Effect of CuO/MnO additives on microstructure and microwave dielectric properties of 3ZrO2-3TiO2-ZnNb2O6 ceramics

The effect of CuO/MnO additives on phase composition, microstructures, sintering behavior, and microwave dielectric properties of 3ZrO₂-3TiO₂-ZnNb₂O₆ (3Z-3T-ZN) ceramics prepared by conventional solid-state route were systematically investigated. CuO/MnO doped ceramics exhibited a main phase of α-PbO₂-structured ZrTi₂O₆ and a secondary phase of rutile TiO₂. SEM results showed that the grain size of MnO doped ceramics became larger with increasing amount of dopants. The presence of CuO/MnO additives effectively reduced the sintering temperature of 3Z-3T-ZN ceramics to 1220 °C. MnO doped into ceramics could enhance the Q×f values significantly. The 0.5 wt% CuO doped 3Z-3T-ZN ceramics with 0.5 wt% of MnO, sintered at 1220 °C for 4 h, was measured to show superior microwave dielectric properties, with an ε_r of 41.02, a Q×f value of 44,230 GHz (at 5.2 GHz), and τ_f value of +2.32 ppm/°C.     

Low-temperature sintering and microwave dielectric properties of Nd(Co1/2Ti1/2)O3 ceramics using glass addition of oxides

The microstructures and microwave dielectric characteristics of complex perovskite Nd(Co_1/2Ti_1/2)O₃ ceramics with 60P₂O₅–15ZnO–5La₂O₃–5Al₂O₃–5Na₂O–5MgO–5Yb₂O₃ (PZLANMY) additions (1–4 wt%) prepared through the conventional solid-state route were investigated. It was found that Nd(Co_1/2Ti_1/2)O₃ ceramics can be sintered at 1210 °C owing to the sintering aid of PZLANMY-glass addition. At 1300 °C, Nd(Co_1/2Ti_1/2)O₃ ceramics with 1 wt% of PZLANMY-glass addition possess a dielectric constant (ε_r) of 27, a Q×f value of 64,000 GHz and a temperature coefficient of resonant frequency (τ_f) of ?29 ppm/°C. The PZLANMY-glass doped Nd(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices that require low sintering temperature.     

Low firing and microwave dielectric properties of BaTi4O9 with B2O3–ZnO–La2O3 glass addition

A high-Q low firing ceramics material was fabricated from a composite of 80 wt% of BaTi₄O₉ powder and 20 wt% of B₂O₃–ZnO–La₂O₃ glass flux. The sample sintered at 900 °C for 3 h had the maximum bulk density. B₂O₃–ZnO–La₂O₃ glass was found to act as the sintering aid. The material sintered at 900 °C for 3 h consists of BaTi₄O₉, LaBO₃, an unidentified crystal phase and residual glass phase, and possesses excellent microwave dielectric properties: permittivity k ≈ 27, quality factor Q × f ≈ 20,000 GHz, temperature coefficient of resonant frequency τ_f ≈ 6.5 ppm/°C.     

Effects of glass additions on the microstructure and dielectric properties of barium strontium titanate (BST) ceramics

Commercial glass frits (lead borosilicate glasses) were employed as the sintering aids to reduce the sintering temperatures of BST ceramics. The effects of the glass content and the sintering temperature on the microstructures, dielectric properties and tunabilities of BST ceramics have been investigated. Densification of BST ceramics of 5 wt% glass content becomes significant from sintering temperature of 1000 °C. The glass content shows a strong influence on the Curie temperature T_c, permittivity and the diffuse transition. X-ray results show all BST ceramics exhibit a perovskite structure and also the formation of a secondary phase, Ba₂TiSi₂O₈. The shift of BST diffraction peaks towards higher angle with increasing the glass content indicates the substitution of Pb²⁺ in Ba²⁺ site, which mainly accounts for the diffuse transition observed in these BST ceramics. BST ceramics with 10 wt% glass additives possess the highest tunability at all four sintering temperatures. A tunability of 12.2% at a bias field of 1 kV/mm was achieved for BST ceramics with 10 wt% glass content sintered at 900 °C.     

Structure and dielectric properties of novel low temperature co-fired Bi2O3-RE2O3-MoO3 (RE=Pr,Nd, Sm,and Yb) based microwave ceramics

Novel monoclinic Bi₂O₃-xRE₂O₃-yMoO₃ (RE=Pr, Nd, Sm, and Yb) based low temperature co-fired ceramics (LTCC) systems with high sintering density and low microwave dielectric loss are synthesized by conventional solid state reaction technique. The structure and dielectric properties of Bi₂O₃-xRE₂O₃-yMoO₃ ceramics are investigated. Dense BiNdMoO₆ ceramics sintered at 900 °C for 8 h in air have a low dielectric constant ε_r=~7.5, a high quality factor Q×f=~ 24, 800 GHz at 7.0 GHz, and τ_f=~−16 ppm/̊C. Especially, good chemical compatibility of BiNdMoO₆ with Ag electrodes is represented as well. In contrast, BiSmMoO₆ ceramics sintered at 1000 °C for 8 h show enhanced Q×f=~43, 700 GHz at 7.8 GHz with ε_r=~8.5 and τ_f=~−27 ppm/°C. Bi₂O₃-xRE₂O₃-yMoO₃ (RE=Pr, Nd, Sm, and Yb) based ceramics could be considered as promising microwave ceramics for LTCC applications.     

Fabrication and characterization of highly transparent Er:Y2O3 ceramics with ZrO2 and La2O3 additives

In this study, we report highly transparent Er:Y₂O₃ ceramics (0–10 at% Er) fabricated by a vacuum sintering method using compound sintering additives of ZrO₂ and La₂O₃. The transmittance, microstructure, thermal conductivity and mechanical properties of the Er:Y₂O₃ ceramics were evaluated. The in-line transmittance of all of the Er:Y₂O₃ ceramics (1.2 mm thick) exceeds 83% at 1100 nm and 81% at 600 nm. With an increase in the Er doping concentration from 0 to 10 at%, the average grain size, microhardness and fracture toughness remain nearly unchanged, while the thermal conductivity decreases slightly from 5.55 to 4.89 W/m K. A nearly homogeneous doping level of the laser activator Er up to 10 at% in macro-and nanoscale was measured along the radial direction from the center to the edge of a disk specimen, which is the prominent advantage of polycrystalline over single-crystal materials. Based on the finding of excellent optical and mechanical properties, the compound sintering additives of ZrO₂ and La₂O₃ are demonstrated to be effective for the fabrication of transparent Y₂O₃ ceramics. These results may provide a guideline for the application of transparent Er:Y₂O₃ laser ceramics.     

Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics

The B₂O₃ added Ba(Zn_1/3Nb_2/3)O₃ (BBZN) ceramic was sintered at 900 °C. BaB₄O₇, BaB₂O₄, and BaNb₂O₆ second phases were found in the BBZN ceramic. Since BaB₄O₇ and BaB₂O₄ second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (ɛ_r) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τ_f) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B₂O₃ sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B₂O₅) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of ɛ_r = 36, Q × f = 19,000 GHz and τ_f = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.     

Low temperature sintering of the Ba2Ti9O20 ceramics using B2O3/CuO and BaCu(B2O5) additives

The effects of B₂O₃/CuO and BaCu(B₂O₅) additives on the sintering temperature and microwave dielectric properties of Ba₂Ti₉O₂₀ ceramics were investigated. The B₂O₃ added Ba₂Ti₉O₂₀ ceramics were not able to be sintered below 1000 °C. However, when both CuO and B₂O₃ were added, they were sintered below 900 °C and had the good microwave dielectric properties. It was suggested that a liquid phase with the composition of BaCu(B₂O₅) was formed during the sintering and assisted the densification of the Ba₂Ti₉O₂₀ ceramics at low temperature. BaCu(B₂O₅) powders were produced and used to reduce the sintering temperature of the Ba₂Ti₉O₂₀ ceramics. Good microwave dielectric properties of Qxf = 16,000 GHz, ɛ_r = 36.0 and τ_f = 9.11 ppm/°C were obtained for the Ba₂Ti₉O₂₀ ceramics containing 10.0 mol% BaCu(B₂O₅) sintered at 875 °C for 2 h.     

Effect of BaCu(B2O5) on the sintering and microwave dielectric properties of Ca0.4Li0.3Sm0.05Nd0.25TiO3 ceramics

The sintering behaviors and microwave dielectric properties of the Ca_0.4Li_0.3Sm_0.05Nd_0.25TiO₃ (abbreviated CLSNT) ceramics with different amounts of BaCu(B₂O₅) addition were investigated in this paper. Adding BaCu(B₂O₅) to CLSNT lowered its sintering temperature from 1300 °C to 925 °C. No secondary phase was observed in the CLSNT ceramics and complete solid solution of the complex perovskite phase was confirmed. The CLSNT ceramics with small amounts of BaCu(B₂O₅) addition could be well sintered at 925 °C without much degradation in the microwave dielectric properties. Especially, the 1.75 wt.% BaCu(B₂O₅)-doped CLSNT ceramic sample sintered at 925 °C for 3 h had optimum microwave dielectric properties of ε_r = 93.5 ± 3.2, Q × f = 6486 ± 434 GHz, and τ_f = 5 ± 1.5 ppm/°C (at 3–4 GHz), enabling it a promising candidate material for LTCC applications. Obviously, BaCu(B₂O₅) could be a suitable sintering aid to facilitate the densification and microwave dielectric properties of the CLSNT ceramics.     

Effect of Al2O3 on the structure and microwave dielectric properties of Ca0.7Ti0.7La0.3Al0.3O3

The effect of excess Al₂O₃ on the densification, structure and microwave dielectric properties of Ca_0.7Ti_0.7La_0.3Al_0.3O₃ (CTLA) was investigated. CTLA ceramics were prepared using the conventional mixed oxide route. Excess Al₂O₃ in the range of 0.1–0.5 wt% was added. It was found that Al₂O₃ improved the densification. A phase rich in Ca and Al was found in the microstructure of Al₂O₃ doped samples. Additions of Al₂O₃ coupled with the slow cooling after sintering improved the microwave dielectric properties. CTLA ceramics with 0.25 wt% Al₂O₃ cooled at 5 °C/h showed high density and a uniform grain structure with ɛ_r = 46, Q × f = 38,289 and τ_f = +12 ppm/°C at 4 GHz. XRD and TEM examinations showed the presence of (1 1 2) and (1 1 0) type twins arising from a⁻a⁻c⁺ tilt system with the presence of anti-phase domain boundaries from the displacement of A-site cations of the orthorhombic perovskite structure.     

Microstructure,electrical and mechanical properties of MgO nanoparticles-reinforced porous PZT 95/5 ferroelectric ceramics

Porous Pb (Zr_0.95Ti_0.05) O₃/xMgO (PZT/MgO, x=0, 0.1, 0.2, 0.5 and 1.0 wt%) ferroelectric ceramics were prepared with MgO nanoparticles as reinforcing phase. The effects of MgO nanoparticles on the phase, microstructure, electrical and mechanical properties of as-prepared ceramics were investigated. The results show that the grain size is reduced obviously when increasing the amount of MgO. Compared with pure porous PZT, T_C of MgO-added PZT ceramics shifts to higher temperature. Moreover, dielectric, ferroelectric and piezoelectric properties show no much degradation. Further, PZT/MgO ceramics possess enhanced mechanical properties compared to pure porous PZT ceramics, the largest increment of the fracture toughness and hardness being 31.3% and 19.8%, respectively. The optimal electrical and mechanical properties are obtained with the addition of less than 0.5 wt% MgO nanoparticles.     

The effect of sintering temperature and time on microwave properties of Sm(Zn1/2Ti1/2)O3 ceramics for resonators

The microwave dielectric properties of Sm(Zn_1/2Ti_1/2)O₃ ceramics have been investigated. Sm(Zn_1/2Ti_1/2)O₃ ceramics were prepared by conventional solid-state route with various sintering temperatures and times. The prepared Sm(Zn_1/2Ti_1/2)O₃ exhibited a mixture of Zn and Ti showing 1:1 order in the B-site. Higher sintered density of 7.01 g/cm³ can be produced at 1310 °C for 2 h. The dielectric constant values (ɛ_r) of 22–31 and the Q × f values of 4700–37,000 (at 8 GHz) can be obtained when the sintering temperatures are in the range of 1250–1370 °C for 2 h. The temperature coefficient of resonant frequency τ_f was a function of sintering temperature. The ɛ_r value of 31, Q  ×  f value of 37,000 (at 8 GHz) and τ_f value of −19 ppm/°C were obtained for Sm(Zn_1/2Ti_1/2)O₃ ceramics sintered at 1310 °C for 2 h. For applications of high selective microwave ceramic resonator, filter and antenna, Sm(Zn_1/2Ti_1/2)O₃ is proposed as a suitable material candidate.     

Low temperature sintering of BaCu(B2O5)-added BaO–Re2O3–TiO2 (Re = Sm,Nd) ceramics

The sintering temperature of BaSm₂Ti₄O₁₂ (BST) and BaNd₂Ti₅O₁₄ (BNT) ceramics was approximately 1350 °C and decreased to 875 °C with the addition of BaCu(B₂O₅) (BCB) ceramic powder. The presence of the liquid phase was responsible for the decrease of the sintering temperature. The liquid phase is considered to have a composition similar to the BaO-deficient BCB. The bulk density and dielectric constant (ɛ_r) of the specimens increased and reached saturated value with increasing BCB content. The Q-value initially increased with the addition of BCB, but decreased considerably when a large amount of BCB was added, because of the presence of the liquid phase. Good microwave dielectric properties of Q × f = 4500 GHz, ɛ_r = 60 and τ_f = −30 ppm/°C were obtained for the 16.0 mol% BCB-added BST ceramics sintered at 875 °C for 2 h. Moreover, the BST and BNT ceramics containing BCB show good compatibility with silver metal.     

Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions

The low sintering temperature and the good dielectric properties such as high dielectric constant (ɛ_r), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τ_f) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba₃Ti₄Nb₄O₂₁ ceramics were investigated as a function of B₂O₃–CuO content. Ba₃Ti₄Nb₄O₂₁ ceramics with B₂O₃ or CuO addition could be sintered above 1100 °C. However, the additions of both B₂O₃ and CuO successfully reduced the sintering temperature of Ba₃Ti₄Nb₄O₂₁ ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba₃Ti₄Nb₄O₂₁ ceramics were examined and discussed in the formation of the secondary phases. The Ba₃Ti₄Nb₄O₂₁ sample with 1 wt% B₂O₃ and 3 wt% CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: ɛ_r = 65, Q × f = 16,000 GHz and τ_f = 101 ppm/°C.     

Microwave dielectric properties of BaxLa4Ti3 + xO12 + 3x (x = 0.0–1.0) ceramics

In the BaO–La₂O₃–TiO₂ system, the Ba_nLa₄Ti_3 + nO_12 + 3n homologous compounds exist on the tie line BaTiO₃–La₄Ti₃O₁₂ besides tungstenbronze-type like Ba_6 − 3xR_8 + 2xTi₁₈O₅₄ (R = rare earth) solid solutions. There are four kinds of compounds in the homologous series: n = 0, La₄Ti₃O₁₂; n = 1, BaLa₄Ti₄O₁₅; n = 2, Ba₂La₄Ti₅O₁₈; n = 4, Ba₄La₄Ti₇O₂₄. These compounds have the layered hexagonal perovskite-like structure, which has a common sub-structure in the crystal structure. These compounds have been investigated in our previous studies. In this study, we have investigated the phase relation and the microwave dielectric properties of Ba_xLa₄Ti_3 + xO_12 + 3x ceramics in the range of x between 0.2 and 1.0. With the increase in x, the dielectric constant ɛ_r locates around 45, the quality factor Q × f shows over 80,000 GHz at x = 0.2 and the minimum value of 30,000 GHz at x = 0.9, and the temperature coefficients of resonant frequency τ_f is improved from −17 to −12 ppm/°C. At x = 0.2, the ceramic composition obtained has dielectric constant ɛ_r = 42, the temperature coefficient of the resonant frequency τ_f  = −17 ppm/°C and a high Q × f of 86,000 GHz.     

Effects of microwave sintering on the properties of 0.87(Mg0.7Zn0.3)TiO3–0.13(Ca0.61La0.26)TiO3 ceramics

0.87(Mg_0.7Zn_0.3)TiO₃–0.13(Ca_0.61La_0.26)TiO₃ (referred to as 87MZCLT) ceramics were prepared by microwave sintering and conventional sintering. The experimental results demonstrated that the sintering cycle of 87MZCLT ceramics was greatly shortened and the impurity phase (Mg_0.7Zn_0.3)Ti₂O₅ was eliminated by microwave sintering. Moreover, the 87MZCLT ceramics prepared by microwave sintering show more uniform, fine-grained microstructure as well as much less Zn evaporation. As a result, the quality factor was increased by 40% compared with conventional sintering. All samples were sintered at 1275 °C for 20 min with heating and cooling rate of 15 °C/min and gave excellent microwave dielectric properties: ?_r = 26.21, Q × f = 120,000 GHz, τ_f = ?3 ppm/°C.     

Phases in La2O3 and NiO doped (Zr,Sn)TiO4 microwave dielectric ceramics

Dielectric ceramics with composition in the ZrO₂–SnO₂–TiO₂ system containing La₂O₃ and NiO as sintering aids were prepared and investigated by XRD, XPS, SEM, EDS, and microwave dielectric measurements. Ceramics prepared with defloculed slurry using a Dyno-Mill^®, and sintered at 1370°C exhibit very good microwave dielectric characteristics: ε=37 and QF up to 62 000 at 4 GHz. We have observed a matrix phase with at least two or three different secondary phases in function of the employed grinding media (balls of zircon or magnesium stabilised zirconia). So, we have synthesised and characterised these phases.     

Effects of WO3 on the microstructure and optical transmittance of PLZT ferroelectric ceramics

The influence of the WO₃ addition as sintering aids on the structural, microstructural and optical properties of (Pb,La)(Zr,Ti)O₃—PLZT based ceramics was investigated. Ferroelectric (Pb_0.9La_0.1)(Zr_0.65Ti_0.35)_0.975O₃ + x wt% WO₃ (x = 0.0, 0.5, 1.5 and 2.0) ceramics were densified by oxygen assisted uniaxial hot pressing. From the XRD results it was found that the hot pressed samples displayed single pseudocubic perovskite phase. EDS analysis evidenced the presence of WO₃ rich phase at the grain boundaries. An inhibition of grain growth and an evolution from transgranular to intergranular fracture behavior was observed, as a consequence of the formation of a PbO–WO₃ liquid phase, as the amount of WO₃ addition was increased. The optical transmittance in the visible and infrared range was decreased due to the presence of the liquid phase in grain boundaries, for WO₃ content lower than 2.0 wt%.     

Phase transitions and microwave dielectric properties of Bi3NbO7 ceramics with Bi4B2O9 addition

The effects of Bi₄B₂O₉ on the phase transitions, sinterability and microwave dielectric properties of Bi₃NbO₇ ceramics were investigated. Densities around 96% theoretical could be achieved at 900 °C for samples with up to 20 wt% Bi₄B₂O₉ addition. Phase transitions of cubic→tetragonal→cubic with the increase of sintering temperature were observed for the samples with Bi₄B₂O₉ addition. Moreover, the Bi₄B₂O₉ addition effectively accelerated the phase transition from cubic Bi₃NbO₇ to tetragonal Bi₃NbO₇. Bi₄B₂O₉ addition and the sintering temperature significantly affected the microwave dielectric properties mainly due to the phase transitions. When 20 wt% Bi₄B₂O₉ was added, a dense ceramic could be sintered at 900 °C with relative permittivity ε_r=79, microwave quality factor Qf₀=1010 GHz, and temperature coefficient of resonance frequency τ_f=+8 ppm/°C, which makes it a promising candidate for LTCC applications.     

The effect of cation ordering and domain boundaries on low loss Ba(BI1/3BII2/3)O3 perovskite dielectrics revealed by high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM)

High quality ceramics of Ba((Co_0.7Zn_0.3)_1/3Nb_2/3)O₃ (BCZN), Ba(Mg_1/3Nb_2/3)O₃ (BMN) and Ba(Mg_1/3Ta_2/3)O₃ (BMT) were prepared by the mixed oxide route using sintering temperatures up to 1620 °C. Products with a high degree of cation ordering exhibited dielectric Q × f values from 83,000 GHz (BCZN) to 360,000 GHz (BMT). High Resolution TEM and aberration-corrected scanning transmission electron microscopy (STEM) revealed ordering domains and type I, II and III boundary structures. High-Angle Angular Dark Field (HAADF) STEM images provided direct evidence of 1:2 ordering and stacking sequences, and the presence of disordered regions within domain boundaries. The exceptionally high Q × f values for BMT are associated with a high degree of B-site ordering and the removal of domain boundaries in large, single domain grains. The catastrophic degradation of Q × f values in BMN after prolonged sintering is associated with formation of a lossy ferroelectric secondary phase (Ba₃Nb₂O₈), and changes to composition and stoichiometry of BMN grains.