新型二元混合基钡钨阴极的发射性能研究

研究了二元混合基底的制备及对钡钨阴极发射性能影响，结果表明所研究的W-Ir（MMM）、W-Re（CMM）二元混合基钡钨阴极有比传统覆膜纯W基钡钨阴极更低的逸出功，具备更好的发射性能;从所研究的两种混合基钡钨阴极发射来看，覆膜阴极和未覆膜阴极发射效果没有明显差异。     

新型压制钡钨阴极性能的研究

研究了新型压制钡钨阴极的发射性能 ,并且分别用KYKY - 2 80 0扫描电子显微镜 (SEM)和美国BIR公司ACTIS工业CT微焦点系统来分析所研制的新型压制钡钨阴极的表面形貌和内部结构 ,并对比了传统的钡钨阴极 ,来说明简化覆膜浸渍钡钨阴极生产工艺的可行性。     

真空电子技术

0462 2003020094新型压制钡钨阴极性能的研究/张红卫,白振纲,俞世吉,丁耀根(中国科学院电子学研究所)11真空电子技术.一2002,(3)一67一69研究了新型压制钡钨阴极的发射性能,并且分别用KYKY一2800扫描电子显微镜(5 EM)和美国BIR公司ACTIS工业CT微焦点系统来分析所研制的新型压制钡钨阴极的表面形貌和内部结构,并对比了传统的钡钨阴极,来说明简化覆膜浸渍钡钨阴极生产工艺的可行性.图5参1(冈,J)到了一组具有原子分辨率的F EM像.该像可能是从单壁碳纳米管束中突出的一根(16,0)锯齿型单壁碳纳米管开口端的发射形成的.理论计算了FEM图…     

一种大发射热阴极

很久以来,许多研究阴极的工作者都试图把稀土金属氧化物掺和在氧化钡中,制成稀土金属钡盐,作为钡钨阴极的发射物质,以改进一般铝酸盐钡钨阴极的性能。这些努力已取得一定的成效,特别是含氧化钪的钡钨阴极取得了更为引人注目的进展。但迄今为止,只见到有关这种阴极的发射性能的报道而尚未见到有关它的其他性能以及应用情况的报道。 几年来,我们也开展了含稀土元素的钡钨阴极特别是钪酸盐钡钨阴极的研究。最近,     

新型三元混合基钡钨阴极的发射性能研究

研究了三元混合基底的制备及对钡钨阴极发射性能影响,结果表明所研究的W-Ir-Rh、W-Ir-Ru、W-Ir-Re三元混合基钡钨阴极的发射与传统的覆膜纯W基钡钨阴极的发射水平近于相当,但其制备工艺更简单,排气和激活时出气更少,能够加速管子的处理工艺.     

钡钨阴极的性能与多孔钨结构的关系

本文对渍制钡钨阴极多孔钨结构与发射和蒸发性能的有关数据进行了分析研究。结果表明,对于多孔钨结构,钨粉的颗粒度和孔隙的孔径大小决定了小孔内表面的总面积和钡在钨表面上的扩散路程,钡输送通道的大小和长短。这些因素对钡钨阴极的性能和工作机理有密切关系,但仅用多孔钨孔隙度来表征阴极性能那是不够严格的。最后我们提出了对于不同用途的阴极应采用的多孔钨结构。     

一种环状钡钨阴极发射体制造新方法

通过分析传统环状钡钨阴极发射体制造工艺的优缺点,结合实际生产工艺需要,总结出一种新的钡钨阴极海绵钨环制造工艺,避免了传统浸铜工艺造成的铜残留,提高了阴极性能,延长了磁控管的寿命。     

一种新型氧化物阴极制备方法介绍

着重介绍类似于压制钡钨阴极的一种新型氧化物阴极的制作方法。该方法能使阴极工作温度在只有760℃条件下，却能支取直流发射3A/cm^2高电流密度的氧化物阴极。     

钪钨基体钡钨热阴极发射性能研究

为获得电子发射性能优异的含钪钡热钨阴极,采用液固掺杂、掺杂钨粉还原、等静压制、高温烧结、浸渍发射物质等工艺,制备出钪钨基体钡钨热阴极。对该阴极的发射性能测试结果显示,在阴极温度分别为950℃、1050℃、1100℃时,脉冲发射电流密度分别为53.6A/cm2、65.7A/cm2、79A/cm2。分析认为,由于氧化钪均匀地覆盖在钨颗粒的表面,氧化钪与钨接触面增多,使氧化钪与钨的结合力增大,因此该阴极具有均匀性良好的热电子发射,较好的抗离子轰击能力。     

钪钨基体钡钨热阴极发射性能研究

为获得电子发射性能优异的含钪钡热钨阴极．采用液固掺杂、掺杂钨粉还原、等静压制、高温烧结、浸渍发射物质等工艺．制备出钪钨基体钡钨热阴极。对该阴极的发射性能测试结果显示,在阴极温度分别为950℃、1050℃、1100℃时,脉冲发射电流密度分别为53．6A／cm^2、65．7A／cm^2、79A／cm^2。分析认为．由于氧化钪均匀地覆盖在钨颗粒的表面,氧化钪与钨接触面增多,使氧化钪与钨的结合力增大,因此该阴极具有均匀性良好的热电子发射,较好的抗离子轰击能力．     

六硼化镧材料的化学腐蚀工艺研究

目前,阴极发射体材料多存在逸出功大，可靠性及均匀性低，发射性能低、不能自动调节活性物质更替的速度等方面的问题．与之相比,六硼化镧既具有可恒定地维持一个活性阴极表面．同时具有高导电率和良好的热稳定性及化学稳定性，是作为阴极发射体的理想材料．而对六硼化镧的化学腐蚀在以其为阴极的阴极发射体制备工艺中起着至关重要的作用，本文简述了对材料的化学腐蚀工艺的初步研究，并得到了图形化的六硼化镧表面。     

Two-dimensional simulation of silicon avalanche cathodes

The characteristics of silicon avalanche cathode as a novel electron emitting device with ultra-shallow p-n junctions have been studied using the two-dimensional device simulator PISCES-IIB. The steady-state simulation indicates that the nonplanar surface topology resulting from fabrication process causes current crowding near the edge of the emitting area where the surface step exists. Current crowding degrades the emission uniformity and also reduces the emission current under increased reverse bias. The nonplanar surface structure also causes punchthrough in the epitaxial layer as the reverse bias on the cathode increases. As a result, the percentage of the cathode current contributing to emission decreases, reducing the emission efficiency consequently. The simulation shows that the portion of the cathode current that flows through the emitting area drops to as much as 30% at cathode bias higher than 12 V, compared to the same current just after breakdown. This also affects the rate of increase in the total emission current which is the product of the emission efficiency and the overall cathode current     

微细加工技术在有机电致发光器件中的应用

有机电致发光器件是近年来出现的一种新型显示技术。为了实现高分辨率及改善器件的发光性能，多种传统的及新兴的微细加工技术已被应用到该技术中，而且针对该技术还发展了阴极隔离柱等新技术。总结了应用于有机电致发光器件的几种典型微细加工技术，并介绍了它们各自的特点及其在发光器件中的具体应用。     

Noise parameters of defects of the emitting surface of thermionic cathodes

A noise model in which fluctuation noise of output current is determined by weakly emitting fragments of thermionic cathode working in the saturation regime (defects on the emitting surface) is proposed. The measured noise characteristics of the shot and flicker components of noise can be used to determine distribution of defects with respect to emission current densities and the noise parameters of defects. The relation of noise parameters and the degree of degradation of cathode is analyzed using the pulsed emission current at relatively long working times of dispenser cathodes with the W–Re sponge and Os coating. Preliminary results show that that proposed noise parameters can be used for the development of working methods for estimation of cathode quality.     

Carrier radiation distribution in organic light-emitting diodes

This paper is based on the analysis of white organic electroluminescent device electroluminescent spectrum to explain the regular pattern of carrier radiation distribution.It has proved electron that is injected from cathode is satisfied with the regularity of radiation distribution on the organic emitting layer.This radiation distribution is related to several factors,such as electron injection capabilities,applied electrical field intensity,carrier mobility,etc.The older instruction design is ITO/2-TNATA/NPB/ADN:DCJTB:TBPe/Alq3/cathode.Get to change electron injector capabilities through using different cathode and also find electroluminescent spectrum to produce significant changes.Simultaneously,electron radiation quantity has some limitation,and electroluminescent spectrum reflects that spectral intensity does not change anymore when the ratio of cathode dopant to a saturated state on the organic emitting layer.It also shows the same spectrum variational phenomenon while changing the applied electrical field intensity.To put forward of the carrier radiation distribution is good for organic light emitting diode (OLED) luminescence properties analysis and research.     

添加剂在扩散式阴极基底中的作用

文章着重介绍掺入扩散式有基底中添加剂Ｃｒ２Ｏ３,ＩｎＯ,Ｉｎ２Ｏ３,ＺｒＯ２,ＴｉＯ２,ＴｉＯ２＋Ｈ２ＩｒＯ６,不仅降低了阴极的逸出功,增大了发射电流密度降低了工作温度,延长了寿命,减少了发射物质蒸发,还增强了耐离子轰击特性。     

Ethoxylated polyethylenimine as an efficient electron injection layer for conventional and inverted polymer light emitting diodes

We report inverted light emitting devices using ethoxylated polyethylenimine (PEIE) as a single electron injection layer for indium tin oxide cathode, which possess comparable efficiency to those using ZnO/PEIE double electron injection layers. Implementation of a PEIE layer between light emitting polymer layer and aluminum has been shown to significantly enhance device efficiency as well. Improvement of device efficiency can be attributed to increased electron injection due to the reduced work function of PEIE modified cathode as well as the hole blocking effect of PEIE layer. Furthermore, PEIE serves as an efficient electron injector for a range of light emitting polymers with wide distribution of energy levels.     

一种新型脉冲微束斑X射线源的研究

通过控制栅极电压技术,有效地控制LaB6阴极电子枪发射系统电子束发射的通与断,成功实现了新型台式微束斑X射线源的脉冲辐射。该X射线源主要由三部分组成：LaB6单晶阴极电子枪发射系统,静电聚焦系统以及金属靶材系统。通过对该微束斑X射线源输出的X射线束斑、亮度等特性的初步实验测试,表明这种脉冲式微束斑X射线源具有束斑小、亮度高的特点,其中X射线束焦斑仅为10μm左右。     

氧化物阴极新进展

文章着重介绍稀土金属氧化物或稀土金属加入普通氧化物阴极电子发射涂层中，明显地提高了阴极发射性能并延长了寿命周期。同时给出微电子探针分析仪对涂层中激活剂分析对比图以及发射测量的对比图。