and 1 pF input capacitance     

一种基于电流反馈芯片的电荷灵敏快前放设计

介绍了一种基于电流反馈运算放大器(CFOA)的快电荷灵敏放大电路。通过一个小电阻的引入避免了CFOA电路直接电容反馈所引起的电路不稳定问题,通过反馈电阻和反馈电容的适当取值降低了噪声。经过测试,其带宽可达200MHz,时间分辨率可达125ps。该前放具有高带宽、高性噪比、高时间分辨率等特点,已成功应用于兰州重离子加速器单粒子效应地面模拟实验TR5终端。     

基于ORCAD/PSPICE的电荷灵敏前置放大器仿真分析

使用电路仿真软件ORCAD/PSPICE,对电荷灵敏前置放大器的灵敏度、频率响应、噪声和温度效应等主要特性进行了仿真分析,仿真结果与理论结果相符合.这为分析、优化前置放大器的性能提供了一种便捷可靠的方法.     

硅光电二极管与电荷灵敏前置放大器在中微子实验中的设计应用研究

在台湾中微子实验项目先期研究中，用硅光电二极管测读中微子作用于CsI(Tl)晶体的光谱信号，介绍了结合硅光电二极管设计制作低噪声高分辨率电荷灵敏前置放大器的实验研究及其结果的能谱响应特性。     

开关型积分电荷灵敏前放的研究

介绍了开关电荷灵敏前放应用于高能X射线成像系统中的主要优点,初步分析了此类前放的主要噪声源,并实验比较了开关前放和传统电荷灵敏前放的噪声指标,结果显示开关前放的确因为去掉了反馈电阻的热噪声贡献而使并联电流噪声得以改善。