Elastic, piezoelectric, and dielectric properties of 0.955Pb(Zn(1/3)Nb(2/3))O(3)-0.45PbTiO(3 ) single crystal with designed multidomains

The elastic, piezoelectric, and dielectric properties of a 0.955Pb(Zn(1/3)Nb(2/3))O(3)-0.045PbTiO(3 ) (PZN-4.5%PT) multi-domain single crystal, poled along [001] of the original cubic direction, have been determined experimentally using combined resonance and ultrasonic methods. At room temperature, the PZN-4.5%PT single crystal has rhombohedral symmetry. After being poled along [001], four degenerate states still remain. Statistically, such a domain-engineered crystal may be treated as having an average tetragonal symmetry, and its material constants were determined based on 4 mm symmetry. It was confirmed that the electromechanical coupling coefficient k(33) for the domain-engineered samples is >90%, and the piezoelectric constant d(33) is >2000 pC/N. A soft shear mode with a velocity of 700 m/s was found in the [110] direction. From the measured experimental data, the orientational dependence of phase velocities and electromechanical coupling coefficients was calculated. The results showed that the transverse and longitudinal coupling coefficients, k(31) and k(33), reach their maximum along [110] and [001], respectively.     

Characterization of flux-grown PZN-PT single crystals for high-performance piezo devices

Relaxor ferroelectric Pb(Zn(1/3)Nb(2/3))O(3-x)PbTiO(3) (PZN-PT) and Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)(PMN-PT) single crystals are the potential candidates for future high-performance piezoelectric devices due to their exceptionally high dielectric and piezoelectric properties. Characterization on flux-grown PZN-PT single crystals of different orientations revealed that PZN-(6-7)%PT single crystals show good homogeneity in dielectric and electromechanical properties and composition. When poled in [001] direction, these crystals exhibit high longitudinal-mode properties with dielectric constant (K(T)) approximately equal to 7000, piezoelectric coefficients (d(33)) approximately equal to 2800 pC/N, and electromechanical coupling factors (k(33)) > or = 0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse-mode dielectric and piezoelectric properties with K(T) > or = 5000, d(32) approximately equal to -3800 pC/N and k(32) > or = 0.90. [011]- poled PZN 6%PT has d(32) approximately equal to -3000 pC/N and comparable k(32) and K(T) values. In comparison with melt-grown PMNPT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarization temperatures (TDP).     

Full tensorial elastic, piezoelectric, and dielectric properties characterization of [011]-poled PZN-9%PT single crystal

Transverse piezoelectric property of 0.91Pb(Zn(1/3)Nb(2/3))O(3)-0.09PbTiO(3) (PZN-9%PT) single crystal poled along [011] direction under different fields have been investigated, the poling field giving the best property was between 350 and 650 V/mm at room temperature. Full tensorial elastic, dielectric, and piezoelectric properties of PZN-9%PT single crystal poled along the [011] direction under 500 V/mm have been determined by resonance and ultrasonic methods. It was found that the electromechanical coupling coefficients k(32) and k(33) can reach 0.90 and 0.89 and the piezoelectric coefficients d(32) and d(15) are -1705 and 2012 pC/N, respectively. This complete set of physical properties can provide convenience for piezoelectric device fabrication and domain engineering studies.     

Influence of spinel substrate and over-layer for enhanced SAW and AO properties with KNbO3 thin film

Surface acoustic wave (SAW) propagation characteristics have been studied using modeling calculations for a potassium niobate (KNbO/sub 3/) thin film-layered structure with [001] and [110] orientation on a single crystal spinel (MgAl/sub 2/O/sub 4/) substrate, and a spinel buffer layer on silicon. Variation in the electromechanical coupling and acoustic attenuation has been compared. A significantly high value of coupling factor (k/sub max//sup 2/=23%) is obtained for the [001]KNbO/sub 3//spinel structure by introducing an optimum thickness of spinel over-layer for potential wide bandwidth SAW device applications. The dispersion characteristics with the [110] KNbO/sub 3/ orientation indicate an initial peak in the coupling coefficient value (k/sub max//sup 2/=8.8%) at a relatively low KNbO/sub 3/ film thickness that appears attractive for fabricating devices with thinner films. The KNbO/sub 3/ film with [001] orientation is found attractive for efficient acousto-optic (AO) device application with the formation of a symmetric waveguide structure (spinel(0.5 /spl mu/m)/KNbO/sub 3/(1.0 /spl mu/m)/spinel). A high value of k/sup 2/=23.5% with 50% diffraction efficiency has been obtained for the spinel(0.5 /spl mu/m)/KNbO/sub 3/(1.0 /spl mu/m)/spinel structure at 1 GHz SAW frequency and 633 nm optical wavelength at a very low input drive power of 15.4 mW.     

Electric-field and stress effects on depoling and overpoling phenomena in [001]-poled transverse mode Pb(Zn1/3Nb2/3)O3-(6-7)%PbTiO3 single crystal of [110] length cut

Solid-solution Pb(Zn(1/3)Nb(2/3))O(3)-PbTiO(3) (PZN-PT) single crystals, touted as next-generation piezoelectric materials, have been studied extensively in the past decade. This work addresses the advantages and limitations of transducers made of transverse mode PZN-(6-7)%PT single crystals of [110](L) X [001](T)(P) cut. This cut exhibits superior electromechanical properties, with k(31) ≈ 0.85 and d(31) ≈-1450 pC/N, and an extremely high d(31)/S(E)(11) value of >35 C/m(2). It also has relatively high overpoling, i.e., rhombohedralto- tetragonal phase transformation, field of ≈2 kV/mm. This overpoling field further decreases with increase in axial compressive stress. Despite these good attributes, this crystal cut has a low depoling field of ≤ 0.3 kV/mm, a result of low coercive fields of [001]-poled relaxor-based single crystals, which decreases further with increasing axial compressive stress, limiting its bipolar drive capability. The axial compressive stress required to cause overpoling via rhombohedral-to-tetragonal phase transformation of relevant domain variants in the crystal is found to be >90 MPa. In contrast, this crystal cut depolarizes at comparatively low axial tensile stress of ≈15 MPa, the magnitude of which is not significantly affected by the moderate forward field applied.     

Unique Cuspidal Features in the Group-Velocity Surface of Barium Sodium Niobate and Rochelle Salt

Crystals that have sufficient elastic anisotropy can exhibit cuspidal features in the group-velocity surface so that the group velocity is double- or triple-valued. In nonpiezoelectric crystals such cuspidal features occur only in the quasi-transverse (QT) modes when the wave vectors are restricted to the symmetry planes of the crystal. Sufficient piezoelectric stiffening of the elastic constants, however, can generate cuspidal features in other modes when the wave vectors are restricted to these same symmetry planes. In barium sodium niobate (BSN) there is insufficient elastic anisotropy to generate cuspidal features when piezoelectric stiffening is neglected. The addition of piezoelectric stiffening changes only the quasi-longitudinal (QL) and QT modes in the (100) and (010) planes, and changes only the pure transverse (T) mode in the (001) plane. There is sufficient piezoelectric stiffening, however, to generate small cuspidal features in the QL mode about the [001] and axes in the (100) and (010) planes. In Rochelle salt, however, there is sufficient elastic anisotropy to generate cuspidal features in the QT modes about collinear axes along nonsymmetry directions in the (100) and (010) planes. The addition of piezoelectric stiffening changes only the T mode in the (100), (010) and (001) symmetry planes. This piezoelectric stiffening is large enough, however, to generate large cupsidal features in the T mode about new collinear axes along nonsymmetry directions in the (010) and (001) planes.     

Single crystal PZN/PT-polymer composites for ultrasound transducer applications

Single crystal relaxor ferroelectrics of PZN-8%PT were investigated for potential application in ultrasound transducers. The full set of electromechanical properties was determined using combined resonance and laser interferometry techniques. Ultra-high length extensional coupling (k(33)) of 0.94 was observed, a 25% increase over Navy Type VI PZT ceramics. The thickness extensional coupling (k(t)) of 0.48 was comparable to PZT compositions, and the compliance S(33)(E) was a factor of six greater. To maximize height extensional coupling (k'(33)), while minimizing length extensional coupling k(31) in array elements, it was necessary to align the elements along the 100 crystallographic direction in the x-y plane. Mode coupling plots and test samples for array elements determined that width-to-height ratios of less than 0.5 were desired, similar to the requirement for polycrystalline PZT ceramics. Modeling of 1-3 composites and experimental results demonstrated that thickness coupling greater than 0.80 could be achieved with a 40% to 70% volume fraction of PZN-PT. Although this is a substantial increase over PZT 1-3 composites, with a thickness coupling coefficient of 0.66, it represents a smaller fraction of the length extensional coupling k(33). This reduction may be a consequence of the increased compliance of PZN-PT, which results in significant clamping by the polymer matrix. Ultrasonic transducers fabricated using PZN-8%PT 1-3 composites achieved experimental bandwidths as high as 141%. The pulse-echo responses displayed good agreement with modeled results using the Redwood equivalent circuit.     

Temperature stability of magnetic field-induced strain and field-controlled shape memory effect on Ni/sub 52/Mn/sub 16.4/Fe/sub 8/Ga/sub 23.6/ single crystals

The temperature dependence of the magnetic field-induced strain (MFIS) and the field-controlled shape memory effect in Ni/sub 52/Mn/sub 16.4/Fe/sub 8/Ga/sub 23.6/ single crystals were investigated by measuring the MFIS and measuring the magnetic field-enhanced transformation strain with a field bias applied in the [001] and [010] directions of the parent phase, respectively. The results show that such material combined with the martensitic transformation can product large field-enhanced transformation strain and large MFIS. The strain accompanying the martensitic transformation is -1.61% in zero field and can be enhanced to -3.30% by a field of 960 kA/m. A MFIS of 1.04% has been induced along [001] in unstressed crystals with saturated magnetic field of 600 kA/m applied along the same direction at near martensitic transformation temperature. It was found that the MFIS is almost temperature independent; the maximum decrease of the saturated MFIS is less than 10%, from 265 K to 100 K. This well-behaved temperature response makes this alloy particularly valuable for industrial and military smart actuators and transducers. Furthermore, it was found that the direction in which the MFIS has the largest value is always the [001], namely, the growth direction of the crystals.     

Electromechanical coupling properties of [001], [011] and [111] poled Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 single crystals

The electric field induced “butterfly” curves and polarization loops, and the stress induced strain and polarization responses of [001], [011] and [111] oriented Pb(Mg_1/3Nb_2/3)O₃-0.32PbTiO₃ (PMN-0.32 PT) relaxor ferroelectric single crystals have been systematically investigated by experiment study. The focus is on the effect of constant compressive bias stress on the electromechanical coupling behavior along three crystallographic directions of PMN-0.32 PT single crystals. Dependence of the coercive field, remnant polarization, dielectric constant, and piezoelectric coefficient on the bias stress has been quantified for PMN-0.32 PT single crystals oriented in three different directions. Obtained results show that the large piezoelectric responses under zero compressive stress in [001] and [011] orientation are dominated by intrinsic crystal lattice while the engineered domain structure has a relatively minor effect. It is found that observed responses under stress cycle for [001] oriented crystals are due to polarization rotation and phase transformations. However, those for [011] and [111] oriented crystals are due to domain switching. The “butterfly” curves and polarization loops driven by electric field under different bias compression are described by two non-180° domain switching.     

Linear electro-optic properties of orthorhombic PZN-8%PT single crystal

The optical transmittance spectra of relaxor ferroelectric 0.92Pb(Zn(1/3)Nb(2/3))O(3)-0.08PbTiO(3) (PZN-8%PT) single crystals poled along different directions have been systematically studied at room temperature. After being poled along the [011] direction, the transmittance of induced orthorhombic PZN-8%PT single crystal is more than 50% from 0.5 to 5.7 μm, which is much higher than that poled along the [001] and [111] directions. The refractive indices and linear electro-optic properties of the orthorhombic PZN-8%PT single crystal were characterized at a wavelength of 632.8 nm. Large electro-optic responses were observed, (γ33) = 220 pm/V, (γ13) = 62 pm/V, and (γ23) = 23 pm/V. Thus, orthorhombic PZN-8%PT single crystal is a promising material for high-performance electro-optic devices.     

高性能铌镁酸铅-钛酸铅定向压电陶瓷的研究

用定向凝固技术制备了择优方向为[112]的0．70Pb(Mg1／3Nb2／3)O3—0．30PbTiO3高性能定向压电陶瓷．该陶瓷[112]方向的取向度约为35％，准静态压电常数d33约为1500～1600pC／N，耦合系数κt～0．51，κ33～0．82，22kV／cm时的场致应变约为0．23％。     

Microstructure of Epitaxial La_(0.7)Ca_(0.3)MnO_3 Thin Films Deposited by Direct Current Magnetron Sputtering on LaAlO_3 Substrate

Transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) have been used to study the microstructural properties of La0.7Ca0.3MnO3 films on (001) LaAlO3 substrates prepared by direct current magnetron sputtering technique.The as-grown thin films with different thickness are perfectly coherent with the substrates.The film suffers a tetragonal deformation in the area near the interface between the film and the substrate.With increasing thickness, the film is partially relaxed.It was found that La0.7Ca0.3MnO3 films consist of two types of oriented domains described as: (1) (110)f[001]f||(001)s[100]sand (110)f[001]f||(001)s[100]s and (2) (110)f[001]f||(001)s[010]s and (110)f[001]f//(001)s[010]s.Upon annealing, the film is relaxed by the formation of misfit dislocations.Other than misfit dislocations, two types of threading dislocations with Burgers vector of <100> and <110> were also identified.     

Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study

Gallium nitride (GaN) is a high-temperature semiconductor material of considerable interest. It emits brilliant light and has been considered as a key material for the next generation of high frequency and high power transistors that are capable of operating at high temperatures. Due to its anisotropic and polar nature, GaN exhibits direction-dependent properties. Growth directions along [001], [1?10] and [110] directions have all been synthesized experimentally. In this work, molecular dynamics simulations are carried out to characterize the mechanical properties of GaN nanowires with different orientations at different temperatures. The simulation results reveal that the nanowires with different growth orientations exhibit distinct deformation behavior under tensile loading. The nanowires exhibit ductility at high deformation temperatures and brittleness at lower temperature. The brittle to ductile transition (BDT) was observed in the nanowires grown along the [001] direction. The nanowires grown along the [110] direction slip in the {010} planes, whereas the nanowires grown along the [1?10] direction fracture in a cleavage manner under tensile loading.     

Ferroelectrically active acoustic wave propagation

The ferroelectrically active acoustic wave equation including electrostriction effects is derived from nonlinear constitutive equations of stress and electric displacement for ferroelectric materials exhibiting significant electrostrictive strain. Electrically controllable acoustic wave propagation is predicted by solving the equation as a function of various acoustic variables, e.g., wave excitation, polarization, dc bias, etc. As examples, the elastic, piezoelectric, and ferroelectric acoustic waves and the electromechanical coupling factors are computed as a function of wave propagation in the [100]-[010] plane of BaTiO3 under thickness excitation mode.     

Phase-transition temperatures and piezoelectric properties of (Bi1/2Na1/2)TiO3-(Bi1/2Li1/2)TiO3-(Bi1/2K1/2)TiO3 lead-free ferroelectric ceramics.

The phase-transition temperatures and piezoelectric properties of x(Bi(1/2)Na(1/2))TiO3-y(Bi(1/2)Li(1/2))TiO3-z(Bi(1/2)K(1/2))TiO3 [x + y + z = 1] (abbreviated as BNLKT100(y)-100(z)) ceramics were investigated. These ceramics were prepared using a conventional ceramic fabrication process. The phase-transition temperatures such as depolarization temperatures T(d), rhombohedraltetragonal phase transition temperature T(R-T), and dielectric-maximum temperature T(m) were determined using electrical measurements such as dielectric and piezoelectric properties. The X-ray powder diffraction patterns of BNLKT100(y)-100(z)) show the morphotropic phase boundary (MPB) between rhombohedral and tetragonal at approximately z = 0.20, and the piezoelectric properties show the maximum at the MPB. The electromechanical coupling factor k(33), piezoelectric constant d(33) and T(d) of BNLKT4-20 and BNLKT8-20 were 0.603, 176 pC/N, and 171 degrees C, and 0.590, 190 pC/N, and 115 degrees C, respectively. In addition, the relationship between d33 and Td of tetragonal side and rhombohedral side for BNLKT4-100z and BNLKT8-100z were presented. Considering both high Td and high d(33), the tetragonal side of BNLKT4-100z is thought to be the superior composition. The d(33) and T(d) of BNLKT4-28 were 135 pC/N and 218 degrees C, respectively. Moreover, this study revealed that the variation of T(d) is related to the variation of lattice distortion such as rhombohedrality 90-alpha and tetragonality c/a.     

Simple model for piezoelectric ceramic/polymer 1-3 composites used in ultrasonic transducer applications

A theoretical model is presented for combining parameters of 1-3 ultrasonic composite materials in order to predict ultrasonic characteristics such as velocity, acoustic impedance, electromechanical coupling factor, and piezoelectric coefficients. Hence, the model allows the estimation of resonance frequencies of 1-3 composite transducers. This model has been extended to cover more material parameters, and they are compared to experimental results up to PZT volume fraction ν of 0.8. The model covers calculation of piezoelectric charge constants d₃₃ and d₃₁. Values are found to be in good agreement with experimental results obtained for PZT 7A/Araldite D 1-3 composites. The acoustic velocity, acoustic impedance, and electromechanical coupling factor are predicted and found to be close to the values determined experimentally     

K3C60晶体中钾离子的平衡位置

分析八面体空隙中心碱金属的相互作用势能,研究碱金属沿（１１１）,（１１０）和（１００）三个不同方向移动时,势能的变化情况,结果表明,对于Ｋ３Ｃ６０晶体,Ｋ＾＋离子在三个不同方向上都存在非中心平衡位置,而且在三个不同方向上,非中心平衡位置相对中心的偏移量不同,在（１１１）轴上为０．９８Ａ,在（１１）轴方向上为０．７８Ａ,在（１００）方向上为０．５６Ａ,在（１１１）轴方向的非中心的势能是最小值,为－５     

Microstructure of Epitaxial La0.7Ca0.3MnO3 Thin Films Deposited by Direct Current Magnetron Sputtering on LaAlO3 Substrate

Transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) have been used to study the microstructural properties of La_0.7Ca_0.3MnO₃ films on (001) LaAlO₃ substrates prepared by direct current magnetron sputtering technique. The as-grown thin films with different thickness are perfectly coherent with the substrates. The film suffers a tetragonal deformation in the area near the interface between the film and the substrate. With increasing thickness, the film is partially relaxed. It was found that La_0.7Ca_0.3MnO₃ films consist of two types of oriented domains described as: (1) (110)_f [001]_f||(001)_s[100]_s and (1¹10)_f [001]_f||(001)_s[100]_s and (2) (110)_f [001]_f||(001)_s[010]_s and (1¹10)_f [001]_f//(001)_s[010]_s. Upon annealing, the film is relaxed by the formation of mis¯t dislocations. Other than mis¯t dislocations, two types of threading dislocations with Burgers vector of <100> and <110> were also identified.     

Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3压电陶瓷的温度稳定性研究

探讨了硬性添加物MnO2、软性添加物Nb2O5和两性添加物Cr2O3对锑锰锆钛酸铅Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3(简称PMSZT5)压电陶瓷的相组成及温度稳定性的影响.研究结果发现:各掺杂组成在900℃的煅烧温度下,都可以得到钙钛矿结构.随着各掺杂离子的增大,四方相含量减少,准同型相界向三方相移动.综合考虑离子掺杂对PMSZT5压电陶瓷的机电性能及温度稳定性的研究结果表明:锰过量较其它铌和铬掺杂的温度稳定性更好,机电性能最佳的PMSZT5+0.1wt%MnO2的组成,ε33T/ε0=1560,d33=350pC/N,Kp=0.63,25~80℃的fr、K31和d31平均温度系数分别为72×10-6/℃、0.027%/℃和0.100%/℃.     

Mg/sub x/Zn/sub 1-x/O: a new piezoelectric material

Piezoelectric ZnO thin films have been successfully used for multilayer surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. Magnesium zinc oxide (Mg/sub x/Zn/sub 1-x/O) is a new piezoelectric material, which is formed by alloying ZnO and MgO. Mg/sub x/Zn/sub 1-x/O allows for flexibility in thin film SAW device design, as its piezoelectric properties can be tailored by controlling the Mg composition, as well as by using Mg/sub x/Zn/sub 1-x/O/ZnO multilayer structures. We report the metal-organic chemical vapor deposition (MOCVD) growth, structural characterization and SAW evaluation of piezoelectric Mg/sub x/Zn/sub 1-x/O (x<0.35) thin films grown on (011~2) r-plane sapphire substrates. The primary axis of symmetry, the c-axis, lies on the Mg/sub x/Zn/sub 1-x/O growth plane, resulting in the in-plane anisotropy of piezoelectric properties. SAW test devices for Rayleigh and Love wave modes, propagating parallel and perpendicular to the c-axis, were designed and fabricated. Their SAW properties, including velocity dispersion and piezoelectric coupling, were characterized. It has been found that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg composition in piezoelectric Mg/sub x/Zn/sub 1-x/O films.