Impedance Characteristics of MgO-ZrO2 Ceramics Doped with CeO2

The ultrafine CexMg0.06Zr1-xO1.94 （ x = 0 16% ） powders were synthesized by a chemical co-precipitated method. The pressed compacts were sintered in air at 1300, 1400, 1500, 1600℃ for 3 h, respectively. The phase of the ceramics was characterized by the X-ray diffraction （XRD） method. The conductivity of the ceramics was measured by the AC complex impedance technique at 700- 1200 ℃. The ratio of the cubic phase in the ceramics improves with increasing CeO2 content, leading to a enlargement of the oxygen ionic migration channel. The contact resistance between conductive phase particles decreases with increasing CeO2 content, leading to a lower migration hindrance of the oxygen ionic. Consequently, the ionic conductivity of the ceramics improves with increas- ing CeO2 content. Additionally, an analysis for this phenomenon was also presented.     

Doping Effects of Rare Earth on Dielectric Properties of Fine－Grained BaTiO3－Based Ceramics

The doping effects of rare earth oxides Ho2O3 and Er2O3 on dielectric properties of BaTiO3-based ceramics were studied. After adding rare earth elements, grain growth in this system was inhibited and the grain size was reduced evidently which realized the fine-grained effect. In this system, the trivalent oxides Ho2O3 and Er2O3 were added to BaTiO3 ceramics. The rare earth oxides do not enter into inner lattice totally to replace A or B sites.Some of additives can improve dielectric strength by forming nonferroelectric phases, and the rest maintained at grain boundaries controls overgrowth of grains. The dielectric constant at room temperature is increased up to 3000 and the curve of TCC becomes flat.Meanwhile, the dielectric strength Eb becomes higher.     

Effect of Y2O3, CeO2 on Sintering Properties of Si3N4 Ceramics

The effect of rare earth oxides Y203 or Ce02 on sintering properties of Si3N4 ceramics was studied and the mechanism of assisting action during sintering was analyzed. The results in dicate that the best sintering properties appear in Si3N4 ceramics with 5% Y203 or 8% CeO2. Secondary crystallites are formed at grain boundaries after heat treatment,which decreases the amount of glass phase and contributes to the improvement of high-temperature mechanical properties of silicon nitride.     

Effects of MgO on Properties of La2O3-TiO2 Ceramics

The influence of MgO on sintering and dielectric properties of La2O3-TiO2 ceramics was investigated, and the mechanism also discussed. The results show that La2O3-TiO2 ceramics with MgO can be sintered between 1200 and 1280 ℃. With the increasing of the MgO, the dielectric constant of the material decreases, but the temperature coefficient of dielectric constant increases. Between 1 and 40 MHz,     

Effect of Yb203 Additive on Transformation Behavior of Anatase for TiO2/（ O＇ ＋ β＇ ）-Sialon Multi phase Ceramics

TiO2/（O＇ ＋ β＇）-Sialon multiphase ceramics were prepared with nano TiO2 （anatase） powder and （O＇ ＋ β＇）-Sialon powder as raw materials. Effect of Yb2O3 additive on transformation behavior of anatase for TiO2/（O＇ ＋ β＇）-Sialon multi phase ceramic was investigated and its influence mechanism was discussed. XRD was employed for the analysis of phase composition and lattice parameters. The results show that even though Yb2O3 has no obvious influence on starting temperature of phase transformation, it significantly accelerates the transformation process, which displays a weakened effect with more Yb2O3 addition. There exist two forms of the added Yb2O3 ： some enters TiO2 lattice and the other deposits on the surface of TiO2. The function of Yb2O3 on phase transformation of anatase can be attributed to the coaction of active and negative influence mechanisms as follows： some Yb^n＋ enter TiO2 lattice and replace Ti^4＋ , as well as the redox reaction between Yb^3＋ and TiO2, which promote the transformation, whereas other Yb2O3 deposits on the surface of TiO2, and Ti- O-Yb bond is formed by the coaction of Yb^3＋ and TiO2, which inhibit the process.     

Influence of Composition on Properties of Medium Temperature Sintering （Ba, Sr）TiO3 Series Capacitor Ceramics

The influence of the composition (Yb2O3, MgO, CeO2, Li2CO3) on the dielectric properties of medium temperature sintering (Ba,Sr)TiO3(BST) series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor′s levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant (ε) and for minimum dielectric loss (tanδ) was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m-1, capacitance temperature changing rate (ΔC/C) -75.67%, and suited for Y5V character. The mechanism of the influence of various components on the dielectric properties of medium temperature sintering BST ceramics was studied, thus providing the basis for preparation of multilayer capacitor ceramics and single-chip capacitor ceramics.     

Effect of Additive on Microstructure of Transparent YAG Ceramics

Crystallineyttriumaluminumgarnet (Y3 Al5O12 )isanimportantlasermaterialduetoitssuperioropti calandmechanicalproperties[1,2 ] .NeodymiumdopedYAGisusedwidelyaslaserhostmaterialinvarioussolidstatelasers .SingleYAGcrystalsaregenerallysynthesizedbyCzochralskim…     

Microstructure and Electrical Properties of Er_2O_3-Doped ZnO-Based Varistor Ceramics Prepared by High-Energy Ball Milling

Zinc oxide (ZnO) varistors exhibit highly nonlin-ear voltage-current (V-I) properties and it is ex-pressed bythe relationI=KVα,whereKis a constantandαis a nonlinear coefficient .They are extensivelyused as surge arresters in electric power lines ,such a…     

Effects of La^3＋ Non-Uniformly Doping in TiO2 Films on Photocatalytic Activities

TiO2 thin films non-uniformly doped by La^3＋ were prepared by sol-gel method. The comparison of thin film activities, which was characterized by photocatalytic degradation of methyl orange, shows that doping modes have great activities. The non-uniformly effects on photocatalytic doped TiO2 films resuh in good photocatalytic activities with an optimal concentration; about 0. 5% （ atom fraction ）. UV-Vis transmittance spectra indicate that the absorption edges of these TiO2 thin films shift to ward longer wave- lengths remarkably, and electrochemical behavior also reveales that e^- -h^＋ pairs are prone to formation and separation under UV irradiation. The mechanism of photocatalytic activities are enhanced by La^3＋ non-uniformly doping was discussed on the analogy of the theory of “window effect” of solar cell heterojunction.     

Dielectric Properties of CeO2 -Doped Ba( Zr, Ti)O3 Ceramics

The influence of additive amount of CeO2 on the properties of Ba(Ti, Zr)O3 (BTZ) capacitor ceramics prepared using conventional solid-state reaction method was investigated. The dielectric constant(ε) increases to a maximum when w( CeO2 ) is about 1.0% and then decreases again at higher doping concentration of CeO2. The dielectric constant gets a maximum while w ( CeO2 ) is about 1. 0%, and the dielectric loss is minimum while w ( CeO2 ) is0.5 %. CeO2 can decrease the curie temperature, widen the εr-T peak and decrease the absolute value of dielectric constant temperature coefficient. The influence mechanism of CeO2 additive on the properties of the BTZ ceramics was discussed. The results show that CeO2 additive influences the properties of BTZ ceramics by means of forming defect solid solution , shifting curie temperature peak effect, segregating in crystal boundary , and impeding grain growth.     

Microstructure and Electrical Properties of Er2O3-Doped ZnO-Based Varistor Ceramics Prepared by High-Energy Ball Milling

The microstructure, electrical properties and density of ZnO-based varistor ceramics with different Er2O3 content prepared by high-energy ball milling （HEBM） and sintered at 800℃ were investigated. With increasing Er2O3 content, the ZnO grain size decreases due to the Er-rich phases inhibiting grain growth ; and nonlinear coefficient （ α ） decreases because of the decrease of barrier height （φB） The breakdown voltage （Eb） and density increase, whereas leakage current （IL） decreases with increasing Er2O3 content. The barrier height （φB）, donor concentration （Nd）, density of interface states （Ns） decrease and barrier width （ω） increases with increasing Er2O3 content due to acceptor effect of Er2O3 in varistor ceramics.     

Dielectric Properties of Dy2O3 -Doped ( Ba, Sr) TiO3 Ceramics

The effects of Dy2O3 doping on the dielectric properties of (Ba, Sr)TiO3 series capacitor ceramics prepared using solid-state reaction method were studied. With the increasing of Dy2O3 additive , the dielectric constant (ε) of materials increases to a maximum when w(Dy2O3 ) is about 0.5% ,while the dielectric loss(tanδ) decreases. The BST ceramics with highε ( = 5245 ), low tanδ ( = 0. 0026 ) and high DC breakdown voltage ( = 5.5 mV ·m-1 ) were obtained. The influencing mechanism of Dy2O3 on the dielectric properties of (Ba, Sr)TiO3 ceramics was studied, thus providing the basis for preparation of capacitor ceramics.     

Effects of Doping CeO2, Er2O3 on Properties of TiO2-SiO2 Ceramics for Catalyst Supporter of deNOx

Effects of doping CeO2 and Er2O3 on the mechanical strength, thermal expansion coefficient, sintering temperature of TiO2-SiO2 ceramics were investigated. The experimental results and the microscopic analysis of SEM, XRD, TG-DSC, FT-IR and TEM show that adding CeO2 and Er2O3 into TiO2-SiO2 ceramics can prohibit the growth of its crystal grains, make their size uniform and form them into a dense structure, which finally enhance its mechanical behaviors, and the lower thermal expansion coefficient that leads to an excellent property of thermal shock resistance. After the reforming TiO2-SiO2 ceramics doped by CeO2 was sintered at 1380 ℃, the bending strength reached to 83 MPa, and the thermal expansion coefficient was 9.8×10-6/℃ within the temperature range of 25～800 ℃, which provides a promising basis of making equipped honeycomb catalyst of deNOx.     

Controllable preparation of CeO2 nanostructure materials and their catalytic activity

Well-crystalline CeO2 nanostructures with the morphology of nanorods and nanocubes were synthesized by a template-free hydro-thermal method. X-ray diffraction (XRD), transmission electron microscopy (TEM), Brunauer-Emmett-Teller (BET) nitrogen adsorp-tion-desorption measurements were employed to characterize the synthesized materials. The reducibility and catalytic activity of nanostruc-tured CeO2 were examined by hydrogen temperature-programmed reduction (H2-TPR) and CO oxidation. The results showed that CeO2 nanorods could be converted into CeO2 nanocubes with the increasing of the reaction time and the hydrothermal temperature, CeO2 nanorods became longer gradually with the increasing of the concentrations of NaOH. H2-TPR characterization demonstrated that the intense low-temperature reduction peak in the CeO2 nanorods indicated the amount of hydrogen consumed is larger than CeO2 nanocubes. Meantime the CeO2 nanorods enhanced catalytic activity for CO oxidation, the total conversion temperature was 340 oC. The reasons were that CeO2 nanorods have much smaller crystalline sizes and higher surface areas than CeO2 nanocubes.     

Effects of Rare-Earth La2O3 Addition on Microstructures and Electrical Properties of SrTiO3 Varistor-Capacitor Dual Functional Ceramics

Generally, metal oxide varistors used for the pro tection of electrical circuits are based on ZnO andTiO2[1,2]. ZnO varistor, which is widely used due toits high non linearity coefficient, is composed of ZnOceramics with minor oxide additive…     

掺杂氧化铈钡钨阴极的结构和发射性能的研究

采用CeO2与钨粉机械混合,制备了满足大功率微波器件要求的高性能掺杂CeO2钡钨阴极,利用扫描电镜、压汞仪等测试手段分析了阴极的微观结构.用水冷阳极二极管检测了阴极的发射性能.研究表明,掺杂CeO2钡钨阴极孔径分布较窄,为0.4～3.6um,平均孔径为2um.在阳极正常工作温度1050。C下,掺杂CeO2钡钨阴极的直流发射电流密度和脉冲发射电流密度分别为6.33,17.48A·cm-2,明显优于传统钡钨阴极,满足大功率微波器件要求.     

Study on Mg PSZ Ceramics Doped with Y_2O_3 and CeO_2

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