敏化剂修饰纳米晶TiO2多孔膜电极的光电化学行为

在TiO2纳米晶多孔膜电极上,修饰了合成的RuL2(SCN)2(L＝2,2′-bipyridine-4,4′-dicarboxylic acid)及聚苯胺,用光电化学方法研究了该纳米晶TiO2/敏化剂多孔膜电极的光电转换机理,并比较了两类敏化复合电极的光电转换效能.用染料或聚苯胺修饰纳米晶多孔膜电极后,可使该复合电极在可见光区吸收增加,光电流增强,且起始波长红移至＞600 nm,从而提高了宽禁带半导体电极的光电转换效率.     

纳米Cu2O/TiO2 异质结薄膜电极的制备和表征

通过阴极还原在纳米TiO2膜上电沉积Cu2O，获得了p-Cu2O／n-TiO2异质结电极．研究了沉积温度对Cu2O膜厚、纯度和形貌的影响，制备出纯度较高、粒径为40-50nm的Cu2O薄膜．纳米Cu2O膜在200℃烧结后透光性最好，禁带宽度为2．06eV．光电化学测试表明纳米p-Cu2O／n-TiO2异质结电极呈现较强的n-型光电流响应并且能够提高光电转换效率．     

聚3-甲基噻吩修饰量子点硫化镉连接纳米结构TiO2复合膜电极光电化学研究

采用原位化学法在纳米结构TiO2电极上制备了量子点CdS(Q-CdS),并用电化学方法在TiO2/QCdS表面聚合3-甲基噻吩po1y(3-Methylthiophene)(PMeT).通过对PMeT修饰Q-CdS连接TiO2纳米结构膜的研究表明,PMeT和Q-CdS单独修饰纳米结构TiO2电极和PMeT修饰Q-CdS连接纳米结构TiO2电极的光电流产生的起始波长都向长波方向移动;一定条件下在可见光区光电转换效率均较纳米结构TiO2的光电转换效率有明显的提高;聚3-甲基噻吩(PMeT)与Q-CdS连接的纳米结构TiO2之间存在p-n异质结.在一定条件下p-n异质结的存在有利于光生电子/空穴的分离,提高了光电转换效率.     

P3HT及CTCHT修饰纳米TiO2的光电性能研究

用光电流作用谱、光电流-电势图等光电化学方法研究了聚3-己基噻吩(P3HT)及3-己基噻吩和2-噻吩甲酸共聚物(CTCHT)修饰纳米结构TiO2电极的光电转换性质。结果表明,经修饰后的纳米TiO2电极光电流明显增强,光电转换效率得到明显提高。在复合膜电极中存在p-n异质结,异质结的存在有利于光生电子-空穴对的分离,降低了电荷的反向复合几率,提高了光电转换效率。     

ZnO纳米团簇与CdSe纳米棒复合膜的光电化学性能研究

用水热法合成了粒径均匀、分散良好的花状ZnO纳米团簇和CdSe纳米棒.讨论了ITO/ZnO/CdSe复合膜电极光电性能的影响因素,对比研究了ITO/ZnO纳米团簇及ITO/CdSe纳米棒膜电极的光电化学性能,实验表明:复合膜电极拓展了在长波方向的光吸收,提高了光电转换效率;当ZnO与CdSe复合摩尔比为1∶3时,ITO/ZnO/CdSe纳米复合膜电极在本实验中得到最高光电转换效率(IPCE)25.27%,远远高于单一ITO/ZnO花状纳米团簇膜电极和ITO/CdSe纳米棒膜电极.     

ZnO/TiO2纳米管晶膜电极的制备及光电性能

采用水热法制备了ZnO纳米棒,以ZnO纳米棒为原料制备出ZnO/TiO2纳米管晶膜电极并应用于染料敏化太阳能电池.用扫描电镜(SEM)、X射线衍射仪(XRD)、X射线能谱仪(EDX)和N2吸脱附分析等研究了样品的结构、表面形貌和化学组成,并通过紫外可见光度计和电化学工作站探讨了煅烧温度在80~600℃范围内ZnO/TiO2纳米管电极的光电化学性能.此外,研究经TiCl4化学处理的ZnO/TiO2纳米管电极光电性能的改善情况.结果表明,600℃煅烧的ZnO/TiO2纳米管电极制备的染料敏化太阳能电池表现出较优的光电性能,其短路电流密度(Jsc)为2.28 mA/cm2,开路电压(Voc)为0.631 V,光电转换效率η为0.66%.600℃煅烧的ZnO/TiO2纳米管经TiCl4处理后的染料敏化太阳能电池的光电性能得到显著改善,其光电转换效率η提高到1.06%.     

TiO_2纳米棒-ZnO纳米片分级结构的制备及光电性能

采用两步水热法在无种子层的基础上制备了新颖的TiO_2纳米棒-ZnO纳米片分级结构。采用旋涂辅助连续离子反应方法分别在TiO_2纳米棒阵列和TiO_2纳米棒-ZnO纳米片分级结构中沉积窄禁带半导体光敏剂CdS纳米晶,形成CdS/TiO_2纳米棒复合膜和CdS/TiO_2-ZnO分级纳米结构复合膜。利用SEM、TEM、XRD、紫外-可见吸收光谱、瞬态光电流图谱等分析手段对样品的形貌结构以及电极的光吸收和光电性能进行了表征和测试。结果表明,沉积光敏层CdS后,TiO2纳米棒-ZnO纳米片分级纳米结构膜的瞬态光电流明显高于TiO_2纳米棒阵列膜,尤其是在500nm处光电响应出现明显增强;以P3HT为p型聚合物材料组装杂化太阳电池,光伏性能测试结果表明,以P3HT/CdS/TiO_2-ZnO分级结构复合膜制备的杂化太阳电池能量转换效率可达0.65%,与P3HT/CdS/TiO2复合膜制备的杂化太阳电池的能量转换效率相比提高了58%。     

ITO/TiO2-xNx/NiO复合电极制备及其光电化学性能

以三乙胺为氮源,钛酸丁酯为钛源,采用溶胶-凝胶法制备氮掺杂TiO2,并用旋涂法制备ITO导电玻璃为基材的氮掺杂TiO2薄膜,经300℃、400℃、500℃处理制得ITO/TiO2-xNx薄膜。采用XRD、XPS、SEM和UV-Vis吸收光谱等对样品进行表征,并进行光电化学性能测定,结果表明500℃处理制得的ITO/TiO2-xNx薄膜具有最佳的光电催化性能。进一步采用化学沉积法在ITO/TiO2-xNx薄膜表面上沉积多孔NiO薄膜,制得ITO/TiO2-xNx/NiO复合薄膜,研究表明该复合薄膜具有很好的光电致色特性及储放电性能,可应用于光电致变色和光电能量储存领域。     

TiO2/CdSe纳晶复合薄膜电极的光电性能研究

研究了TiO2/CdSe纳晶复合薄膜电极的瞬态光电流、光电流作用谱、光吸收特性,结果表明TiO2/CdSe纳晶复合薄膜电极阻止了CdSe上光生电子和空穴的复合,从而提高了阳极光电流的响应,获得了较高增幅的稳态光电流.     

不同方法制备的TiO2薄膜电极光电性能比较

用Doctor-Blade和Dip-Coating方法制备了粒子膜和溶胶-粒子膜两类TiO2纳米晶薄膜电极,利用BAS—100B电化学工作站和IM-6e交流阻抗仪研究了两种电极的光电化学性能．由光电流和交流阻抗谱（EIS）的测试结果发现,由于引入溶胶,增加了TiO2纳米粒子与基底的附着力,改善了TiO2纳米粒子与基底以及TiO2纳米粒子之间的电性接触,使得溶胶-粒子膜电极的电荷转移电阻远远小于粒子膜电极,提高了溶胶-粒子膜电极的光电流．     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.