准定向ZnO纳米棒阵列的溶液生长制备及光学性质研究

通过溶胶-凝胶法制备ZnO薄膜,使其充当控制ZnO纳米线(棒)生长的先驱物种子.再采用溶液生长法制备ZnO纳米棒,运用X射线衍射(XRD)、扫描电子显微镜(SEM)和室温光致发光谱(PL)研究了ZnO样品的结构、形貌和光学性质.结果表明先驱ZnO颗粒薄膜可以控制生长准定向的ZnO纳米棒.样品的PL测试结果表明,溶液法制备的ZnO样品具有微弱的紫外发光峰和宽又强的可见发射波带,可见峰与样品的本征缺陷相关.     

ZnO纳米杆的低温水热合成及微结构表征

低温条件下,采用水热方法,通过控制六次甲基四胺（HMTA）与乙酸锌前驱溶液的摩尔比值,在玻璃衬底上制备了形貌各异的ZnO纳米杆,用X射线衍射（XRD）、场发射扫描电子显微镜（FSEM）和光致发光谱（PL）等分析手段对纳米聚集体的结构、形貌和光学性能进行了表征,同时还对其形成机理进行了初步探讨。结果表明,随着HMTA与乙酸锌摩尔比值的增加,ZnO纳米杆由实心转变为空心结构,其缺陷逐渐增多,最终导致可见发射增强。     

化学气相沉积法合成梳状纳米ZnO及其发光性能研究

在600~700 ℃,无催化剂条件下热蒸发Zn及Zn与醋酸锌(Zn(Ac)2)的混合物,成功合成了梳状纳米ZnO.通过场发射扫描电镜(FESEM)及高分辨透射电镜(HRTEM)对各类反应条件下所制备的ZnO纳米形貌进行了观察,结果表明,ZnO纳米结构具有规整的梳状,且为单晶结构,同时对梳状纳米结构体系的生长机理进行了探讨.室温光致发光谱显示,梳状ZnO的紫外发射峰位为397 nm,有明显的红移,同时半高宽(FWHM)变大,而绿光发射峰位在453~493 nm之间分裂为4个次级峰,有明显的蓝移.     

脉冲激光制备ZnO薄膜的结构和光学特性

通过脉冲激光沉积方法在1.3 Pa氧氛围,石英衬底上制备了ZnO薄膜.用X射线衍射(XRD)谱,原子力显微镜(AFM),光致发光谱(PL)表征了薄膜的结构和光学特性.XRD谱显示在生长温度500℃时获得了六方结构的单晶薄膜;AFM显示出随着温度的提升,晶粒提升,而表面粗糙度变小;PL谱显示出强烈的紫外发射和蓝光发射.随着温度的提升,薄膜的结构和光学特性得到显著提高.     

ZnO纳米片薄膜的合成、表征及其光学性质

采用水热法在修饰有ZnO种子层的石英玻璃衬底上制备出ZnO纳米片薄膜。利用场发射扫描电子显微镜、X射线衍射仪、透射电镜和荧光光谱仪对样品的形貌、结构和光致发光性质进行表征和分析,探讨了其形成机理。结果表明,制备的ZnO纳米片为六方纤锌矿型单晶结构,具有沿<101ˉ0>方向的择优取向,其室温下的光致发光谱由尖锐的紫外发光峰(380 nm处)和较宽的可见发光带组成,其中可见光发射可以拟合为中心分别位于550、620和760 nm处的3个发光峰。     

纳米ZnO/ITO导电玻璃复合材料的制备及其光学性能研究

简单硝酸锌水溶液中采用两步法电沉积技术在ITO导电玻璃衬底上沉积出透明致密ZnO薄膜.利用X射线衍射、热重—差热、光致发光谱和透射光谱对样品的结构、组成和光学性能进行了表征.结果表明:所制备的ZnO具有六角纤锌矿结构,平均粒径为纳米级,组成稳定、单一.光学测试结果表明其具有良好的发光性能,可见光区透光度高达80%.     

用PLD法在MgO(100)衬底上生长ZnO薄膜的结构和光学特性

用脉冲激光沉积法在MgO(100)衬底上沉积了ZnO薄膜.衬底温度分别为400℃、550℃和700℃.利用X射线衍射(XRD)和光致发光谱(PL)对薄膜的结构和光学性能进行研究.X射线衍射的结果表明,在400℃和550℃下生长的ZnO薄膜具有高度c-轴择优取向,但是当衬底温度升高到700℃时,薄膜由单一的择优取向变为有两个较强的择优取向.通过光致发光谱可以发现,在550℃下生长的ZnO薄膜具有强的紫外发射和窄的FWHM,并且紫外发光峰的强度与ZnO薄膜的结晶质量密切相关.     

溅射与水热混合法制备ZnO纳米结构薄膜的异常光致发光特性(英文)

用一种混合方法用来制备ZnO纳米结构薄膜,首先利用射频磁控溅射法在玻璃衬底上沉积ZnO薄膜作为种子层,然后用水热方法合成ZnO纳米结构薄膜.为研究ZnO纳米结构薄膜的特性,利用X——射线衍射(XRD)及扫描电子显微镜(SEM)对薄膜的结构和形貌进行分析,并用X——光电子能谱技术(XPS)对薄膜的化学组份进行分析,最后利用光致发光方法(PL)对ZnO薄膜的发光性能进行了研究.从XRD谱图中可以看出,无论溅射的ZnO种子层还是水热合成ZnO纳米结构薄膜均为良好c轴(002)结晶状态的六角纤锌矿结构.从SEM图像看出,磁控溅射ZnO种子层为连续平整的膜状结构;而经过水热处理后则得到垂直于衬底的六角纳米棒和纳米片两种不同形貌的结构.XPS分析现示,在ZnO种子层中,锌和氧的比例基本上为1,说明磁控溅射ZnO晶体质量较好;而ZnO纳米结构薄膜中存在明显的氧空位缺陷.值得提出的是ZnO纳米薄膜光致发光谱存在异常的特性,采用波长为325 nm的He-Cd激光激发出可见光范围(500~700 nm)内的发光带,强度最强的是橙——红色的光(~600 nm),且肉眼可直接观察到.随着激发光波长在280~380 nm范围内变化,橙...     

表面活性剂对氧化锌微纳米晶形貌及光致发光性能的影响

以硝酸锌、氢氧化钠为原料,采用水热法制备出氧化锌微纳米晶,并研究了表面活性剂对氧化锌微纳米晶形貌的影响,探讨了不同形貌氧化锌微纳米晶的生长机理。采用X射线衍射（XRD）、扫描电子显微镜（SEM）以及光致发光谱（PL）等测试手段对产物的结构、形貌和光学性能进行了表征。结果表明,借助表面活性剂CTAB、SDBS、PVPK90可分别制得片状、棒状和花状纤锌矿型氧化锌微纳米晶,3种形貌的氧化锌微纳米晶均具有光致发光特性,尤其片状ZnO微纳米晶的光致发光峰最强。     

ZnO薄膜形貌的可控合成及其光催化性能研究

采用两步合成法在硅片基底上生长了ZnO纳米阵列.通过在反应溶液中添加不同量的丙醇,可以对ZnO纳米阵列的形貌进行有效的控制.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、光致发光光谱(PL)、紫外可见漫反射光谱仪(DRS)等手段对获得样品的结构、形貌和光学性能进行了表征.另外,对不同形貌的ZnO纳米阵列在紫外灯下光催化降解罗丹B的活性进行测试研究.     

Vertically aligned ZnO nanorods on porous silicon substrates: Effect of growth time

Vertically aligned ZnO nanorods were successfully grown on porous silicon(PS) substrates by chemical bath deposition at a low temperature.X-ray diffraction, field-emission scanning electron microscopy(FESEM), transmission electron microscopy(TEM), and photoluminescence(PL)analyses were carried out to investigate the effect of growth duration(2 h to 8 h) on the optical and structural properties of the aligned ZnO nanorods. Strong and sharp ZnO(0 0 2) peaks of the ZnO nanorods proved that the aligned ZnO nanorods were preferentially fabricated along the c-axis of the hexagonal wurtzite structure. FESEM images demonstrated that the Zn O nanorod arrays were well aligned along the c-axis and perpendicular to the PS substrates regardless of the growth duration. The TEM image showed that the top surfaces of the ZnO nanorods were round with a smooth curvature. PL spectra demonstrated that the ZnO nanorods grown for 5 h exhibited the sharpest and most intense PL peaks within the ultraviolet range among all samples.     

Synthesis and Optical Property Study on ZnO Nanostructures Via Vapor Phase Growth

Nanostructural zinc oxide films have been synthesized via vapor phase growth by heating pure zinc powder. Scanning electron microscopy (SEM) images and X-ray diffraction (XRD) results showed that four kinds of morphologies ZnO nanostructures namely nanowires, well-aligned nanorods, nanofeathers and hexagonal nanorods were formed and all of wurtzite structural crystals. The results indicated that the temperature and substrate play an important role in the formation of different morphologies of ZnO nanostructures. The photoluminescence (PL) measurement was carried out for the wellaligned nanorods ZnO sample and blue emission peaks at 420 and 444 nm have been observed at room temperature. And the blue emission mechanism is discussed.     

Synthesis, Characterization and Photoluminescence of Well-Ordered ZnO Micropillars Grown on ZnO Buffer Layers

Using ZnO buffer layers prepared by simply thermal oxidation of ion beam sputtered Zn films, highly oriented and uniformly aligned single-crystalline ZnO micropillars arrays have been synthesized by thermal evaporation of Zn powder with flee catalysts at low temperature of 430℃ The ZnO micropillars show sharp hexagonal umbrella-like tips with thin ZnO nanowire grown on the tips. The umbrella-like tips grow in a layer-by-layer mode along the direction of [001]. The growth mechanism has been discussed. The formation of the micropillars basically depends on the gradually decreasing Zn vapor pressure and subsequently cooling process. The photoluminescence （PL） spectrum indicates a moderately good crystal quality of the ZnO micropillars. Our results may reinforce the understanding of the formation mechanism of different ZnO nano/microstructures. This kind of complex microstructures may find potential applications in multifunctional microdevices, optoelectronic and field emission devices.     

Co掺杂对ZnO纳米棒阵列的结构和性质的影响

通过70℃水热反应制备高密度排列的Zn1-xCoxO(x=0.05,0.10和0.15,统记为ZnCoO)纳米棒阵列,用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、X射线光电子能谱(XPS)和光致发光光谱(PL)进行表征.结果表明:Co2+替代Zn2+掺入了ZnO的晶格中,纳米棒沿[0001]方向垂直生长在含ZnO种子层的玻璃上,纳米棒平均直径约为150nm,长4.5μm.ZnO种子层和Co掺杂在ZnCoO纳米棒成核和择优生长中起着重要作用.PL光谱是由宽紫外光带(UV)和可见光(VL)构成.ZnCoO纳米棒阵列UV峰位与纯ZnO的相比发生了蓝移.随着Co含量的增加,UV峰明显宽化并发生红移.文中对紫外峰的宽化和红移起因以及ZnCoO阵列的形成机制进行了讨论.     

ZnCoO和ZnO纳米棒阵列的结构及发光特性

高浓度排列的ZnCoO、ZnO纳米棒在70℃下水热反应垂直生长在含ZnO薄膜涂层的玻璃上,这些阵列的形貌、结构和发光机理分别用场射扫描电子显微镜、X-ray衍射、光致发光来研究,显示出纳米棒直径为150 nm,沿着[0001]方向生长,氨水浓度和ZnO缓冲层在ZnCoO纳米棒成核和生长中起着重要的作用.用波长为325 nm的激光激发样品,测量了光致发光谱,光致发光表明PL光谱是由宽紫外光和可见光构成,并进一步观察发光谱随激发光功率密度的变化关系,对谱线强度、峰值波长进行了测量,同时对发光谱产生的机理、强度饱和值存在的原由、强度随激发光功率密度变化及紫光峰红移的起因进行了分析.     

低温水热制备ZnO纳米棒及其生长机理

以Zn(NO3)2·6H2O为前驱体,在碱性环境中,低温水热方法直接制备了ZnO纳米棒.应用场发射扫描电子显微镜(FESEM)、能谱仪(EDS)和X射线衍射仪(XRD)对样品进行了表征;通过光催化降解亚甲基蓝来评价ZnO的光催化活性;对60℃,1～24 h范围内不同水热样品,进行了形貌观察,分析了ZnO的形核过程.结果表明:ZnO为六边棱柱状纳米棒,晶型为纤锌矿结构;ZnO纳米棒的表观生长速率约为0.7μm/h,表观形核时间约为3 min;碱性条件是影响形核的重要因素;光催化活性随水热时间的增加而增强.     

Rapid growth of ZnO hexagonal tubes by direct microwave heating

Zinc oxide hexagonal tubular crystals were synthesized by direct microwave heating from ZnO powders within 5 min without any metal catalysts or transport agents. ZnO source materials were evaporated from the high-temperature zone in an enclosure, and crystals were grown on the self-source substrate in an appropriate condition. The ZnO vapor formed in the high-temperature zone can deposit and grow on the powders located in the low-temperature zone to form crystals. The scanning electron microscopy (SEM) reveals that these products are hexagonal tube crystals with 80 μm in diameter and 250 μm in length, having a well faceted end and side surface. A possible growth mechanism and the influence of reaction temperature on the formation of crystalline ZnO hexagonal tubes were presented. The photoluminescence (PL) exhibits strong ultraviolet emission at room temperature, indicating the potential applications in short-wave light-emitting photonic devices.     

溶剂热法制ZnO纳米棒及其气敏性能

以乙酰丙酮锌为原料,采用溶剂热法首次合成了棒状ZnO纳米粉体,并对该材料在不同工作温度下的气敏性能进行了研究。通过XRD、SEM和TEM等测试手段,表征其物相与结构。该粉体为六方晶系的ZnO纳米棒,直径约为30 nm,长度约为100 nm,结晶良好。通过静态配气法发现:采用N型氧化锌纳米棒所制得的元件在270℃下,对体积分数为5×10-4的乙醇有较好的气敏性能,灵敏度为75,响应时间及恢复时间分别为30、60 s,说明制备的ZnO纳米棒是具有潜力的探测乙醇气体的气敏传感器材料。     

The ultraviolet and blue luminescence properties of ZnO:Zn thin film

The ultraviolet (UV) and blue luminescence of Zn-rich zinc oxide thin film deposited by electron-beam evaporation have been investigated at room temperature (RT). We observed that the UV and blue electroluminescence (EL) emission band centered around 480 nm which is blue shifted in comparison with that of the ZnO thin film prepared by low pressure metal organic chemical vapor deposition (LP MOCVD). The UV emission is much stronger than blue emission in the photoluminescence (PL) spectra. The field-induced ionization of excited luminescent centers of ZnO:Zn thin film at high electric field and the difference between PL and EL are discussed. The experiments show that the ZnO:Zn thin film provides a hopeful new mechanism to obtain UV and blue emission.     

Photoluminescence of ZnO nanorods grown by hydrothermal method on Si substrate

ZnO nanorods were grown on Si substrate by hydrothermal method under various reaction time (12, 24, and 36 h), Zn²⁺ concentrations (0.01, 0.02, and 0.05 mol/L) and reaction temperatures (70–95 °C). Their photoluminescence (PL) tests were taken at room temperature. Nanorods grown under longer reaction times or higher temperatures can emit stronger UV light and depressed green light, suggesting better crystallization of ZnO nanorods. Higher Zn²⁺ concentration results in stronger green band emitting, whereas the UV peak is depressed with the Zn²⁺ concentration over 0.02 mol/L. This indicates that excessive interstitial Zn defects may be introduced into the nanorods in Zn-rich environment.