总剂量辐射下的NMOS/SOI器件背栅阈值电压漂移模型

SOI(绝缘体上硅)器件在总剂量辐照下的主要性能退化是由于SOI器件的背栅阈值电压漂移引起的背沟道漏电。本文首先采用二维有限元方法,对辐射在SOI器件的埋氧层中的感生氧化物电荷进行模拟,然后分析此氧化物电荷对器件的外部电学特性的影响,建立了器件在最劣偏置下辐射引起的背栅MOSFET的阈值电压漂移模型,提取背栅MOSFET受辐射影响参数,以用于在SOI电路设计中准确的评估辐射对SOI电路的影响。模拟数据和试验数据具有很好的一致性。     

注氮、注氟SIMOX/NMOS器件辐射加固性能

本文对注N、注F的SIMOX/NMOSFET器件的抗辐射特性进行了研究,发现两者都能减少埋氧层及其界面的空穴陷阱,对辐射加固有所改善,特别是对大剂量辐射的加固更为明显.总体来说,在此能量下,离子注入剂量越大,加固越好.由于注入的剂量对片子本身的阈值电压有很大影响,所以选择对于器件初始特性影响较小的剂量及能量非常重要.     

Pseudo-MOS晶体管和nMOS晶体管评估SOI材料抗总剂量辐射能力的比较

本文用辐射加固和未加固的SIMOX(注氧隔离)SOI(绝缘体上硅)材料制作了Pseudo-MOS晶体管和nMOS晶体管,并进行了X射线总剂量辐射实验。结果表明加固工艺能有效提高SIMOXSOI材料的抗总剂量辐射能力,同时也表明Pseudo-MOS晶体管能有效的替代nMOS晶体管对SOI材料的抗总剂量辐射能力进行评估。     

MOS器件及电路的总剂量辐射效应测试技术解析

辐射是指线同物质之间的相互作用,文章对各种模拟源辐射环境的测量方法进行了分析,介绍了测试MOS器件及电路的总剂量辐射效应的技术,围绕实验进行讨论。     

SOI NMOS晶体管在高剂量的X射线与60Coγ射线辐射作用下的背栅阈值电压漂移饱和效应的研究及比对

利用标准SIMOX材料制作了部分耗尽环型栅NMOS晶体管，并在ON偏置条件下分别对其进行了10keVX射线及^60Coγ射线总剂量辐照实验。实验结果表明，在两种辐射条件下NMOS晶体管的背栅阈值电压漂移量都会随着辐照剂量的升高而趋于饱和。实验分析并研究了这种现象的机理，并发现在较低的辐照剂量下^60Coγ射线造成的背栅阈值电压漂移量较大，但在高剂量条件下X射线造成的漂移量将超过^60Coγ射线。     

不同栅结构的部分耗尽NMOSFET/SIMOX的总剂量辐照效应研究

研究了在改性注氧隔离(SIMOX)材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应.实验表明在10keV的X-射线总剂量辐照下,器件的背栅、正栅阈值电压负向漂移和漏电流都控制在较小的水平;在2Mrad(SiO2)的辐照下仍能正常工作.研究证实了无论哪种栅结构,对于背栅,PG均为最劣偏置,其次是OFF偏置,而ON偏置下器件受辐照的影响最小;而对于正栅,ON均为最劣偏置.通过拟合计算出了绝缘埋层(BOX,即埋氧)中的饱和净正电荷密度Not和空穴俘获分数α.     

部分耗尽环栅CMOS/SOI总剂量辐射效应研究

采用硅离子注入工艺对注氧隔离(SIMOX)材料进行改性,在改性材料和标准SIMOX材料上制作了部分耗尽环型栅CMOS/SOI反相器,并对其进行60Co γ射线总剂量辐照试验.结果表明,受到同样总剂量辐射后,改性材料制作的反相器与标准SIMOX材料制作的反相器相比,转换电压漂移小的多,亚阈漏电也得到明显改善,具有较高的抗总剂量辐射水平.     

PNIPA/PEG多孔智能水凝胶的辐射合成与性能研究

采用辐射法合成了一系列具有合适相变温度和快速响应性能的PNIPA/PEG多孔智能水凝胶,用红外光谱分析了水凝胶的结构,并测定了水凝胶的溶胀动力学、平衡溶胀率和退溶胀动力学,研究了辐射剂量和成孔剂分子量对凝胶性能的影响.结果表明,PEG分子仅在聚合交联过程中充当成孔剂,不参与反应,反应后被除去;PNIPA/PEG水凝胶的平衡溶胀率(SR)随辐射剂量的升高而减小,其最低临界相转变温度(LCST)在37℃左右,且基本不受辐射剂量的影响;溶胀性能随着PEG分子量的增大而提高.     

硅橡胶共辐射接枝甲基丙烯酸甲酯的研究

利用60Coγ射线共辐射接枝方法,研究了硅橡胶与甲基丙烯酸甲酯(MMA)接枝共聚反应.讨论了单体浓度、辐射剂量、剂量率和溶剂等因素对接枝率的影响,并用红外光谱(FT-IR)、差示扫描量热仪(DSC)和接触角测定仪对接枝共聚物的结构和性能进行了表征分析.结果表明:辐射剂量和单体浓度对接枝率影响较大,其用量分别为20kGy和m(MMA)/m(SR)=0.6时,接枝效果较好;接枝后硅橡胶的热性能和亲水性得到明显改善.     

多壁碳纳米管的γ辐射修饰

采用60Co-γ射线对多壁碳纳米管进行了辐射修饰.红外光谱分析(FTIR)表明,水中辐射没有在碳纳米管表面接枝上羧基;酸中辐射和干态辐射后用混酸处理都可以使碳纳米管接枝上羧基,但酸中辐射后的碳纳米管接枝上的羧基更多.拉曼光谱分析(Raman)表明,酸中辐射使碳纳米管的IG/ID值降低,使碳纳米管的石墨化程度降低,结构变得不完善.且辐射剂量越大,石墨化程度降低得越厉害,结构越不完善.热重分析(TGA)表明,原始碳纳米管是一步分解,酸中辐射修饰后的碳纳米管是两步分解.且辐射剂量越大,碳纳米管的起始热分解温度越低.     

Method for evaluating the parameters of radiation defects and predicting the radiation resistance of MOS transistors

A new approach to analysis of the radiation resistance of MOS transistors is proposed, which takes into account both the accumulation of a radiation-induced charge on the surface states and in the volume of oxide and the relaxation processes involving thermal and tunneling leakage of the accumulated charge. The prediction of radiation stability is based upon the knowledge of parameters of the radiation-induced defects, which are determined from the experimental dose dependences established at high dose rates and from the temperature dependences and kinetics of relaxation of the threshold voltage. Once these parameters are determined, the behavior of a MOS transistor under the action of radiation of an arbitrary (including low) intensity can be predicted.     

Analysis of threshold voltage shift of pentacene field effect transistor with ferroelectric gate insulator as a Maxwell-Wagner effect

The current-voltage (I-V) characteristics of pentacene filed effect transistor (FET) with ferroelectric gate insulator (P(VDF-TeFE)) is investigated to analyze the threshold voltage shift in terms of Maxwell-Wagner (MW) effect. The spontaneous polarization generated in ferroelectric gate insulator modulates the amount of accumulated charges which is injected from the source electrode, and causes threshold voltage shift. Two peaks observed in the I-V characteristics were analyzed based on a MW effect element. Results reveal that the movement of accumulated charges at the pentacene/P(VDF-TeFE) interface along the electric field in the FET, and the ferroelectric polarization of P(VDF-TeFE) are main origins of the peaks.     

Development of a pMOSFET sensor with a Gd converter for low energy neutron dosimetry

A pMOSFET having a 10 microm thick Gadolinium (Gd) layer has been invented as a slow neutron sensor. When slow neutrons are incident to the Gd layer, conversion electrons, which generate electron-hole pairs in the SiO2 layer of the pMOSFET, are generated by a neutron capture process. The holes are easily trapped in the oxide and act as positive-charge centres in the oxide. Due to the induced charges, the threshold turn-on voltage of the pMOSFET is changed. The developed sensors were tested at a neutron beam port of the HANARO research reactor and a 60Co irradiation facility to investigate slow neutron response and gamma ray contamination, respectively. The resultant voltage change was proportional to the accumulated neutron dose and it was very sensitive to slow neutrons. Moreover, ionising radiation contamination was negligible. It can also be used in a mixed radiation field by subtracting the voltage change of a pMOSFET without Gd from that of the Gd-pMOSFET.     

Towards an optimum design of a P-MOS radiation detector for use in high-energy medical photon beams and neutron facilities: analysis of activation materials

The behaviour of packaged and unpackaged ESAPMOS4 RadFET radiation detectors (NMRC Cork, Ireland) was investigated when used in the mixed photon and neutron environment of a medical linear accelerator operating above the nucleon separation energy and in a 14 MeV neutron field provided by a D-T generator. Within the uncertainty of the experimental set-up (4% at 95% confidence level) the unpackaged device was found to have essentially zero activation dose-burden whereas the packaged device exhibits a considerable degree of post irradiation absorbed dose due to deactivation radiation.     

Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

Carbon nanotube (CNT) field-effect transistors (FETs) have been considered ideal building blocks for radiation-hard integrated circuits (ICs), the demand for which is exponentially growing, especially in outer space exploration and the nuclear industry. Many studies on the radiation tolerance of CNT-based electronics have focused on the total ionizing dose (TID) effect, while few works have considered the single event effects (SEEs) and displacement damage (DD) effect, which are more difficult to measure but may be more important in practical applications. Measurements of the SEEs and DD effect of CNT FETs and ICs are first executed and then presented a comprehensive radiation effect analysis of CNT electronics. The CNT ICs without special irradiation reinforcement technology exhibit a comprehensive radiation tolerance, including a 1 × 10⁴ MeVcm² mg⁻¹ level of the laser-equivalent threshold linear energy transfer (LET) for SEEs, 2.8 × 10¹³ MeV g⁻¹ for DD and 2 Mrad (Si) for TID, which are at least four times higher than those in conventional radiation-hardened ICs. The ultrahigh intrinsic comprehensive radiation tolerance will promote the applications of CNT ICs in high-energy solar and cosmic radiation environments.     

Voltage induced anomalous conductance switching behaviour in nematic liquid crystal-multiwalled carbon nanotube composite

Investigations on the voltage induced conductance switching behavior in the nematic liquid crystal-multiwalled carbon nanotube composite have performed. We have found that, the system formed electrical conduction pathways with increasing voltages. Anomalous conductance switching took place at a certain threshold voltage. Percolation threshold voltage depends on the frequencies of the measuring electric field. We have made an analogy between concentration dependent percolation and voltage induced percolation. A two dimensional (2D) renormalization model calculation reveals that if the CNTs form a 2D network then percolation threshold concentration (p(c)) should be 0.768. After careful analysis we have found that voltage analogy of percolation threshold concentration in our system is also very close to the above value. The connectivity exponent (beta) for 2D site percolation agrees well with our proposed voltage induced percolation connectivity exponent. Which gives a glimpse that voltage induced percolating network may forms a two dimensional network in this particular system.     

Experimental study of single-electron phenomena in silicon nanocrystal memories

In this paper we present experimental evidence for single-electron phenomena in solid-state memories based on silicon nanocrystals as storage elements. The stepwise evolution of the channel current of a written memory cell biased in the subthreshold regime is monitored by means of a purposely designed low noise acquisition system with a bandwidth of 1 kHz. Each channel current step-up is ascribed to a single-electron emission from the silicon nanocrystal to the silicon substrate and each current step-down is ascribed to a single-electron capture from the silicon substrate into the silicon nanocrystal. The effect of the measurement system bandwidth on the detection of single-electron events is discussed and a procedure for extracting the threshold voltage shift associated to these events is proposed. It is shown that single-electron charging and discharging events in a memory cell with an area of 4.5 x 10(-10) cm2 can cause threshold voltage shift at room-temperature of the order of several millivolts. Qualitative explanation for the observed threshold voltage shift distribution is given.     

Integration of external and internal dosimetry in Switzerland

Individual monitoring regulations in Switzerland are based on the ICRP60 recommendations. The annual limit of 20 mSv for the effective dose applies to the sum of external and internal radiation. External radiation is monitored monthly or quarterly with TLD, DIS or CR-39 dosemeters by 10 approved external dosimetry services and reported as H(p)(10) and H(p)(0.07). Internal monitoring is done in two steps. At the workplace, simple screening measurements are done frequently in order to recognise a possible incorporation. If a nuclide dependent activity threshold is exceeded then one of the seven approved dosimetry services for internal radiation does an incorporation measurement to assess the committed effective dose E(50). The dosimetry services report all the measured or assessed dose values to the employer and to the National Dose Registry. The employer records the annually accumulated dose values into the individual dose certificate of the occupationally exposed person, both the external dose H(p)(10) and the internal dose E(50) as well as the total effective dose E = H(p)(10)+E(50). Based on the national dose registry an annual report on the dosimetry in Switzerland is published which contains the statistics for the total effective dose, as well as separate statistics for external and internal exposure.     

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

Abstract

Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for the drift motion of oxygen vacancies. We show that oxygen vacancies, which are initially ionized by trapping photoexcited hole carriers, can easily migrate under an external electric field. Thus, accumulated hole traps near the channel/dielectric interface cause negative shift of the threshold voltage, supporting the oxygen vacancy model. In addition, we find that ionized oxygen vacancies easily recover their neutral defect configurations by capturing electrons when the Fermi level increases. Our results are in good agreement with the experimental observation that applying a positive gate bias pulse of short duration eliminates hole traps and thus leads to the recovery of device stability from persistent photoconductivity.     

Dynamic and Tunable Threshold Voltage in Organic Electrochemical Transistors

In recent years, organic electrochemical transistors (OECTs) have found applications in chemical and biological sensing and interfacing, neuromorphic computing, digital logic, and printed electronics. However, the incorporation of OECTs in practical electronic circuits is limited by the relative lack of control over their threshold voltage, which is important for controlling the power consumption and noise margin in complementary and unipolar circuits. Here, the threshold voltage of OECTs is precisely tuned over a range of more than 1 V by chemically controlling the electrochemical potential at the gate electrode. This threshold voltage tunability is exploited to prepare inverters and amplifiers with improved noise margin and gain, respectively. By coupling the gate electrode with an electrochemical oscillator, single‐transistor oscillators based on OECTs with dynamic time‐varying threshold voltages are prepared. This work highlights the importance of electrochemistry at the gate electrode in determining the electrical properties of OECTs, and opens a path toward the system‐level design of low‐power OECT‐based electronics.