一种全新的高性能n－JFET和n－p－n兼容工艺

本文提出了一种全新的ｎ－ＪＦＥＴ和ｎ－ｐ－ｎ兼容工艺，采用二次外延实现了ＪＦＥＴ和ｎ－ｐ－ｎ的隔离。介绍了工艺流程，并对工艺上第一外延的厚度和浓度、二次硼埋浓度以及隔离的温度和时间对ｎ－ＪＦＥＴ的Ｖ＿ｐ和ｎ－ｐ－ｎ管的性能的影响进行了讨论。采用这种工艺研制出了Ｖ＿ｐ达３．５～４．５Ｖ，Ｉ＿（ＤＳＳ）＝１５ｍＡ的ＪＦＥＴ和ｆ＿Ｔ＝８００ＭＨｚ，β＝１００，ＢＶ＿（ｃｅｏ）≥２５Ｖ的ｎ－ｐ－ｎ管，并成功运用于调制解调开关侧音放大器中。     

X波段功率AlGaAs／InGaAs p－n－p异质结双极晶体管（HBT）

Ｘ波段功率ＡｌＧａＡｓ／ＩｎＧａＡｓｐ－ｎ－ｐ异质结双极晶体管（ＨＢＴ）＝Ｘ－ｂａｎｄｐｏｗｅｒＡｌＧａＡｓ／Ｉｎ－ＧａＡｓｐ－ｎ－ｐＨＢＴ’ｓ［刊，英］／Ｈｉｌｌ．Ｄ．Ｇ．…／／ＩＥＥＥＥｌｅｃｔｒｏｎＤｅｖｉｃｅＬｅｔｔｅｒｓ．１９９３．１４（４...     

RNO栅极介质通过再氧化步骤的p沟热载流子最佳化

ＲＮＯ栅极介质通过再氧化步骤的ｐ沟热载流子最佳化＝ｐ－Ｃｈａｎｎａｌｂｏｔ－ｃａｒｒｉｅｒｏｐｔｉｍｉｚａ－ｔｉｏｎｏｆＲＮＯｇａｔｅｄｉｅｌｅｃｔｒｉｃｓｔｈｒｏｕｇｈｔｈｅｒｅｏｘｉｄａｔｉｏｎｓｔｅｐ［刊，英］／Ｄｏｙｉｅ，Ｂ．Ｓ．…／／ＩＥＥ...     

在Si衬底上生长高跨导p型Ge沟MODFET

在Ｓｉ衬底上生长高跨导ｐ型Ｇｅ沟ＭＯＤＦＥＴ＝ｐ－ＴｙｐｅＧｅ－ｃｈａｎｎｅｌＭＯＤＦＥＴ’ｓｗｉｔｈｈｉｇｈｔｒａｎｓｃｏｎｄｕｃｔａｎｃｅｇｒｏｗｎｏｎＳｉｓｕｂｓｔｒａｔｅｓ［刊，英］／Ｋｏｎｉｇ，Ｕ．…／／ＩＥＥＥＥｌｅｃｔｒｏｎＤｅｖｉｃｅ...     

SiC器件──物理与数值模拟

从文献中摘出了６Ｈ碳化硅（６Ｈ～ＳｉＣ）的重要材料参数并应用到２－Ｄ器件模拟程序ＰＩＳＣＥＳ和ＢＲＥＡＫＤＯＷＮ及１－Ｄ程序ＯＳＳＩ中。６Ｈ－ＳｉＣｐ－ｎ结的模拟揭示了由于反向电流密度较低的缘故相应器件在高达１０００Ｋ温度下应用的可能性。６Ｈ－ＳｉＣ１２００Ｖｐ－ｎ￣（－）－ｎ￣（＋）二极管与相应硅（Ｓｉ）二极管的比较说明６Ｈ－ＳｉＣ二极管开关性能较高，同时由于６Ｈ－ＳｉＣ　ｐ－ｎ结内建电压较高，其正向功率损耗比Ｓｉ略高。这种缺点可用６Ｈ－ＳｉＣ肖特基二极管克服。Ｓｉ、３Ｃ－ＳｉＣ和６Ｈ－ＳｉＣ垂直功率ＭＯＳＦＥＴ的开态电阻通过解析计算进行了比较。在室温下，这种ＳｉＣＭＯＳＦＥＴ的开态电阻低于０．１Ωｃｍ￣２，可在高达５０００Ｖ阻塞能力下工作，而ＳｉＭＯＳＦＥＴ则限于５００Ｖ以下。这一点通过用ＰＩＳＣＥＳ计算６Ｈ－ＳｉＣ１２００ＶＭＯＳ－ＦＥＴ的特性得以验证。在低于２００Ｖ的电压区，由于硅的迁移率较高且阈值电压较低，故性能更优良。在上述的６Ｈ－ＳｉＣＭＯＳＦＥＴ的栅氧化层和用于钝化平面结的场板氧化层中存在着大约４×１０￣６Ｖ／ｃｍ的电场。为了研究ＳｉＣ器件的高频性能，提出了６Ｈ－ＳｉＣ发射极的异质双极晶体管?     

SiC器件—物理与数值模拟

从文献中摘出了６Ｈ碳化硅（６Ｈ－ＳｉＣ）的重要材料参数并应用到２－Ｄ器件模拟程序ＰＩＳＣＥＳ和ＢＲＥＡＫＤＯＷＮ及１－Ｄ程序ＯＳＳＩ中。６Ｈ－ＳｉＣｐ－ｎ结的模拟揭示了由于反向电流密度较低的缘故相应器件在高达１０００Ｋ温度下应用的可能性。６Ｈ－ＳｉＣ１２００Ｖｐ－ｎ＾－１二极管与相应硅（Ｓｉ）二极管的比较说明６Ｈ－ＳｉＣ二管开关性能较高，同时由于６Ｈ－ＳｉＣｐ－ｎ结内建电压较高，其正向功率损耗比Ｓ     

新型复相陶瓷刀具材料JX－2－Ⅰ的界面结构及其对材料性能的影响

本文利用ＴＥＭ研究了新型复相陶瓷刀具材料Ｊｘ－２－Ⅰ的界面结构，结果表明，在Ｊｘ－２－Ⅰ中Ａｌ＿２Ｏ＿３／ＳｉＣｗ（氧化铝／碳化硅晶须）界面和Ａｌ＿２Ｏ＿３／ＳｉＣｐ（碳化硅颗粒）界面结合良好，形成了具有较高强度的微观结构；发现在ＳｉＣｗ、ＳｉＣｐ和Ａｌ＿２Ｏ＿３晶粒上均有位错产生，在ＳｉＣｐ和Ａｌ＿２Ｏ＿３上有孪晶产生；分析表明，位错和孪晶的产生均吸收大量的断裂能，提高材料的断裂韧性，改善ＪＸ－２－Ⅰ材料的整体性能。     

InP衬底上的p－沟和n－沟异质结绝缘栅场效应晶体管

在ＩｎＰ衬底上用通常的晶格匹配（ｙ＝０．５３）和晶格失配（ｙ＞０．５３）Ｉｎ＿（０．５３）Ａｌ＿０．４８Ａｓ／Ｉｎ＿ｙＧａ＿（１－ｙ）Ａｓ层结构同时制作ｐ－沟和ｎ－沟曾强型异质结绝缘栅场效应晶体管（ＨＩＧＦＥＴ）。获得１μｍ栅长ｅ型ｐ－沟ＨＩＧＦＥＴ，其阈值电压约０．６６Ｖ，夹断尖锐，栅二极管开启电压０．９Ｖ，室温时非本征跨导＞２０ｍＳ／ｍｍ。相邻的（互补的）ｎ－小沟ＨＩＧＦＥＴ也显示ｅ型工作（阈值Ｖ＿ｔｈ＝０．１６Ｖ），低的漏电，０．９Ｖ栅开启电压和高跨导（ｇｍ＞３２０ｍＳ／ｍｍ）。这是首次报道在ＩｎＰ衬底上同时制作具有适合作互补电路特性的ｐ＿和ｎ－沟ＨＩＧＦＥＴ。     

InP衬底上的p—沟和n—沟异质结绝缘栅场效应晶体管

在ＩｎＰ衬底上用通常用晶格匹配（ｙ＝０．５３）和晶格失配（ｙ〉０．５３）Ｉｎ０．５３Ａｌ０．４６Ａｓ／ＩｎｙＧａ（１－ｙ）Ａｓ层结构同时制作ｐ－沟和ｎ－沟增强型异质结绝缘栅场效应晶体管（ＨＩＧＦＥＴ）。获得１μｍ栅长ｅ型ｐ－沟ＨＩＧＦＥＴ，其阈值电压约０．６６Ｖ，夹断尖锐，栅二极管开启电压０．９Ｖ，室温时非本征跨导〉２０ｍＳ／ｍｍ。相邻的（互补的）ｎ－沟ＨＩＧＦＥＴ也显示ｅ型工作（阈值Ｖｔｈ＝０．     

半导体工艺技术

半导体工艺技术ＷＤ９４５１７制作２５．４ｐｓＥＣＬ的深亚微米超自对准硅双极工艺＝Ｄｅｅｐｓｕｂｍｉｃｒｏｍｅｌｅｒｓｕｐｅｒｓｅｌｆ－ａｌｉｇｎｅｄＳｉｂｉｐｏｌａｒｔｅｃｈｎｏｌｏｇｙｗｉｔｈ２５．４ｐｓＥＣＬ［刊，英］／Ｋｏｎａｋａ，Ｓ．…／／Ｉ...     

Impact of adhesive rheology on stress-distortion of bonded plastic substrates for flexible electronics applications

For fabrication of flexible electronics using standard microelectronics toolsets, a temporary bond-debond method has been developed that requires minimization of the distortion of bonded flexible substrate and bow of bonded system (flexible substrate-adhesive-carrier) during processing. To elucidate the critical parameters of the adhesive used in the bonding that control the stress (bow) and distortion, adhesives with different viscoelastic properties are examined systematically. By blending a high modulus adhesive into a low modulus adhesive, the storage modulus, loss modulus and loss factor of the adhesive can be tuned by orders of magnitude. Detailed examination of the impact of these three rheological parameters on the stress and distortion of bonded system reveals that the relative viscoelastic flow properties of the bonding adhesive to that of the bonded flexible substrate are directly correlated to bow and distortion. When the loss factor of the adhesive is less than that for the plastic substrate, precise registration of layers during photolithography is observed. These results provide insight into the rheological parameters critical to the adhesive formulations for the temporary bond-debond method in the fabrication of flexible electronics.     

导电胶性能对器件分层的影响

近年来客户对器件可靠性要求越来越高,而分层对可靠性的影响至关重要。跟分层密切相关的两种主要封装材料分别为塑封料和导电胶,文中重点对LQFP类导电胶进行性能比较、分层试验和相关性分析,明确了导电胶的相关性能对器件分层的影响程度,从而选择合适的导电胶来改善和提高器件的可靠性。     

HgCdTe焦平面红外探测器封装中的芯片粘接技术

针对HgCdTe焦平面红外探测器封装的特殊性,提出了芯片粘接胶的选用原则,影响粘接质量的主要因素,以及粘接工艺优化方法。提出了用于封装HgCdTe MW 320×256探测器的低温胶X1,并对该胶做了一系列可靠性实验。实验证明,低温胶X1满足该探测器的封装要求。     

贴片胶的特性与使用方法

主要介绍贴片胶的特性，在各种工艺下的使用方法及其使用中出现的不良现象与对策等内容，并简要分析了贴片胶的未来发展趋势。     

电子组装中胶黏剂及其涂覆工艺的选择(待续)

胶黏剂在混装及双面回流焊接工艺中主要是把元器件固定于电路板底面,以便进行波峰焊或双面回流焊工艺.常用的胶黏剂涂覆方法包括针转移法、点涂法和丝网印刷法/模板印刷法.模板印刷法近年来在大批量高速流水线生产中得到了较为广泛的应用.主要介绍了胶黏剂的涂覆工艺及选择、胶黏剂的性能及选择和胶黏剂的相关工艺设计,并对其进行了较为详细的分析.     

电子组装中胶黏剂及其涂覆工艺的选择（待续）

胶黏剂在混装及双面回流焊接工艺中主要是把元器件固定于电路板底面,以便进行波峰焊或双面回流焊工艺.常用的胶黏剂涂覆方法包括针转移法、点涂法和丝网印刷法/模板印刷法.模板印刷法近年来在大批量高速流水线生产中得到了较为广泛的应用.主要介绍了胶黏剂的涂覆工艺及选择、胶黏剂的性能及选择和胶黏剂的相关工艺设计,并对其进行了较为详细的分析.     

Mussel‐Inspired Hydrogels for Self‐Adhesive Bioelectronics

Wearable and implantable bioelectronics are receiving a great deal of attention because they offer huge promise in personalized healthcare. Currently available bioelectronics generally rely on external aids to form an attachment to the human body, which leads to unstable performance in practical applications. Self‐adhesive bioelectronics are highly desirable for ameliorating these concerns by offering reliable and conformal contact with tissue, and stability and fidelity in the signal detection. However, achieving adequate and long‐term self‐adhesion to soft and wet biological tissues has been a daunting challenge. Recently, mussel‐inspired hydrogels have emerged as promising candidates for the design of self‐adhesive bioelectronics. In addition to self‐adhesiveness, the mussel‐inspired chemistry offers a unique pathway for integrating multiple functional properties to all‐in‐one bioelectronic devices, which have great implications for healthcare applications. In this report, the recent progress in the area of mussel‐inspired self‐adhesive bioelectronics is highlighted by specifically discussing: 1) adhesion mechanism of mussels, 2) mussel‐inspired hydrogels with long‐term and repeatable adhesion, 3) the recent advance in development of hydrogel bioelectronics by reconciling self‐adhesiveness and additional properties including conductivity, toughness, transparency, self‐healing, antibacterial properties, and tolerance to extreme environment, and 4) the challenges and prospects for the future design of the mussel‐inspired self‐adhesive bioelectronics.     

Role of bonding time and temperature on the physical properties of coupled anisotropic conductive-nonconductive adhesive film for flip chip on glass technology

Using thermosetting epoxy based conductive adhesive films for the flip chip interconnect possess a great deal of attractions to the electronics manufacturing industries due to the ever increasing demands for miniaturized electronic products. Adhesive manufacturers have taken many attempts over the last decade to produce a number of types of adhesives and the coupled anisotropic conductive-nonconductive adhesive film is one of them. The successful formation of the flip chip interconnection using this particular type of adhesive depends on, among factors, how the physical properties of the adhesive changes during the bonding process. Experimental measurements of the temperature in the adhesive have revealed that the temperature becomes very close to the required maximum bonding temperature within the first 1 s of the bonding time. The higher the bonding temperature the faster the ramp up of temperature is. A dynamic mechanical analysis (DMA) has been carried out to investigate the nature of the changes of the physical properties of the coupled anisotropic conductive-nonconductive adhesive film for a range of bonding parameters. Adhesive samples that are pre-cured at 170, 190 and 210 °C for 3, 5 and 10 s have been analyzed using a DMA instrument. The results have revealed that the glass transition temperature of this type of adhesive increases with the increase in the bonding time for the bonding temperatures that have been used in this work. For the curing time of 3 and 5 s, the maximum glass transition temperature increases with the increase in the bonding temperature, but for the curing time of 10 s the maximum glass transition temperature has been observed in the sample which is cured at 190 °C. Based on these results it has been concluded that the optimal bonding temperature and time for this kind of adhesive are 190 °C and 10 s, respectively.     

The Interplay of Modulus,Strength, and Ductility in Adhesive Design Using Biomimetic Polymer Chemistry

High‐performance adhesives require mechanical properties tuned to demands of the surroundings. A mismatch in stiffness between substrate and adhesive leads to stress concentrations and fracture when the bonding is subjected to mechanical load. Balancing material strength versus ductility, as well as considering the relationship between adhesive modulus and substrate modulus, creates stronger joints. However, a detailed understanding of how these properties interplay is lacking. Here, a biomimetic terpolymer is altered systematically to identify regions of optimal bonding. Mechanical properties of these terpolymers are tailored by controlling the amount of a methyl methacrylate stiff monomer versus a similar monomer containing flexible poly(ethylene glycol) chains. Dopamine methacrylamide, the cross‐linking monomer, is a catechol moiety analogous to 3,4‐dihydroxyphenylalanine, a key component in the adhesive proteins of marine mussels. Bulk adhesion of this family of terpolymers is tested on metal and plastic substrates. Incorporating higher amounts of poly(ethylene glycol) into the terpolymer introduces flexibility and ductility. By taking a systematic approach to polymer design, the region in which material strength and ductility are balanced in relation to the substrate modulus is found, thereby yielding the most robust joints.     

红外光学材料胶粘剂力学性能研究与试验

胶接是一种较为常用的支撑方式,经常被用于红外透镜和镜框之间的连接,因此研究胶粘剂在各种环境下的力学性能对提高红外光学遥感器的环境适应能力具有极其重要的价值。选择锗和钛合金、硅和殷钢作为两组研究对象,使用环氧胶进行胶接,通过拉伸和剪切测试试验研究其力学性能。首先,介绍了力学性能的测试方法和流程。之后,在仿真分析的基础上,在三种不同环境下对两组测试对象分别进行拉伸和剪切强度测试,试验数据离散性较小,可信度较高。最后,对试验数据进行总结,发现环氧胶拉伸强度是剪切强度的1.4倍,可满足不同材料间胶接固定,具有良好环境适应性。所得到测试数据可作为红外光学遥感器的设计依据使用,应用价值较高。