共查询到18条相似文献,搜索用时 177 毫秒
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在普通大功率垂直腔面发射激光器(VCSEL)基础上,制备出了底部出光纳米孔径VCSEL。利用聚焦离子束刻蚀技术完成纳米孔径的制作。当小孔直径为480nm×480nm时,测量得到器件的远场输出光功率为0.07mW。并分析了温度的变化对该器件远场输出光功率的影响。 相似文献
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在普通850nm垂直腔面发射激光器基础上制备出带有金属纳米颗粒结构的微小孔径垂直腔面发射激光器。当小孔和金属颗粒的直径分别为400nm和100nm时,其最大输出光功率达到0.5mW。介绍了该器件的制备工艺,从实验和理论两方面验证了金属纳米颗粒结构激发局域表面等离子体,从而使输出光功率得到提高。 相似文献
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制备了带有金属纳米颗粒结构的微小孔径垂直腔面发射激光器(NA-VCSEL)。当小孔和金属颗粒的直径分别为400 nm和100 nm时,其最大输出光功率达到了0.5 mW,比400 nm单个小孔的最大输出光功率提高了0.2 mW。实验和理论验证了金属纳米颗粒结构对NA-VCSEL输出光功率的增强作用。 相似文献
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Grabherr M. Jager R. Michalzik R. Weigl B. Reiner G. Ebeling K.J. 《Photonics Technology Letters, IEEE》1997,9(10):1304-1306
Single- and multimode vertical-cavity surface-emitting lasers (VCSELs) with three unstrained GaAs quantum wells (QWs) and emission wavelengths around 850 nm have been fabricated using molecular beam epitaxy (MBE) for crystal growth. Wet chemical etching and subsequent selective oxidation are applied for current confinement. The influence of oxide layer position on lateral index guiding is studied in detail in order to increase maximum single-mode output power. A device of 3-μm active diameter and reduced index guiding shows maximum single-mode output power of 2.25 mW with a side-mode suppression ratio (SMSR) of more than 30 dB for high-efficiency oxidized VCSELs 相似文献
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Vukusic J. Modh P. Larsson A. Hammar M. Mogg S. Christiansson U. Oscarsson V. Odling E. Malmquist J. Ghisoni M. Gong P. Griffiths E. Joel A. 《Electronics letters》2003,39(8):662-664
1.3 /spl mu/m oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (11 /spl mu/m oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce 1 mW of output power at 20/spl deg/C. The maximum operating temperature is 95/spl deg/C. Emission at 1303 nm with 1 mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance. 相似文献
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High performance selectively oxidized VCSELs and arrays forparallel high-speed optical interconnects
Mederer F. Ecker I. Joos J. Kicherer M. Unold H.J. Ebeling K.J. Grabherr M. Jager R. King R. Wiedenmann D. 《Advanced Packaging, IEEE Transactions on》2001,24(4):442-449
High-bandwidth single-mode selectively oxidized vertical-cavity surface-emitting laser (VCSEL) arrays operate at 980 nm or 850 nm emission wavelength for substrate or epitaxial side emission. Coplanar feeding lines and polyimide passivation are used to reduce electrical parasitics in top-emitting GaAs and bottom-emitting InGaAs VCSELs. To enhance fundamental single-mode emission for larger devices of reduced series resistance a surface relief transverse mode filter is employed. Fabricated VCSELs are applied in various interconnect schemes. InGaAs quantum-well based VCSELs at 935 nm emission wavelength are investigated for use in perfluorinated graded-index plastic-optical fiber (GI-POF) links. We obtain a 7 Gb/s pseudo random bit sequence (PRBS) nonreturn-to-zero (NRZ) data transmission over 80 m long 155 μm diameter GI-POF. We investigate data transmission over standard 1300 nm, 9 μm core diameter single-mode fiber with selectively oxidized single-mode GaAs and InGaAs VCSELs. We achieve biased 3 Gb/s and bias-free 1 Gb/s pseudo-random data transmission over 4.3 km at 830 nm emission wavelength where a simple fiber mode filter is used to suppress intermodal dispersion caused by the second order fiber mode. For the first time, we demonstrate 12.5 Gb/s data rate transmission of PRBS signals over 100 m graded-index multimode fiber or 1 km single-mode fiber using high performance single-mode GaAs VCSELs of 12.3 GHz modulation bandwidth emitting at λ=850 nm 相似文献
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D.A. Louderback M.A. Fish J.F. Klem D.K. Serkland K.D. Choquette G.W. Pickrell R.V. Stone P.S. Guilfoyle 《Photonics Technology Letters, IEEE》2004,16(4):963-965
We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of /spl sim/0.75 mW, with threshold currents of 1.3 mA, were achieved with /spl sim/3.5-/spl mu/m aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions. 相似文献
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垂直腔面发射激光器制作新工艺 总被引:3,自引:7,他引:3
采用一种新工艺制作了垂直腔面发射激光器(VCSEL),即用开环分布孔取代以往的环形沟道作为氧化物限制技术的注入窗口。因开环分布孔间形成多个桥,为电注入提供了天然的桥状通道,解决了电极过沟断线问题。这种新结构器件的输出功率约为以往结构器件的1.34倍。在20℃~80℃范围内,对器件的输出功率、阈值电流及波长漂移性进行了研究。60℃时最大输出光功率可达到6 mW。激射波长随温度升高呈线性变化,且向长波方向移动,速率为0.06 nm/℃。由实验结果计算出器件的热阻为1.96℃/mW。 相似文献
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A. Haglund J.S. Gustavsson P. Modh A. Larsson 《Photonics Technology Letters, IEEE》2005,17(8):1602-1604
We demonstrate that a carefully designed fundamental-mode stabilized vertical-cavity surface-emitting laser (VCSEL) using a shallow surface relief can maintain a large sidemode suppression ratio (SMSR) under strong radio frequency modulation. A number of VCSELs emitting at 850 nm, with different surface relief and oxide aperture diameters, have been experimentally investigated. For certain combinations of these diameters, the SMSR exceeds 30 dB at 2- and 5-GHz operation, even for as much as 15 dBm of input modulation power. 相似文献
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Kuo H.C. Chang Y.S. Lai F.Y. Hsueh T.H. Laih L.H. Wang S.C. 《Electronics letters》2003,39(14):1051-1053
High performance 850 nm InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85/spl deg/C. 相似文献