一种半导体封装用键合金丝的研制

在开发了1种微合金配方的基础上,重点研究了真空熔炼连铸工艺,研制出1种适用于半导体分立器件和集成电路封装的高强度低弧键合金丝。结果表明:1)微合金元素得到有效添加,且分布均匀。2)铸锭组织为粗大柱状晶沿轴向分布。3)机械性能均匀稳定,Φ19μm:断裂负荷≥5cN,延伸率2%~6%;Φ15μm:断裂负荷≥3 cN,延伸率2%~6%。4)与国内外相同规格键合金丝相比,具有更高的强度和更大的熔断电流。     

微电子封装用键合金丝替代产品的研究现状

随着电子封装技术的发展,传统键合金丝在性能和价格上已经不具备优势。采用复合和改性等方法可以开发出满足要求的键合金丝替代品。总结了金包银复合键合丝、钯包铜复合键合丝、金合金键合丝和银合金键合丝共4种键合金丝替代产品的性能特点、成分配比、生产技术难点和关键点,介绍了部分典型产品,并对替代产品的发展趋势进行了展望。     

键合金丝的合金化研究动向

根据最新的专利文献综述了高弧度，低弧度，高强度键合金丝的发展现状，介绍了微量添加元素的作用和Au-Cu-Ca,Au-Ag,Au-Ni,Au-Sn(In),Au-Pt(Pd)等合金化键合金丝的研究动向，以及键合金丝的微量添加元素复合化，组成合金化，加工细线化，低成本化的发展趋势。     

电子封装Cu键合丝的研究及应用

论述了传统Au、Al-1%Si键合丝在电子封装中的局限性,分析了Cu键合丝优良的材料性能,Cu键合丝替代Au丝和Al-1%Si丝可缩小焊接间距,提高芯片频率和可靠性。并在此基础上阐述了单晶铜作为键合丝的优势,通过键合性能的对比显示了单晶铜键合丝在电子封装中的良好特性。     

What is the future of bonding wire? Will copper entirely replace gold?

Thermosonic ball bonding is a major interconnect process in microelectronics packaging and is positioned to remain one of the key process technologies available to package designers in the near future. However, the main wire material used in fine pitch (FP) and ultra-fine pitch (UFP) ball bonding is gold and with significant increases in gold price, gold ball bonding has become a more costly process that has a considerable economic effect on the assembly of packages used in consumer electronics. An alternative wire material to gold is copper, which is much cheaper and has several technical benefits including better electrical conductivity and has been widely used in discrete and power devices with wire diameters typically larger than 30μm in diameter for many years. However, copper wire behaves quite differently than gold due to its different physical properties, some of which are beneficial and others detrimental to bonding performance. In this article, we briefly review some of the advantages and difficulties with using copper wire advanced packaging and explain why copper cannot replace gold in many applications and why gold offers significant benefits.     

Al焊盘表面氧化膜对金丝键合的影响

在半导体制造工艺中，Al焊盘表面的氧化膜会阻碍金丝键合。针对某公司新半导体工艺中出现键合失效问题的芯片，采用SEM，EDS和AES对切片前后的芯片进行了分析，结果发现，切片前后Al焊盘表面的元素成分基本一致。可以认为清洗工艺对金丝键合基本没有影响，它不是导致金丝键合失效的原因；通过AES对焊盘进行深度剖析，在深度接近Al焊盘高度的一半时，氧的含量仍然高达40%左右，如此高含量的氧已经足以将Al完全氧化，其所形成的氧化膜阻碍了金丝键合所必需的金属连接和扩散过程，从而导致键合质量差，甚至无法实现键合。     

射频器件超细引线键合射频性能仿真

随着雷达性能指标不断提高、体积不断压缩,作为其关键组成部分成之一的T/R(transmitter and receiver)组件也不断向小型化和高密度方向发展. 采用超高密度引线键合技术能够实现高密度射频器件封装,但也会带来键合焊点可靠性下降、电路射频性能差等问题. 针对键合线尺寸减小而引起射频性能下降的问题,采用HFSS软件探究了在0 ~ 20 GHz金带尺寸变化对电路射频性能的影响规律,并利用ANSYS Q3D和ADS软件对超细引线键合的电路进行阻抗匹配. 结果表明,对于金丝和金带而言,插入微带双枝短截线匹配结构均能明显提高电路的射频性能. 对于类型1结构,S21与S12的传输功率能达到?0.049 dB. 对于类型2结构,S21与S12的传输功率能达到?7.245 × 10?5 dB,说明类型2结构下的信号传输几乎无损耗. 该结果为超细引线键合技术在射频电路中的应用提供了理论指导.     

半导体微电子技术用贵金属材料的应用与发展

贵金属具有良好的化学稳定性,高电导率和热导率,特有的电学、磁学、光学等性能,是发展半导体微电子技术必不可少的材料.文章综述了半导体器件欧姆接触、线路和电极、金属化系统、半导体包封,以及化合物半导体、液体金属离子源等用贵金属材料的应用和发展.     

国外超细金丝的生产技术

介绍超细金丝的生产及其对生产环境和原料的要求,金丝的品种类型和化学成分,金丝的力学性能及其与键合特性的关联.着重介绍两种主要的生产方法和技术特点,讨论金丝代用材料的研制情况.     

金丝的力学特征对球键合的微观组织和性能的影响

用电子背散射衍射仪对具有不同力学特征金丝的微区组织进行表征,采用扫描电镜和光学显微镜观察线弧轮廓、热影响区和焊点形貌,并通过推拉力测试仪测量线弧拉力和焊球剪切力,分析金丝力学特征对球键合质量的影响。结果表明：半硬态1和半硬态2的金丝芯部保持纤维状组织,边缘晶粒为细小的等轴晶,沿径向微区组织形貌有明显差异。打火烧球后形成的热影响区长度短,球颈部的组织有明显的梯度性,键合后弧高较小。软态金丝的组织为粗大的等轴晶,沿径向分布均匀,键合拉力低,易发生滑球现象。半硬态2金丝与焊盘的结合力强,引线键合拉力高,综合键合质量优,是最适合球键合工艺的金丝。     

半导体用高纯金制备技术及应用研究进展

综述了目前制备高纯金的各种方法的原理及工艺,并对其优缺点进行了分析。化学还原分离法效率高、周期短,但酸耗大、污染严重;熔融氯化法对原料适应范围广,但存在氯化过程复杂、工艺难于精准控制和产品质量不稳定等不足;溶剂萃取法效率高、产品质量稳定,但试剂消耗大、有机污染严重和易燃易爆;电解法具有成本低、除杂效果好、产品纯度稳定性强及环境污染小的优点,但原料适应性相对较差、生产周期相对较长且会积压金。高纯金具体应用形式为键合用金丝、溅射靶材及高纯度金基合金,涉及电子、半导体及航空航天等领域。     

Doped and low-alloyed gold bonding wires

Fine gold wires with diameters down to 15μm are used for bonding semiconductor devices. Increasing miniaturization of electronic circuits calls for smaller wire diameters. This requires the development of gold wires with increased mechanical strength and good bondability to replace thicker wire diameters without detriment to their functionality. The first gold bonding wires were pure gold, and then doped gold wires of high purity were developed because of their stabilized and improved mechanical characteristics. Nowadays and in the near future low alloyed gold wires are increasingly replacing doped gold wires. This paper gives an overview of the mechanical characteristics of doped and low-alloyed gold bonding wires and their bondability.     

Properties of welded joints made of Weldox 1100 steel

This study evaluated both the joint strength of copper wire on a copper substrate with tin plating and the joint reliability of copper wire bonding after heat treatment. The suitable tin thickness and bonding conditions, which are stage temperature, wire bonding power and bonding time, were chosen by the peel test after copper wire bonding. Tin thickness of 10 m showed a high bonding rate under the conditions of stage temperature 373 K, bonding power 500–700 mW and bonding time 30 50 ms. Before heat treatment, the peel strength of the copper wire on the copper substrate with tin plating conditions was weaker than that of gold wire on a gold substrate. After heat treatment for more than 70 h at 298 K, the peel strength of the copper wire became higher than that of the gold wire and twice as high as the initial bonding strength. The tin layer remained between the copper wire and copper substrate before heat treatment. When the samples were held at 298 K, tin reacted with copper and turned into a Cu–Sn intermetallic compound. Upon completion of this reaction at 298 K for over 70 h, the soft tin layer between the copper wire and copper substrate disappeared. Therefore, the peel strength of copper wire after heat treatment increased. These results were observed by scanning electron microscope images of the interface between the copper wire and copper substrate before and after heat treatment.     

Relationship between microstructure homogeneity and bonding stability of ultrafine gold wire

Inhomogeneous microtexture evolution during the cold drawing process usually results in lean, sway, or sweep failure. The <111> longitudinal fiber texture has higher stiffness than the <100> texture and its proportion and distribution in the cross-section are critical for the bonding stability of fine gold wire. We investigated the inhomogeneous microtexture evolution of gold wire that was cold drawn through an asymmetric diamond die. In this study, the distributions of the <111> and <100> textures in a 20 μm diameter fine gold wire are the variables and their effects on the bonding stability of the wire were estimated by electron backscattered diffraction (EBSD) and finite element method (FEM) simulations. The use of a focused ion beam apparatus enabled a high quality of band contrast of the EBSD to be achieved in the exact half cross-sectional area of the fine gold wire. The detailed three-dimensional FEM results show that the asymmetric distribution of the textures plays a crucial role in increasing the spatial displacement of the gold bonding wire.     

引线键合中材料参数对硅基板应力状态的影响

利用＂热—力—超声＂增量耦合有限元模型,对采用不同引线（金,铜）以及采用铜引线在不同银镀层厚度（48,1,6μm）条件下的键合过程进行了模拟.结果表明,在其它条件不变的情况下,金引线键合过程对硅基板内应力状态的影响远小于铜引线,且应力集中的位置更接近键合中心;随着镀层厚度的增加,基板所受到的压应力逐渐减小,但基板所受到的最大压应力在硅的抗压力范围之内;同时基板所受到的剪应力也逐渐减小,由于剪应力是硅基板损坏的决定性因素,因此采用厚度为16μm的镀层对减小基板损坏更有利.     

金包银复合键合丝的组织演变及变形行为

采用金相显微镜、双束离子显微镜、高低温拉力仪及纳米压痕仪对不同真应变条件的金包银复合键合丝的组织和力学性能进行表征,研究了金包银复合键合丝的组织结构演变、力学性能及变形行为特点。结果表明：金包银复合键合丝的银合金芯材沿着拉伸方向从胞状树枝晶演变为纤维组织,靠近界面的过渡层始终保持细小的等轴晶或球状晶粒,金包覆层在变形过程中均匀连续。各组分在变形过程中尺寸变化不一致,拟合后的尺寸变化常数与试样直径的变化不成正比。显微硬度、抗拉强度、延伸率均随着变形量的增加而增大。在单轴拉伸过程中,金包银复合键合丝组分之间相互制约,使单向拉应变变为复杂的二维应力状态,交替变化的应力状态可抑制裂纹的形核,提高材料的塑性和韧性。     

Some thoughts on bondability and strength of gold wire bonding

The bonding mechanisms of gold, to give the desired strength of wire bonding, still require detailed investigation, including establishing adequate and reliable testing procedures. The current practices for analysing the mechanisms of wire bonding are inadequate and do not provide a comprehensive picture. This is because the focus of the tests is not clear, which causes variation in the results obtained, changing the conclusions about the responsible mechanism. Furthermore, as the size of Au wire bonds decreases, the mechanism responsible for thermosonic Au wire bonding may change. This paper provides a comprehensive analysis of the current and possible future methods for elaborating the bonding mechanism and strength of thermosonic Au wire bonds. We discuss the testing methods, their limitations and advantages, and suggest ways in which they can be improved.     

微电子封装银合金键合线的研究及发展前景

论述了微电子封装中常用的键合金线、键合铜线和键合银线的局限性,从机械性能、键合性能、可靠性等方面分析了键合银合金线的特征及作为键合引线的优势,并在此基础上阐述了键合银合金线重点研究方向以及在未来集成电路封装中的发展前景。     

Cratering on thermosonic copper wire ball bonding

Copper wire bonding offers several mechanical and electrical advantages as well as cost saving compared to its gold wire predecessor. Despite these benefits, silicon cratering, which completes the fracture and removal of bond pad underlayers, has been a major hurdle to overcome in copper wire bonding. Copper wire is harder than gold, and thus needs greater ultrasonic power and bond force to bond it onto metal pads such as aluminum. This paper reports a study on the influence of wire materials, bond pad hardness, and bonding-machine parameters (i.e., ultrasonic power and bond force) on silicon cratering phenomenon. Ultrasonic power and z-axis bond force were identified as the most critical bonding machine parameters in silicon cratering defects. A combination of greater bond force and lower ultrasonic power avoids silicon cratering and gives the desired effects. Results also show that a harder bond pad provides relatively good protection from silicon cratering.     

贵金属键合丝材料的研究进展

贵金属键合丝是半导体封装的关键材料之一,详细综述了键合金丝、键合金银丝、键合银丝和镀钯键合铜丝的合金成分设计,制备工艺和发展现状,并展望了其未来发展前景。