用三片截止型玻璃滤光片实现比色测量

截止型玻璃滤光片具有光谱透射性性好，性能稳定，工作波长容易选择等特点。本文介绍了一种巧妙利用三片截止型玻璃滤光片实现比色辐射测量的方法。用该方法测温，具有灵敏度高，抗干能力强等特点。     

红外截止滤光片及其制作方法

红外截止滤光片分吸收型和反射型两类。在吸收型红外截止滤光片中，红外吸收金属离子是包含在玻璃内的，而反射型红外截止滤光片则是通过在玻璃上镀多层能反射红外光的光学薄膜的方法制成的。由于反射型红外截止滤光片所用的多层膜比较薄，它可以比吸收型红外截止滤光片做得小巧。     

比色测温理论中带宽对测量误差影响的研究

基于比色测温原理,论述了比色测温理论中的滤光片带宽,得出滤光片带宽对测温精度的影响很大,并不能简单的将峰值透过率波长代替整个带宽。然后通过考虑滤光片的带宽导出合理的比色测温算法,并通过实验证实此算法大大减小了测温误差。     

空间用宽截止长波红外带通滤光片的设计与镀制

针对空间用宽截止长波红外带通滤光片具有通带内平均透射率高、抑制带截止深度深、波纹系数小,可适应复杂环境条件、具有高稳定性和高可靠性等特点,论述了宽截止长波红外带通滤光片的设计原则和方法.采用"会聚光红外光学系统"和等离子体辅助沉积工艺成功镀制了空间用宽截止长波红外带通滤光片.指出等离子体辅助沉积工艺更有利于长波红外滤光片膜层的显微结构改善和残余应力的消除.     

红外测温技术在汽车扭杆锻造中的应用

文中详细介绍了红外测温技术在汽车扭杆锻造中的应用,阐述了红外测温的原理及利 用红外测温方法进行温度信号的采集及处理方法,利用红外测温的原理测量钢坯温度具有无接触测量、测温响应速度快、测温一致性好等特点。     

环境温度及干扰光对主动辐射测温系统测温精度影响的讨论

在介绍一种利用InGaAs/I半导体激光器实现的实时测温系统的基础上，着重讨论了环境温度及干扰光对该系统测温精度的影响。提出了克服环境温度及干扰光对测温精度影响的两条措施：一是在调制盘与探测器之间置一窄带滤光片；另一是采用水冷遮蔽板并进行电气补偿，进行了一些必要的计算和分析，得到了一些有意义的结论。     

基于RGB数字滤光的CCD激光熔覆测温系统的标定

为提高基于彩色CCD比色测温的激光熔覆测温系 统的精度和测温范围,提出了基于RGB数字滤 光的温度标定方法。采用MIKON M390高温标准黑体炉,每隔50℃采 集不同参数下黑体炉辐射图像,在 1000～1800℃的测温范 围内对彩色CCD相机采用比色测温法进行温度标定。提出将发射率归结到待定系 数K值中,并基于最小二乘法建立K与灰度比之间的一一对应关系,减小发射率 误差;提出先用外搭载 RGB分色窄带滤光片进行图像采集和分色滤光处理,然后建立分色滤光后灰度与无分色滤光 灰度之间的映 射关系,对无RGB分色滤光片的灰度值进行数字滤光,实现光谱响应带宽的误 差校正。本文方法将系统最 大测温误差缩小至38.6℃,将原测温范围扩大近300℃。实验结果表明,基于RGB数字软滤波方法的彩 色CCD测温标定方法,简单实用、精度较高,可以较大程度提高测温范围。     

红外测温技术在浮法玻璃温度监控中的应用

介绍红外测温技术在浮法玻璃退火窑玻璃带温度场监控中的应用。设计了在线监控退火窑玻璃带温度系统,并对浮法玻璃退火窑玻璃带测温精度的影响因素及误差进行分析。     

无扫描宽范围多波长成像测温技术

多波长测温是一种先进的辐射测温技术,其原理是假定发射率光谱模型,利用测得的多波长辐射与波长发射率函数关系,求得目标的真温和发射率。多波长成像测温技术通过探测目标的多波长辐射图像信息,反演计算得到目标的温场分布。针对基于彩色CCD的多波长成像测温不能适应非线性光谱发射率模型、测温动态范围较窄等不足,提出了一种基于光阑处非等比例滤色分光的四波长无扫描成像测温方法,有效压缩了波段成像带宽,形成了四个窄波段的成像探测,适用于非线性光谱发射率模型目标宽动态范围温场测量。根据提出的测温方法研制了四波长成像测温仪。测温仪主要由窗口、中性衰减片、四色滤光片、光学物镜镜头、可见/近红外集成传感器、测量控制单元及软件等部分组成。测温仪软件由目标四个波长的单色成像图像,得到目标的真温温场分布。在激光加热条件下对800~2500 ℃目标高温温场进行了试验测试,测量结果与热电偶数据比对表明误差小于1%,具有较高的准确度和较好的动态范围适应性。     

红外测温技术在玻璃工业中的应用

本文简要介绍了红外测温技术在玻璃工业中的实际应用,用红外测温仪代替热电偶测温,变接触测温为非接触测温,工艺参数更趋合理,提高了产品质量,降低了成本。     

激光聚焦熔石英表面产生击穿的热力学效应分析

利用纳秒激光脉冲辐照熔石英玻璃产生击穿的方法,仔细观测了熔石英表面损伤的微观形貌,并基于激光击穿过程的热力学效应对损伤机理进行了研究。研究表明:激光脉冲能量的沉积主要是基于激光等离子体的逆韧致吸收效应,高温高压等离子体是导致熔石英玻璃损伤的主要因素;熔石英玻璃在击穿过程中伴随着温度升高、材料熔化、气化以及电离等过程,这些效应使得玻璃发生相变以及断裂,而冲击波效应会使得相变材料发生去除辐照区周围玻璃发生剥离而形成大范围的坑状破坏点。     

某机载光电设备窗口玻璃鸟撞仿真分析

针对某机载光电设备窗口玻璃在起飞和降落时可能受到的鸟撞情况,本文通过试验分析了玻璃的力学参数,运用软件针对不同质量的鸟体开展不同速度的撞击仿真分析,研究玻璃在撞击时的应力和变形,以及穿透时的临界速度。最终得出该机载光电设备在典型工况下的鸟撞耐受性,以此指导产品的实际工程设计,缩短研制周期。     

Efficiency Roll‐Off in Blue Emitting Phosphorescent Organic Light Emitting Diodes with Carbazole Host Materials

The efficiency roll‐off in blue phosphorescent organic light emitting diodes (OLEDs) using different carbazole compounds as the host is systematically studied. While there is no significant difference in device efficiency, OLEDs using ter‐carbazole as the host show a reduction in efficiency roll‐off at high luminance. Data from transient photoluminescence and electroluminescence measurements show that the lower triplet–triplet annihilation (TTA) and triplet–polaron quenching (TPQ) rates in devices with the ter‐carbazole host compared with other carbazole hosts are the reasons for this reduced efficiency roll‐off. It is also found that the host materials with low glass transition temperatures are more susceptible to the efficiency roll‐off problem.     

The influence of the glass-cover thickness on the magnetoimpedance of amorphous microwires

The influence of the glass-cover thickness on the magnetoimpedance of amorphous cobalt-based microwires is studied. Microwires with different values of the glass thickness were obtained by etching off the glass cover with fluorhydric acid. It was found that, as the cover thickness decreases, the magnetoimpedance ratio does not substantially change, while the intensity of the external magnetic field in which the impedance attains its maximum also decreases. The experimental results are explained using a model taking into account changes in the radial distribution of the anisotropy axes with a decrease in the glass-cover thickness.     

HgTe Nanocrystal-Based Thin-Film Transistors Fabricated on Glass Substrates

HgTe nanocrystal-based thin-film transistors (TFTs) with Al₂ O₃ top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 degC, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm²/Vmiddots, a threshold voltage of +0.2 V, and an on/off current ratio of 1times10³. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates     

Active-Matrix Amorphous-Silicon TFTs Arrays at 180$^circhboxC$on Clear Plastic and Glass Substrates for Organic Light-Emitting Displays

An amorphous-silicon thin-film transistor (TFT) process with a 180$^circhboxC$maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300$^circhboxC$–350$^circhboxC$. Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500$hboxcd/hboxm^2$.     

Low-cost process for fabricating polysilicon transistors

A process for the fabrication of p-channel polysilicon MOS transistors is described. The process is compatible with the use of low-temperature glass substrates and replaces the use of ion implantation for the source/drain doping with in situ doped polysilicon. MOS transistors made with this process exhibit an on/off current ratio of 2.5×10⁵, a mobility of 16 cm²/V-s, and a subthreshold slope of 1.3 V/decade     

Controllable Particle Adhesion with a Magnetically Actuated Synthetic Gecko Adhesive

Particle capture and release using controllable adhesion is of growing interest in many fields including reusable adhesives, solar panel cleaning, micro‐manipulation and robot locomotion where current methods of particle management are not sufficient. Here controllable adhesion to glass spheres with a new magnetically actuated synthetic gecko adhesive made from a magnetoelastomer composite is demonstrated. Adhesion is controlled by changing the effective elastic modulus of the surface through actuation of micro surface features with an external magnetic field. A compliant mechanics and magnetic torque analysis explains this general principle and generalizes the results for various geometries. Results show sphere pull‐off forces can be increased 10‐fold by changing the ridge orientation via the external magnetic field, and that the effective elastic modulus can be changed from 65 kPa to 1.5 MPa. Particle transport and release of 500‐ and 1000‐micrometer glass spheres is also demonstrated.     

紫外星敏感器光学系统设计及其鬼像分析

针对空间紫外波段航天器自主导航姿态敏感器的特殊需求,提出基于正组为FK5和熔石英、负组为QF1的新型紫外玻璃组合方法,设计了波段330~365 nm、焦距80 mm、F数1.6、视场角88的紫外星敏感器。基于近轴鬼像能量计算的方法对鬼像抑制指标进行计算。利用Code V对系统轴上一阶鬼像进行初步的分析与判断,再利用非序列光线追迹对系统轴外多阶鬼像进行仿真计算,得到完备的轴外鬼像能量分布。结果表明,该光学系统结构紧凑,像质良好,各视场成像弥散斑均方根半径10 m内能量集中度大于80%,相对畸变优于0.05%,在相差7等星的动态范围下,像面处亮星最大鬼像光斑照度仅为暗星照度的1/21,满足紫外星敏感器的探测需求。     

Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates

We report on glass etching transfer processes to obtain thermally stable large-size TFT flexible substrates on plastic film bases. The transfer processes include high-pressure jet etching that allows us to achieve good etch-rate uniformity over the large area and the utilization of an adhesive having a low elastic modulus. From the experiments and simulations, we find that using an adhesive having a low elastic modulus is effective in reducing bend of the flexible substrate under thermal stresses. The simulations also predict that the reduction in the bend corresponds to the reduction in the principal stress of the adhesive, leading to the suppression of the film peeling off from the thinned glass. Using the transfer processes, we have successfully fabricated thermally stable TFT flexible substrates (300 mmtimes350 mm times200 mum) that have satisfactory electrical characteristics