离子束辅助沉积立方氮化硼的试验研究

本文运用离子束辅助沉积法在硅片上制备了立方氮化硼薄膜 ,主要研究了辅助能量、辅助束流及辅助束中氮气含量等参数对膜中立方氮化硼 (c -BN)含量的影响。用红外光谱 (FTIR)及光电子能谱 (XPS)分析技术对得到的c -BN膜进行了分析。结果表明 :(1)合适的离子辅助能量能够获得c -BN含量高的薄膜。(2 )膜中c -BN的含量随空中N2 含量的提高而增加。 (3)辅助束流对薄膜的形成影响不明显     

HI-13串列加速器重离子辐照核孔膜的实验研究

扼要介绍了几年来在HI-13串列加速器上开展的辐照核孔膜的实验研究的一些结果,包括重离子种类的选择,能量和束流强度对核孔膜指标的影响以及提高辐照均匀性的措施等。实验用膜材为10～30μm厚PET(聚酯)薄膜,束流为3.5～4.5MeV/N的S束,核孔     

HI-13串列加速器重离子辐照核孔膜的实验研究

扼要介绍了几年来在HI-13串列加速器上开展的辐照核孔膜的实验研究的一些结果,包括重离子种类的选择,能量和束流强度对核孔膜指标的影响以及提高辐照均匀性的措施等。实验用膜材为10～30μm厚PET(聚酯)薄膜,束流为3.5～4.5MeV/N的S束,核孔膜孔密度为10~5～10~8cm~(-2),均匀性为80％左右。     

离子束辅助沉积制备TiN/Si3N4纳米超硬膜的工艺研究

采用离子束辅助沉积法(Ion beam assisted deposition,IBAD)在单晶硅片上进行沉积制备了TiN/Si3N4纳米复合超硬薄膜;研究了辅助束流、轰击能量和Ti:Si靶面积比等工艺参数对TiN/Si3N4超硬纳米复合薄膜性能的影响.此外采用纳米硬度计、光电子能谱(X-ray photoelectron spectrum,XPS)和x射线衍射分析(X-raydiffraction,XRD)方法研究了纳米复合薄膜的性能、成分与组织结构;采用原子力显微镜(Atomic forcemicroscopy,AFM)分析了薄膜的表面形貌,并初步探讨了TiN/Si3N4纳米复合超硬薄膜的生长机理.     

重离子同步加速器中剥离累积时碳膜对束流的影响研究

治癌专用重离子加速器HITFiL中同步加速器的注入系统采用了剥离注入方式。剥离膜的存在使束流克服了刘维定理的限制从而累积达到较高流强,但粒子多次穿越剥离膜也会造成束流损失并使得束流品质变坏,其中包括:1)粒子从膜原子中俘获电子使粒子电荷态发生改变而导致束流损失;2)剥离膜对束流的多重库仑散射导致束流发射度增长;3)束流在剥离膜中的能损及能量岐离导致束流中心动量减少并使得动量分散增长。本文通过研究剥离注入过程中粒子与物质的相互作用规律,用蒙特卡罗方法建立了剥离膜与粒子的作用模型,在对ACCSIM程序改进的基础上研究了剥离膜对束流的影响。     

离子源及厚靶参数对氘氚反应中子源中子产额的影响

用厚靶氘氚(D-T)反应中子产额的计算方法模拟计算了入射氘离子能量为120 keV时D-T中子源的中子产额。研究了氘离子源产生的束流中单原子氘离子(D+)及双原子氘离子(D2+)比例对中子产额的影响。结果表明,提高D+比例,同时降低D2+比例将有效提高中子产额。另外还研究了不同靶膜材料及组分引起的中子产额变化。表明中子产额与靶膜中氚的含量成正比,与靶膜元素的原子质量成反比。同时分析讨论了离子源品质及靶参数对中子源整体性能的影响,得出离子源束流品质的提高对中子源整体的设计至关重要。最后,模拟计算了靶膜表面有氧化层情况下中子产额的变化,并与实验结果作了对比。在此基础上提出了一种新的靶设计方案,并对其物理可行性进行了研究。     

铀上激光辅助化学气相沉积镍薄膜研究

为防止金属铀的腐蚀,本文采用激光辅助化学气相沉积(LACVD)方法在铀上制备了镍薄膜。采用SEM、XRD分析了薄膜的形貌、物相以及界面特性,采用黏胶拉伸测试表征了膜-基结合性能,采用电化学极化法分析了薄膜的抗腐蚀性能。结果表明:压力和温度对化学气相沉积(CVD)方法制备镍薄膜的质量有较大的影响。随着基底温度和沉积气压的降低,薄膜变得致密、平整,质量提高。在优化的工艺条件165℃、3Pa下,CVD方法所得镍薄膜非常致密。采用LACVD方法时,激光能量为200mJ时所制得的薄膜致密,300mJ时膜变得粗糙。无激光辅助时,CVD方法所制得的薄膜较易剥落,激光辅助下所得薄膜的膜-基结合力较好。LACVD方法大幅提高了薄膜的抗腐蚀性能,抗腐蚀性能的提高主要源于激光辅助使薄膜致密化,提高了薄膜与基底的结合力。     

碳剥离膜的厚度对电荷态分布的影响

在SSC加速器的前束流输运线上探索碳剥离膜的厚度对被剥离后束流电荷态分布的影响,是本实验的目的。因为作为SSC的注入器,我们回旋加速器束流的引出能量较高,因此碳剥离膜的平衡厚度要求大大超过一般用在串列静电加速器头部所使用的碳膜厚度,有人曾用公式x(μg/cm~2)=5.9285+22.386w-1.1292w~2来估计碳膜的平衡厚度与能量之间的关系,误差范围为100％。式中,w以MeV/A为单位。为了研究碳剥离膜的厚度对束流电荷分布的影响我们进行了如下实验。     

用质子弹散符合测量方法分析薄膜中氢分布的蒙特卡罗研究

本文从离子与物质相互作用的基本原理出发,用蒙特卡罗方法模拟了用质子弹性散射符合分析方法分析表面含氢的几组不同厚度的金属薄膜样品的实验,详细介绍了模拟过程中影响深度分辨率的多种因素,如束流能量、能损歧离、角度歧离等。本文基于2×1.7MV串列静电加速器可以提供的质子束能量范围,通过模拟计算得到用能量为1.5 Me V的质子束分析厚度为1~3微米的铝膜,深度分辨可以达到0.2微米。本文还给出了内部含氢的多层铝膜的模拟结果,表明此方法可以很好地分析薄膜内部氢元素的深度分布。     

13 100MeV回旋加速器剥离引出系统研制

100MeV回旋加速器加速H^-离子，要求引出束流能量为75～100MeV、束流强度为200μA的质子束流，因此决定采用剥离引出。本工作依据100MeV主磁场数据和平衡轨道数据，通过理论研究，计算100MeV回旋加速器不同能量束流引出剥离点的位置；着重计算分析70～100MeV能量的束流剥离引出的光学特性；通过理论计算确定剥离膜各项参数；完成剥离靶及其伺服驱动装置的设计；对真空系统、控制系统等相关专业提出明确的工艺流程和技术要求。最终确定100MeV强流质子回旋加速器双向引出系统初步设计。     

Ions Bombardment in Thin Films and Surface Processing

Ions bombardment is very important in thin films and surface processing.The ion energy and ion flux are two improtant parameters in ion bombardment.The ion current density mainly dependent on the plasma density gives the number of energetic ions bombarding the substrate.The self-bias voltage in plasma sheath accelerates plasma ions towards the substrate.RF discharge can increase plasma density and RF bias can also provide the insulator substrate with a plasma sheath.In order to choose and control ion energy,ion density,the angle of incidence,and ion species,ion beam sources are used.New types of electrodeless ion sources(RF,MW,ECR-MW) have been introduced in detail,In the last,the effects of ion bombardment on thin films and surface processing are presented.     

动态离子束混合技术制备氧化铬薄膜的X射线光电子能谱与俄歇电子能谱研究

本文介绍的动态离子束混合技术制备氧化铬薄膜系在不锈钢基体上进行1keV氩离子束溅射沉积铬(同时通入一定量的O),并用100 keV的氩离子束或氧离子束轰击该样品.对两种离子束轰击形成的氧化铬薄膜进行了X射线光电子能谱(X-ray photoelectron spectroscopy,XPS)和俄歇电子能谱(Auger electron spectroscopy,AES)的分析研究.发现Ar 离子束制备的氧化铬薄膜主要是Cr2O3化合物,而O 离子束制备的氧化铬薄膜含有其它价态的铬氧化物.Ar 离子束制备氧化铬薄膜的污染碳少于O 离子束制备.与O 离子束制备相比较,相同能量的Ar 离子束轰击更有利于提高沉积的Cr原子与周围O2的反应性;Ar 离子束制备的氧化铬薄膜过渡层的厚1/3左右,较厚的过渡层显示了制备的薄膜具有较好的附着力.     

双离子束技术沉积锆氧化物薄膜及其背散射分析

采用双离子束技术在Ｓｉ（１００）衬底上沉积锆氧化物薄膜。由背散射（ＲＢＳ）技术对形成薄膜进行了剖面测量。结果表明，在相同的溅射锆沉积速率条件下，不同流强的氧离子轰击所形成的薄膜，其组成也不同。深度剖面的Ｏ／Ｚｒ原子比值为不同的常数表征了不同价态的锆氧化物的生成。最后作了相应的讨论。     

Structural characteristics of rutile films prepared by direct deposition and neon ion beam assisted deposition

In this article, titanium dioxide films prepared by neon ion beam assisted deposition (IBAD) in an oxygen environment were investigated. The deposition rate was varied from 0.2 to 0.4 nm/s while the current density and ion energy were kept at 20 μA/cm² and 40 keV. The structural characteristics of all films were studied by X-ray diffraction and Raman spectroscopy. Results show that all the films exhibit a rutile phase. The location of (2 0 0) diffraction peaks deviated from the standard value. Simultaneously, the relative intensity of (2 0 0)/(1 1 0) peaks decreases with increasing evaporation rate. All results are discussed in terms of surface free energy and ion channeling effects.     

A simple model for quantifying the degree of layer-by-layer growth in low energy ion deposition of thin films

Layer-by-layer growth of thin films can be promoted by using low energy ion deposition (LEID) techniques. The basic process affecting the growth are often quite diverse, but often the ion impact induced inter layer mass transfer processes due to adatom insertion to lower step edges or pile-ups to step edges above dominate. In this paper we propose a simple phenomenological model which describes the growth of thin films in LEID under these conditions. The model makes possible to distinguish the dominant growth, the detection of the transition from the 3D growth to 2D growth, and it can be used to quantify the degree of layer-by-layer growth. The model contains only two parameters, which can be phenomenologically related to the properties of the bombarding ion beam.     

Properties of Ion Beams Generated by Nitrogen Plasma Focus

Numerical experiments have been systematically carried out using the modified Lee model code on various plasma focus devices operated with nitrogen gas. The ion beam properties (ion beam energy, ion beam flux, ion beam fluence, beam ion number, ion beam current, power flow density, and damage factor) of the plasma focus have been studied versus gas pressure for each plasma focus device. The results show that, for these studied plasma focus devices, the mean ion energies decrease with increasing gas pressure, while the beam ion number increases with higher pressure. The fluence, flux, ion current, power flow density and damage factor have maximum values at the optimum pressure. It is shown that, the maximum power flow densities range from 10¹² to 10¹⁴ W m^?2 and the damage factor values reach almost 10⁹–10¹¹ W m^?2 s^0.5. The obtained results provide much needed benchmark reference values and scaling trends for ion beams of a plasma focus operated in nitrogen gas. These results could be used as an indicator for ion properties emitted from nitrogen plasma focus for various applications including material processing.     

Influence of additional UV-light illumination on preparation of TiN by ion beam assisted deposition

Titanium nitride films were prepared by a newly developed photon and ion beam assisted deposition system at room temperature. Titanium was deposited on Si(111) in a controlled nitrogen environment and simultaneously bombarded with low-energy N ions or illuminated with UV-light. The influence of UV-light illumination during deposition is compared with the influence of ion bombardment on film properties like structure, topography and composition, measured by XRD, AFM and ERD, respectively. The results demonstrate that photon assisted deposition (PHAD) is also a good method to modify film characteristics like ion beam assisted deposition (IBAD).     

离子束分解卤化物涂层镀膜技术的初步实验

离子束轰击化合物涂层镀膜是七十年代发展起来的一种新方法。本文叙述了用这种方法在硅片和玻璃片上形成钯膜的过程,并给出了用扫描电子显微镜和俄歇电子谱仪观察分析的结果。最后讨论了镀膜的机理和可能的应用。     

硼缓冲注入层对氮化硼薄膜生长的影响

采用射频磁控溅射法在注硼的硅和高速钢基体上沉积制备c-BN薄膜,采用红外光谱(Infrared spectra,IR)、X射线光电子能谱(X-ray photoelectron spectrum,XPS)和原子力显微镜(Atomicforce microscopy, AFM)等分析方法对沉积的薄膜进行了表征分析.实验结果表明:硅基体上离子注硼有利于c-BN薄膜内应力的降低;合适的注硼量注入高速钢基体有利于c-BN的生成和薄膜内应力的降低.AFM分析表明,注硼处理的高速钢基体上沉积的薄膜表面形貌平整,结晶性较好.此外也采用XPS方法对硅和高速钢基体硼过渡层进行了成分与组织结构分析,探索研究了硼缓冲层对c-BN薄膜生长的影响.