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研究了不同气氛下快速预热处理(RTA)后,硅片中的流动图形缺陷(FPDs)密度和随后两步热处理形成的魔幻清洁区(MDZ)之间的关系.硅片经过高温快速预热处理后,再经过800℃(4h) 1000℃(16h)常规退火,以形成MDZ.研究发现,当硅片在Ar气氛或N2/O2(9%)混合气氛下RTA预处理后,FPDs密度较低,随后热处理出现的氧沉淀诱生缺陷密度较高、清洁区较宽.对于N2/O2混和气氛,随着O2含量的增加,FPDs和氧沉淀诱生缺陷密度变小,纯O2气氛下预处理后硅片中FPDs和氧沉淀诱生缺陷密度最低.因此,可以通过调节N2/O2混合气氛中两种气氛的比例来控制空洞型微缺陷和硅片体内氧沉淀诱生缺陷的密度. 相似文献
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研究了不同气氛下快速预热处理(RTA)后,硅片中的流动图形缺陷(FPDs)密度和随后两步热处理形成的魔幻清洁区(MDZ)之间的关系.硅片经过高温快速预热处理后,再经过800℃(4h)+1000℃(16h)常规退火,以形成MDZ.研究发现,当硅片在Ar气氛或N2/O2(9%)混合气氛下RTA预处理后,FPDs密度较低,随后热处理出现的氧沉淀诱生缺陷密度较高、清洁区较宽.对于N2/O2混和气氛,随着O2含量的增加,FPDs和氧沉淀诱生缺陷密度变小,纯O2气氛下预处理后硅片中FPDs和氧沉淀诱生缺陷密度最低.因此,可以通过调节N2/O2混合气氛中两种气氛的比例来控制空洞型微缺陷和硅片体内氧沉淀诱生缺陷的密度. 相似文献
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大直径直拉硅中氮对原生氧沉淀的影响 总被引:5,自引:2,他引:3
研究了在大直径直拉硅单晶中掺氮 (N )对原生氧沉淀的影响 .通过高温一步退火 (10 5 0℃ )和低 -高温两步退火 (80 0℃ +10 5 0℃ )发现在掺 N直拉 (NCZ)硅中氧沉淀的行为与一般直拉 (CZ)硅是大不相同的 ,经过高温一步退火后 ,在氧化诱生层错环 (OSF- ring)区氧沉淀的量要小于空洞型缺陷 (voids)区 ,而经过低 -高温两步退火后 ,OSF-ring区的氧沉淀量要远远大于 voids区 .由此可得 ,在晶体生长过程中 ,N通过改变硅晶体中空位的浓度及其分布从而改变原生氧沉淀的尺寸和分布 .并在此基础上讨论了在大直径 NCZ硅中掺 N影响原生氧沉淀的机理 . 相似文献
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研究了在大直径直拉硅单晶中掺氮(N)对原生氧沉淀的影响.通过高温一步退火(1050℃)和低-高温两步退火(800℃+1050℃)发现在掺N直拉(NCZ)硅中氧沉淀的行为与一般直拉(CZ)硅是大不相同的,经过高温一步退火后,在氧化诱生层错环(OSF-ring)区氧沉淀的量要小于空洞型缺陷(voids)区,而经过低-高温两步退火后,OSF-ring区的氧沉淀量要远远大于voids区.由此可得,在晶体生长过程中,N通过改变硅晶体中空位的浓度及其分布从而改变原生氧沉淀的尺寸和分布.并在此基础上讨论了在大直径NCZ硅中掺N影响原生氧沉淀的机理. 相似文献
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外延用300mm重掺B Si衬底中热致微缺陷研究 总被引:1,自引:1,他引:0
研究了重掺B对300 mm直拉Si衬底中热致微缺陷的影响.通过800℃/4~16 h+1 100℃/16 h的低-高两步退火处理发现,与普通(CZ)Si片相比,重掺B(HBCZ)Si片体内生成了高密度的热致微缺陷--体微缺陷(BMDs);B浓度的不同对BMDs的形态也有重要影响,重掺B Si片中出现杆状层错,随着B浓度的增加,层错密度增加,尺寸减小.研究表明,重掺B对BMDs的促进作用主要归功于B原子促进了氧沉淀的异质形核并由于原子半径效应使得这些核心较容易长大,而晶体中初始氧含量不是重掺B促进氧沉淀的主要因素. 相似文献
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氮对重掺锑直拉硅中氧沉淀的影响 总被引:1,自引:1,他引:0
通过在不同条件下退火,研究氮杂质对重掺锑硅(HSb- Si)中氧沉淀的影响.实验结果表明,在高温单步退火(10 0 0~115 0℃)和低高两步退火(6 5 0℃+10 5 0℃)后,掺氮HSb- Si中与氧沉淀相关的体微缺陷的密度都要远远高于一般的HSb- Si.这说明在HSb- Si中,氮能分别在高温和低温下促进氧沉淀的生成.因此,可以认为与轻掺直拉硅一样,在HSb- Si中,氮氧复合体同样能够生成,因而促进了氧沉淀的形核.实验结果还表明氮的掺入不影响HSb硅中氧沉淀的延迟行为. 相似文献
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本文介绍了硅片背面激光损伤吸杂实验,用金相显微镜观察证实了高温退火后激光损伤的热稳定性,研究了激光损伤对氧化层错(OSF)和载流子寿命的影响,用中子活化分析法测出了吸杂效果。 相似文献
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Defect generation in Czochralski (CZ) silicon crystal during heat treatment and effect of the defects on generation currents, measured by gate controlled diodes, were investigated. Sample wafers were obtained from an as-grown CZ silicon ingot which has a wide range of oxygen concentration but keeps other characteristics nearly constant. In the diode fabrication process, a two-step heat treatment method was utilized to control defect generation. It was found that stacking faults and dislocation loops, whose densities depend on oxygen concentration, increase the reverse current of the diode and the reverse current increases caused by defects vary with heat treatment condition. The most noticeable result was that the reverse current is enhanced by increasing oxygen concentration, even if no defect is observed in the device active region because of low defect density induced by heat treatment or of denuded zone formation. This result suggests the existence of some kind of electrically active defect caused by oxygen atoms in the crystal. Surface generation current is independent of crystal quality and two-step heat treatment conditions. 相似文献
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The crystalline quality of wafer bonded (WB) silicon on insulator (SOI) structures thermal treated in dry oxygen ambients
has been investigated by means of transmission electron microscopy and defect etching. The main crystallographic defects present
in the SOI layers are dislocations, amorphous precipitates, and oxidation induced stacking faults (OISF). The evolution of
the OISFs with time and temperature has also been investigated. The main feature observed is that the OISF in WB SOI structures
undergo a retrogrowth process at temperatures around T = 1195°C for times of t = 2h. This result is very similar to that recently
reported for oxygen implanted SOI (SIMOX) but considerably different from that observed in bulk silicon. The experimental
data fits nicely a model recently proposed for the retrogrowth of OISF in thin SOI layers. This model considers that the self-interstitial
supersaturation is considerably reduced compared to bulk silicon due to the relative fast point defect recombination inside
the top silicon layer. 相似文献
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Yuheng Zeng Deren Yang Xiangyang Ma Zhidan Zeng Duanlin Que Longfei Gong Daxi Tian Liben Li 《Materials Science in Semiconductor Processing》2008,11(4):131-136
Delineation of defects in the heavily doped n-type Czochralski silicon wafers by preferential etching is an issue not having been essentially solved. Herein, a chromium-free etchant based on HNO3–HF–H2O system, with an optimum volume ratio of VHNO3%:VHF%:VH2O%=20%:45%:35%, has been developed. It can reveal well the defects such as dislocation and oxygen precipitation-induced bulk microdefects (BMDs) in the heavily doped n-type silicon wafers with resistivities even lower than 1 mΩ cm. Moreover, this etchant is appropriate to delineate the defects on (1 1 1), (1 1 0) or (1 0 0) surface of silicon crystal. Furthermore, the density of oxygen precipitation-induced BMDs in the heavily doped n-type silicon wafers derived from the preferential etching using this newly developed etchant correlates well with that derived from scanning infrared microscopy (SIRM) within its detection limit. 相似文献
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D. I. Brinkevich V. S. Prosolovich S. A. Vabishchevich A. N. Petlitskii 《Russian Microelectronics》2006,35(2):94-97
The microhardness of silicon wafers containing stacking faults is investigated experimentally. The main findings are as follows: (1) Fast-diffusing background impurities (Fe, Au, Ni, Cu, etc.) make for the formation of these defects. (2) Stacking faults are manifested in a bimodal statistical distribution of microhardness made up of two normal distributions. (3) Wafer areas with stacking faults are characterized by higher microhardness. 相似文献
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通过测量硅晶棒不同部位的氧含量,分析了氧在硅晶棒中的分布规律。结合高温氧化后的缺陷观察结果,研究了氧含量及后续高温生产工艺对硅晶体中缺陷数量的影响。对不同氧含量的两种硅单晶片所生产的功率集成电路进行了失效分析。结果表明,硅单晶片中的氧含量对产品成品率具有重要影响。当氧含量在1.77×1018~1.87×1018atoms/cm3及以上时,硅单晶片边缘出现明显的位错排,断面存在大量层错和位错缺陷,部分缺陷进入外延层中的晶体管,造成该处晶体管结漏电。相反,当氧含量偏低时,硅单晶片内的缺陷较少且分布不均,使得硅单晶片受到金属污染时不能有效吸杂而产生失效。 相似文献
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对国内外在重掺硅中氧沉淀方面的研究做了综合阐述,对氧沉淀研究现状和存在问题进行了讨论,同时就热处理,掺杂剂对氧沉淀的影响做了浅析,使人们对重掺硅衬底中氧沉淀这一领域有更深的认识. 相似文献
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Large variations have been observed between pulsed capacitor relaxation-time measurements made on samples which have received identical processing. This effect has been studied with 1 mm-diameter m.o.s. capacitors on (100)-orientation Czochralski silicon wafers. The measured relaxation times are related to process-induced defects, particularly oxidation-induced stacking faults. 相似文献
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A new rapid thermal diffusion process for shallow, heavily doped trench junctions in high density dynamic RAMs is described. Planar dopant sources are formed by spin-coating rigid substrates, such as silicon wafers or solid dopant sources, with liquid dopants. Diffusion takes place at high temperatures when the source, placed in proximity to the silicon wafer, releases dopant via evaporation followed by diffusion to the silicon surface. Well-controlled, heavily doped shallow junctions are readily obtained for B, P, and As. The doping process is shown to provide uniform doping of high-aspect-ratio trenches. Process control is achieved by controlling the wafer temperature and duration of the process. Junction depths near 0.1 μm have been demonstrated over the entire surface of trenches 0.7 μm in diameter and 6 μm in depth 相似文献