X-ray photoemission spectroscopy of nitrogen-doped UNCD/a-C:H films prepared by pulsed laser deposition

Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) films were deposited by pulsed laser deposition (PLD). Nitrogen contents in the films were controlled by varying a ratio in the inflow amount between nitrogen and hydrogen gases. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18 Ω^? 1 cm^? 1 at 300 K. X-ray photoemission spectra, which were measured using synchrotron radiation, were decomposed into four component spectra due to sp², sp³ hybridized carbons, C=N and C–N. A full-width at half-maximum of the sp³ peak was 0.91 eV. This small value is specific to UNCD/a-C:H films. The sp²/(sp³ + sp²) value was enhanced from 32 to 40% with an increase in the nitrogen content from 0 to 7.9 at.%. This increment probably originates from the nitrogen incorporation into an a-C:H matrix and grain boundaries of UNCD crystallites. Since an electrical conductivity of a-C:H does not dramatically enhance for this doping amount according to previous reports, we believe that the electrical conductivity enhancement is predominantly due to the nitrogen incorporation into grain boundaries.     

Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modifications

The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is, the turn-on field decreased from 23.2 V/μm to 12.5 V/μm and the electron field emission current density increased from 10E−5 mA/cm² to 1 × 10E−2 mA/cm². The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp³-bonded carbons into sp²-bonded ones) in UNCD films.     

Effect of ion bombardment and hydrogen pressure during deposition on the optical properties of hydrogenated amorphous carbon thin films

Carbon-based thin films are ideal materials for several state-of-the-art applications, such as protective materials and as active films for organic electronics, medical, optoelectronic devices. In this work, we study in detail the effect of the ion-bombardment and the hydrogen partial pressure during deposition on the optical properties of hydrogenated amorphous carbon (a-C:H) thin films grown onto c-Si substrates by rf magnetron sputtering. The optical properties of the a-C:H films were investigated by phase modulated Spectroscopic Ellipsometry in a wide spectral region from the NIR to the Vis-far UV (0.7-6.5 eV). A dispersion model based on two Tauc-Lorentz oscillators, has been applied for the analysis of the measured < ε(ω)> of the a-C:H films to describe the π-π* and σ-σ* interband electronic transitions, that can describe accurately the optical properties of all amorphous carbons. The applied V_b influences the bombardment of the growing thin films with Ar ions affecting the content of sp² and sp³ hybridized carbon bonds in the films. As it was found, the increase of the applied negative voltage reduces the optical transparency of the a-C:H films. Also, the H incorporation has been found to change only the energy position of the σ-σ* transitions. Finally, from the study of the refractive index n(ω = 0 eV) it has been found that the increase of the ion bombardment during the films deposition is correlated to an increase in the films density.     

Interaction of H (D) atoms with surfaces of glassy carbon: adsorption, abstraction, and etching

The interaction of thermal (2000 K) H and D atoms with glassy carbon (GC) surfaces was investigated in ultrahigh vacuum environment using thermal desorption and reaction kinetics mass spectroscopy. Virgin GC surfaces (not previously subjected to stationary etching by H atoms) exhibit a remarkably low reactivity with respect to adsorption of D. The saturation coverage of D on GC is about a factor of ten smaller than on (0 0 0 1) graphite surfaces (HOPG or natural single crystal). Thermal desorption spectra indicate that D atoms on virgin GC surfaces are adsorbed on distorted graphite basal planes, i.e. the recombinative desorption features of D on GC between 400 and 600 K are broadened as compared to those measured on graphite. Upon heating of D-covered virgin GC surfaces, CD₃ surface groups desorb between 500 and 1000 K. Stationary etching of GC by a flux of H atoms is most efficient around 600 K, as was previously observed on other carbon materials, a-C:H thin films and graphite, and as expected from the etching mechanism on C substrates. GC surfaces repeatedly etched by H exhibit an increasing density of C atoms located at edge sites which are capable to adsorb D via formation of spⁿ C-D bonds. D from these sites desorbs recombinatively around 830 K and competitive desorption of C₂ deuterocarbons at 780 K occurs. The graphite-like fraction of the surface is unaffected by etching. Abstraction of D on virgin GC by H exhibits the same phenomenology as on graphite: Eley-Rideal mechanism and large abstraction cross-section at small D coverages.     

Investigation of the initial growth of ultrananocrystalline diamond films by multiwavelength Raman spectroscopy

The initial growth phase of ultrananocrystalline diamond/amorphous carbon nanocomposite films (UNCD/a-C) has been investigated by scanning electron microscopy, atomic force microscopy and especially Raman spectroscopy. As due to resonance effects Raman spectra of carbon materials strongly depend on the excitation wavelength, a multiwavelength analysis has been performed with λ_exc ranging from the UV region (325 nm) over the visible range (488 and 514 nm) to the IR region (785 nm). In addition, a set of measurements has been performed with a confocal Raman microscope, i.e. depth resolved, with a wavelength of 532 nm. The samples investigated were deposited with constant parameters, the deposition time being the only parameter varied, resulting in film thicknesses from 100 to 500 nm. It turned out that the diamond fraction and also the grain boundary material do not vary during that stage whereas there are slight but distinct changes of the nature of the amorphous matrix which reflect, among others, in a shift of the graphite-related G band to higher wavenumbers and in an increase of the ratio of D and G bands with increasing film thickness. These changes are discussed in terms of the above mentioned resonance effects; the major changes are a transition of hydrogen containing sp² chains to hydrogen-free condensed sp² rings when the material is no longer in the surface region of the films but becomes incorporated within the film bulk.     

X-ray photoemission spectroscopic study of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition

Chemical bonding configurations of ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films prepared by pulsed laser ablation of graphite were investigated by X-ray photoemission spectroscopy using synchrotron radiation. The spectra were decomposed using a Voigt function after the backgrounds were subtracted by Shirley's method. A narrow full-width half-maximum of the sp³ peak is specific, which might be attributed to existence of a large number of UNCD crystallites in the film. The width was immediately broadened by an argon ion bombardment. Its value became equivalent to that of the a-C:H film after the ion bombardment in the same manner. This implies that UNCD crystallites were easily damaged and destroyed by the ion bombardment.     

Electrochemical impedance spectroscopy of oxidized and hydrogen-terminated nitrogen-induced conductive ultrananocrystalline diamond

We have studied the electrochemical impedance spectroscopy of conductive ultrananocrystalline diamond (UNCD) modified by either oxidation or hydrogenation surface treatments. The impedance was measured in the frequency range from 0.1 Hz to 40 kHz at different DC voltages and the results fitted to an equivalent electrical circuit. Despite the complexity of the conductive UNCD surface, composed of sp³-bonded grains and grain boundaries with a high content of sp²-bonded carbon atoms, a Randles circuit with a constant phase element (CPE) for the capacitive element provided a reasonable model for both terminations. However, the parameters of the CPE were very different for each termination. Taking into account the results obtained, we propose that the interfacial impedance of oxidized UNCD is dominated by the oxidized sp²-bonded carbon atoms present at the grain boundaries, and the interfacial impedance of hydrogen-terminated UNCD is governed by both the grain boundaries and the grains.     

Synthesis, characterization and ring-opening polymerization of a novel six-membered cyclic carbonate bearing pendent allyl ether group

A novel six-membered cyclic carbonate with pendent allyl ether group, 5-allyloxy-1,3-dioxan-2-one (ATMC), was synthesized from glycerol, and the corresponding polycarbonate, poly(5-allyloxy-1,3-dioxan-2-one) (PATMC) was further synthesized by ring-opening polymerization in bulk at 120 °C. Two kinds of catalyst, tin(II) 2-ethylhexanoate (Sn(Oct)₂) and immobilized porcine pancreas lipase on silica particles (IPPL), were employed to perform the polymerization. The structures of the novel monomer and the resulting functional polymers were confirmed by FTIR, ¹H NMR, ¹³C NMR, GPC and DSC. The molecular weight (M_n) of PATMC decreased rapidly with the increase of IPPL or Sn(Oct)₂ concentration. The highest molecular weight (M_n = 48,700 g/mol) of PATMC with the polydispersity of 1.31 was obtained at 0.1 wt% concentration of IPPL for 48 h. Postpolymerization oxidation reactions to epoxidize the unsaturated bonds of the PATMC were also achieved. The epoxide-containing polymers could afford facilities for further modification.     

Local structural analysis of a-SiCx:H films formed by decomposition of tetramethylsilane in microwave discharge flow of Ar

Hydrogenated amorphous silicon carbide (a-SiC_x:H) films were prepared by the decomposition of tetramethylsilane (TMS) with microwave discharge flow of Ar. When radio-frequency (RF) bias voltage (− V_RF) was applied to the substrate, the film hardness increased as (2.39 ± 1.12)-(9.15 ± 0.55) GPa for − V_RF = 0-100 V. The a-SiC_x:H films prepared under various − V_RF conditions were analyzed by the carbon-K near edge X-ray absorption fine structure (NEXAFS), by the elastic recoil detection analysis (ERDA), and by the X-ray photoelectron spectroscopy (XPS). From a quantitative analysis of NEXAFS, the sp²/(sp²+ sp³) ratios of C atoms were evaluated as 67.9 ± 2.0, 55.4 ± 2.7, and 51.7 ± 0.7% for − V_RF = 0, 60, and 100 V, respectively. From ERDA, hydrogen content of the film prepared under the condition of − V_RF = 100 V was found to decrease 28% comparing with that under − V_RF = 0 V. It is suggested that the cause of the increase of the film hardness when applying − V_RF is predominantly the growth of the sp³-hybridized structure of C atoms accompanied by the decrease of hydrogen terminations.     

Correlation between film structures and potential limits for hydrogen and oxygen evolutions at a-C:N film electrochemical electrodes

A correlation between film structures and the width of the potential windows defined by the dihydrogen and dioxygen evolutions in aqueous media at nitrogen-doped amorphous carbon thin film electrodes prepared using a filtered cathodic vacuum arc system is reported. A range of film structures were obtained by changing the nitrogen mass flow rate during deposition, and the film structures were determined using electron energy-loss spectroscopy. For the film electrodes, the width of the potential windows in 0.1 M NaOH and in 0.1 M H₂SO₄ at a current density of 100 μA/cm² exceed those for glassy carbon electrodes, and increase with an increase in the sp³ C fraction in the a-C:N materials. A film electrode with a rich sp² C content, has a lower electrical resistance, but still possesses a relatively large potential window. These features combined allow the materials to be tailored for particular electroanalysis.     

Optical properties and new carbon forms of sputtered amorphous carbon films

Amorphous carbon films were deposited by r.f. magnetron sputtering at various bias voltages V_b applied on Si substrate. We studied the optical properties of the films using in situ spectroscopic ellipsometry (SE) measurements in the energy region 1.5–5.5 eV. From the SE data analysis the dielectric function ε(ω) of the a-C films was obtained, providing information about the electronic structure and the bonding configuration of a-C films. Based on the SE data the films are classified in three categories. In Category I and II belong the films developed with V_b≥0 V (rich in sp² bonds) and −100≤V_b<0 V (rich in sp³ bonds), respectively. The dielectric function of the films belonging in these two categories can be described with two Lorentz oscillators located in the energy range 2.5–5 eV (π–π^*) and 9–12 eV (σ–σ^*). A correlation was found between the oscillator strength and the sp² and sp³ contents. The latter were calculated by analyzing the ε(ω) with the Bruggeman effective medium theory. In films deposited with V_b<−100 V (Category III), the formation of a new and dense carbon phase was detected which exhibits a semi-metallic optical behavior and the ε(ω) can be described with two oscillators located at ∼1.2 and ∼5.5 eV.     

Internal stress of a-C:H(N) films deposited by radio frequency plasma enhanced chemical vapor deposition

Amorphous hydrogenated carbon nitride [a-C:H(N)] films were deposited from the mixture of C₂H₂ and N₂ using the radio frequency plasma enhanced chemical vapor deposition technique. The films were characterized by X-ray photon spectroscopy, infrared, and positron annihilation spectroscopy. The internal stress was measured by substrate bending method. Up to 9.09 at% N was incorporated in the films as the N₂ content in the feed gas was increased from 0 to 75%. N atoms are chemically bonded to C as C–N, CN and CN bond. Positron annihilation spectra shows that density of voids increases with the incorporation of nitrogen in the films. With rising nitrogen content the internal stress in the a-C:H(N) films decrease monotonically, and the rate of decrease in internal stress increase rapidly. The reduction of the average coordination number and the relax of films structure due to the decrease of H content and sp³/sp² ratio in the films, the incorporation of nitrogen atoms, and the increases of void density in a-C:H(N) films are the main factors that induce the reduction of internal stress.     

Growth,electronic properties and applications of nanodiamond

Nanodiamond or nanocrystalline diamond is a broad term used to describe a plethora of materials. It is generally accepted that nanocrystalline diamond (NCD) consists of facets less than 100 nm in size, whereas a second term “ultrananocrystalline diamond” (UNCD) has been coined to describe material with grain sizes less than 10 nm. These differences in morphology originate in the growth process. Conventional hydrogen rich gas phases produce facetted diamond with grain size proportional to film thickness and low sp² content. If these films are thin the grains can be less than 100 nm and hence NCD. By starving the plasma of hydrogen, the reduction in etching of sp² can lead to re-nucleation. At the extreme this results in very small grain sizes of around 3–5 nm, UNCD.The electronic properties of these two materials are vastly different. NCD is basically very thin microcrystalline diamond and thus can be doped with boron. It is intrinsically transparent, with absorption increasing with doping level. UNCD is highly absorbing due to its higher sp² content, and exhibits a reduced bandgap due to disorder. By adding nitrogen to the gas phase, the density of states within the bandgap increases and ultimately metallic conductivity can be achieved. This conductivity is n-type but not doping.     

Molecular dynamics simulation of shear-induced graphitization of amorphous carbon films

The shear-induced graphitization of amorphous carbon (a-C) films in sliding contact with a diamond counterface is investigated by molecular dynamics (MD) simulations. The gradual formation of a graphene-like sp² dominant layer on the a-C film surface is observed after steady-state sliding has been achieved, which provides direct evidence for the experimental observations of friction induced graphitization of a-C film. After the graphitized layer is formed, the relative sliding occurs between the graphitized atomic layers. During the shearing process, the biaxial stress in the graphitized layer experiences a transition from highly compressive (42 GPa) to tensile (−3 GPa). It is the relaxation of the local biaxial stress that leads to the sp³-to-sp² structural transformation.     

Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR–r.f. nitrogen plasma

Hydrogenated amorphous carbon (a-C:H) films deposited from CH₄ in a dual electron cyclotron resonance (ECR)–r.f. plasma were treated in N₂ plasma at different r.f. substrate bias voltages after deposition. The etching process of a-C:H films in N₂ plasma was observed by in situ kinetic ellipsometry, mass spectroscopy (MS), and optical emission spectroscopy (OES). Ex situ atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to characterize the etched film surface. XPS analysis proves that the nitrogen treatment on the a-C:H film, induced by r.f. substrate bias, causes a direct nitrogen incorporation in the film surface up to 15–17 at.% to a depth of about 20–40 Å depending on the r.f. bias. Various bonding states between carbon and nitrogen, such as tetrahedral sp³ C–N, and trigonal sp² C–N were confirmed by the deconvolution analysis of C 1s and N 1s core level spectra. The evolution of etching rate and the surface roughness in the film measured by AFM exhibit a clear dependence on the applied r.f. bias. MS and OES show the various neutral species in the N₂ plasma such as HCN, CN, and C₂N₂, which may be considered as the chemical etching products during the N₂ plasma treatment of a-C:H film.     

Semiconductor properties and redox responses at a-C:N thin film electrochemical electrodes

The semiconductor capacitances of the nitrogen-doped amorphous carbon (a-C:N) materials with different sp³/sp² C ratios were studied as a function of electrode potential in a-C:N/aqueous electrolyte systems. This dependence of capacitance on electrode potential in aqueous 0.1 M NaOH shows that the investigated a-C:N materials are intrinsic semiconductors. The space-charge layers inside the a-C:N electrodes behave similar to a Helmholtz layer because of the presence of surface states when the electrolytes contain O₂ or anions other than OH⁻. The lower density and mobility of carriers of materials with a higher sp³ C fraction within the a-C:N material causes a suppression of redox reactions, and the lower density of carriers contributes to a lower capacitance.     

Infra-red spectrum of the tight (110) fold in n-C198H398

The alkane n-C₁₉₈H₃₉₈ has been crystallised in both extended chain and once-folded forms and annealed to produce materials with low concentrations of gauche bonds. The concentrations of the specific conformers detected by FTIR spectroscopy at −173 °C are calculated, using measurements on liquid n-hexadecane for calibration: values are all generally less than 2.0 per 100 carbon atoms, with extended chain samples showing values less than 1.0 per 100 carbon atoms. A subtraction spectrum (Once-folded chain sample minus Extended chain sample) shows positive bands at 1298, 1340, 1347 and 1369 cm⁻¹, which are predicted in earlier calculations for a (110) fold, while additional positive bands at 1353 and 1363 cm⁻¹ are assigned, respectively, to gg conformers and (tentatively) to strained gtg or gtg′ conformations.     

Enhanced cycling stability of Ni-MH battery by depositing amorphous carbon film on the Ti1.4V0.6Ni negative electrode

Amorphous carbon (a-C) films with various thicknesses depending on the reaction time are deposited on the surface of Ti_1.4V_0.6Ni alloy electrodes for Ni-MH (nickel-metal hydride) battery by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). With the increasing deposition time, the Raman spectra show a gradually disordered sp²-bonding change of the films and the changing trend of sp²/sp³ is obtained by X-ray photoelectron spectroscopy. The a-C film of depositing for 30 min with the thickness of 400 nm shows a favorable stability in alkaline electrolyte, the capacity is enhanced by 36.2% after 50 cycles than the bare electrode, and the charge voltage is 80 mV lower than the bare one. The a-C film with high sp²-bonded carbon content effectively reduces the charge transfer resistance, and as a coating layer, the dissolution of V of the alloy is also inhibited. In particular, to get a proper discharge voltage and a stable capacity simultaneously, covering completely and an appropriate thickness of the a-C film are crucial for an expected performance.     

Structural analysis of a-C:H and a-C:H:Si films under high-pressure and high-temperature by synchrotron X-ray diffraction

Amorphous carbon films have several outstanding tribology characteristics, including high hardness, surface smoothness, and low friction. Under tribological conditions, their surface is generally exposed to high-temperature and pressure. Although the structure of amorphous carbon films is likely changed by high temperature and pressure, there have been no reports on such structural changes of the films. To obtain information about their structural changes, synchrotron X-ray diffraction was used to analyze two kinds of amorphous carbon films, a-C:H and a-C:H:Si, under high-temperature and high-hydrostatic pressure conditions. Synchrotron X-ray diffraction was applied to films pressurized by a multi-anvil press installed in the PF-AR NE5C beamline at KEK at room temperature and at a high-temperature around 200 °C. The pair distribution functions derived by Fourier transformation of the obtained scattering intensity profiles showed that the sp²/sp³ ratios for both films decreased as the pressure increased and that the sp²/sp³ ratio for the a-C:H film increased as the temperature increased. This indicates that high-pressure creates sp³ stabilization in a-C:H and a-C:H:Si films while high-temperature creates sp² transition in a-C:H film. The sp²/sp³ ratio for the a-C:H:Si film did not change much even at high-temperature due to the high thermal-oxidative stability of a-C:H:Si.     

Thermal stability in oxidative and protective environments of a-C:H cap layer on a functional gradient coating

Three types of hydrogenated amorphous carbon (a-C:H) coatings were synthesized on stainless steel substrates by a Plasma Assisted CVD process, containing hydrogen contents in the range from 25 to 29 at.%. The effect of annealing up to 600 °C in two different environments on both the structure and the mechanical properties of the coatings were investigated by means of Differential Scanning Calorimetry/Thermogravimetry (DCS/TG), Raman Spectroscopy and Depth Sensing Indentation. The results indicate that the structural modifications occurred in the coatings in both protective and oxidative atmospheres up to 400 °C were due to a complex atomic rearrangement involving the dehydrogenation reaction. A small weight loss, detected by isothermal TG analysis confirmed the H₂ effusion. This dense effect proceeds without a change of hardness which was maintained in the diamond-like regime. The annealing in non-oxidative ambiance at temperatures above 500 °C causes both gaseous products effusion and sp³ to sp² transformation. Raman parameters and hardness values were, under these conditions, similar to those known for a typical graphite-like regime. While the onset temperature of the graphitization process was found to be almost independent of the H content range investigated, the situation was completely different in relation to the oxidation reaction. The highest oxidation resistance was found for coatings with the lowest H content.