Effects of Mn-dopant on phase,microstructure and electrical properties in Bi3.25La0.75Ti3O12 ceramics

Lanthanum-doped bismuth titanate (Bi_3.25La_0.75Ti₃O₁₂ or BLT) is important ferroelectric materials for FeRAMS, which need further improved by substituting isovalent cations to assist the elimination of defects such as oxygen vacancy. In this work, fabrication and investigation of substituting Mn⁴⁺ for Ti⁴⁺ ion on B-site of Bi_3.25La_0.75Ti₃O₁₂ ceramics were carried out. X-ray diffraction patterns of BLTMn ceramics indicated orthorhombic structure with lattice distortion, especially for samples with higher concentration of MnO₂ dopant. Microstructural investigation showed that all ceramics composed mainly of plate-like grains. An increase in MnO₂ doping content increased diameter and thickness of grains but reduced density of the ceramics. Electrical conductivity was found to decrease while dielectric constant increased with Mn⁴⁺ doping concentration.     

Effect of La substitution on the structural and electrical properties of BaBi4−xLaxTi4O15

Pure and lanthanum doped barium bismuth titanate BaBi_4−xLa_xTi₄O₁₅ (BBLT, x=0, 0.05, 0.15, 0.30) ceramics were prepared utilizing solid state method. The X-ray diffraction (XRD) data confirmed formation of single-phase Aurivillius compounds while SEM micrographs did not show evident grain size change of doped ceramics. Dielectric properties were investigated in 1.21 kHz to 1 MHz frequency range and in the temperature range of 20 to 727 °C. When Bi³⁺ is substituted with La³⁺, a significant disorder was induced and the material exhibited broadening of the phase transition. Impedance analysis confirmed the presence of two semicircular arcs in doped samples suggesting the existence of grain and grain-boundary conduction. The dc-conductivity and activation energies were evaluated for all compositions.     

Effect of La-doping on the properties of CaCu3Ti4O12 dielectric ceramics

Nano-size Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ (χ = 0.00, 0.05, 0.10, 0.15 and 0.20) precursor powders were prepared via the sol–gel method and the citrate auto-ignition route and then processed into micro-crystal Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics under heat treatment. Characterization of the as-obtained ceramics with XRD and SEM showed an average grain sizes of ∼1–2 μm, indicating La³⁺ amount to have little impact on grain size. The room-temperature dielectric constant of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics sintered at 1000 °C was of the order of 10³–10⁴ despite the variation of χ values. Compared with CaCu₃Ti₄O₁₂, La³⁺-doped CaCu₃Ti₄O₁₂ showed a flatter dielectric constant curve related to frequency. It was found that the loss tangent of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics was less than 0.20 in ∼600–10⁵ Hz region, which rapidly decreased to a minimum value of 0.03 by La³⁺doping with χ = 0.05. Our measurement of the ceramics conductivities (σ) also indicated that the appropriate introduction of La³⁺ into CaCu₃Ti₄O₁₂ would distinctly result in its dielectric properties.     

Enhanced dielectric and piezoelectric properties in Na0.5Bi4.5Ti4O15 ceramics with Pr-doping

The bismuth layer-structured Na_0.5Bi_4.5-xPr_xTi₄O₁₅ (x?=?0, 0.1, 0.2, 0.3, 0.4, and 0.5) (NBT-xPr³⁺) ceramics were fabricated using the traditional solid reaction process. The effect of different Pr³⁺ contents on dielectric, ferroelectric and piezoelectric properties of Na_0.5Bi_4.5Ti₄O₁₅ ceramics were investigated. The grain size of Pr³⁺-doping ceramics was found to be smaller than that of pure one, the maximum dielectric constant and Curie temperature T_c gradually decreased with increasing Pr³⁺ contents, and the dielectric loss decreased at high temperature by Pr³⁺-doping. Moreover, the activation energy (E_a), resistivity (Z’), remanent polarization (2P_r) and piezoelectric constant (d₃₃) increased by Pr³⁺-doping. The NBT-xPr³⁺ ceramics with x?=?0.3 achieved the optimal properties with the maximum dielectric constant of 1109.18, minimum loss of 0.00822 (250?kHz), E_a of 1.122?eV, Z’ of 7.9?kΩ?cm (725 ºC), d₃₃ of 18 pC/N, 2P_r of 12.04 μC/cm². The enhancement was due to the addition of Pr³⁺ which suppressed the decreasing of resistivity at high temperature and made it possible for NBT-xPr³⁺ ceramics to be poled in perpendicular direction, implying that it is a great improvement for Na_0.5Bi_4.5Ti₄O₁₅ ceramics in electrical properties.     

Solid state reaction preparation and enhanced red luminescence of S-doped La2Mo2O9:Prphosphors

Red-light-emitting phosphors of La₂Mo₂O₉:Pr³⁺ and S-doped La₂Mo₂O₉:Pr³⁺ were prepared by high temperature solid state reaction. Under the excitation of 450 nm blue light, all samples produced a red emission peak at 650 nm corresponding to the characteristic transition of Pr³⁺ (³P₀→³F₂). The dependence of Pr³⁺ doping content (x) on the luminescent intensity was analyzed, and the optimal doping content of Pr³⁺ was x=0.07. After a small quantity of sulfur was introduced into the system, the luminescence intensity of phosphors was obviously enhanced. The reasons for the enhancement of luminescence are due to improved crystallization after S doping and the relatively large electronegativity difference between S and Mo. Additionally, the coincidence of the excitation wavelength with the emission of GaN chips may recommend this phosphor system as a potential candidate for use in white light-emitting diodes.     

Relaxor behavior in (Ba1−3x/2Bix)(ZryTi1−y)O3 ceramics

New ferroelectric ceramics Bi-BZT of ABO₃ perovskite type were synthesized in the (Ba_1−3x/2Bi_x)(Zr_yTi_1−y)O₃ system by solid state reaction route. The effect of the substitution of barium by bismuth in the A cationic site on structural and dielectric properties was investigated. The dielectric constant was studied in the temperature range from 20 K to 320 K at frequencies ranging from 0.2 to 100 kHz. A clear relaxor behavior was observed for samples with x ≥ 0.075 and y = 0.1. In this case the value of the relaxation parameter γ ≈ 2 estimated from the linear fit of the modified Curie–Weiss law, indicates the relaxor nature of the Bi-BZT ceramics. The dielectric relaxation rate follows Vogel–Fulcher relation with an activation energy of 0.26 eV and 0.27 eV, an attempt frequency f₀ = 3.4 × 10¹² Hz and 5.7 × 10¹² Hz and a static freezing temperature T_VF = 98 K and 94 K respectively for x = 0.075 and x = 0.1.     

High energy storage density and discharging efficiency in La3+/Nb5+-co-substituted (Bi0.5Na0.5)0.94Ba0.06TiO3 ceramics

In this work, [(Bi_1-xLa_x)_0.5Na_0.5]_0.94Ba_0.06(Ti_1-5y/4Nb_y)O₃ ceramics have been developed by the dual-substitution of La³⁺ for Bi³⁺ and Nb⁵⁺ for Ti⁴⁺ and prepared by an ordinary sintering technique. All ceramics can be well-sintered at 1200 °C. The addition of La³⁺ and Nb⁵⁺ reduces the grain size and improve the dielectric breakdown strength of the ceramics; moreover, after the introduction of La³⁺ and Nb⁵⁺, the remanent polarization of the ceramics is significantly reduced, while the maximum polarization remains the same large value as that of the ceramic without the doping of La³⁺ and Nb⁵⁺. As a result, high energy storage density and discharge efficiency are achieved at x/y = 0.07/0.02, giving the large storage density of 1.83 J/cm³ and high discharging efficiency of 70%. The present work presents a feasible strategy to develop energy storage materials based on perovskite ferroelectrics by the partial substitutions in the A and B sites.     

Investigation on the anti-reduction mechanism of Ti4+ in high dielectric constant system Ca0.9La0.067TiO3 by doping with Al2O3

Ca_0.9La_0.067TiO₃ (abbreviated as CLT) ceramics doped with different amount of Al₂O₃ were prepared via the solid state reaction method. The anti-reduction mechanism of Ti⁴⁺ in CLT ceramics was carefully investigated. X-ray diffraction (XRD) was used to analyze the phase composition and lattice structure. Meanwhile, the Rietveld method was taken to calculate the lattice parameters. X-ray photoelectron spectroscopy (XPS) was employed to study the valence variation of Ti ions in CLT ceramics without and with Al₂O₃. The results showed that Al³⁺ substituted for Ti⁴⁺ to form solid solution and the solid solubility limit of Al³⁺ is near 1.11 mol%. Furthermore, the reduction of Ti⁴⁺ in CLT ceramics was restrained by acceptor doping process and the Q × f values of CLT ceramics were improved significantly. The CLT ceramic doped with 1.11 mol% Al₂O₃ exhibited good microwave dielectric properties: ε_r = 141, Q × f = 6848 GHz, τ_f = 576 ppm/°C.     

Intercluster porous nanocomposites from combination of [AlO4Al12(OH)24(H2O)12]7+ cation and Anderson-type [Al1? x Cr x Mo6O24H6]3? anion: XRD, TG-DTA, SEM-EDAX and EPR studies

The synthesis of intercluster porous nanocomposites obtained from polyoxometallate compounds such as the [AlO₄Al₁₂(OH)₂₄(H₂O)₁₂]⁷⁺ cation (named Al₁₃) and the Anderson-type [Al_1−x Cr _x Mo₆O₂₄H₆]³⁻ anion (named Al_1−x Cr _x Mo₆) has been performed in order to study the interaction between the two cluster ions, the stability of the XMo₆ planar configuration, the products obtained after thermal treatment, the structure and the local symmetry of the Cr³⁺ species. Chemical, thermal, structural and spectroscopic characterizations of the original and thermally treated phases have been followed by different techniques such as TG-DTA, XRD, SEM-EDAX, and mainly by EPR. All the results have shown that the structure of the intercluster nanocomposites (Al₁₃)(Al_1−x Cr _x Mo₆)₂ precursors is similar to that reported by Son et al. for the chromium-free (Al₁₃)(AlMo₆)₂ intercluster nanocomposite [Son et al., J. Am. Chem. Soc. 122 (2000) 7432]. After thermal treatment in air at several temperatures of the (Al₁₃)(Al_1−x Cr _x Mo₆)₂ nanocomposites the following phases have been observed and characterised: (i) at 400 °C an amorphous phase containing dispersed Cr³⁺ ions; (ii) at 700 °C a crystalline phase corresponding to Cr₂(MoO₄)₃/Al₂(MoO₄)₃ solid solutions; (iii) at 950 °C α-Al₂O₃/Cr₂O₃ solid solutions with a random dispersion of the Cr³⁺ ions.     

Dielectric,ferroelectric, and photoluminescent properties of Sm-doped Bi4Ti3O12 thin films synthesized by sol-gel method

We report on the structure, dielectric, ferroelectric, and photoluminescent properties of Sm³⁺-doped Bi₄Ti₃O₁₂ thin films which were prepared on fused silica and Pt/Ti/SiO₂/Si substrates by sol-gel method. The X-ray diffraction analysis confirmed that the Bi_4-xSm_xTi₃O₁₂ (BSmT) thin films were well crystallized in layered perovskite structure without any secondary phase. Raman spectra indicated that the structure of BSmT thin films was significantly distorted because of the Sm³⁺ doping. An appropriate doping amount of Sm³⁺ ions leads to obvious enhancement in ferroelectric and dielectric properties of BSmT thin films due to structure distortion and reduction in defects. In addition, the BSmT thin films also show orange-red color emission at 601?nm and long florescence lifetime (> 0.6?ms). This study indicated that lead-free BSmT thin films, which are featuring good electrical and photoluminescent properties, may have potential applications in integrated optoelectronic devices.     

Self-assembly of BixTi1−xO2 visible photocatalyst with core–shell structure and enhanced activity

Mesoporous Bi_xTi_1−xO₂ spheres with core–shell chamber were prepared by alcoholysis under solvothermal conditions. The cross-condensation between Ti–OH and Bi–OH ensured complete incorporation of Bi-dopants into TiO₂ lattice, though Bi atom is much bigger than Ti. Meanwhile, the aggregation of titania building clusters into spheres and their subsequent reactions including dissolution and re-deposition processes lead to the hollow spheres with tunable interior structure. The Bi-doping induced strong spectral response in visible region owing to the formation of narrow intermediate energy band gaps. Meanwhile, multiple reflections within the sphere interior voids promoted the light absorbance. As a result, the as-prepared Bi_xTi_1−xO₂ spheres exhibited much higher activity than the undoped TiO₂, the Bi₂O₃/TiO₂ obtained by impregnating the TiO₂ with Bi(NO₃)₃ solution, and the Bi_xTi_1−xO₂ after being ground during photodegradation of p-chlorophenol under visible light irradiation. Meanwhile, the Bi_xTi_1−xO₂ could be used repetitively for 10 times owing to the high hydrothermal stability and the absence of Bi-leaching.     

Microstructural,structural and electrical properties of La3+-modified Bi4Ti3O12 ferroelectric ceramics

Bi_4?xLa_xTi₃O₁₂ (BLT) ceramics were prepared and studied in this work in terms of La³⁺-modified microstructure and phase development as well as electrical response. According to the results processed from X-ray diffraction and electrical measurements, the solubility limit (x_L) of La³⁺ into the Bi₄Ti₃O₁₂ (BIT) matrix was here found to locate slightly above x = 1.5. Further, La³⁺ had the effect of reducing the material grain size, while changing its morphology from the plate-like form, typical of BIT ceramics, to a spherical-like one. The electrical results presented and discussed here also include the behavior of the temperature of the ferroelectric–paraelectric phase transition as well as the normal or diffuse and/or relaxor nature of this transition depending on the La³⁺ content.     

Dielectric and optical properties of Ni doped Na0.5Bi0.5TiO3

Polycrystalline Ni doped Na_.5Bi_0.5TiO₃ samples (Na_0.5Bi_0.5)Ti_1-xNi_xO_3, (x?=?0.5, 0.10, 0.15) have been prepared by solid state reaction. The appearance of the additional peak in X-ray diffraction pattern indicates the ordering of Ti⁴⁺ and Ni²⁺ ions. Polygonal grains are converted into flakes with an increase of Ni concentration. Replacement of Ti⁴⁺ by Ni²⁺ strongly modifies the relative contribution of two peaks in the Raman bands within 200–400?cm^?1. Oxygen vacancy is observed in X-ray photoelectron spectrum to maintain charge neutrality due to aliovalent doping. Broad diffuse phase transition centered at the dielectric constant maximum indicates relaxor behaviour. Comparison between impedance and electric modulus spectrum suggests non-Debye relaxation. The ac conductivity follows the power law with the frequency exponent lies 0.52???0.72. The generation of holes by divalent Ni dopant at tetravalent Ti sites enhances optical band gap.     

Complex Effect of Sm3+/W6+ Codoping on α‐β Phase Transformation and Phonon Scattering of Oxygen‐Deficient La2Mo2O9

Lanthanum molybdate, La₂Mo₂O₉, has been attracted considerable attention owing to its high concentration of intrinsic oxygen vacancies, which could be reflected by enhanced phonon scattering and low thermal conductivity. A new series of La₂Mo₂O₉‐based oxides of the general formula La_2?xSm_xMo_2?xW_xO₉, where x ≤ 0.2, were synthesized by citric acid sol–gel process. The variation in thermal conductivity with Sm³⁺and W⁶⁺ fractions was analyzed based on structure information provided by X‐ray diffraction and Raman spectroscopy. The fully dense La_2?xSm_xMo_2?xW_xO₉ ceramics showed a minimum thermal conductivity value [κ = 0.84 W·(m·K)^?1,T = 1073 K] at the composition of La_1.8Sm_0.2Mo_1.8W_0.2O₉, which stems from the multiple enhanced phonon scatterings due to mass and strain fluctuations at the La³⁺ and Mo⁶⁺ sites as well as the high concentration of intrinsic oxygen vacancies embedded in the crystal lattice. The thermal conductivities present an abrupt decrease at the structural transition, which is due to the phase transformation from a low‐temperature ordered form (monoclinic α‐La₂Mo₂O₉) to a high‐temperature disordered form (cubic β‐La₂Mo₂O₉₎.     

Electrical and photoluminescence properties of Sm3+ doped Na0.5La0.5Bi8-xSmxTi7O27 ceramics

In this study, Sm³⁺ doped Na_0.5La_0.5Bi_8-xSm_xTi₇O₂₇ (NBT-BITL-xSm, x = 0, 0.01, 0.015, 0.02, and 0.03) ceramics were synthesized via a conventional solid-state reaction process. The structural, electrical, and photoluminescence properties of NBT-BITL-xSm ceramics were systematically investigated. The crystal structure of NBT-BITL-xSm was refined using XRD Rietveld refinement and found to possess a single orthorhombic structure at room temperature. Raman spectroscopy revealed that Sm³⁺ ions preferred to substitute for Bi³⁺ located in the A-sites of pseudo-perovskite layers, inducing a slight decrease in orthorhombic distortion. Strong characteristic emission peaks of Sm³⁺ ions were observed in orange-red regions under a 407 nm laser source, and the sample with x = 0.015 achieved the optimal photoluminescent property. Dielectric measurements showed double anomaly permittivity peaks at the temperature of 589 and 600^°C (T_m and T_c, respectively). The complex impedance spectrum indicated that the electrical conductivities mainly originated from crystal grains at high temperature. The activation energy was calculated to be 1.37–1.44 eV from Arrhenius fitting results. After Sm³⁺ substitution, the activation energy for conductivity was increased as a result of reduced oxygen vacancies.     

Effect of Mn-doping on the structure and electrical properties of (Pb0.325Sr0.675)TiO3 ceramics

Pb_0.325Sr_0.675Ti_1-xMn_xO₃ ceramics (x?=?0, 0.001, 0.005, 0.01, and 0.05) were successfully prepared by traditional solid-state reaction method. It was found that the lattice constant calculated through Rietveld refinement initially increased and then decreased with increasing Mn content, which was attributed to the variation in valence state of Mn and Ti ions. The microstructure gradually varied from the coexistence of large grains and fine grains for x?=?0 to the uniform grain for x?=?0.05 by increasing the doping Mn ions. With increasing Mn content from x?=?0 to x?=?0.05, the Curie temperature (Tc) dramatically decreased from 25?°C to ??40?°C and dielectric maximum decreased from 27,100 to 13,200. Pb_0.325Sr_0.675Ti_1-xMn_xO₃ ceramics with x?=?0.001 showed the lowest dielectric loss of 0.006 with a relatively high dielectric peak value of ~ 21,000. The grain boundaries resistance obtained from the complex impedance decreased with the increase of Mn content. The decrease in resistance was ascribed to oxygen vacancies and electronics produced by the change of ionic valence state. X-ray photoemission spectroscopy revealed that Ti ions were Ti⁴⁺ and the valences of Mn ions were deduced to be mainly in the form of Mn²⁺ and/or Mn³⁺ for ceramics with low content of Mn, while the Ti ions were in the form of Ti³⁺ and Ti⁴⁺ and Mn ions were diverse valence states with the coexistence of Mn²⁺, Mn³⁺, and Mn⁴⁺ for ceramics with x?=?0.01 and 0.05.     

Synthesis and thermal expansion properties of Y2−xLaxMo3O12 (x=0, 0.5, 2)

Y_2−xLa_xMo₃O₁₂ (x=0, 0.5, 2) ceramics were successfully synthesized by the solid state reaction method. The microstructure, composition and thermal expansion property of the resulting samples were investigated by X-ray diffraction (XRD), thermogravimetric analysis (TGA), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS) and dilatometry. Results indicate that the Y_1.5La_0.5Mo₃O₁₂ crystallizes in monoclinic Tb₂Mo₃O₁₂-type structure and it is non-hygroscopic. The Y_1.5La_0.5Mo₃O₁₂ ceramic is denser than the Y₂Mo₃O₁₂ and La₂Mo₃O₁₂ ceramics, and its relative density can reach 94.12% of the theoretical value. Most importantly, it shows almost zero thermal expansion and its thermal coefficient is 0.87×10⁻⁶ K⁻¹ from 178 °C to 600 °C. Y₂Mo₃O₁₂ ceramic shows negative thermal expansion whereas La₂Mo₃O₁₂ ceramic shows positive thermal expansion, their thermal expansion coefficients being−12.06×10⁻⁶ K⁻¹ and 8.88×10⁻⁶×10⁻⁶ K⁻¹, respectively.     

Effects of Bi2Mo2O9 addition on the sintering characteristics and microwave dielectric properties of BiSbO4 ceramics

In this study, densification, microstructural evolution and microwave dielectric properties of (1 − x)BiSbO₄–xBi₂Mo₂O₉ ceramics (x = 0–0.25) were investigated. Bi₂Mo₂O₉ was selected as the sintering aid as well as the modifier of the dielectric properties for BiSbO₄ ceramic. In comparison with pure BiSbO₄ densified at 1100 °C, the 0.75BiSbO₄–0.25Bi₂Mo₂O₉ composites emerged to reach maximum sintering density at 775 °C. No other second phase was detected while the microstructure exhibited a bimodal grain size distribution as both 1–2 μm large grains of Bi₂Mo₂O₉ and 0.2–0.5 μm fine grains of BiSbO₄ were observed. The ceramic with the best performance in terms of microwave dielectric properties in this system is found to be the 0.82BiSbO₄–0.18Bi₂Mo₂O₉ composite, which reports a ?_r of 24.3, a Q × f of 24,019 GHz, and a τ_f of −4 ppm/°C when sintered at 825 °C.     

Electrical properties of La2-xPrxTi2O7 (x = 0–0.3) ceramics

The electrical properties of La₂Ti₂O₇ (LTO) ceramics have been enhanced through the substitution of La³⁺ ions by Pr³⁺ ions. Almost all doped Pr³⁺ ions will get at A - site without causing a change on monoclinic phase of LTO. The average grain size is 17.8 μm for La_1.9Pr_0.1Ti₂O₇ ceramics. The relaxation activation energy which is contributed by defect dipoles that are formed from TiO₆ oxygen octahedrons’ distortions in grains is 1.6 eV for La_1.8Pr_0.2Ti₂O₇ ceramics. This kind of defects will be activated from 520 °C and completely be activated until 650 °C. The piezoelectric coefficient d₃₃ = 3.0 pC/N of La_2-xPr_xTi₂O₇ ceramics maintains stable when the Pr³⁺ doping content x ranging from 0.1 to 0.3.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.