Effects of morphologies of (Cd+Te) powders on the properties of sintered CdS/CdTe solar cells

Polycrystalline CdS/CdTe solar cells have been prepared by coating and sintering a CdS slurry and a (Cd+Te) slurry. CdS layers were first formed on borosilicate glass substrates at 600°C in nitrogen and then CdTe layers were formed on the sintered CdS layers at 625°C in nitrogen. The (Cd+Te) slurry contained (Cd+Te) powders mixed in a ball mill for 12–220 h instead of more expensive CdTe powders. The shape of cadmium particles changed from spherical to plate-like and the diameter of the plate-shaped particles became smaller as the ball-milling time increased. In addition, a compound CdTe started to form during a long milling time. The sintered CdTe layers were more compact as the diameter of plate-shaped cadmium particles decreased. However, cracks developed in the sintered CdTe layer when the diameter was small ( 2 m). The efficiency of sintered CdS/CdTe solar cells increased with decreasing particle diameter and then decreased with further decrease in particle diameter. The highest efficiency of 12.1% was achieved using a mixture of (Cd+Te) powders which had plate-shaped cadmium particles with a diameter of 5 m. The results suggest that high-efficiency sintered CdS/CdTe solar cells can be fabricated by using CdTe slurry from the mixture of (Cd+Te) powders with an inexpensive ball-milling process.     

Effects of CdCl2 in CdTe on the properties of sintered CdS/CdTe solar cells

Sintered CdS films on glass substrates with low electrical resistivity and high optical transmittance have been prepared by a coating and sintering method. All-polycrystalline CdS/CdTe solar cells with different microstructures and properties of the CdTe layer were fabricated by coating a number of CdTe slurries, which consisted of cadmium and tellurium powders, an appropriate amount of propylene glycol and various amounts of CdCl₂, on the sintered CdS films and by sintering the glass-CdS-(Cd + Te) composites at various temperatures. The presence of more than 5 wt% of CdCl₂ in the (Cd + Te) layer enhances the sintering of the CdTe film and the junction formation by a liquid-phase sintering mechanism. A low sintering temperature results in poor densification of the CdTe layer and the CdS-CdTe interface, whereas a high sintering temperature results in a deeply buried homojunction. The optimum temperature for the sintering of the CdTe layer and for junction formation decreases with increasing amount of CdCl₂. All-polycrystalline CdS/CdTe solar cells with an efficiency of 10.2% under solar irradiation have been fabricated by a coating and sintering method using cadmium and tellurium powders for the CdTe layer.     

Sintering and crystallization of mullite powder prepared by sol-gel processing

Mullite powder with the stoichiometric composition (3Al₂O₃.2SiO₂) was synthesized by a sol-gel process, followed by hypercritical drying with CO₂. Within the limits of detection by X-ray diffraction, the powder was amorphous. Crystallization of the powder commenced at 1200 °C and was completed after 1 h at 1350 °C. In situ X-ray analysis showed no intermediate crystalline phases prior to the onset of mullite crystallization and the pattern of the fully crystallized powder was almost identical to that of stoichiometric mullite. The synthesized powder was compacted and sintered to nearly theoretical density below 1250 °C. The microstructure of the sintered sample consisted of nearly equiaxial grains with an average size of 0.2 m. The effect of heating rate (1–15 °C min^–1) on the sintering of the compacted powder was investigated. The sintering rate increased with increasing heating rate, and the maximum in the sintering curve shifted to higher temperatures. The sintering kinetics below 1150 °C can be described by available models for viscous sintering.     

Effects of aluminium on the electrical and mechanical properties of PTCR BaTiO3 ceramics as a function of the sintering temperature

The effect of AI additions on the electrical behaviour of positive temperature coefficient of resistance (PTCR) BaTiO₃ ceramic sintered in air at temperatures ranging between 1220 and 1400° C have been investigated. Two batches of material, both showing a PTCR effect, were prepared identically except that additions of AI₂O₃ (0.55 mol %) were made to one of them. It has been confirmed that the presence of aluminium results in an increase in the temperature at which the maximum resistivity, _max, occurs as well as reducing the sintering temperature, in the presence of silicon, to 1240° C. Additionally, direct comparisons between the two materials have demonstrated that such additions result in an increase of 100% in the minimum resistivity, _min, at sintering temperatures beyond 1280° C. A similar increase in _max for sintering temperatures below 1360° C and a five-fold reduction in the ratio of _max/_min in samples sintered above 1320° C have also been attributed to the presence of aluminium. It was further found that aluminium increases the average grain size by 30% and promotes the formation of a liquid phase.     

Effects of copper doping on the electronic properties of CdS films sintered with CdCl2

Chlorine- and copper-doped polycrystalline CdS films were prepared by coating a slurry which consisted of CdS, CdCl₂, CuCl₂ and propylene glycol on a glass substrate and sintering in a nitrogen atmosphere, to investigate the effects of copper doping on the window properties of all-polycrystalline CdS/CdTe heterojunction solar cells. The variations of carrier concentration as a function of the amount of copper doping in CdS films which were doped with the order of 10¹⁸ cm^–3 chlorine have been explained in terms of electronic compensation of the copper impurity. The variations of optical transmission spectra as a function of copper doping have been correlated with the variations of photoconductivity spectra. Even 10 p.p.m. copper in the sintered CdS films degrades the window properties of the CdS films significantly. The degradation is caused by reduced optical transmission rather than by an increase in electrical resistivity.     

Effects of microstructure on the R-curve behaviour of sintered silicon nitride

The R-curve behaviour of sintered silicon nitride was investigated by using short bar specimens. The samples were fabricated by sintering at 1700° C for 2 or 8 h in a nitrogen atmosphere, varying the initial contents of the silicon nitride powder. The R-curve was evaluated with a loading and unloading technique to calculateK _R during stable fracture. Steep R-curves were observed in the specimens made from the high initial content powder. Thus, the grainbridging effect behind the crack seems to contribute to the R-curve, because a steep R-curve corresponds to fibrous texture development. ApparentK _c values with an assumption of linear elastic fracture mechanics for the specimens undergoing 8h sintering, are greater than those undergoing 2 h sintering. These results can be attributed to microcracking.     

Conductive polymer PEDOT:PSS back contact for CdTe solar cell

Two types of superstrate glass/ITO/CdS/CdTe PV structures were prepared by high vacuum evaporation technique with (i) activation of CdS layer and CdS/CdTe bi-layer structure step-by-step and (ii) activation of CdS/CdTe bi-layer structure. The activation was performed by annealing the structures with CdCl₂ in air at 400 °C for 15 min. Main conditions for CdS and CdTe thin films deposition and following treatment were selected from the literature data with the purpose to prepare and compare complete CdTe solar cells with standard p + Cu_xTe back contact and conductive polymer poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonic acid (PEDOT:PSS) back contact. Obtained layers and structures were characterized using the XRD, SEM and I-V methods. Both the methods of activation treatment give comparable results from the point of view PV properties of complete solar cells. It was found that highly conductive PEDOT:PSS intermediate layer can significantly improve the back contact characteristics of CdTe. However these hybrid structures need to be further optimized to compete successfully with conventional inorganic back contacts in complete CdTe solar cells.     

Sintering condition and PTCR characteristics of porous (Ba,Sr)(Ti,Sb)O3

We fabricated porous (Ba,Sr)(Ti,Sb)O₃ ceramics by adding potato-starch (1–20 wt %) and investigated the effects of sintering temperature (1300–1450 °C) and time (0.5–10 h) on the positive temperature coefficient of resistivity characteristics of the porous ceramics. The room-temperature electrical resistivity of the (Ba,Sr)(Ti,Sb)O₃ ceramics decreased with increasing sintering temperature, while that of the ceramics increased with increasing sintering time. For example, the room-temperature electrical resistivity of the (Ba,Sr)(Ti,Sb)O₃ ceramics for the samples sintered at 1300 °C and 1450 °C for 1 h is 6.8×10³ and 5.7×10² cm, respectively, while that of the ceramics is 6.5×10² and 1.3×10⁷ cm, respectively, for the samples sintered at 1350 °C for 0.5 h and 10 h. In order to investigate the reason for the decrease and increase of room-temperature electrical resistivity of the samples with increasing sintering temperature and time, the average grain size, porosity, donor concentration of grains (N _d), and electrical barrier height of grain boundaries () of the samples are discussed.     

CdTe thin film solar cells: Interrelation of nucleation, structure, and performance

The performance of CdTe solar cells as prototype of thin film solar cells strongly depends on film morphology. The needs for high solar cell performance using thin film materials will be addressed covering nucleation and growth control of thin film materials. In order to understand the basic growth mechanisms and their impact on cell performance, we have systematically investigated the growth of CdTe thin films by Close Spaced Sublimation (CSS) using the integrated ultra-high vacuum system DAISY-SOL. CdTe thin films were deposited on TCO/CdS substrates (transparent conductive oxide) held at 270 °C to 560 °C. The properties of the films were determined before and after CdCl₂ treatment using X-ray diffraction and electron microscopy. In addition, solar cells were prepared to find correlations between material properties and cell efficiency. At low sample temperature the films tend to form compact layers with preferred (111) orientation which is lost at elevated temperatures above 450 °C. For CdS layers without (0001) texture there is in addition a low temperature regime (350 °C) with (111) texture loss. After activation treatment the (111) texture is lost for all deposited layers leading to strong recrystallisation of the grains. But the texture still depends on the previous growth history. The loss of (111) texture is evidently needed for higher performance. A clear correlation between cell efficiency and the texture of the CdTe film is observed.     

The influence of mechanochemical treatment of the Bi2O3–ZrO2 system on the structural and dielectric properties of the sintered ceramics

A powder mixture of -Bi₂O₃ and ZrO₂, both monoclinic, in the molar ratio 2 : 3, was mechanochemically treated in a planetary ball mill in an air atmosphere for up to 20 h, using steel vial and hardened-steel balls as the milling medium. Mechanochemical reaction leads to the gradual formation of an amorphous phase. After 5 h of milling the starting -Bi₂O₃ and ZrO₂ were transformed fully into a non-crystalline phase. After milling for various times the powders were compacted by pressing and isothermal sintering. The pressed and sintered densities depended on the milling time. Depending on the duration of the mechanochemical treatment and sintering temperature, the phases: -Bi₁₂(Zr _x Fe_1–x )O₂₀; Bi(Zr _x Fe_1–x )O₃ and Bi₂(Zr _x Fe_1–x )₄O₉ were obtained by reactive sintering, whereby the Fe originates from vial and ball debris. The dielectric permittivity of the sintered samples significantly depends on the milling time. Samples milled for 10 and 15 h and subsequently sintered at 800 °C for 24 h exhibit a hysteresis dependence of the dielectric shift (in altering electric fields higher than 10 kV/cm at room temperature), confirming that the synthesized materials possess ferroelectric properties.     

Pressureless sintering of SiC-TiC composites with improved fracture toughness

Composites of SiC-TiC containing up to 45 wt% of dispersed TiC particles were pressureless sintered to 97% of theoretical density at temperatures between 1850°C and 1950°C with Al₂O₃ and Y₂O₃ additions. An in situ-toughened microstructure, consisted of uniformly distributed elongated -SiC grains, matrixlike TiC grains, and yttrium aluminum garnet (YAG) as a grain boundary phase, was developed via pressureless sintering route in the composites sintered at 1900°C. The fracture toughness of SiC-30 wt% TiC composites sintered at 1900°C for 2 h was as high as 7.8 MPa·m^1/2, owing to the bridging and crack deflection by the elongated -SiC grains.     

Influence of powder characteristics on gas pressure sintering of Si3N4

The sintering behaviours of four kinds of Si₃N₄ powders were investigated by dilatometry in 10 atm N₂ at 1890, 1930 and 2050° C. The sinterabilities of powders were compared and discussed in relation to the powder characteristics. A large size distribution in the powder accelerated grain and pore growth at <1800° C, which resulted in the inhibition of further densification at >1800° C. The presence of carbon in a powder prevented densification. A powder with a uniform grain size kept the microstructure of the sintered material uniform during sintering at <1800° C and gave a high degree of shrinkage at >1800° C. Densification at >1800° C was accompanied by the dissolution of equi-axial -Si₃N₄ grains and reprecipitation as elongated -Si₃N₄ grains from the oxynitride liquid. The relation between the densification and microstructure is discussed in terms of the relative rates of densification and grain growth.     

Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p-i-n structure

Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeS_x layer into a CdS/CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS₂ after post growth sulphur (S) annealing of the FeS_x layer between 400 °C and 500 °C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeS_x layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeS_x layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeS_x interface due to S inter-diffusion during the annealing process.     

Effects of CdCl2 on the electrical properties of sintered CdS films

CdS films on glass substrates with various amounts of CdCl₂ have been prepared by coating and sintering, and their microstructure, electrical resistivity, carrier concentration and mobility have been investigated. The sintering rate is strongly increased near the melting temperature of CdCl₂ and the enhancement in the sintering is via a liquid-phase sintering mechanism. Doping of chlorine also occurs during the sintering and the solubility of chlorine in CdS is of the order of 10¹⁸ cm^–3 at 650° C. The electron concentration of the sintered CdS films which contained CdCl₂ before sintering increases with increasing grain size. The electron mobility increases sharply with increasing average grain size due to a sharp decrease in the total trap density, which is proportional to the total grain-boundary area.     

Processing and microstructure of porous and dense PZT thick films on Al2O3

The processing of porous PZT thick-film ceramics on Al₂O₃ has been studied. The films were screen-printed from a thixotropic ink of PZT with a 58% solids content. The thick films were sintered between 1000 and 1150°C for 2 h. The sintered films show a 10 m thickness and an average pore diameter ranging from 1–2 m. The PZT forms a continuous skeleton that can be filled with the desired polymer. Dense and continuous PZT films were fabricated by screen-printing PZT ink on previously electroded Al₂O₃ substrates with Ag/Pd 70/30 paste. Densification of the PZT was obtained by sintering near the liquidus temperature of the Ag-Pd system.     

Sb2S3:C/CdS p-n junction by laser irradiation

In this paper, we report laser irradiated carbon doping of Sb₂S₃ thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb₂S₃ thin films of approximately 0.5 μm in thickness. Sb₂S₃ thin films were prepared from a solution containing SbCl₃ and Na₂S₂O₃ at 27 °C for 5 h and the films obtained were highly resistive. These C/Sb₂S₃ thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb₂ S₃:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb₂S₃:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl₂, sodium citrate, NH₄OH and thiourea at 70 °C. On the CdS film, Sb₂S₃/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb₂S₃ side facing the beam. The p-n junction formed by p-Sb₂S₃:C and n-type CdS showed V_oc = 500 mV and J_sc = 0.5 mA/cm² under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.     

Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

We have studied the influence of growth temperature (T_G) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se₂ (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T_G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T_G. For a T_G ≤ 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p-n interface of the device was found to become deteriorated severely at T_G > 200 °C. CIGS solar cells with ITO deposited at T_G = 200 °C showed the best performance in terms of efficiency.     

Preparation of alumina films by the sol-gel method

This review describes our study on preparation of alumina films by a sol-gel process and their several applications that have been investigated since 1986. Alumina films were prepared from alkoxide or inorganic salt. Both as-prepared alumina films were transparent in ultraviolet, visible and near infrared regions. The alumina from inorganic salt (inorganic alumina) was structureless even after annealed at 300–700°C in air, while the alumina from alkoxide (alkoxide alumina) was in pseudo-boehmite at an annealing temperature lower than 400°C and was in - or -type at 400–700°C. Both alumina films became opaque after annealed at temperatures above 1000°C. The inorganic alumina film annealed at 800°C showed a gas permeability that was influenced by physico-chemical properties of penetrant and alumina. Composite films of alumina and poly(vinyl alcohol) (PVA) were hydrophilic but insoluble in water, and removal of PVA from the composite films by annealing at 600°C led to formation of transparent alumina films. Such properties enabled us to use a counter diffusion method for fabricating -Fe₂O₃-doped alumina films. Alumina films doped with organic dyes such as laser dyes, hole-burning dyes and non-linear optical dyes, which were fabricated by gelation of dye-added alumina sol, exhibited laser emission, hole-spectra and second- or third-harmonic generation properties, respectively. Hydrogenation of alkene was catalyzed by Ni nanoparticles doped alumina films that were prepared by gelation of Ni²⁺ solution-added alumina sol and annealing the Ni²⁺-doped alumina gel in hydrogen gas. Nonlinear optical properties were observed for alumina films doped with CdS, Au and Ag nanoparticles, which were fabricated by gelation of Cd²⁺, HAuCl₄ and AgNO₃ solution-added alumina sols and annealing the Cd²⁺-doped alumina gel in H₂S gas and the Ag⁺- and Au³⁺-doped alumina gels in H₂ gas. Rare earth metal ion-doped alumina films, which were prepared by gelation of rare earth metal ion solution-added alumina sol and annealed the ion-doped alumina gel, exhibited not only normal luminescence but also up-conversion emission, energy transfer type luminescence and long lasting luminescence.     

The effect of sintering on the mechanical properties of SOFC ceramic interconnect materials

Solid oxide fuel cell (SOFC) interconnect materials, strontium and calcium doped lanthanum chromite, were synthesized to investigate the effect of dopant content and sintering temperature on their sinterability. The results show that approximately 96% of the theoretical density could be achieved when LaCrO₃, doped with 30 mol% Ca, was sintered in air at 1400°C. However, to get the same sintered density for the strontia doped material, a 1700°C sintering temperature had to be used. The effect of sintering temperature on the fracture strength was also investigated. A maximum fracture strength of 234 MPa for La_0.7Sr_0.3CrO_3– and 256 MPa for La_0.7Ca_0.3CrO_3–were obtained for both samples sintered at 1700°C.     

Nanosized hydroxyapatite powders derived from coprecipitation process

Nanosized hydoxyapatite (Ca₁₀(PO₄)₆(OH)₂ or HA) powders were prepared by a coprecipitation process using calcium nitrate and phosphoric acid as starting materials. The synthesized powders were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Brunauer-Emmett-Teller (BET) specific area measurment techniques. Single phase HA, with an average grain size of about 60 nm and a BET surface area of 62 m²/g, was obtained. No grain coarsening was observed when the HA powders were heated at 600°C for 4 hours. HA ceramics were obtained by sintering the powders at temperatures from 1000°C to 1200°C. Dense HA ceramics with a theoretical density of 98% and grain size of 6.5 m were achieved after sintering the HA powders at 1200°C for 2 hours. HA phase was observed to decompose into tricalcium phosphate when sintered at 1300°C. The microstructure development of the sintered HA ceramics with sintering temperature was also characterized and discussed.