衬底温度对ITO和ITO:Zr薄膜性能的影响

利用双靶共溅法在玻璃衬底上沉积了Zr掺杂ITO薄膜,对比研究了在不同衬底温度下ITO和ITOZr薄膜性能的变化.XRD和AFM分析表明,ITOZr比ITO薄膜具有更好的晶化程度和较低的表面粗糙度,Zr的掺入促进薄膜晶化的同时导致了(222)晶面向(400)晶面取向的转变.室温下Zr的掺杂显著改善了薄膜的光电性能,方阻由260.12 Ω降为91.65Ω,光学透过率也有所上升.随着温度的上升,方阻可达到10 Ω,薄膜也表现出明显的"B-M"效应,通过直接跃迁的模型得出ITOZr比ITO薄膜具有更宽的光学禁带.共溅法制备的ITOZr薄膜比传统的ITO薄膜展现了更好的综合性能.     

掺杂SnS薄膜的制备及电学性能

硫化锡（SnS）具有很高的光吸收系数和合适的禁带宽度，又无毒性，因此在太阳电池等光电器件中具有潜在应用价值。本文用真空蒸发法制备掺杂的SnS薄膜，掺杂源有Sb、Sb：O3、Se、Te、In、In2O3、Se和In2O3的混合物。对各种掺杂SnS薄膜的厚度、电流-电压（Ⅰ—Ⅴ）特性等进行了表征，并计算了其电阻率和光电导与暗电导的比值（Gphoto／Gdark）。结果表明较有效的掺杂源是Sb，Sb掺杂的薄膜电阻率比纯薄膜的电阻率降低四个数量级，Gphoto／Gdark增加约一倍。同时，研究了Sb掺杂量对SnS薄膜电学性能的影响，表明Sb的最佳掺入量约为1．3wt％～1．5wt％。     

反应溅射法制备铝掺杂氧化锆薄膜及其热稳定性的研究

采用反应射频磁控溅射在Si（100）基片上制备了不同微结构的铝掺杂氧化锆薄膜．利用高分辨透射电子显微镜、X射线衍射仪和原子力显微镜研究了退火温度对铝掺杂氧化锆薄膜热学稳定性、界面稳定性和表面粗糙度的影响，探讨了铝掺杂氧化锆薄膜的，I-V特性与薄膜的微观状态之间的关系．研究结果显示：在铝掺杂氧化锆薄膜中掺入不同量的Al对薄膜的微结构有较大影响，随着薄膜中Al／Zr原子含量比的增大，薄膜微结构经历从α—ZrO2（未掺杂）到t-（Zr，Al）O2相和c-（Zr，Al）O2相（Al／Zr=1／4）再到a-（Zr，Al）O2（Al／Zr=4／5）的变化；与纯ZrO2薄膜相比，Al掺杂氧化锆（Al／Zr=4／5）薄膜的结晶化温度明显提高，薄膜热学稳定性得到改善．     

ITO/TiO2-xNx/NiO复合电极制备及其光电化学性能

以三乙胺为氮源,钛酸丁酯为钛源,采用溶胶-凝胶法制备氮掺杂TiO2,并用旋涂法制备ITO导电玻璃为基材的氮掺杂TiO2薄膜,经300℃、400℃、500℃处理制得ITO/TiO2-xNx薄膜。采用XRD、XPS、SEM和UV-Vis吸收光谱等对样品进行表征,并进行光电化学性能测定,结果表明500℃处理制得的ITO/TiO2-xNx薄膜具有最佳的光电催化性能。进一步采用化学沉积法在ITO/TiO2-xNx薄膜表面上沉积多孔NiO薄膜,制得ITO/TiO2-xNx/NiO复合薄膜,研究表明该复合薄膜具有很好的光电致色特性及储放电性能,可应用于光电致变色和光电能量储存领域。     

电解液对TiO_2薄膜电极光电化学性能的影响

本文先用直流磁控溅射法分别在ITO导电玻璃基底上沉积TiO2和TiN二种纳米薄膜,再在500℃的马弗炉氧化性气氛下进行退火处理,制得TiO2/ITO和TiO2-xNx/ITO薄膜电极。样品的结构和成分用XRD和XPS进行表征。然后分别采用pH=10的Na2CO3/NaHCO3缓冲溶液和1M KOH水溶液作为电解液,在三电极体系中用线性扫描伏安法（LSV）和电流时间曲线（i-t）法测定二种薄膜电极在光照和暗态下的光电化学性能。研究结果表明：以1M KOH水溶液作为电解液比pH=10的Na2CO3/NaHCO3缓冲溶液作为电解液更有利于样品发挥其光催化活性;同时,TiO2-xNx/ITO薄膜电极比TiO2/ITO具有更好的光电化学性能。     

氧气含量对ITO薄膜电学性能及其稳定性的影响

调节磁控溅射工艺中氧气的含量,在玻璃基片上制备了ITO薄膜。研究氧气含量对ITO薄膜光学、电学性能的影响,以及在高温、高温高湿、碱性环境及经时的电学性能的稳定性。结果表明,氧气含量的增加会降低沉积速率;氧气含量对ITO薄膜在可见光区内的透光率影响较小,但会引起峰值透光率蓝移;对电学性能及其稳定性影响较大,氧气含量在1%(体积分数)以内时,电学性能呈先降低后升高的变化,在0.4%(体积分数)时具有较低的电阻率,且在各种环境中具有较高的稳定性;氧气含量高于1%(体积分数),电学性能及其稳定性变差。     

FeS2/TiO2复合薄膜光电性能

采用溶液浸渍法在ITO导电玻璃表面的多孔TiO2薄膜上沉积了FeS2薄膜.使用Fe2O3粉末保护裸露在外的ITO导电膜在硫气氛中热处理后,制得了FeS2/TiO2复合薄膜.应用B531/H数显测厚指示表、数字式四探针测试仪、XJCM-8太阳电池测试仪等研究了FeS2/TiO2复合薄膜的厚度、ITO导电玻璃的电阻率以及FeS2/TiO2复合薄膜的光电性能.结果表明：此方法制得的FeS2/TiO2复合薄膜具有良好的光电性能;且ITO导电膜的电阻率变化较小.因而适宜制备色素增感太阳能电池（DSSC）.     

溶胶-凝胶法制备的ITO薄膜电学及光学性能的研究

以无机盐为出发原料．采用溶胶-凝胶法制备了氧化铟锡(ITO)透明导电薄膜。进一步研究了热处理气氛、温度、Sn掺杂量时In2O3薄膜电学及光学性能的影响。分别在氮气、真空和空气3种环境下对薄膜进行热处理．结果表明真空热处理后薄膜的导电性最好。研究了薄膜方块电阻随锡掺杂量的变化．发现薄膜的方阻随掺锡量的增加先减小后增加,并在掺杂量为7mol％左右时达到最低;另外探讨了热处理温度对薄膜光电性能的影响．结果发现薄膜方块电阻随热处理温度的升高而减小．且热处理温度高于700℃后变化不显著,薄膜在可见光区平均透过率随热处理温度升高呈上升趋势。本研究所制得的薄膜可见光区(400-800nm)平均透过率可达85％、方阻约为66Ω。     

透明导电AZO/Cu双层薄膜制备及其性能

采用直流磁控溅射方法在玻璃衬底上室温生长了AZO/Cu双层薄膜,Cu层厚度控制在9nm,研究了AZO层厚度对薄膜电学和光学性能的影响。当AZO层厚度为20～80nm时,AZO/Cu双层薄膜具有良好的综合光电性能,方块电阻为12～14Ω/sq,可见光平均透过率为70～75%,品质因子为2×10-3～5×10-3Ω-1。AZO/Cu双层薄膜可以观察到Cu（111）和ZnO（002）的XRD衍射峰。通过退火研究表明,AZO/Cu双层薄膜的光电性能可在400℃下保持稳定,具有良好的热稳定性。本研究制备的透明导电AZO/Cu双层薄膜具有室温制程、综合光电性能良好、结晶性能较好、稳定性高的优点,可以广泛应用于光电器件透明电极及镀膜玻璃等领域。     

Cr-Si-Ni电阻薄膜在模拟环境中的电学稳定性及腐蚀行为

研究了磁控溅射法制备的Cr-Si-Ni电阻薄膜在不同模拟环境介质溶液中的电学稳定性及腐蚀行为.结果表明,500℃热处理后纳米晶结构的Cr-Si-Ni电阻薄膜在25℃的模拟海洋、工业、酸性及碱性环境介质溶液中浸泡240h后,薄膜试样的相对电阻变化值(ΔR/R)分别为0.27%、0.08%、0.96%、3.31%.说明薄膜在上述4种环境中电学稳定性和耐腐蚀性能从高到低依次为:工业环境、海洋环境、酸性环境、碱性环境.薄膜在4种溶液中都能发生自钝化现象而在膜层表面形成SiO2保护层,形成的钝化膜在模拟的工业环境中最稳定.     

High thermal stability,electrical and optical properties of amorphous IGZO film by coating ultrathin amorphous ITO film as barrier layer

As one kind of well known amorphous transparent conductive oxide films, In–Ga–Zn–O (IGZO) based films were broadly used as electric functional layer in optoelectronic devices. As IGZO film is sensitive to temperature and oxygen, and its electrical and optical properties may probably be deteriorated after subsequent high temperature and air atmosphere. In this work, amorphous indium tin oxide (ITO) layer with two adjustable type of thickness were employed to improve the thermal stability of IGZO films. The doubled ITO/IGZO films were deposited on glass by magnetron sputtering and annealed at high temperatures subsequently to investigate its thermal stability. Accordingly, the crystal structure, optical and electrical properties of ITO/IGZO films were further studied. The XRD results demonstrated that the annealed IGZO films could keep amorphous structure, and the ITO/IGZO films were consisted of uniform small particles which showed comparable dense structure and closely integration with the glass substrate. Furthermore, the sheet resistance results indicated that the increased thickness of top ITO film could suppress oxygen and improve thermal stability of electrical property. Moreover, the transmittance in the visible range was about 85%, and showed a little increase after annealing. The protective ITO layer was found to keep improved thermal stability, good electrical and optical properties at temperatures up to 550 °C.     

Improvement in the corrosion-erosion resistance of 304 stainless steel with alloyed yttrium

It has been previously demonstrated that yttrium can improve the resistance of stainless steel to sliding wear in corrosive environment. However, the mechanism responsible for the beneficial effect of yttrium on corrosive wear is not well understood. In this work, the erosion behavior of Y-free and Y-containing 304 stainless steel in a dilute H₂SO₄ slurry containing silica sand was investigated, with the aim of exploring the role that yttrium plays. The failure and self-healing of passive films on Y-free and Y-containing 304 stainless steel samples under combined attack by corrosion and mechanical scratch were studied, using an electrochemical scratch technique. The failure of the passive films during dry scratch and identation was also investigated using a micro-mechanical probe with in situ monitoring changes in the electrical contact resistance. In addition, effect of yttrium on electron work function was investigated. All the results demonstrated that yttrium effectively improved properties of the passive film, including corrosion resistance, mechanical behavior and the film stability, resulting in enhanced resistance to corrosion-erosion.     

Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO₂) between the ITO film and the PET substrate. ITO films deposited on SiO₂-coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO₂-coated PET are 85% and 0.90 × 10^− 3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO₂-coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO₂ buffer layer.     

ITTO薄膜的耐腐蚀稳定性和表面能研究

为了提高透明导电薄膜的综合性能,采用磁控溅射法制备了Ta掺杂ITO(ITTO)薄膜,对薄膜在不同模拟环境介质溶液中的电学稳定性及电化学行为进行了测试,分析了处于特定介质环境中薄膜的相对电阻变化和表面形貌;基于薄膜表面接触角的测量,计算了薄膜的表面能和极性度。结果表明:薄膜在各环境介质中都发生了自钝化现象,ITTO薄膜显示了较好的化学稳定性和热稳定性,除了晶体结构的影响之外,稳定性较好的氧化钽也提高了薄膜的化学稳定性和热稳定性;掺杂使得薄膜的接触角减小,表面能增大,表面极性度增加,薄膜的表面状态和靠近费米能级处引入d轨道的活性高价原子的存在是促进表面能提高的主要原因。     

Comparative study on early stages of film growth for transparent conductive oxide films deposited by dc magnetron sputtering

Early stages of film growth were investigated on three different kinds of representative transparent conductive oxide films including tin doped indium oxide (ITO), indium zinc oxide (IZO) and gallium doped zinc oxide (GZO) films deposited on unheated alkali free glass substrates by dc magnetron sputtering. The variations in sheet resistance, film coverage and average surface roughness showed clearly that ITO and GZO films possessed Volmer-Weber growth mode. In contrast, the evolution of islands is not clearly observed for IZO film. The nucleation density of IZO film is considered to be much higher than that of ITO and GZO films.     

AZ31镁合金表面磁控溅射Zr(Al,Ti)-SiN_x复合薄膜及其耐蚀性能

镁合金表面沉积薄膜可以提高其耐蚀性,但现有的几种沉积方法得到的膜疏松、与基体结合力差,影响了其耐腐蚀性能.为此,采用磁控溅射法在AZ31镁合金表面制备了Al,Zr,Ti膜及其与SiN_x的复合薄膜.用扫描电镜、X射线衍射、XPS研究了金属膜及其与SiNi_x复合薄膜的晶体结构、表面形貌和化学成分.结果表明:所制备的SiN_x薄膜为非晶态的富N膜;Zr膜的耐腐蚀性最好,Al膜的保护性最差;Zr-SiN_x复合薄膜比AZ31镁合金的腐蚀电流密度降低了3个数量级,Ti-SiN_x复合薄膜在阳极极化区出现了钝化.SiN_x复合薄膜的耐腐蚀性优于AZ31镁合金和单一金属膜.     

Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films

Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments(O_2, in-Air, N2 and vacuum) resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N_2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical(structural, electrical) and chemical properties: The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO(oxygen vacancy).     

Corrosion behaviour of amorphous Ni–Si thin films on AISI 304L stainless steel

Abstract

Nanoscale Ni – Si thin films are widely used in commercial microelectronic devices because of their promising electrical properties as well as their chemical stability. However, their application in corrosive environment has not been frequently addressed in the literature. In this study, amorphous Ni_0.66Si_0.33, Ni_0.40Si_0.60, and Ni_0.20Si_0.80 thin films are prepared on AISI 304L stainless steel by means of ion-beam sputter (IBS) deposition and their corrosion behaviour is studied using potentiodynamic polarisation measurements. The electrochemical measurements were conducted in 0.05M HCl solution at room temperature. By means of optical interferometer, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), the surface morphology and chemical composition of the thin films were examined before and after the electrochemical measurement. The evaluated results showed that the Ni–Si thin films may exhibit improved corrosion resistance over the 304L substrate provided that Si content is high enough to facilitate the formation of a Si-rich passive film.     

Inkjet-printing of indium tin oxide (ITO) films for transparent conducting electrodes

Indium-tin-oxide (ITO) films have been prepared by inkjet-printing using ITO nanoparticle inks. The electrical and optical properties of the ITO films were investigated in order to understand the effects of annealing temperatures under microwave. The decrease in the sheet resistance and resistivity of the inkjet-printed ITO films was observed as the annealing temperature increases. The film annealed at 400 °C showed the sheet resistance of 517 Ω/sq with the film thickness of ∼580 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films, Ag-grid was printed in between two layers of inkjet-printed ITO. With 3 mm Ag-grid line-to-line pitch, the Ag-grid inserted ITO film has the sheet resistance of 3.4 Ω/sq and the transmittance of 84% after annealing at 200 °C under microwave.     

Structural,electrical, optical properties and reliability of ultra-thin tin doped indium oxide films for touch panels

Ultra-thin ITO films with thickness of 4–56 nm were deposited on glass by dc magnetron sputtering using 5 wt% SnO₂ doped ITO target. The effect of film thickness on the structural, electrical, optical properties and reliability was investigated for its application to touch panels. The 4 nm thick ITO film shows amorphous structure and other films present polycrystalline structure and the (222) preferred orientation. The ultra-thin ITO films show smooth surface with low Ra surface roughness smaller than 1 nm. The sheet resistance and visible transmittance of the ITO films decrease with the increase in film thickness. The 4 nm thick ITO film shows the highest resistivity (3.08 × 10^?3 Ω cm) with low carrier density and Hall mobility, and other films have excellent conductivity (<4.0 × 10^?4 Ω cm). The ITO films show high transmittance (>85 %) in visible light range and do not generate interference ripples between film and substrate interface. The ITO films with thickness of 18–56 nm show stable reliability under high temperature, high temperature & high humidity and alkaline environmental conditions. The only electrical degradation corresponds to the increase of sheet resistance in the ITO films with thickness of 4–12 nm.