Effect of ZnO-B<Subscript>2</Subscript>O<Subscript>3</Subscript> glass addition on the microwave dielectric properties of BaO-Nd<Subscript>2</Subscript>O<Subscript>3</Subscript>-TiO<Subscript>2</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> system

The effect of ZnO-B₂O₃(ZB) glass addition on the sintering behavior, microstructures and microwave dielectric properties of BaO-Nd₂O₃-TiO₂-Bi₂O₃ (BNTB) system was investigated with the aid of X-ray diffraction, scanning electron microscopy and capacitance meter. It is found that the ZB glass addition, acting as a sintering aid, can effectively lower the sintering temperature of BNTB system to 850 °C. The dielectric constant of BNTB-ZB ceramics increases with the increase of soaking time and the value of dielectric loss decreased with increasing soak time. The optical dielectric properties at 1 GHz of ɛ=74, tan δ=4×10⁻⁴, and TCC=25 ppm/°c were obtained for the BNTB system doped with 25 wt% ZB glass sintered at 850 °C for 2 h, representing that the BNTB-ZB ceramics could be promising for multilayer low temperature co-fired ceramics applications.     

Dielectric tunable properties of BaTi<Subscript>4</Subscript>O<Subscript>9</Subscript>-doped Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> microwave composite ceramics

BaTi₄O₉-doped Ba_0.6Sr_0.4TiO₃ (BST) composite ceramics were prepared by the conventional solid-state reaction and their structure, dielectric nonlinear characteristics and microwave dielectric properties were investigated. The secondary phase of the orthorhombic structure Ba₄Ti₁₃O₃₀ is formed among BST composite ceramics with the increase of BaTi₄O₉. At the same time, a duplex or bimodal grains size distribution shows fine grains in a coarse grain matrix. The degree of frequency dispersion of dielectric permittivity below T _m is increased initially and then decreased with respect to BaTi₄O₉. As the BaTi₄O₉ content increases, the tunability of composite ceramics decreases, while the Q value increases. Interestingly, 70 wt% BaTi₄O₉-doped BST has a tunability ∼4.0% (under 30 kV/cm biasing) versus a permittivity ∼68 and quality factor ∼134.1 (at ∼3.2 GHz). Supported by the Ministry of Science and Technology of China through 973-project (Grant No. 2009CB623302), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No.707024), Shanghai Committee of Science and Technology (Grant No. 07DZ22302), and Shanghai Foundation Project under 06JC14070     

Structure and dielectric properties of ZnO and Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> doped BaO-TiO<Subscript>2</Subscript> system microwave ceramics

The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of （y=0-0.05） ZnO and （x=0-0.025） Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant ε r and quality factor Q（=1/tan 8） of the system due to the substitution of Ti^4＋ ions with incorporating Zn^2＋and Nb^5＋ ions, which was analyzed by the reaction ZnO＋Nb2O5＋ 3 TiTxTi →ZnTi＋ 2NbTi＋3TiO2. When the system doped with （y=0.05） ZnO and （x=0.025） Nb205 were sintered at 1 160 ℃ for 6 h, the εr. Qf0 value and rfwere 36.5, 42 000 GHz, and＋1.8 ppm/℃, respectively, at 5 GHz.     

Dielectric properties of Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ceramics by impedance spectroscopic method

Various lead-free ceramics have been investigated in search for new high-temperature dielectrics. In particular, Bi₄Ti₃O₁₂ is a type of ferroelectric ceramics, which is supposed to replace leadcontaining ceramics for its outstanding dielectric properties in the near future. Ferroelectric ceramics of Bi₄Ti₃O₁₂ made by conventional mixed oxide route have been studied by impedance spectroscopy in a wide range of temperature. X-ray diffraction patterns show that Bi₄Ti₃O₁₂ ceramics are a single-phase of ferroelectric Bi-layered perovskite structure whether it is calcined at 800 °C or after sintering production. This study focused on the effect of the grain size on the electric properties of BIT ceramics. The BIT ceramics with different grain sizes were prepared at different sintering temperatures. Grain becomes coarser with the sintering temperature increasing by 50 °C, relative permittivity and dielectric loss also change a lot. When sintered at 1 100 °C, r values peak can reach 205.40 at a frequency of 100 kHz, the minimum dielectric losses of four different frequencies make no difference, all close to 0.027. The values of E _a range from 0.52 to 0.68 eV. The dielectric properties of the sample sintered at 1 100 °C are relatively better than those of the other samples by analyzing the relationship of the grain, the internal stresses, the homogeneity and the dielectric properties. SEM can better explain the results of the dielectric spectrum at different sintering temperatures. The results show that Bi₄Ti₃O₁₂ ceramics are a kind of dielectrics. Thus, Bi₄Ti₃O₁₂ can be used in high-temperature capacitors and microwave ceramics.     

Preparation and properties of crystallizable Glass/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composites for LTCC material

The investigated low temperature Co fired ceramics(LTCC) composite of 60wt% CaO-Al2O3-B2O3-SiO2 glass and 40wt% α-Al2O3 as a filler is a non-reactive system, which is a critical part of the low temperature Co fired ceramics process. Through a study on densification process, the phase transformation and microstructure can be revealed. Its composites typically consist of CaO-Al2O3-B2O3-SiO2 glass and α-Al2O3 powders of average particle size (D50=3.49 mm). The sintering behavior, phase evaluation, sintered morphology, and microwave dielectric properties were investigated. In the fire range of 800 to 900 ℃, the composites were crystallized after completion of densification. It is found that the composites start to densify at 825 ℃, simultaneously, the dielectric constant (εr) reaches its maximum. With increasing heat-treatment temperatures, due to the loose microstructure of the material, tanδ increases slightly. The last of the sintered samples were identified as partly Anorthite at 850 ℃. At that temperature it has εr of 7.9 and tanδ less than 1×10-3, and can be used as a promising LTCC material.     

Phase structure and electrical properties of La<Subscript>2</Subscript>O<Subscript>3</Subscript>-doped BiInO<Subscript>3</Subscript>-PbTiO<Subscript>3</Subscript> ceramics with high curie temperature

The phase structure and electrical properties of pure and La2O3-doped Bi-InO3-PbTiO3 （BI-PT） ceramics were studied respectively. In （1 -x）BI-xPT （x=0.72-0.80） ceramics, the stability of tetragonal phase increased with increasing x, and pure perovskite structure was obtained for x=-0.80 ceramics. The phase transition temperature range was between 575 ℃ and 600 ℃ for x=0.72-0.80 ceramics, higher than that of PT （-490 ℃）. The c/a ratio almost linearly decreased with increasing La2O3 content in x-0.80 ceramics. It is believed that Pb^2＋ vacancies were formed by La^3＋ substituting Pb^2＋ in La2O3-doped BI-PT ceramics. Tc shifted to lower temperature by 30 ℃/mol% La2O3. The maximum dielectric constant 8557 around 559 ℃ was exhibited in 0.5mol%-doped BI-0.80PT ceramics. La2O3-doped ceramics could be poled resulting from decreasing of c/a ratio and improving of dielectric loss and resistivity. The maximum piezoelectric coefficient d33 was 12 pC/N for 2mol%-doped BI-0.80PT ceramics.     

Preparation, Characterization and Dielectric Property of Sr5 LaTi3 Nb7O30 Ceramic

Sr5LaTi3Nb7O30 ceramic was prepared by the conventional high temperature solid-state reaction route. The sintered samples were characterized by X-ray diffraction, scanning electron microscopy ( SEM ), differential thermal calorimetry ( DSC ) and dielectric measurements. The results show Sr5LaTi3Nb7O30 belongs to paraclectric phase of filled tetrngonal TB structure at room temperature, and undergoes a diffuse phase transition in the temperature range of -54-34℃ . And Sr5LaTi3Nb7O30 ceramic shows a high dielectric constant of 479 with a low dielectric loss of 0.005 at 1MHz . In comparison with Ba-based ceramics with TB structure, the temperature coefficients of the dielectric constant ( τt ) is significantly reduced.     

Effect of sintering aid CuO-MnO2 on dielectric properties of 0.5Ba(Mg1/3Nb2/3)O3-0.5Ba(Ni1/3Nb2/3)O3 ceramics

Microstructures and microwave dielectric properties of 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics with x wt% CuO−x wt% MnO₂ additions (x=0.25–1) prepared by conventional solid-state route were investigated. It is found that low level-doping of CuO-MnO₂ can significantly improve the density of the specimens and their microwave dielectric properties. The relative density of 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics can be increased by 95% sintering at 1 330 °C due to the liquid phase effect. The second phase is not observed in ceramics with CuO-MnO₂ addition. The parameter ε _r increases with increasing sintering temperature, and Q _f is effectively promoted by CuO-MnO₂ addition. Higher CuO-MnO₂ content would make τ_f value more positive. Meanwhile, ε _r value of 30.5, Q _f value of 63 200 GHz and τ _f value of 0.5 ppm/°C were obtained for 0.5Ba(Mg_1/3Nb_2/3)O₃-0.5Ba(Ni_1/3Nb_2/3)O₃ ceramics with 0.5 wt% CuO-0.5 wt% MnO₂ addition sintered at 1 330 °C for 4 h.     

Synthesis and Dielectric Properties of New Niobate BiTi3Nb7O30

A new niobate Ba5 BiTi3Nb7O30 was synthesized by the solid-state reaction. It was characterized by X-ray diffraction and dielectric constant measurements. The results show that Ba5BiTi3Nb7O30 is paraelectric at room temperature and belongs to tetragonal 4/ mmm symmetry with unit cell parameters a = 1.25020 nm, c =0.39704 nm. Ba5BiTi3Nb7O30 has only one phase transition, paraelectric to ferroelectric, below 0℃.     

Preparation and piezoelectric properties of CuO-added (Ag<Subscript>0.75</Subscript>Li<Subscript>0.1</Subscript>Na<Subscript>0.1</Subscript>K<Subscript>0.05</Subscript>)NbO<Subscript>3</Subscript> lead-free ceramics

CuO-doped (Ag_0.75Li_0.1Na_0.1K_0.05)NbO₃ (ALNKN-xCuO, x = 0–2mol%) lead-free piezoelectric ceramics were prepared by the solid-state reaction method in air atmosphere. The effects of CuO addition on the phase structure, microstructure, and piezoelectric properties of the ceramics were investigated. The experimental results show that the ALNKN ceramics without doping CuO possess rhombohedral phase along with K2Nb6O16-type phase and metallic silver phase. For all of the CuO-doped ALNKN ceramics, a pure perovskite structure with the orthorhombic phase was obtained by enclosing the samples in a corundum tube. A homogeneous microstructure with the grain size of about 1 μm was formed for the ceramics with 0.5mol% CuO. The grain size increases with increasing amount of CuO. The temperature dependence of dielectric properties indicates that the ferroelectric phase of the ALNKN-xCuO ceramics becomes less stable with the addition of CuO. The ceramics with x = 1mol% exhibit relatively good electrical properties along with a high Curie temperature. These results will provide a helpful guidance to preparing other AN-based ceramics by solid-state reaction method in air atmosphere.     

Microstructure and microwave dielectric properties of CaO-B2O3-SiO2 glass ceramics with various B2O3 contents

The effects of B2O3 addition on both the sintering behavior and microwave dielectric properties of CaO-B2O3-SiO2 (CBS) glass ceramics were investigated by Fourier transform infrared spectroscopy (FTIR),X-ray diffractometry (XRD) and scanning electron microscopy (SEM).The results show that the increasing amount of B2O3 causes the increase of the contents of [BO3],[BO4] and [SiO4],which deduces the increase of CaB2O4 and α-SiO2 and the decrease of CaSiO3 correspondingly.No new phase is observed throughout the...     

Dielectric Properties of B2O3 Doped MgTiO3-CaTiO3 System Ceramics

The dielectric ceramics with a main crystal phase of MGTiO3 and additional crystal phase of CaTiO3 were prepared by the conventional electronic ceramics technology .the strucures of MgTiO3 are ilmenitetype,and belong to hexagonal syngony.the ratio of MgTiO3 to Ca TiO3 doping on the dielectric properties of MGTiO3-CaTiO3(MCT)ceranics were inrestigated.the addition of B2O3 decreases the sintering temperatnre and results in rapid desification without obrious negative effect on the Q values of the system(Q=1/tan ).B2O3 exists as liquid phase in the sintering process,promoting the reactions as a singering agent.     

Effects of NaNbO3-Co2O3 Co-additive on the Properties of PZN-PZT Ceramics

NaNbO3-Co2O3 co-added PZN-PZT （PZCNNT） ceramics were prepared using conventional solid state reaction. The piezoelectric and dielectric properties were measured. The experimental results show that the addition of 0.3mo1% Co2O3 leads to low dielectric loss （tgδ） in PZCNNT ceramics and the proper addition of NaNbO3 not only improves piezoelectric properties but also decreases intensively dielectric loss and mechanical loss. The optimal ceramic having d33=310 pC/N, kp=0.59, εr=985, tgδ=0.0034, Qm=1380 was obtained.     

Structure and Electrical Properties of （Na0.5Bi0.5）0.94Ba0.06TiO3 Ceramicwith0.5wt% of MnO

The structure and electrical properties of （Na0.5Bi0.5）0.94Ba0.06TiO3 ceramic doped with 0.5 wt% of MnO were investigated in comparison with those of （Na0.5Bi0.5）0.94Ba0.06TiO3 ceramic. It was ascertained that the MnO addition did not cause remarkable change in crystal structure and microstructure. The MnO addition mainly displayed a hard effect on the electrical properties, an increase of coercive field （E） and mechanical quality factor （Qm） together with a decrease of dielectric constant （εr） and piezoelectric constant （d33）. An enhancement of electromechanical coupling factor （kp） with the MnO addition was obtained too. An essential relation between the piezoelectric properties and ferroelectric nature of the ceramics was detected. It was found that the piezoelectric properties of the ceramics highly depended on the corporative contribution of remanent polarization （Pt） and coercive field.     

The Effect of Bi2O3 on the Structure and Microwave Dielectric Properties of Ba6-3xNd8＋2xTi18O54 System（x=2/3）

The structures and dielectric properties of Ba6-3xNd8＋2xTi18O54 system（x=2/3） doped with different contents of Bi2O3, whose final molecular formula is Ba6-3x（Nd1-yBiy）8＋2xTi18O54 were investigated. It is indicated that the dielectric constant increases greatly whereas Q value（f0=4 GHz） decreases with the increase of Bi2O3 content. However, the temperature coefficient could be controlled below 0±30×10^-6/℃ in the experiment. These phenomena are related to the appearance of a new phase, Bi4Ti3O12, which has high dielectric constant. Also, that Bi^3＋（0.13 nm） substitutes for Nd^3＋（0.099 5 nm） will increase the unit cell volume, which will lead to the enlargement of the octahedron B site occupied by Ti^4＋. So the spontaneous polarization of Ti^4＋ ions will be strengthened. Besides, Bi^3＋ will fill up some vacancies which Ba^2＋ or Nd^3＋ ions leave in two A1 sites and four A2 sites. More positive ions polarize, which also contributes to higher dielectric constant. The samples got with the optimium properties are sintered at 1 200 ℃ for 4 h, when y=0.25, ε≈110, Q≈5 400（f0=4 GHz）, TCC=-4.7×10^-6/℃; When y=0.3, ε≈120, Q≈5 000（f0=4 GHz）, TCC=-24×10^-6/℃.     

Microwave sintering of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-ZrO<Subscript>2</Subscript>-WC-Co cermets

Composite powders of nanocrystalline WC-10Co (15wt%),Y2O3 (8mol%) stabilized nanocrystalline ZrO2 (30wt%),industrial cobalt powder (4.5wt%) and submicron Al2O3 (55wt%) composite powders were fabricated by high-energy ball-milling process.The nanocomposite powders were consolidated by microwave sintering process at temperature ranged 1300℃-1550℃ for 15min,respectively.The optimum consolidation conditions,such as temperature,were researched during microwave sintering process.Vickers Hardness of the consolidated cermets was measured by using a Vickers indentation test,and density of specimens was also determined by Archimedes’ principle.Microwave sintering process could not only increase the density of Al2O3-ZrO2-WC-Co cermets and reduce the porosity,but also inhibit abnormal grain growth.     

Dielectric Properties of Ag（Nb1-xTax）O3 and Bi2O3 Doped Ag（Nb1-xTax）O3 Ceramics

Dielectric properties of Ag（Nb1-xTa）O3 and Bi2O3 doped Ag（Nb1-xTax）O3 solid solutions were investigated. The results show that with the increase of Ta content （x）, the sintering temperature increased, and the dielectric loss （tanδ） and the temperature coefficient （αc） decreased. Ag（Nb1-xa）O3 （x=0.4） ceramics sintered at 1 100℃ had the highest permittivity （516.8） and a lower tanδ （0.0021） at 1 MHz, and its temperature coefficient was about 191 ppm/℃. The sintering temperature of Ag（Nb1-xTa）O3 （x=0.4） was lowered by the addition of Bi2O3, and its dielectric properties were improved. Ag（Nb0.6Ta0.4）O3 ceramics with 2.5 wt% Bi203 addition presented the optimum dielectric properties （ε=566, tanδ= 0.0007 and αc≈0ppm/℃） （1 MHz）,     

Synthesis and Characteristic of a New Niobate： BasNaCr0.5Nb9.5O30

A new niobate crystal was synthesized for the first time in BaO-NaO-Cr2O3-Nb2O3 system by the solid state reacition and the flux method. The new compound was studied by X-ray diffraction, electron probe, X-ray microanalysis, chemical analysis and SEM. The result of X-ray powder diffraction shows that Ba5NaCr0.5 Nb9.5O30 belongs to the tetragonal tungsten bronze structure, with space group P4 bin(100) and lattice parameters a=b=12. 4450 (2) A, c=3.9931 (2) A and Z=1. The X-ray powder diffraction lines of the compound were well indexed.     

Phase Structure and Dielectric Properties of Doped BaTiO3 Ceramics

The effects of two rare earth oxides such as CeO2 and Sm2O3 on the phase structure and dielectric properties of BaTiO3 ceramic were investigated. Results indicate that the dielectric constant of this system will increase greatly with the increasing content of these two oxides, and Ce^4＋ substitutes for Ba^2＋ located at A-site in ABO3 structure. Quantitative XRD analysis shows that c/a ratio in the sample with addition of CeO2 will increase, which implies the increase of tetragonality in system, causing the augment of dielectric constant, and the decrease of the crystal＇s geometrical symmetry results in curie-temperature moving towards low temperature; Sm^3＋（0.096 nm） substitutes for Ba^2＋（0.135 nm） possessing larger radius in A-site and the electrovalency in A-site increases, the mutual effect is strengthened, so the polarization is enhanced, and the dielectric constant increases notablely.     

Crystallization and Electrical Properties of （Ba0.4Pb0.3）Sr0.3TiO3 Thin Film by Pulsed Laser Deposition

（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.