Characterizations of InzGa1?z As1?x?yN xSbyP-i-N structures grown on GaAs by molecular beam epitaxy

The GaAs-based double-heterojunction P-i-N structures using In_zGa_1–zAs_1–x–yN_xSb_y as the i-layer is investigated for the first time using solid source molecular beam epitaxy. High quality coherent bulk InGaAsN_3.45%Sb (0.5 m) with a lattice-mismatch of 2.6 × 10^–3 can be achieved due to the surfactant properties of antimony, while the bulk InGaAsN_2% at 0.5 m with 1.06× 10^–3 mismatch is fully relaxed. Rapid thermal annealing (RTA) resulted in 25 meV low temperature (LT) photoluminescence (PL) full-width half-maximums (FWHM) for the bulk InGaAsNSb layers. InGaAsNSb experiences 30% less blueshifting with subjected under the same annealing conditions as InGaAsN with similar N content. Room temperature (RT) absorption measurements are in the range of 0.9–1.4 eV. The absorption edge of 1.41 m is achieved for sample D4.     

Production and dielectric properties of lead-free ceramics with the formula [(Na0.5K0.5)1 ? xLix](Nb1 ? y ? zTaySbz)O3

The influence of past history on the possibility of obtaining high-density ferroelectric ceramics of solid solutions [(Na_0.5K_0.5)_{1 − x} Li _x ](Nb_{1 − y − z} Ta _y Sb _z )O at x = 0–0.14, y = 0, 0.1, 0.2, and z = 0–0.1 is identified. The dynamics of behavior of materials under a field in the process of polarization is evaluated. The relative dielectric permeability of samples in a wide range of temperatures (20–700°C) and frequencies (25 Hz-1 MHz) of a variable electric field is studied. On the basis of study of dielectric, piezoelectric, and elastic properties of solid solutions, prospective objects for further technological elaboration and modification of chemical composition with the goal of improving the electrophysical parameters are selected. Original Russian Text ? I.A. Verbenko, O.N. Razumovskaya, L.A. Shilkina, L.A. Reznichenko, K.P. Andryushin, 2009, published in Neorganicheskie Materialy, 2009, Vol. 45, No. 6, pp. 762–768.     

Electrical properties and microstructure of CdxHg1 ? x ? yCrySe crystals

Crystals of the Cd _x Hg_{1 − x − y} Cr _y Se (x = 0.4, y = 0.1) quaternary solid solution have been grown by the Bridgman method, and their microstructure and electrical properties have been studied. The crystals are shown to contain various types of inclusions in the form of filaments and triangles.     

Effect of nonstoichiometry on the structure and microwave dielectric properties of Ba1 ? x(Zn1/2W1/2)O3 ? x and Ba(Zn1/2 ? yW1/2)O3 ? y/2

We have synthesized Ba_{1 − x} (Zn_1/2W_1/2)O_{3 − x} and Ba(Zn_{1/2 − y} W_1/2)O_{3 − y/2} barium tungstates with different deviations from cation stoichiometry (x = 0.01–0.05, y = 0.01–0.05), determined the phase composition of ceramics fabricated from the tungstates, and investigated their electrical properties. Even slight deviations from cation stoichiometry in Ba(Zn_1/2W_1/2)O₃ lead to the formation of the scheelite phase BaWO₄, and its content increases with heat-treatment temperature. Barium or zinc deficiency in the systems studied improves the sintering behavior of Ba(Zn_1/2W_1/2)O₃ and increases the degree of 1: 1 B-site cation ordering, which in turn ensures an increase in microwave quality factor, Q.     

LiNi1 ? x ? yCoxMnyO2 (x = y = 0.1, 0.2, 0.33) cathode materials prepared using mechanical activation: Structure, state of ions, and electrochemical performance

We have investigated LiNi_{1 − x − y} Co _x Mn _y O₂ (x = y = 0.1, 0.2, 0.33) cathode materials synthesized from mechanically activated mixtures of lithium hydroxide and nickel cobalt manganese hydroxide. The materials have a layered structure (sp. gr. ). Their unit-cell volume and the degree of disordering in their structure decrease with decreasing nickel content. According to x-ray photoelectron spectroscopy data, the major states of the transition-metal ions in the surface layer of the materials are Ni²⁺, Co³⁺, and Mn⁴⁺. With increasing nickel content, the Ni 2p _3/2 and Co 2p _3/2 binding energies increase, attesting to changes in M-O bond covalence. The highest specific electrochemical capacity, ∼170 mA h/g, is offered by LiNi_0.6Co_0.2Mn_0.2O₂. The position of redox peaks in the differential capacity curves of the three materials depends on composition: with increasing nickel content, the peaks shift to lower voltages. Original Russian Text ? N.V. Kosova, E.T. Devyatkina, V.V. Kaichev, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 2, pp. 227–235.     

Laser induced photoluminescence and morphological characterization of Cd(1?x)?yZnxMnyS nanocrystals

Doped II–VI chalcogenide semiconductor nanostructures have recently attracted a lot of attention due to the possibility of their application in various modern era devices. In the present study, Cd_(1−x)−y Zn _x Mn _y S {(0 ≤ x ≤ 0.5); (0.0001 ≤ y ≤ 0.1)} nanocrystals (NC) have been synthesized by facile wet chemical technique. Morphological and structural analyses of these synthesized quaternary NC have been done using X-ray diffraction (XRD) and transmission electron microscope (TEM) studies. Room temperature photoluminescence (PL) has been investigated using high peak power pulsed N₂-laser. Important optical parameter; excited state lifetime values have been calculated from the recorded multi-exponential decay curves. These fast and efficient nanophosphors have wide applications in opto-electronic industry as futuristic displays, lasers, nanoelectronics and nanosensors.     

Microstructure and Young’s modulus of high-pressure LixNa1 ? xTayNb1 ? yO3 ceramics

The microstructure and elastic properties of ceramic samples of high-pressure Li _x Na_{1 − x} Ta _y Nb_{1 − y} O₃ perovskite solid solutions have been studied for the first time in relation to their composition and the synthesis temperature. The results demonstrate that, with increasing sintering temperature, the Young’s modulus of the Li_0.17Na_0.83Ta _y Nb_{1 − y} O₃ solid solutions decreases, which can be understood in terms of the recrystallization behavior of the disordered solid solutions under high-pressure synthesis conditions.     

Electrical conductivity and thermal stability of (1 ? x )CsH2PO4/ x SiP y O z ( x = 0.2–0.7) composites

The physicochemical properties of (1 − x)CsH₂PO₄/xSiP _y O _z (x = 0.2–0.7) composites containing fine-particle silicon phosphates as heterogeneous additives have been studied at different humidities. The introduction of silicon phosphates suppresses the superionic phase transition of CsH₂PO₄ and increases the low-temperature conductivity of the materials, which depends significantly on humidity. The CsH₂PO₄-SiP _y O _z materials offer high conductivity (∼3 × 10⁻³ to 10⁻² S/cm at ∼110–230°C) at low water vapor pressures (3 mol % H₂O). Amorphization of the CsH₂PO₄ in the composites markedly changes its thermodynamic properties. The effect of long-term isothermal holding (210°C, 3 mol % H₂O) on the conductivity of the composites has been studied. Original Russian Text ? V.G. Ponomareva, E.S. Shutova, G.V. Lavrova, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 9, pp. 1131–1136.     

Cd-Doped Cu0.5Tl0.5Ba2Ca2Cu3?yCdyO10?δ (y=0,0.5,1.0,1.5,2.0) Superconductors

Superconducting properties of cadmium doped Cu_0.5Tl_0.5Ba₂Ca₂Cu_3−y Cd _y O_10−δ (y=0,0.5,1.0,1.5,2.0) samples have been studied using X-ray diffraction, resistivity, ac-susceptibility and FTIR absorption measurements. In X-ray diffraction studies these samples have shown to have tetragonal structure. The zero resistivity critical temperature and magnitude of diamagnetism are suppressed with the increased incorporation of Cd in the final compound. A change in the shape of FTIR absorption spectra, after doping, has shown the incorporation of Cd in the unit cell. A systematic hardening of the apical oxygen modes and softening of the CuO₂ planar modes of vibration with increased Cd doping have shown that it is incorporated in the unit cell of Cu_0.5Tl_0.5Ba₂Ca₂Cu_3−y Cd _y O_10−δ (y=0,0.5,1.0,1.5,2.0) superconductors. The FTIR absorption measurements of these samples have shown that hardening of the apical oxygen modes of types Cu(1)–O(2)–Tl and Cu(1)–O(2)–Cu(2)/Cd _y (y=0,0.5,1.0,1.5,2.0) increases with the increase of Cd doping in the samples. A softening of the CuO₂ planar oxygen mode Cu(2)–O–Cu(2) is also observed with the increased Cd doping in the final compound. It is most likely that hardening of the apical oxygen modes and the softening of the planar modes of vibration are associated damped harmonic oscillations produced by heavier Cd atoms in the CuO₂ planes, which suppress the phonon population from a desired level, reducing the magnitude of superconductivity in the final compound.     

Synthesis of New Pb-Based 1232 Cuprate Containing Boron in?the?(Pb0.5B0.5) Sr2(Er3?x?yCexSry)Cu2Oz System

New Pb-based layered cuprates containing boron with the 1232 structure have been synthesized in the (Pb_0.5B_0.5)Sr₂(Er_3−x−y Ce _x Sr _y )Cu₂O _z system. Nearly the single 1232 phase samples are obtained for the nominal composition of 1.6≤x≤1.9 and y=0.2. A sample with the composition of (Pb_0.5B_0.5)Sr₂(Er_1.2Ce_1.6Sr_0.2)Cu₂O _z shows resistivity-dropping phenomenon below 10 K and it shows a diamagnetic signal at about 9.0 K, though the superconducting volume fraction is very small. From these results, the sample may well be a new Pb-based superconductor with the 1232 structure.     

Neutron structural investigations of Y1?xCaxBa2Cu3?yCoyO7±δ

The results of a systematic powder neutron study on Y_1–x CaxBa₂Cu_3–y Co _y O_7± for A (x=y=0), B (x=0;y=0.2), C (x= 0;y=0.4), D (x=y=0.2), and E (x=y=0.4) are investigated with a view to understanding the relation between the structural parameters and superconductivity. Rietveld refinements of the structures show that: (a) Co substitutes at the chain Cu(1) sites only, except for sample E, where the presence of a minor amount of Co at the planar Cu(2) site cannot be ruled out; (b) Co substitution reduced thec-parameter, which is reduced even further upon substitution of Ca at the Y-sites; (c) the occupancy factors of the chain O(1) site indicate an average coordination of 4.8 and 5.1 for Co for samples B and C, but only 4 for D and E; (d) Cu/Co(1) atoms for B and C display large thermal parameters, suggesting a displacement from their ideal centrosymmetric location; (e) the apical Cu(1)-O(4) bond lengthens upon substitution of Co in samples B and C but undergoes shortening upon substitution of Ca in the case of samples D and E. The apical Cu(2)-O(4) bond, on the other hand, shows just the opposite trend; (f) samples D and E show a reduction in the separation of CuO₂ layers and their oxygen content; and (e) the bond valence of the Cu(2) ion shows the lowest value of 2.127 for the nonsuperconducting sample C.     

Band gap modified Al-doped Zn1?xMgxO and Zn1?yCdyO transparent conducting thin films

Al-doped Zn_1−x Mg _x O and Zn_1−y Cd _y O thin films were prepared on glass substrates by sol–gel method. The codoping thin films showed preferential c-axis orientation, and the lattice constant c evaluated from the shift of the position of (002) peak displayed an increasing evolution from x = 8 at.% to y = 8 at.%, indicating a roughly statistical substitution of Mg²⁺ and Cd²⁺ for Zn²⁺ in their solid solution. The effects of narrowing and widening band gap (E _g) on conductivity of (Cd, Al) and (Mg, Al) codoped ZnO thin films were simultaneously investigated using transmission spectra and electrical measurements. The transmittances of these films are obviously decreased by vacuum annealing to 50–60%. However, the carrier concentration and Hall mobility both increase, and resistivity decreases with narrowing band gap in 1 at.% Al-doped Zn_1−x Mg _x O and Zn_1−y Cd _y O thin films from x = 8 at.% to y = 8 at.%. It is revealed that the conductivity of Al-doped ZnO thin films could be enhanced by this simple band gap modification.     

Thermodynamic properties of (TeO2)0.95 ? n ? z(ZnO)z(Na2O)n(Bi2O3)0.05 glasses

The heat capacity (C _p ⁰) of the tellurite glasses

Effect of heat treatment in sulfur and mercury vapors on the magnetic susceptibility of Hg1 ? x Mn x Te1 ? y S y crystals

We have studied the effect of heat treatment in mercury and sulfur vapors on the magnetic susceptibility of Hg_{1 − x} Mn _x Te_{1 − y} S _y crystals. Measurements were performed by the Faraday method in the temperature range 77–300 K at H= 318 kA/m before and after heat treatments. The results demonstrate that the behavior of the magnetic susceptibility can be understood in terms of Mn-S-Mn-S, Mn-Te-Mn-Te, and (mixed) Mn-Te-Mn-S clusters of different sizes with indirect antiferromagnetic exchange interaction between the Mn atoms through the chalcogen atoms. Heat treatment in sulfur and mercury vapors leads to the formation of new clusters or changes (increases or decreases) the size of already existing clusters. Original Russian Text ? P.D. Maryanchuk, E.V. Maistruk, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 5, pp. 549–554.     

Superconducting Properties of Carbon and Zn Double-doped Mg1?xZnx(B1?xCx)2

A series of polycrystalline samples of Mg_1−x Zn _x (B_1−x C _x )₂ (x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) were synthesized by a conventional solid-state reaction method under a background pressure about 10⁻³ Pa. Phase identification, crystal structure and superconducting transition temperature (T _c) were studied by means of X-ray diffraction (XRD) and resistivity measurements. The results indicated that the lattice parameters a and c show no clear trend in their changes with increasing doping level, and it turned out that the dopants had a marked effect on the crystal-lattice parameters and changed the crystal structure of the samples. The T _c for Mg_1−x Zn _x (B_1−x C _x )₂ decreased with C and Zn doping, but the rate of decrease was slower than single C-doped. We propose that the suppression of T _c by doping originates largely from the structural change.     

Superconductivity and Electron–Phonon Interaction in?Cu0.5Tl0.5Ba2Ca2Cu3?yMyO10?δ (M=0, Si, Ge, Sn, and?y=0,?1)

Superconducting properties of Cu_0.5Tl_0.5Ba₂Ca₂Cu_3−y M _y O_10−δ (M=0, Si, Ge, Sn and y=0, 1) samples have been studied by using x-ray diffraction (XRD), resistivity, ac-susceptibility and Fourier Transform Infrared (FTIR) absorption measurements. We have tried to explore the role of the electron-phonon interaction in bringing about superconductivity in the Cu_0.5Tl_0.5Ba₂Ca₂Cu_3−y M _y O_10−δ material. A change in the cell parameters from XRD and the change in the shape of FTIR absorption spectra have shown the incorporation of doped elements (M=Si, Ge, Sn) in the unit cell of the final compound. It is most likely that the change in oxygen phonon modes is associated with the oscillations of heavier and lighter atoms in MO₂/CuO₂ planes. These oscillations of heavier and lighter atoms suppress the density of the phonon population from the desired level for optimum superconductivity in the final compound.     

Normal state and superconductivity of ErBa2(Cu1?xCrx)O7?δ(x=0–0.1)

The effects of Cr in ErBa₂(Cu_1–x Cr _x )O_7– (x=0–0.1) superconductor have been investigated. The critical temperature, which was determined by DC electrical resistance measurements, showed no suppression of the onset temperature (T _{c onset}) within the substitution range. The transition width (T _c ) broadened as the Cr content is increased. The normal state changes from the metal-like to semimetal/semiconductor-like for x0.03. Micrographs from the scanning electron microscope, X-ray diffraction pattern, and energy dispersive X-ray analysis results are used to describe the superconducting properties of these materials. The orthorhombic structure was preserved throughout the substitution range. Some possible roles of Cr in the system are discussed.     

Superconducting gap in PrxY1?xBa2Cu4O8 and YBa2?ySryCu4O8 probed by infrared phonon self-energies

We report a reflectivity study of thez-polarized TO-phonons of Pr _x Y_1–x Ba₂Cu₄O₈ and YBa_2–y Sr _y Cu₄O₈ alloys in the temperature range 10–300 K. Anomalies of the frequency and linewidth of the plane-oxygen vibration at300 cm^–1 due to the opening of the superconducting gap are found to occur upon crossing the superconducting transition temperatureT _c . Phonon self-energy effects are strongly dependent onT _c , providing evidence for a relative shift of the gap with respect to the energy of phonon.On leave from the Institute for Semiconductor Physics, Ukrainian Academy of Sciences, 252650 Kiev-28, Ukraine.     

Structural and dielectric properties of Na1?xBaxNb1?x(Sn0.5Ti0.5)xO3 ceramics

Lead-free (1 − x)NaNbO₃/xBa(Ti_0.5Sn_0.5)O₃ (x = 0.1, 0.125, 0.15, 0.175, 0.2, and 0.3) ceramics were elaborated by the conventional ceramic technique. Sintering has been made at 1523 K for 2 h. The crystal structure was investigated by X-ray diffraction with CuKα radiation at room temperature. As a function of composition, these compounds crystallize with tetragonal or cubic symmetry. Dielectric measurements show that the materials have a classical ferroelectric behavior for compositions in the range 0.10 ≤ x ≤ 0.15 and relaxor one for compositions in the range 0.15 < x ≤ 0.30. Temperatures T _C or T _m decrease as x content increases. The ferroelectric behavior has been confirmed by hysteresis characterization. For x = 0.1, a piezoelectric coefficient d ₃₁ of 42.146 pC N⁻¹ was obtained at room temperature. The evolution of the Raman spectra was studied as a function of temperature for x = 0.1.     

Electrical properties of Zn2(TiaSnb)1 ? xZrxO4 solid solutions

The electrical conductivity, band gap, dielectric permittivity, and molar polarizability of Zn₂(Ti _a Sn _b )_{1 − x} Zr _x O₄ solid solutions have been determined. All of the synthesized samples are dielectrics with semiconducting behavior of conductivity. The phase diagram of the Zn₂TiO₄-Zn₂SnO₄-Zn₂ZrO₄ system is presented.