聚苯胺纳米材料电容性能研究

以(NH4)2S2O8为氧化剂,在1 mol/L盐酸环境下化学氧化合成超级电容器用电极材料纳米聚苯胺(PANI)。在1 mol/L H2SO4溶液中考察了材料的电容性能。结果表明:在循环伏安图上出现三对氧化还原峰,分别对应聚苯胺在三种不同氧化状态间的转化以及PANI的降解。放电电流密度为(1.0,4.5,10)×10–3A/cm2时,比容量分别为654,591,525 F/g。经恒定电流10 mA充放电循环1 000次,衰减仅为初始容量的10.7%。     

采用氧化物复合底电极的BTO薄膜结构和性能

用球磨法制备Bi4Ti3O1(2BTO)靶材。用PLD法在Pt/TiO2/SiO2/Si基片上先分别以三种氧化物SrRuO(3SRO)、LaSrCoO3(LSCO)、LaNiO3(LNO)和Pt生成复合底电极,再在其上生长了外延取向的BTO薄膜。分析了薄膜的结构和性能。结果表明,这种BTO薄膜的c轴取向得到抑制,其极化强度从0.45×10–6C/cm2提高到0.9×10–6C/cm2;矫顽场强从90×103V/cm下降到50×103V/cm。     

La掺杂对BLT薄膜微观结构与性能的影响

采用sol-gel工艺低温制备了Si基Bi4–xLaxTi3O12(BLT)铁电薄膜。研究了La掺杂量对薄膜微观结构、介电和铁电性能的影响。结果表明,600～650℃退火处理的BLT薄膜表面平整无裂纹,晶粒均匀,无焦绿石相或其它杂相,薄膜为多晶生长;La掺杂量x在0.5～0.85的BLT薄膜介电与铁电性能优良,其εr和tanδ分别介于284～289和(1.57～1.63)×10–2,4V偏压下薄膜的漏电流密度低于10–8A/cm2,Pr可达(13.0～17.5)×10–6C/cm2,Ec低至(102.5～127.8)×103V/cm。     

硫脲作还原剂制备二氧化锰及其电化学性能

通过化学液相法,用硫脲作为还原剂和高锰酸钾反应制备了无定形MnO2。用XRD和SEM研究了产物的结构和形貌,用恒流充放电和循环伏安测试考察了MnO2的电化学性能。结果表明:在0.5mol/L的Na2SO4溶液中,电位窗口为0～0.8V、电流密度为1×10–3A/cm2时,首次放电比容量为248F/g,,经过100次循环后比容量保持在232F/g。在(3～5)×10–3A/cm2的电流密度下放电比容量分别为198和182F/g,具有良好的电容特性。     

节能灯专用中高压铝电解电容器的工作电解液

开发了节能灯专用铝电解电容器的高压工作电解液(σ30℃≈1.5×10–3S/cm,Us≥480V)和中压工作电解液(σ30℃≈3×10–3S/cm,Us≥400V),分别应用于400V、15μF(φ12.5mm×20mm)和250V、33μF(φ12.5mm×20mm)电容器中,制得的电容器具有低阻抗、低漏电流、耐高频高纹波,耐高温长寿命,在带负载的耐久性试验中通过了125℃,3000h考核,适用于电子节能灯线路。     

sol-gel法制备BiLaFeO3薄膜及其电性能

用sol-gel方法在LaNiO3包覆的Si衬底上制备了(010)择优取向的BiFeO3以及Bi0.95La0.05FeO3薄膜,XRD分析结果表明,通过La的掺杂BiFeO3的择优取向度由77.0%增加到96.6%;铁电性的测试表明,通过La掺杂,使薄膜的介电性和铁电性得到了增强,剩余极化强度由0.15×10–6C/cm2增加到0.2×10–6C/cm2。     

(1–x)BiFeO3-xBaTiO3陶瓷的结构与电学性能研究

采用固相反应法制备了(1–x)BiFeO3-xBaTiO3多晶陶瓷样品,研究了 BaTiO3添加对 BiFeO3陶瓷结构、电学性能的影响。结果表明:当 x 由 0 增加到 0.4 时,样品的相结构由三方钙钛矿结构逐渐转变为立方结构,杂相有效消除;漏电流密度从 1.1×10–5A·cm–2下降至 1.1×10–7A·cm–2,相对介电常数提高了 2.6 倍,剩余极化强度增加了近 20 倍。     

阳极铝箔隧道孔的二次生长规律

将在酸性介质中产生了隧道孔的铝箔置于中性侵蚀液中继续成长。发现中性侵蚀液的组分对铝箔隧道孔形貌的影响规律:当溶液仅含Cl–时,会有新的隧道孔产生,铝箔表面隧道孔分布密度从3.63×107cm–2增加为3.72×107cm–2,隧道孔平均孔径从0.40μm扩展到0.75μm,但隧道孔长度没有明显变化;在含Cl–电解质中添加少量有机添加剂时,铝箔表面没有新的隧道孔产生,由于出现并孔现象,隧道孔分布密度反而从3.63×107cm–2降低至3.43×107cm–2,但隧道孔的孔径从0.40μm扩展到0.80μm,长度从24μm增加到37μm。     

Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

The dependence of the electron mobility and drift velocity on the growth conditions, thickness, and doping of an InAs insert placed at the center of the quantum well in a selectively doped InAlAs/InGaAs/InAlAs heterostructure has been investigated. Record enhancement of the maximum drift velocity to (2–4) × 10⁷ cm/s in an electric field of 5 × 10³ V/cm has been obtained in a 17-nm-wide quantum well with an undoped 4-nm-thick InAs insert. In the structures with additional doping of the InAs insert, which facilitates an increase in the density of electrons in the quantum well to 4.0 × 10¹² cm^?2, the maximum drift velocity is as high as 2 × 10⁷ cm/s in an electric field of 7 × 10³ V/cm.     

掺铝氧化锌陶瓷靶材的制备及其薄膜的光学性能

以Al(NO3)3.9H2O和ZnO粉体为原料,采用常压烧结方法制备了高致密度和高导电性的ZnO:Al(AZO)陶瓷靶材。研究了烧结温度对AZO靶材微观结构、相对密度和电性能的影响。当Al和Zn的摩尔比为3:100,烧结温度为1 400℃时,所制AZO靶材的致密度达96%,电阻率为2.5×10–2.cm。以烧结温度为1400℃的AZO陶瓷靶为靶材并通过直流磁控溅射在玻璃基片上制备出了高度c轴择优取向的AZO薄膜,其可见光透过率为90%,禁带宽度为3.63 eV,电阻率为1.7×10–3.cm。     

Drift mobility of carriers in porous silicon

The drift mobility of carriers in porous silicon has been studied in a wide temperature range (190–360 K) at electric field strengths of 2×10³–3×10⁴ V/cm. An exponential temperature dependence of the hole drift mobility with an activation energy of d ～ 0.14 eV was established. The density of localized states controlling the transport is evaluated.     

活性炭-聚吡咯混合电容器的电化学性能

低温下(0℃)化学氧化合成了盐酸掺杂聚吡咯。分别以聚吡咯和活性炭为电极材料组装成电化学电容器。采用扫描电镜、恒流充放电、循环伏安和交流阻抗测试仪研究了混合电容器的电化学性能。结果表明:低温下合成的聚吡咯呈颗粒状堆积,粒径为100～300nm;电流密度为6×10–3A/cm2时,混合电容器在1mol/LNa2SO4电解液中比电容高达178.6F/g,100次循环后比电容为初始容量的88.4%,漏电流仅为0.16×10–3A/cm2。     

Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors

Semiconductors - The influence exerted by the carrier concentration in the range (1–50) × 1014 cm–3 in n-4H-SiC chemical-vapor deposited (CVD) epitaxial layers on the spectral...     

印制电路板用铝硼硅酸盐玻璃结构与介电性能

通过在CaO-Al2O3-B2O3-SiO2玻璃系统中,用氧化硼逐渐替代氧化钙,研究了玻璃介电性能的变化,采用红外光谱和差示扫描量热仪分析了玻璃结构的变化。结果表明:随氧化硼含量增大,玻璃转变温度tg先降低后升高,样品的密度值从2.678降低至2.363g/cm3;室温下,1MHz时εr从6.66降低至5.38,而tanδ从1.71×10–3降低至1.25×10–3。     

Microwave Annealing of High Dose Al<Superscript>+</Superscript>-implanted 4H-SiC: Towards Device Fabrication

High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with Al⁺ at different doses and energies to obtain a dopant concentration in the range of 5 × 10¹⁹–5 × 10²⁰ cm^?3. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × 10^?2 Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × 10^?1 Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × 10²⁰ cm^?3. Vertical p ⁺-i-n diodes whose anodes were made by 1.5 × 10²⁰ cm^?3 Al⁺ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime.     

ITO玻璃衬底上PLZT铁电薄膜的制备与电性能

用sol-gel法在掺Sn的In2O3导电透明膜(ITO)衬底上,制备了La掺杂的PbZr0.5Ti0.5O3(PLZT)铁电薄膜。研究了La掺杂量对薄膜的铁电、介电和漏电性质的影响。结果表明,x(La)为5%的PLZT薄膜经650℃退火,有优良的铁电特性,外加15V电压下,剩余极化强度为35.4×10–6C/cm2,矫顽场强为111×103V/cm。100kHz时的εr和tgδ分别为984和0.13。在外加电场小于9V时,薄膜的漏电流密度不超过10–8A/cm2。     

厚度对TaN薄膜电性能的影响研究

采用直流反应磁控溅射法制备了TaN薄膜,研究了薄膜厚度对TaN薄膜微观结构及电性能的影响。结果表明,薄膜厚度对TaN薄膜的表面形貌和相结构都没有影响,但会显著影响TaN薄膜的电学性能。在87~424 nm的范围内,随着薄膜厚度的增大,所制TaN薄膜的电阻率从555×10–6.cm减小到285×10–6.cm,方阻从84/□减小到9/□,电阻温度系数(TCR)从–120×10–6/℃增加到+50×10–6/℃。可以通过调节薄膜的厚度调节TaN薄膜的电阻率和TCR。     

Surface breakdown in silicon planar junctions—A computer-aided experimental determination of the critical field

Surface breakdown in silicon planar junctions is analysed with emphasis on the evaluation of the critical field (i.e., the maximum electric field within the depletion region at breakdown). This parameter is determined by a computer-aided experimental procedure consisting in relaxation field calculations with boundary conditions governed by junction breakdown voltage (at given gate voltage) as measured on specially processed gate-controlled diodes. The idealization (infinite doping) of the highly doped side of the junction, encountered in previous works, has been eliminated. Values of the critical field determined are in the range of 1 × 10⁶ V/cm (1·0 × 10⁶ V/cm for 1·0 μm gate-oxide and 1·4 × 10⁶ V/cm for 0·3 μm gate-oxide). These values are substantially higher than those estimated by other authors (5–6 × 10⁵ V/cm) and are consistent with independent experimental findings on avalanche (hot-carrier) injection in silicon diodes.     

高导电片状银包铜粉的制备技术研究

采用[Ag(NH3)]+溶液对片状铜粉进行包覆,研究了铜粉粒径、[Ag(NH3)]+溶液浓度、包覆温度、分散剂含量等因素对银包铜粉银含量和电阻率等的影响。结果表明:通过控制包覆温度(60℃)、银氨络离子浓度(0.8mol·L–1)以及分散剂含量(1.0g·L–1),得到了电阻率为0.8×10–3?·cm的银包铜粉。XRD分析表明,该银包铜粉只有Ag和Cu相,不含中间产物。银包铜粉松装密度为0.50g·cm–3左右,比表面积为3.1~3.3m2·g–1。     

稀土氧化物掺杂对BST陶瓷热释电性能的影响

采用轧膜成型工艺制备了掺杂有稀土氧化物的钛酸锶钡(BST)陶瓷,研究了不同稀土(Sc,Y,La,Ce,Pr,Nd和Sm)氧化物掺杂对其微观形貌、介电性能和热释电性能的影响。结果表明,Sc掺杂大幅降低了BST陶瓷的εr,严重劣化了BST陶瓷的热释电性能,并引起了长条状晶粒在BST陶瓷中的出现;Y掺杂则显著提高了BST陶瓷的热释电性能,并最终获得了εr为7111、tanδ为0.65×10–2、热释电系数p为5.5×10–7C·cm–2·℃–1、探测率优值Fd为8.49×10–5Pa–1/2的热释电BST陶瓷材料,有望在红外探测领域得到应用。