ZnO纳米棒与Si(111)和Si(100)衬底的外延关系(英文)

运用热蒸发技术在Si(111)和Si(100)基片上制备了ZnO纳米棒。SEM表征显示,ZnO纳米棒的直径约100nm,长度均匀,大约3μm;XRD表征发现ZnO纳米棒沿[0001]晶向择优生长。通过实验结果与理论分析得出:对于Si(111)基片上的样品,大部分ZnO纳米棒沿6个对称方向生长,而且与基片之间的夹角为54.7°,ZnO与Si(111)的外延关系为[0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[141]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[411]Si,或[0001]ZnO‖[4]Si。对于Si(100)基片上的样品,大部分ZnO纳米棒沿4个对称方向生长,与基片之间的夹角为70.5°,其外延关系为[0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[14]Si,或[0001]ZnO‖[14]Si。通过比较分析得出Si基片可以控制ZnO纳米棒的生长方向。     

确定ZnO颗粒生长方向的电子背散射衍射方法

发展了利用扫描电子显微镜(SEM)与电子背散射衍射系统(EBSD)对微晶颗粒空间取向进行表征的新方法,对以气相氧化方法制备的纳米晶ZnO颗粒的生长方向进行了测量.在样品台两个不同的倾转角度下采集两幅ZnO颗粒图像,对这两幅图做图像分析,测量各枝晶臂在样品台不同倾转角时的投影角度,可以确定ZnO颗粒枝晶臂的生长方向在样品台坐标系中的空间取向,并获得各枝晶臂的长度和夹角.由EBSD确定ZnO颗粒对应的枝晶臂晶格坐标与样品台坐标之间的空间几何关系.并根据坐标变换关系可确定枝晶臂空间生长方向的晶体学取向是沿[0001]方向.     

ZnO纳米棒中结的透射电镜研究

本文采用化学气相沉积法制得大量ZnO纳米棒,利用会聚束电子衍射(CBED)研究了纳米棒的生长方向,验证了纳米棒在生长过程中产生碰撞.通过TEM研究发现,纳米棒沿c轴生长,碰撞形成的晶界并不是一个随机取向的大角晶界,为了降低能量,晶界具有孪晶关系.晶界的存在导致晶体产生缺陷生长,使纳米棒的结的附近区域长粗.     

蓝宝石上氧化锌薄膜的取向

用X线衍射法研究了薄膜和基片的取向关系,即用气相法生长的氧化锌薄膜与(0001),(11(?)0)和((?)012)取向的蓝宝石基片的取向关系.发现在(0001)取向的蓝宝石基片上总有三种不同的晶体取向,即(0001),(10(?)0)和(11(?)4)平行于基片表面.用别尔格-巴尔列特的X线形貌法和X线衍射法(用屏蔽)查明:(00O1)和(11(?)4)区沿基片表面分开,而(10(?)1)和(11(?)4)区按薄膜厚度分开.表明:在基础取向的蓝宝石基片上利用亚硫酸锌薄的中间层能得到单一取向(0001)氧化锌薄膜.从与氧化锌和蓝宝石的结合面有关的晶体学观点来讨论结果.     

Fe离子注入α-Al_2O_3单晶注入态和还原气氛退火态的微观结构

本文利用透射电子显微术,研究了注入Fe离子的α-Al2O3单晶(sapphire)在还原气氛退火过程中微观结构的变化.研究表明,在还原气氛退火过程中,先前注入的Fe离子析出为α-Fe纳米颗粒.一些α-Fe颗粒周围存在空洞,而一些大的α-Fe颗粒呈现出多面体的轮廓.大部分a-Fe析出相与α-Al2Q3基体具有如下取向关系:(111)α-Fe//(0001)sapphire,[110]α-Fe//[1120]sapphire.只有很少的α-Fe析出相偏离该取向关系,而最大的偏离角小于3°.近重位倒易点阵分析表明:在α-Fe和α-Al2O3体系中,该取向关系是最有利的;而在该体系中发现的另一取向关系(110)α-Fe//(0001)sapphire及<111>α-Fe//<5140>sapphire是次有利取向关系.     

ZnO薄膜和量子阱的生长及光学特性

研究了用MOCVD法在蓝宝石(Al2O3)(0001)和(1120)衬底上制备ZnO薄膜时的生长特性.详细研究了采用Al2O3(0001)衬底时生长温度与压力的影响.由于存在比较大的晶格失配,一般容易得到ZnO纳米结晶,不容易获得既平坦且质量又好的ZnO薄膜.生长温度对薄膜-衬底界面的生长模式有很大的影响;而生长压力对ZnO纳米结晶的形状有决定性作用.通过适当控制生长温度及压力,可以得到ZnO薄膜或不同形状的纳米结构.当采用Al2O3(1120)衬底时,由于晶格失配较小,能保持平坦层状生长,临界膜厚远远大于采用Al2O3(0001)衬底的结果.在Al2O3(1120)衬底上制作了ZnO/MgZnO量子阱并研究了其光学特性.观察到了量子化能级间以及在载流子间的跃迁引起的发光.由压电效应引起的内建电场约为3×105V/cm.同时发现采用低温低压生长可以增大ZnO中受主杂质浓度,有利于获得p型ZnO.     

Growth and Optical Properties of ZnO Films and Quantum Wells

研究了用MOCVD法在蓝宝石(Al2O3)(0001)和(1120)衬底上制备ZnO薄膜时的生长特性.详细研究了采用Al2O3(0001)衬底时生长温度与压力的影响.由于存在比较大的晶格失配,一般容易得到ZnO纳米结晶,不容易获得既平坦且质量又好的ZnO薄膜.生长温度对薄膜-衬底界面的生长模式有很大的影响;而生长压力对ZnO纳米结晶的形状有决定性作用.通过适当控制生长温度及压力,可以得到ZnO薄膜或不同形状的纳米结构.当采用Al2O3(1120)衬底时,由于晶格失配较小,能保持平坦层状生长,临界膜厚远远大于采用Al2O3(0001)衬底的结果.在Al2O3(1120)衬底上制作了ZnO/MgZnO量子阱并研究了其光学特性.观察到了量子化能级间以及在载流子间的跃迁引起的发光.由压电效应引起的内建电场约为3×105V/cm.同时发现采用低温低压生长可以增大ZnO中受主杂质浓度,有利于获得p型ZnO.     

Zn/ZnO纳米电缆的制备及电子显微分析

利用X射线衍射仪(XRD)、X射线能谱仪(EDS)、扫描电子显微镜(SEM)以及透射电子显微镜(TEM)等实验手段对热蒸发ZnO粉末产物的形貌、组成成分、两种相的取向关系以及微观结构进行了表征。结果表明：实验所得到的制备产物由Zn／ZnO纳米电缆组成,电缆的直径在50-200nm之间而长度可达几百微米。电缆由单质Zn组成的芯和由ZnO组成的外壳组成。两相具有两种比较固定的取向关系[11 2^-0]zn／／[11 2^-0]ZnO。和[0001]Zn／／[0001]ZnO。     

掺杂浓度对Co掺杂ZnO纳米棒的铁磁性的影响

采用化学气相沉积(CVD)方法制备出3种掺杂浓度的Co掺杂ZnO纳米棒。使用EDX(en-ergy dispersive X-ray)能谱,测得3种ZnO纳米棒中Co元素的掺杂浓度分别为0.4、1.4和2.4%。X射线衍射(XRD)分析表明,三个样品均为ZnO的六方铅锌矿结构,并沿着c轴取向择优生长。磁化曲线显示,掺杂浓度为0.4%的Co掺杂ZnO纳米棒为顺磁性,随着掺杂浓度的增大,Co掺杂ZnO纳米棒转变为铁磁性。扩展X射线吸收精细结构谱表明,Co掺杂ZnO纳米棒的铁磁性源于ZnO纳米棒中的Co金属团簇。     

两步法生长ZnO纳米棒的结构及其发光特性

应用两步法在玻璃衬底上制备了高度取向的ZnO纳米棒,并研究了衬底和反应时间等参数对其结构及发光特性的影响。从样品的扫描电镜(SEM)图中发现,利用脉冲激光沉积(PLD)方法在玻璃衬底上生长一层ZnO薄膜作为修饰层,可以明显提高水热法生长的ZnO纳米棒的结晶质量。样品的SEM和光致发光(PL)谱表明,在有ZnO修饰层的玻璃衬底上生长的ZnO纳米棒分布均匀,排列致密,取向性好;缺陷发光的发光强度约是激子发光峰的2倍,且随着反应时间增长,样品的缺陷发光增强而激子发光减弱。     

Zinc Oxide Nanorods Grown by Arc Discharge

The arc discharge method was employed to fabricate zinc oxide (ZnO) nanorods with wurtzite structure. The microstructure analysis by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated that the ZnO nanorods grew along the [0001] direction. On average, the diameter and length of the nanorods were about 40 nm (some are as thin as 5 nm) and several hundred nanometers, respectively. The photoluminescence (PL) of the nanorods showed an ultraviolet band, a violet band, and a green band. The PL mechanism was discussed with the growth process and Raman spectroscopy.     

Hydrothermal Growth: Polymer‐Templated Hydrothermal Growth of Vertically Aligned Single‐Crystal ZnO Nanorods and Morphological Transformations Using Structural Polarity (Adv. Funct. Mater. 18/2010)

Position‐configurable, vertical, single‐crystalline ZnO nanorod arrays are fabricated via a polymer‐templated hydrothermal growth method at a low temperature of 93 °C. A sol‐gel processed dense c‐oriented ZnO seed layer film is employed to grow nanorods along the c‐axis direction [0001] regardless of any substrate crystal mismatches. Here, one‐beam laser‐interference lithography is utilized to fabricate nanoscale holes over an entire 2‐in. wafer during the preparation of the polymer template. As such, vertically aligned ZnO nanorods can be grown from the seed layer exposed at the bottom of each hole. Furthermore, morphological transformations of the ZnO nanorods into pencil‐like, needle‐like, tubular, tree‐like, and spherical shapes are obtained by controlling the growth conditions and utilizing the structural polarity of the ZnO nanorods.     

Polymer‐Templated Hydrothermal Growth of Vertically Aligned Single‐Crystal ZnO Nanorods and Morphological Transformations Using Structural Polarity

Position‐configurable, vertical, single‐crystalline ZnO nanorod arrays are fabricated via a polymer‐templated hydrothermal growth method at a low temperature of 93 °C. A sol‐gel processed dense c‐oriented ZnO seed layer film is employed to grow nanorods along the c‐axis direction [0001] regardless of any substrate crystal mismatches. Here, one‐beam laser‐interference lithography is utilized to fabricate nanoscale holes over an entire 2‐in. wafer during the preparation of the polymer template. As such, vertically aligned ZnO nanorods can be grown from the seed layer exposed at the bottom of each hole. Furthermore, morphological transformations of the ZnO nanorods into pencil‐like, needle‐like, tubular, tree‐like, and spherical shapes are obtained by controlling the growth conditions and utilizing the structural polarity of the ZnO nanorods.     

ZnO量子点的电子束辐照生长

在直径约40 nm六方纤锌矿结构的ZnO纳米棒的（1010）晶面上,通过电子束辐照生长粒度为5 nm左右ZnO量子点。量子点表面为（1010）、（0001）和（0001）三个晶面构成。通过控制电子束能流密度和氧分压实现控制ZnO量子点生长。     

Si(100)衬底对ZnO纳米线阵列生长方向的控制作用

采用热分解ZnO粉末法,以Au为催化剂,在Si(100)衬底上外延生长了ZnO纳米线阵列。用扫描电子显微镜(SEM)分析表明:ZnO纳米线的直径在100nm左右,长度约3μm,与衬底表面的夹角约为70.5°,纳米线具有四个特定的倾斜方向A,B,C,D。X射线衍射(XRD)图谱上只有ZnO(0002)衍射峰,说明ZnO纳米线沿C轴择优生长。结合Si与ZnO的晶格结构特征,理论研究得出ZnO纳米线与Si基片的晶格匹配关系为:[0001]_(ZnO)∥[114]_(Si),[0001]_(ZnO)∥[■■4]_(Si),[0001]_(ZnO)∥[1■4]_(Si),[0001]_(ZnO)∥[■14]_(Si),失配度为1.54%。得出了Si(100)衬底对ZnO纳米线生长方向具有控制作用的结论。     

Heteroepitaxial growth of thick α-Ga_2O_3 film on sapphire(0001)by MIST-CVD technique

The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-halfmaximum(FWHM) of rocking curves for the(0006) and(10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm-2, respectively, indicative of high single crystallinity. The out-ofplane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively.The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors.     

Preparation and optical property of porous ZnO nanobelts

Porous ZnO nanobelts self-assembled by nanoparticles were fabricated via a two-step process. First, the precursors were prepared via a simple, rapid, controllable solution route. Then, ligand molecules and water molecules can be removed from the precursors during calcinations in air, as a result, porous ZnO nanobelts are formed. In the edge of the nanobelts and the narrow nanobelts, ZnO nanoparticles align wall growth along [0001] directions were observed. In the middle of the wide belts, some nanoporous wall grows along [10−10] and [2−1−10]. The growth mechanism is discussed in detail from beltlike precursor to ZnO nanobelts. The porous ZnO nanobelts exhibit a strong UV emission.     

Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001)

We report the epitaxial growth and properties of ZnO-Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001) substrates fabricated by using the pulsed laser deposition (PLD) technique. Heteroepitaxial growth of these structures was accomplished by using domain-matching epitaxy. The heterostructures were characterized using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), optical transmittance, photoluminescence, and electrical resistivity measurements. XRD and HRTEM experiments revealed the epitaxial nature of these structures, with orientation relationship between ZnO and Pt, as [0001]_ZnO∥[111]_Pt and [ 110]_ZnO∥[011]_Pt, which is equivalent to no rotation between ZnO and Pt. For Pt epitaxy on (0001) sapphire, the epitaxial relationship was determined to be [001]_Pt∥[0001]_Sap and [110]_Pt∥[01 0]_Sap, which is equivalent to a 30° rotation in the basal plane. Electrical and optical measurements showed that these heterostructures exhibit very high electrical conductivity and at the same time possess interesting optical transmittance spectra and exhibit room temperature photoluminescence characteristics.     

Electron energy-loss spectroscopy study of ZnO nanobelts

Nanobelts of ZnO have well-defined shapes that are enclosed by {0001}, {0110} and {2110} facets. The nanobelts grow along [0110] and [2110] with large flat surfaces of +/-(0001) and +/-(0110), respectively. Electron energy-loss spectroscopy has been applied to study the electronic structure of ZnO nanobelts of different growth orientations. A plasmon peak observed at 13 eV is suggested to be the result of polar surface excitation. The energy-loss near-edge structure of the oxygen K and zinc L3 edges acquired from the two types of nanobelts show clear orientation dependence, and they agree well to the calculated results.