用于无线局域网的双频段低噪声放大器

采用0.18μmCMOS工艺设计并制造了一款新型的应用于无线局域网的双频段低噪声放大器。设计中,通过切换输入电感和负载电感,来使电路分别工作在2.4GHz和5.2GHz频段。在1.8V的电源电压下,在2.4GHz和5.2GHz两个频段上,其增益分别达到了11.5dB和10.2dB,噪声系数分别是3dB和5.1dB。芯片总面积是0.9mm×0.65mm。     

A 0.18μm CMOS 3-5 GHz broadband flat gain low noise amplifier

A 3-5 GHz broadband flat gain differential low noise amplifier (LNA) is designed for the impulse radio uitra-wideband (IR-UWB) system. The gain-flatten technique is adopted in this UWB LNA. Serial and shunt peaking techniques are used to achieve broadband input matching and large gain-bandwidth product (GBW). Feedback networks are introduced to further extend the bandwidth and diminish the gain fluctuations. The prototype is fabricated in the SMIC 0.18 μm RF CMOS process. Measurement results show a 3-dB gain bandwidth of 2.4-5.5 GHz with a maximum power gain of 13.2 dB. The excellent gain flatness is achieved with ±0.45 dB gain fluctuations across 3-5 GHz and the minimum noise figure (NF) is 3.2 dB over 2.5-5 GHz. This circuit also shows an excellent input matching characteristic with the measured S11 below-13 dB over 2.9-5.4 GHz. The input-referred 1-dB compression point (IPldB) is -11.7 dBm at 5 GHz. The differential circuit consumes 9.6 mA current from a supply of 1.8 V.     

Circularly polarised truncated-corner square patch microstriprectenna for wireless power transmission

A circularly polarised rectenna using a truncated-corner square-patch microstrip antenna has been developed for wireless power transmission at 5.8 GHz. The gain and axial ratio achieved were 8.5 dBi and 0.5 dB at 5.82 GHz respectively. A GaAs Schottky barrier diode was employed for microwave to DC conversion with a maximum conversion efficiency of 60%     

A monolithic double-balanced direct conversion mixer with an integrated wideband passive balun

This paper presents the design and performance characteristics of a 20-40 GHz monolithic double-balanced direct conversion mixer implemented using InGaP/GaAs HBT process. The compact MMIC mixer makes use of a Gilbert-cell multiplier and utilizes a broadband monolithic passive balun that has been developed for MMIC applications. The new balun makes use of multidielectric layer structure to achieve a broadband performance in a simple coplanar configuration. A measured return loss better than 15 dB, with a maximum insertion loss of 4.5 dB including the 3-dB power splitting loss has been achieved over the band from 15 to 45 GHz. Operated as a downconverter mixer, the newly developed direct conversion mixer achieves a measured conversion gain of 16 dB given an RF signal at 30 GHz, LO drive of 5 dBm and a downconverted baseband signal at 10 MHz. The mixer IP3 occurs at an output power of 4 dBm while the IP2 occurs at an output power of 11 dBm.     

1.5-6GHz增益和噪声系数稳定的两级超宽带CMOS低噪声放大器设计与性能模拟

 针对UWB应用设计实现了一个1.5-6GHz的两级CMOS低噪声放大器(LNA). 通过引入共栅(CG)和共源(CS)结构以获得宽范围内的输入匹配,采用电流镜和峰化电感进行电流复用,所提出的LNA实现了非常平坦化的功率增益和噪声系数(NF). 经标准0.18μm CMOS工艺实现后,版图后模拟结果表明在1.5-5GHz频率范围内功率增益(S21)为11.45±0.05dB,在2-6GHz频率范围内噪声系数(NF)为5.15±0.05dB,输入损耗(S11)小于-18dB. 在5GHz时,模拟得到的三阶交调点(IIP3)为-7dBm,1dB压缩点为-5dBm.在1.8V电源电压下,LNA消耗6mA的电流,版图实现面积仅为0.62mm^2.     

GaAs f.e.t. mixer operation with high intermediate frequencies

GaAs f.e.t. mixer operation is investigated at 6 GHz when the intermediate frequency is around 1 GHz. A 3 dB improvement in noise figure is measured, compared with 30 MHz i.f. operation. Other characteristics, such as conversion gain and dynamic range, are similar. Broadband operation is also investigated. With 0.5 ?m gate device, on s.s.b. noise figure of 5.6 dB is achieved with a conversion gain of 10 dB.     

60 GHz double-balanced up-conversion mixer on 130 nm CMOS technology

A millimetre-wave Gilbert-cell up-conversion mixer using standard 130 nm CMOS technology is presented. This mixer has a power conversion gain of better than 2 dB and has the highest reported OP 1 dB of -5.6 dBm when driven with a LO power of 0 dBm. The LO to RF isolation are better than 37 dB for LO from 57 to 65 GHz. Microstrip lines were employed for the matching network design at the mixer output. This is believed to be the first CMOS Gilbert-cell up-conversion mixer operating in the 60 GHz frequency band using fundamental LO.     

A large planar 39-GHz antenna array of waveguide-fed horns

A planar antenna in which box horns are used as radiating elements is described. The feed network is built by connecting rectangular waveguides with T-junctions. The matching of the T-junctions is improved by using rounded splitters and matching pins in the junctions. The radiating element has been designed to cancel out the grating lobe. The grating lobe is due to an element spacing larger than one wavelength. The highest sidelobes are at least 31 dB below the main beam in the H-plane and 16 dB in the E-plane. A gain of 37 dBi has been achieved at 39.2 GHz. These results demonstrate the feasibility of this antenna for applications requiring high gain at millimeter wavelengths     

Wide-Band Subharmonically Pumped W-Band Mixer in Single-Ridge Fin-Line

A subharmonic mixer is described that has an instantaneous bandwidth of 11 to 14 GHz centered near 95 GHz. A wide bandwidth is achieved by the close integration of a low-capacitance diode mount, printed circuit matching elements, and simple yet effective filters which are uniquely suited to realization in a single-ridge fin-line. The mixer also has a two-terminal shunt mount that will accept two conventional beam-lead diodes or a single dual-junction device. With the latter, a minimum conversion loss of 8.5 dB has been achieved with a drive level of only 4 dBm at 45 GHz.     

Monolithic millimeter wave optical receivers

A single stage monolithic millimeter wave optical receiver circuit was designed and fabricated using a metal-semiconductor-metal (MSM) photodetector and a pSeudomorphic Modulation Doped Field Effect Transistors (SMODFET) on a GaAs substrate for possible applications in chip-to-chip and free space communications. The MSM photodetector and the SMODFET epitaxial material were grown by molecular beam epitaxy (MBE). Device isolation was achieved using an epitaxially grown buffer between the MSM detector layers and SMODFET. The photodetector was designed for maximum absorption at optical wavelength of 770 nm light and the SMODFET impedance matching network was optimized for 44 GHz. The monolithic millimeter wave optical receiver circuit achieved 3 dB gain over a photodetector at 39 GHz, which was the limit of the measurement system. TOUCHSTONE model of the circuit indicated 6.6 dB gain over the photodetector and 5.7 dB total gain including the insertion loss of the photodetector at 44 GHz     

110-120-GHz monolithic low-noise amplifiers

The authors discuss the development of 110-120-GHz monolithic low-noise amplifiers (LNAs) using 0.1-mm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNAs have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The authors state that the small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band     

Dual-gate m.e.s.f.e.t. self-oscillating X-band mixers

GaAs dual-gate m.e.s.f.e.t.s have been successfully used as self-oscillating down-convertors in X-band. A single device replaces the preamplifier, mixer and local oscillator. The best conversion gain achieved by mixing from 10 GHz down to 1 GHz was 12 dB. The input (gate 1) to output (drain) port isolation amounted to 16 dB. Slug-tuner and `disc?-resonator circuits were tested and showed comparable gain and noise performance. Best d.s.b. noise figures of 5.5 dB could be realised at an i.f. of 1 GHz with an associated conversion gain of 4 dB.     

High-efficiency Q-to-W-band MIC frequency doubler

Integrated-circuit phase-lock oscillators are extremely difficult to develop above 60 GHz because of circuit losses. A viable alternative is to use a frequency doubler. A Q-to-W-band (40 to 80 GHz) frequency doubler has been developed using integrated-circuit suspended stripline. A conversion loss of less than 6.5 dB has been achieved with the output frequency at 80 GHz. This high efficiency was obtained by an innovative input and output matching circuit design. The advantages over a waveguide doubler include large reductions in size, weight and cost.     

12GHz GaAs单片混频器

分析研究了一种新型１２ＧＨｚＧａＡｓＭＥＳＦＥＴ单片混频器，这种混频器采用级联ＦＥＴ作为混频元件。射频（ＲＦ）和本振（ＬＯ）信号分别通过各自的匹配网络进入混频电路，在中频输出端用中频缓冲放大器代替通常的中频匹配电路。电路在厚０．２ｍｍ，面积１．５ｍｍ×１．２ｍｍ的ＧａＡｓ基片上实现。设计的ＭＭＩＣ混频器在本振１１ＧＨｚ，射频１１．７～１２．２ＧＨＺ频率范围内的最大变频增益１．８ｄＢ。这一结果使进一步研究单片微波接收机成为可能。     

180–425 GHz low noise SIS waveguide receivers employing tuned Nb/AIO x /Nb tunnel junctions

We report recent results on a 20% reduced height 270–425 GHz SIS waveguide receiver employing a 0.49 µm² Nb/AlO _x /Nb tunnel junction. A 50% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner reduced height waveguide mixer block. The junction uses an “end-loaded” tuning stub with two quarter-wave transformer sections. We demonstrate that the receiver can be tuned to give 0–2 dB of conversion gain and 50–80% quantum efficiency over parts of it's operating range. The measured instantaneous bandwidth of the receiver is ≈ 25 GHz which ensures virtually perfect double sideband mixer response. Best noise temperatures are typically obtained with a mixer conversion loss of 0.5 to 1.5 dB giving uncorrected receiver and mixer noise temperatures of 50K and 42K respectively at 300 and 400 GHz. The measured double sideband receiver noise temperature is less than 100K from 270 GHz to 425 GHz with a best value of 48K at 376 GHz, within a factor of five of the quantum limit. The 270–425 GHz receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii. Preliminary tests of a similar junction design in a full height 230 GHz mixer block indicate large conversion gain and receiver noise temperatures below 50K DSB from 200–300 GHz. Best operation is again achieved with the mixer tuned for 0.5–1.5 dB conversion loss which at 258 GHz resulted in receiver and mixer noise temperature of 34K and 27K respectively.     

W-band broadband integrated circuit mixers

Broadband integrated circuit mixers using a crossbar stripline configuration and a finline configuration have been developed. For the crossbar stripline balanced mixer, less than 7.5 dB conversion loss for 15 GHz instantaneous IF bandwidth has been achieved with the LO at 75 GHz and the RF swept from 76 to 91 GHz. For the finline balanced mixer, a conversion loss of 9 to 12 dB over a 19 GHz instantaneous IF bandwidth has been achieved as the RF is swept from 91 to 110GHz.     

An Ultra-Wide-Band 0.4–10-GHz LNA in 0.18-μm CMOS

A two-stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. With the common-gate configuration employed as the input stage, the broad-band input matching is obtained and the noise does not rise rapidly at higher frequency. By combining the common-gate and common-source stages, the broad-band characteristic and small area are achieved by using two inductors. This LNA has been fabricated in a 0.18-mum CMOS process. The measured power gain is 11.2-12.4 dB and noise figure is 4.4-6.5 dB with -3-dB bandwidth of 0.4-10 GHz. The measured IIP3 is -6 dBm at 6 GHz. It consumes 12 mW from a 1.8-V supply voltage and occupies only 0.42 mm²     

Design and Performance of W-Band Broad-Band Integrated Circuit Mixers

Broad-band integrated circuit mixers rising a crossbar suspended stripline configuration and a finline configuration were developed with GaAs beamlead diodes. For the crossbar suspended stripline balanced mixer, less than 7.5-dB conversion loss for 15-GHz instantaneous, IF bandwidth was achieved with the LO at 75 GHz and the RF swept from 76 to 91 GHz. With the LO at 90 GHz, a conversion loss of less than 7.8 dB was achieved over a 14-GHz instantaneous bandwidth as the RF is swept from 92 to 105 GHz. For the finline balanced mixer, a conversion loss of 8 to 12 dB over a 32-GHz instantaneous IF bandwidth was achieved as the RF is swept from 76 to 108 GHz. Integrated circuit building blocks, such as filters, broadside couplers, matching circuits, and varions transitions, were also developed.     

60 GHz amplifier employing slow-wave transmission lines in 65-nm CMOS

A three-stage V-band amplifier implemented in 65-nm baseline CMOS technology is presented in this paper. Slow-wave coplanar waveguides are used for matching and interconnects to study the benefits of using this line type in amplifier design. Measured power gain, noise figure and 1 dB output compression point at 60 GHz are 13 dB, 6.3 dB and +4 dBm, respectively. The amplifier has 19.6 GHz of 3 dB bandwidth, thus covering entirely the unlicensed band around 60 GHz. The performance is achieved with a 1.2 V supply and 45 mA DC current consumption.     

Performance of GaAs MESFET Mixers at X Band

A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 GHz. Noise figures as low as 7.4 dB and output third-order intermodulation intercepts of +18 dBm have heen obtained at 8 GHz with a balanced MESFET mixer.