Single Nanoparticle Magnetic Spin Memristor

There is an increasing demand for the development of a simple Si‐based universal memory device at the nanoscale that operates at high frequencies. Spin‐electronics (spintronics) can, in principle, increase the efficiency of devices and allow them to operate at high frequencies. A primary challenge for reducing the dimensions of spintronic devices is the requirement for high spin currents. To overcome this problem, a new approach is presented that uses helical chiral molecules exhibiting spin‐selective electron transport, which is called the chiral‐induced spin selectivity (CISS) effect. Using the CISS effect, the active memory device is miniaturized for the first time from the micrometer scale to 30 nm in size, and this device presents memristor‐like nonlinear logic operation at low voltages under ambient conditions and room temperature. A single nanoparticle, along with Au contacts and chiral molecules, is sufficient to function as a memory device. A single ferromagnetic nanoplatelet is used as a fixed hard magnet combined with Au contacts in which the gold contacts act as soft magnets due to the adsorbed chiral molecules.     

Manipulating spin current in the magnetic nanopillar

Because of the capability to switch the magnetization of a nanoscale magnet, the spin transfer effect is critical for the application of magnetic random access memory. For this purpose, it is important to enhance the spin current carried by the charge current. Calculations based on the diffusive spin-dependent transport equations reveal that the magnitude of spin current can be tuned by modifying the ferromagnetic layer and the spin relaxation process in the device. Increasing the ferromagnetic layer thickness is found to enhance both the spin current and the spin accumulation. On the other hand, a strong spin relaxation in the capping layer also increases the spin current but suppresses the spin accumulation. To demonstrate the theoretical results, nanopillar structures with the size of approximately 100 nm are fabricated and the current-induced magnetization switching behaviors are experimentally studied. When the ferromagnetic layer thickness is increased from 3 nm to 20 nm, the critical switching current for the current-induced magnetization switching is significantly reduced, indicating the enhancement of the spin current. When the Au capping layer with a short spin-diffusion length replaces the Cu capping layer with a long spin-diffusion length, the reduction of the critical switching current is also observed.     

Single Domain 10 nm Ferromagnetism Imprinted on Superparamagnetic Nanoparticles Using Chiral Molecules

The rapid growth in demand for data and the emerging applications of Big Data require the increase of memory capacity. Magnetic memory devices are among the leading technologies for meeting this demand; however, they rely on the use of ferromagnets that creates size reduction limitations and poses complex materials requirements. Usually magnetic memory sizes are limited to 30–50 nm. Reducing the size even further, to the ≈10–20 nm scale, destabilizes the magnetization and its magnetic orientation becomes susceptible to thermal fluctuations and stray magnetic fields. In the present work, it is shown that 10 nm single domain ferromagnetism can be achieved. Using asymmetric adsorption of chiral molecules, superparamagnetic iron oxide nanoparticles become ferromagnetic with an average coercive field of ≈80 Oe. The asymmetric adsorption of molecules stabilizes the magnetization direction at room temperature and the orientation is found to depend on the handedness of the chiral molecules. These studies point to a novel method for the miniaturization of ferromagnets (down to ≈10 nm) using established synthetic protocols.     

Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve

Great interest in current-induced magnetic excitation and switching in a magnetic nanopillar has been caused by the theoretical predictions of these phenomena. The concept of using a spin-polarized current to switch the magnetization orientation of a magnetic layer provides a possible way to realize future 'current-driven' devices: in such devices, direct switching of the magnetic memory bits would be produced by a local current application, instead of by a magnetic field generated by attached wires. Until now, all the reported work on current-induced magnetization switching has been concentrated on a simple ferromagnet/Cu/ferromagnet trilayer. Here we report the observation of current-induced magnetization switching in exchange-biased spin valves (ESPVs) at room temperature. The ESPVs clearly show current-induced magnetization switching behaviour under a sweeping direct current with a very high density. We show that insertion of a ruthenium layer between an ESPV nanopillar and the top electrode effectively decreases the critical current density from about 10(8) to 10(7) A cm(-2). In a well-designed 'antisymmetric' ESPV structure, this critical current density can be further reduced to 2 x 10(6) A cm(-2). We believe that the substantial reduction of critical current could make it possible for current-induced magnetization switching to be directly applied in spintronic devices, such as magnetic random-access memory.     

Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer

Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L1₀ phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L1₀ FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin–orbit coupling. The symmetry breaking that generates spin torque within L1₀ FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L1₀ FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.     

Field‐Free Programmable Spin Logics via Chirality‐Reversible Spin–Orbit Torque Switching

Spin–orbit torque (SOT)‐induced magnetization switching exhibits chirality (clockwise or counterclockwise), which offers the prospect of programmable spin‐logic devices integrating nonvolatile spintronic memory cells with logic functions. Chirality is usually fixed by an applied or effective magnetic field in reported studies. Herein, utilizing an in‐plane magnetic layer that is also switchable by SOT, the chirality of a perpendicular magnetic layer that is exchange‐coupled with the in‐plane layer can be reversed in a purely electrical way. In a single Hall bar device designed from this multilayer structure, three logic gates including AND, NAND, and NOT are reconfigured, which opens a gateway toward practical programmable spin‐logic devices.     

Size-dependent nonlinear weak-field magnetic behavior of maghemite nanoparticles

The magnetic behavior at room temperature of maghemite nanoparticles of variable sizes (from 7 to 20 nm) is compared using a conventional super quantum interference device (SQUID) and a recently patented technology, called MIAplex. The SQUID usually measures the magnetic response versus an applied magnetic field in a quasi-static mode until high field values (from -4000 to 4000 kA m(-1)) to determine the field-dependence and saturation magnetization of the sample. The MIAplex is a handheld portable device that measures a signal corresponding to the second derivative of the magnetization around zero field (between -15 and 15 kA m(-1)). In this paper, the magnetic response of the size series is correlated, both in diluted and powder form, between the SQUID and MIAplex. The SQUID curves are measured at room temperature in two magnetic field ranges from -4000 to 4000 kA m(-1) (-5T to 5T) and from -15 to 15 kA m(-1). Nonlinear behavior at weak fields is highlighted and the magnetic curves for diluted solutions evolve from quasi-paramagnetic to superparamagnetic behavior when the size of the nanoparticles increases. For the 7-nm sample, the fit of the magnetization with the Langevin model weighted with log-normal distribution corresponds closely to the magnetic size. This confirms the accuracy of the model of non-interacting superparamagnetic particles with a magnetically frustrated surface layer of about 0.5 nm thickness. For the other samples (10-nm to 21-nm), the experimental weak-field magnetization curves are modeled by more than one population of magnetically responding species. This behavior is consistent with a chemically uniform but magnetically distinct structure composed of a core and a magnetically active nanoparticle canted shell. Accordingly the weak-field signature corresponds to the total assembly of the nanoparticles. The impact of size polydispersity is also discussed.     

Possible Spin Pumping Effects on Spin Torque Induced Magnetization Switching in Magnetic Tunneling Junctions

Dependence of spin torque induced magnetization switching upon interfacial insulating layers properties of magnetic tunneling junctions (MTJ) are studied. For the same magnetic properties and patterning geometric dimensions, changes in MTJ interfacial insulating layers properties reveal interesting magnetization switching behaviors. These behaviors cannot be explained by conventional Landau-Lifshitz-Gilbert equation with a spin torque term and an intrinsic ferromagnetic relaxation damping. However the magnetization switching dynamics can be understood through assumption of spin pumping effects in magnetic tunneling junctions. This is not only important for fundamental understanding of spin and electronic transport in MTJ but also important for practical trade-offs between critical switching current and MTJ resistance for spin torque random access memory.     

Magnetocrystalline anisotropy energy and spin polarization of Fe3Si in bulk and on Si(001) and Si(111) substrates

In order to achieve highly efficient spin polarized transport, first of all magnetocrystalline anisotropy energy, which determines the magnetic easy axis, must be understood. The highly precise full-potential linearized augmented plane-wave method is employed to investigate the magnetism and magnetocrystalline anisotropy energy of a ferromagnetic Heusler alloy Fe₃Si on Si(001) and Si(111) substrates. The calculated magnetocrystalline anisotropy energy of bulk D0₃ Fe₃Si was found to depend sensitively on a tetragonal distortion: The magnetization is along the z-axis at c/a < 1 and on the xy plane at c/a > 1. The out-of-plane magnetic easy axis of both Fe₃Si/Si(001) and (111) was calculated to be quite stable with enhanced magnetocrystalline anisotropy energy compared with bulk value. The magnetic easy axis of Fe₃Si/Si(001) and (111) is discussed in detail with single particle energy spectra. The degree of spin polarization is also presented at the interfaces between Fe₃Si and Si. The calculated spin polarizations of Fe₃Si/Si(111) tend to retain the spin polarization of the bulk, whereas they are reduced for the (001) interfaces.     

Field dependence of switching currents in an exchange biased spin valve

Current induced magnetic reversal due to spin transfer torque is a promising candidate in advanced information storage technology. It has been intensively studied. This work reports the field-dependence of switching-currents for current induced magnetization switching in a uncoupled nano-sized cobalt-based spin valve of exchange biased type. The dependency is investigated in hysteretic regime at room temperature, in comparison with that of a trilayer simple spin valve. In the simple spin valve, the switching currents behave to the positive and the negative applied magnetic field symmetrically. In the exchange biased type, in contrast, the switching currents respond to the negative field in a quite unusual and different manner than to the positive field. A negative magnetic field then can shift the switching-currents into either negative or positive current range, dependently on whether a parallel or an antiparallel state of the spin valve was produced by that field. This different character of switching currents in the negative field range can be explained by the effect of the exchange bias pinning field on the spin-polarizer (the fixed Co layer) of the exchange biased spin valve. That unidirectional pinning filed could suppress the thermal magnetization fluctuation in the spin-polarizer, leading to a higher spin polarization of the current, and hence a lower switching current density than in the simple spin valve.     

Small-Angle Neutron Scattering by the Magnetic Microstructure of Nanocrystalline Ferromagnets Near Saturation

The paper presents a theoretical analysis of elastic magnetic small-angle neutron scattering (SANS) due to the nonuniform magnetic microstructure in nanocrystalline ferromagnets. The reaction of the magnetization to the magnetocrystalline and magnetoelastic anisotropy fields is derived using the theory of micromagnetics. In the limit where the scattering volume is a single magnetic domain, and the magnetization is nearly aligned with the direction of the magnetic field, closed form solutions are given for the differential scattering cross-section as a function of the scattering vector and of the magnetic field. These expressions involve an anisotropy field scattering function, that depends only on the Fourier components of the anisotropy field microstructure, not on the applied field, and a micromagnetic response function for SANS, that can be computed from tabulated values of the materials parameters saturation magnetization and exchange stiffness constant or spin wave stiffness constant. Based on these results, it is suggested that the anisotropy field scattering function S_H can be extracted from experimental SANS data. A sum rule for S_H suggests measurement of the volumetric mean square anisotropy field. When magnetocrystalline anisotropy is dominant, then a mean grain size or the grain size distribution may be determined by analysis of S_H.     

CNG储气井井筒腐蚀的漏磁检测探索

为了对CNG储气井安全隐患进行有效检测,根据漏磁检测原理,应用ANSYS对CNG储气井井筒漏磁磁场分布进行模拟.仿真结果表明,在合适的磁化参数下可以有效地检测出腐蚀状况.在此基础上,采用交变磁化方式,以锰锌铁氧体作为磁化材料,用霍尔元件阵列检测漏磁信号,加以计算机组成漏磁检测系统.实验结果表明.该系统能够检测出井筒的缺陷,但是精度还需进一步提高.     

磁轭式磁粉探伤机提升力测量装置的研制

磁粉探伤是一种重要的无损检测方法,在生产实际中得到了广泛应用。磁粉探伤机的性能指标稳定并满足工作要求,是保证其检测结果准确可靠的前提,磁粉探伤机最关键的性能指标就是其磁轭的磁化能力,目前国内常用的磁化能力校验方法是提升力测试法。本文根据磁轭式磁粉探伤机提升力的定义,利用智能传感器和高速数据采集技术,研制出了一种磁粉探伤机提升力测量装置,本装置操作简便,结果直观,不用再使用笨重的提升力测量试块,大大提高了校验效率,取得了良好的社会效益和经济效益。     

热处理温度对M-Ba铁氧体微米纤维结构和磁性能的影响

以柠檬酸和金属盐为原料,采用有机凝胶先驱体转化法成功制备了直径为500～600nm的钡铁氧体(BaFe12O19)微米纤维。通过XRD、SEM和VSM等技术对所制备的目标纤维进行了表征。结果表明,经750℃焙烧2h后,可获得M-Ba铁氧体纯相。随着焙烧温度的升高,晶粒逐渐长大,经850℃焙烧2h后,纤维主要由比较规则的片状晶粒组成。钡铁氧体纤维的磁性能主要受晶粒尺寸和测试温度的影响。经950℃焙烧2h后,组成纤维的晶粒尺寸约为62nm,室温下测得的饱和磁化强度和矫顽力均取得最大值,分别约为67A.m2/kg和328kA/m。在液氮(77K)条件下,纤维的饱和磁化强度有显著提高,最大值约为87A.m2/kg,这主要是由于纳米晶的表面自旋有序程度提高造成的。     

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

This paper, based on a presentation at the Spintronics 2001 conference, provides a review of our studies on II–VI and III–V Mn-doped Diluted Magnetic Semiconductors. We use simple models appropriate for the low carrier density (insulating) regime, although we believe that some of the unusual features of the magnetization curves should qualitatively be present at larger dopings (metallic regime) as well. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also found to enhance the ferromagnetic transition temperature. Unusual spin and charge transport is implied.     

Spin-Polarized Bipolar Transport and Its Applications

In spin-polarized bipolar transport both electrons and holes in doped semiconductors contribute to spin–charge coupling. The current conversion between the minority (as referred to carriers and not spin) and majority carriers leads to novel spintronic schemes if nonequilibrium spin is present. Most striking phenomena occur inhomogeneously doped magnetic p–n junctions, where the presence of nonequilibrium spin at the depletion layer leads to the spin-voltaic effect: Electric current flows without external bias, powered only by spin. The spin-voltaic effect manifests itself in giant magnetoresistance of magnetic p–n junctions, where the relative change of the magnitude of electric current upon reversing magnetic field can be more than 1000%. The paper reviews nonmagnetic and magnetic spin-polarized p–n junctions, formulates the essentials of spin-polarized bipolar transport as carrier recombination and spin relaxation limited drift and diffusion, and discusses specific device schemes of spin-polarized solar cells and magnetic diodes.     

Proximity-effect correction in electron-beam lithography on metal multi-layers

We report a proximity-effect correction in electron beam patterning when fabricating a spin valve device with a junction size of 100 nm × 100 nm. Since the spin valve device has a stack of magnetic/non-magnetic/magnetic metal multi-layers on oxidized Si substrate, its proximity effect should be appropriately corrected to realize a nano-scale junction. ZEP 520A was chosen as an electron beam resist because its dry-etching resistance is high enough to serve as an etching mask in the post-process. A set of proximity parameters, α, β, and η of ZEP 520A coated metal multi-layers was evaluated by using the doughnut pattern method. A simulation was carried out based on given proximity parameters in order to obtain effective dose factors of each segment of the exposure pattern. The junction with a desired shape and size on a metal multi-layer was successfully fabricated with a help of efficient proximity-effect correction.     

Current-Induced Spin–Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin–orbit torque (SOT), which originates from the spin–orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT-based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field-free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out-of-plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.     

DyFe10Si2Nx化合物的结构与磁性

利用中子粉末衍射技术确定了77K温度下化合物中Si原子占位和原子磁矩，研究了DyFe10Si2化合物低温下的结构与磁性．结果表明，在77K化合物的易磁化方向与ab平面之间有较小的夹角．采用全势能线性缀加平面波（（L）APW）＋局域轨道（10）方法计算了DyFe10Si2及其氮化物的磁性和间隙原子效应，分析了化合物中间隙N原子在Si原子不同占位时的作用．结果表明，N原子的杂化作用能提高化合物的饱和磁矩（不显著），使其居里温度有显著的提高（15％-20％）.     

Current-induced torques in magnetic materials

The magnetization of a magnetic material can be reversed by using electric currents that transport spin angular momentum. In the reciprocal process a changing magnetization orientation produces currents that transport spin angular momentum. Understanding how these processes occur reveals the intricate connection between magnetization and spin transport, and can transform technologies that generate, store or process information via the magnetization direction. Here we explain how currents can generate torques that affect the magnetic orientation and the reciprocal effect in a wide variety of magnetic materials and structures. We also discuss recent state-of-the-art demonstrations of current-induced torque devices that show great promise for enhancing the functionality of semiconductor devices.