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1.
C. A. Musca J. Antoszewski J. M. Dell L. Faraone S. Terterian 《Journal of Electronic Materials》2003,32(7):622-626
Planar p-on-n HgCdTe heterojunction photodiodes have been fabricated using a plasma-induced type conversion process for device
junction isolation. The technique is presented as a fully planar alternative technology to the commonly used mesa isolation
structure. The starting material consisted of an indium-doped n-type mid-wavelength infrared (MWIR) HgCdTe absorbing layer
that was capped by a 1-μm-thick wider bandgap arsenic-doped p-type layer. Junction-isolated p-on-n diodes were formed by selectively
p-to-n type converting the p-type cap layer using a plasma process. Photodiode dark current-voltage measurements were performed
as a function of temperature, along with noise and responsivity. The devices have cut-off wavelengths between 4.8 μm and 5.0
μm, exhibit diffusion-limited dark currents down to 145 K, give R0A values greater than 1 × 107Ω·cm2 at 80 K and greater than 1 × 105Ω·cm2 at 120 K, and have negligible 1/f noise current at zero applied bias. 相似文献
2.
Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays 总被引:2,自引:0,他引:2
P. Ferret J. P. Zanatta R. Hamelin S. Cremer A. Million M. Wolny G. Destefanis 《Journal of Electronic Materials》2000,29(6):641-647
This paper presents recent developments that have been made in Leti Infrared Laboratory in the field of molecular beam epitaxy
(MBE) growth and fabrication of medium wavelength and long wavelength infrared (MWIR and LWIR) HgCdTe devices. The techniques
that lead to growth temperature and flux control are presented. Run to run composition reproducibility is investigated on
runs of more than 15 consecutively grown layers. Etch pit density in the low 105 cm−2 and void density lower than 103 cm−2 are obtained routinely on CdZnTe substrates. The samples exhibit low n-type carrier concentration in the 1014 to 1015 cm−3 range and mobility in excess of 105 cm2/Vs at 77 K for epilayers with 9.5 μm cut-off wavelength. LWIR diodes, fabricated with an-on-p homojunction process present
dynamic resistance area products which reach values of 8 103 Ωcm2 for a biased voltage of −50 mV and a cutoff wavelength of 9.5 μm at 77 K. A 320 × 240 plane array with a 30 μm pitch operating
at 77 K in the MWIR range has been developed using HgCdTe and CdTe layers MBE grown on a Germanium substrate. Mean NEDT value
of 8.8 mK together with an operability of 99.94% is obtained. We fabricated MWIR two-color detectors by the superposition
of layers of HgCdTe with different compositions and a mixed MESA and planar technology. These detectors are spatially coherent
and can be independently addressed. Current voltage curves of 60 × 60 μm2 photodiodes have breakdown voltage exceeding 800 mV for each diode. The cutoff wavelength at 77 K is 3.1 μm for the MWIR-1
and 5 μm for the MWIR-2. 相似文献
3.
Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance 总被引:1,自引:0,他引:1
M. Carmody J. G. Pasko D. Edwall R. Bailey J. Arias S. Cabelli J. Bajaj L. A. Almeida J. H. Dinan M. Groenert A. J. Stoltz Y. Chen G. Brill N. K. Dhar 《Journal of Electronic Materials》2005,34(6):832-838
The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications
is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon
substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical
challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for
LWIR HgCdTe detectors where the performance can be limited by the high (∼5×106 cm−2) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared
(LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe
and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s planar diode architecture. The diode
and FPA and results at 78 K will be discussed in terms of the high dislocation density (∼5×106 cm2) typically measured when HgCdTe is grown on silicon substrates. 相似文献
4.
R. Pal P. K. Chaudhury B. L. Sharma V. Kumar C. Musca J. M. Dell L. Faraone 《Journal of Electronic Materials》2004,33(2):141-145
Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE).
Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping
of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R0Aj) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current
are studied to identify the bulk and surface current components. Maximum R0Aj=2×107 Θcm2 was achieved in CdTe-passivated, 200×200 μm2 diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology. 相似文献
5.
Majid Zandian D. Scott J. Garnett D. D. Edwall J. Pasko M. Farris M. Daraselia J. M. Arias J. Bajaj D. N. B. Hall S. Jacobson G. Luppino S. Parker 《Journal of Electronic Materials》2005,34(6):891-897
Growth of Hg1−xCdxTe by molecular beam epitaxy (MBE) has been under development since the early 1980s at Rockwell Scientific Company (RSC),
formerly the Rockwell Science Center; and we have shown that high-performance and highly reproducible MBE HgCdTe double heterostructure
planar p-on-n devices can be produced with high throughput for various single- and multiplecolor infrared applications. In
this paper, we present data on Hg1−xCdxTe epitaxial layers grown in a ten-inch production MBE system. For growth of HgCdTe, standard effusion cells containing CdTe
and Te were used, in addition to a Hg source. The system is equipped with reflection high energy electron diffraction (RHEED)
and spectral ellipsometry in addition to other fully automated electrical and optical monitoring systems. The HgCdTe heterostructures
grown in our large ten-inch Riber 49 MBE system have outstanding structural characteristics with etch-pit densities (EPDs)
in the low 104 cm−2 range, Hall carrier concentration in low 1014 cm−3, and void density <1000 cm2. The epilayers were grown on near lattice-matched (211)B Cd0.96Zn0.04Te substrates. High-performance mid wavelength infrared (MWIR) devices were fabricated with R0A values of 7.2×106 Ω-cm2 at 110 K, and the quantum efficiency without an antireflection coating was 71.5% for cutoff wavelength of 5.21 μm at 37 K.
For short wavelength infrared (SWIR) devices, an R0A value of 9.4×105 Ω-cm2 at 200 K was obtained and quantum efficiency without an antireflection coating was 64% for cutoff wavelength of 2.61 μm at
37 K. These R0A values are comparable to our trend line values in this temperature range. 相似文献
6.
The model of monocrystalline silicon solar cells is established,and the effects of wafer parameters,such as the p-Si(100) substrate thickness,the defect density,and the doping concentration,on the electronic properties of monocrystalline silicon solar cells are analyzed.The results indicate that the solar cells with an Al back-surface-field will have good electronic properties when the wafers meet the following three conditions:(i) the defect density is less than 1.0×1011 cm^-3;(ii) the doping concentration is from 5×10^15 cm^-3 to 1×10^17 cm^-3,i.e.the bulk resistivity is from 0.5 Ω·cm to 10 Ω·cm;(iii) the cells substrate thickness is in the range of 100 μm to 200 μm. 相似文献
7.
Heinrich Figgemeier Martin Bruder Karl-Martin Mahlein Richard Wollrab Johann Ziegler 《Journal of Electronic Materials》2003,32(7):588-591
HgCdTe detector performance and yield are strongly dependant on CdZnTe substrate and HgCdTe epilayer properties, and on key
device processes, especially for 8–12 μm application. Due to the correlation and optimization between these figures and diode
performance, AIM has developed a mature HgCdTe technology for superior detector performance and high production rate. To meet
high yield and performance for long wavelength (LW) HgCdTe diodes, dislocation densities of < 1 × 10t cm−2 both in substrate and epilayer have to be ensured. By a unique AIM substrate growth process, dislocation densities of 2 ×
104-9 × 104 cm−2 are achieved for all substrates and epilayers (100% yield). The etch pit density (EPD) on 〈111〉 epilayers is revealed by
an AIM proprietary etching procedure. One critical effect is the dislocations in the diode area, which can originate from
the substrate and epilayer growth and the subsequent device processes, respectively. Our studies have shown that device processes
can cause additional dislocations in the diode area.
Diode yield was clearly improved by a combination of wet and dry etching for diode contact etching. 相似文献
8.
Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes 总被引:1,自引:0,他引:1
Siddhartha Ghosh Shubhrangshu Mallick Koushik Banerjee Christoph Grein Silviu Velicu Jun Zhao Don Silversmith Jean Baptist Rodriguez Elena Plis Sanjay Krishna 《Journal of Electronic Materials》2008,37(12):1764-1769
Mid-wavelength infrared (MWIR) p
+–n
−–n
+ avalanche photodiodes (APDs) were fabricated using two materials systems, one with mercury cadmium telluride (HgCdTe) on
a silicon (Si) substrate and the other with an indium arsenide/gallium antimonide (InAs/GaSb) strained layer superlattice
(SLS). Diode characteristics, avalanche characteristics, and excess noise factors were measured for both sets of devices.
Maximum zero-bias resistance times active area (R
0
A) of 3 × 106 Ω cm2 and 1.1 × 106 Ω cm2 and maximum multiplication gains of 1250 at −10 V and 1800 at −20 V were measured for the HgCdTe and the SLS, respectively,
at 77 K. Gains reduce to 200 in either case at 120 K. Excess noise factors were almost constant with increasing gain and were
measured in the range of 1 to 1.2. 相似文献
9.
Pressure and pressureless electrical contacts were evaluated by measuring the contact electrical resistivity between copper
mating surfaces. Pressure electrical contacts with a contact resistivity of 2×10−5 Ω·cm2 have been attained using a carbon black paste of a thickness of less than 25 μm as the interface material. In contrast, a
pressureless contact with silver paint as the interface material exhibits a higher resistivity of 3×10−5 Ω·cm2 or above. A pressureless contact with colloidal graphite as the interface material exhibits the same high contact resistivity
(1×10−4 Ω·cm2) as a pressure contact without any interface material. On the other hand, pressureless contacts involving solder and silver
epoxy exhibit lower contact resistivity than carbon black pressure contacts. 相似文献
10.
Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications 总被引:2,自引:0,他引:2
D. B. Janes Takhee Lee Jia Liu M. Batistuta Nien-Po Chen B. L. Walsh R. P. Andres E. -H. Chen M. R. Melloch J. M. Woodall R. Reifenberger 《Journal of Electronic Materials》2000,29(5):565-569
We report a fabrication approach in which we combine self-assembled metal/molecule nanostructures with chemically stable semiconductor
surface layers. The resulting structures have well controlled dimensions and geometries (∼4 nm Au nanoclusters) provided by
the chemical self-assembly and have stable, low-resistance interfaces realized by the chemically stable semiconductor cap
layer (low-temperature grown GaAs passivated by the organic tether molecules). Scanning tunneling microscope imaging and current-voltage
spectroscopy of nanocontacts ton-GaAs fabricated using this approach indicate high quality, ohmic nanocontacts having a specific
contact resistance of ∼1 × 10−7Ω·cm2 and a maximum current density of ∼1×107 A/cm2, both comparable to those observed in large area contacts. Uniform 2-D arrays of these nanocontact structures have been fabricated
and characterized as potential cells for nanoelectronic device applications. 相似文献
11.
S. P. Tobin M. H. Weiler M. A. Hutchins T. Parodos P. W. Norton 《Journal of Electronic Materials》1999,28(6):596-602
With good composition control in both p-type cap and n-type base LPE layers, it is possible to make barrier-free two-layer
P-on-n HgCdTe heterojunction photodiodes with very long cutoff wavelengths. Diode arrays with good RoA operability, good quantum efficiency, and low 1/f noise at 60K have been demonstrated at cutoff wavelengths to 16.3μm. The
diode performance continues to improve at lower temperatures, following a diffusion-current trend to at least 35K. Measured
RoA values of 2×105 ohm-cm2 for an 18 μm cutoff at 35K are the highest reported at this very long wavelength. A simple defect model applied to the area
dependence of RoA at 40K implied a defect areal density of 3×104 cm−2 and a defect impedance of 3×106 ohm. 相似文献
12.
Mg- and Si-doped GaN and AlGaN films were grown by metalorganic chemical vapor deposition and characterized by room-temperature
photoluminescence and Hall-effect measurements. We show that the p-type carrier concentration resulting from Mg incorporation
in GaN:Mg films exhibits a nonlinear dependence both on growth temperature and growth pressure. For GaN and AlGaN, n-type
doping due to Si incorporation was found to be a linear function of the silane molar flow. Mg-doped GaN layers with 300K hole
concentrations p ∼2×1018 cm−3 and Si-doped GaN films with electron concentrations n∼1×1019 cm−3 have been grown. N-type Al0.10Ga0.90N:Si films with resistivities as low as p ∼6.6×10−3 Ω-cm have been measured. 相似文献
13.
M. Reddy J. M. Peterson S. M. Johnson T. Vang J. A. Franklin E. A. Patten W. A. Radford J. W. Bangs D. D. Lofgreen 《Journal of Electronic Materials》2009,38(8):1764-1770
This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates
at Raytheon Vision Systems. We report a very high-quality HgCdTe growth, for the first time, on an 8 cm × 8 cm CdZnTe substrate.
This paper also describes the excellent HgCdTe growth repeatability on multiple 7 cm × 7 cm CdZnTe substrates. In order to
study the percentage wafer area yield and its consistency from run to run, small lots of dual-band long-wave infrared/long-wave
infrared triple-layer heterojunction (TLHJ) layers on 5 cm × 5 cm CdZnTe substrates and single-color double-layer heterojunction
(DLHJ) layers on 6-inch Si substrates were grown and tested for cutoff wavelength uniformity and micro- and macrovoid defect
density and uniformity. The results show that the entire lot of 12 DLHJ-HgCdTe layers on 6-inch Si wafers meet the testing
criterion of cutoff wavelength within the range 4.76 ± 0.1 μm at 130 K and micro- and macrovoid defect density of ≤50 cm−2 and 5 cm−2, respectively. Likewise, five out of six dual-band TLHJ-HgCdTe layers on 5 cm × 5 cm CdZnTe substrates meet the testing criterion
of cutoff wavelength within the range 6.3 ± 0.1 μm at 300 K and micro- and macrovoid defect density of ≤2000 cm−2 and 500 cm−2, respectively, on the entire wafer area. Overall we have found that scaling our HgCdTe MBE process to a 10-inch MBE system
has provided significant benefits in terms of both wafer uniformity and quality. 相似文献
14.
Heavily compensated GaSb (2-in.-diameter substrates) with resistivity as high as 7 × 103 Ω-cm, corresponding to a net donor concentration of 3.5×1013 cm−3 at 77 K, and 16.4 Ω-cm, corresponding to net donor concentration of 1.16×1016 cm−3 at 300 K, have been obtained by tellurium (Te) compensation in vertical-Bridgman-grown bulk crystals. Very interesting p-
to n-type as well as n- to p-type changes have been observed as a function of temperature in these samples. 相似文献
15.
R. Korenstein P. H. Hallock D. L. Lee E. Sullivan R. W. Gedridge K. T. Higa 《Journal of Electronic Materials》1993,22(8):853-857
A new indium source, triisopropylindium, was used to dope HgCdTe layers grown by metalorganic chemical vapor deposition n-type
with carrier concentrations, nH, in the range between low 1015 and low 1017 cm−3 at 77K. The reproducibility of carrier concentration was found to be excellent for nH<3×1015 cm−3. High electron mobilities and minority carrier lifetime comparable to published values indicate that indium doping produces
high quality n-type HgCdTe material. State-of the-art photodiodes were obtained by growing a p-type HgCdTe layer by liquid
phase epitaxy on an indium doped layer. In addition, and adduct compound formed between diisopropyltellurium (DIPTe) and triisopropylindium
(TIPIn): DIPTe·InTIP, was also found to be a viable n-type dopant for HgCdTe especially at concentrations in the low 1015 cm−3 or less. 相似文献
16.
T. S. Lee J. Garland C. H. Grein M. Sumstine A. Jandeska Y. Selamet S. Sivananthan 《Journal of Electronic Materials》2000,29(6):869-872
The behavior of arsenic for p-type doping of MBE HgCdTe layers has been studied for various annealing temperatures and arsenic
doping concentrations. We have demonstrated that arsenic is in-situ incorporated into HgCdTe layers during MBE growth. The
carrier concentration has been measured by the Van der Pauw technique, and the total arsenic concentration has been determined
by secondary ion mass spectroscopy. After annealing at 250°C under an Hg over pressure, As-doped HgCdTe layers show highly
compensated n-type properties and the carrier concentration is approximately constant (∼mid 1015 cm−3) until the total arsenic concentration in the HgCdTe layers approach mid 1017 cm−3. The source of n-type behavior does not appear to be associated with arsenic dopants, such as arsenic atoms occupying Hg
vacancy sites, but rather unidentified structural defects acting as donors. When the total arsenic concentration is above
mid 1017 cm−3, the carrier concentration shows a dependence on the arsenic concentration while remaining n-type. We conjecture that the
increase in n-type behavior may be due to donor arsenic tetramers or donor tetramer clusters. Above a total arsenic concentration
of 1∼2×1018 cm−3, after annealing at 300°C, the arsenic acceptor activation ratio rapidly decreases below 100% with increasing arsenic concentration
and is smaller than that after annealing at 450°C. The electrically inactive arsenic is inferred to be in the form of neutral
arsenic tetramer clusters incorporated during the MBE growth. Annealing at 450°C appears to supply enough thermal energy to
break some of the bonds of neutral arsenic tetramer clusters so that the separated arsenic atoms could occupy Te sites and
behave as acceptors. However, the number of arsenic atoms on Te sites is saturated at ∼2×1018 cm−3, possibly due to a limitation of its solid solubility in HgCdTe. 相似文献
17.
S. M. Johnson J. A. Vigil J. B. James C. A. Cockrum W. H. Konkel M. H. Kalisher R. F. Risser T. Tung W. J. Hamilton W. L. Ahlgren J. M. Myrosznyk 《Journal of Electronic Materials》1993,22(8):835-842
Large-area HgCdTe 480×640 thermal-expansion-matched hybrid focal plane arrays were achieved by substituting metalorganic chemical
vapor deposition (MOCVD)-grown CdZnTe/GaAs/Si alternative substrate in place of bulk CdZnTe substrates for the growth of HgCdTe
p-on-n double-layer heterojunctions by controllably-doped mercury-melt liquid phase epitaxy (LPE). (100) CdZnTe was grown
by MOCVD on GaAs/Si using a vertical-flow high-speed rotating disk reactor which incorporates up to three two-inch diameter
substrates. Layers having specular surface morphology, good crystalline structure, and surface macro defect densities <50
cm−2 are routinely achieved and both the composition uniformity and run-to-run reproducibility were very good. As the composition
of the CdZnTe layers increases, the x-ray full width at half maximum (FWHM) increases; this is a characteristic of CdZnTe
grown by VPE techniques and is apparently associated with phase separation. Despite a broader x-ray FWHM for the fernary CdZnTe,
the FWHM of HgCdTe grown by LPE on these substrates decreases, particularly for [ZnTe] compositions near the lattice matching
condition to HgCdTe. An additional benefit of the ternary CdZnTe is an improved surface morphology of the HgCdTe layers. Using
these silicon-based substrates, we have demonstrated 78K high-performance LWIR HgCdTe 480×640 arrays and find that their performance
is comparable to similar arrays fabricated on bulk CdZnTe substrates for temperatures exceeding approximately 78K. The performance
at lower temperatures is apparently limited by the dislocation density which is typically in the low-mid 106 cm−2 range for these heteroepitaxial materials. 相似文献
18.
Hojin Ryu Jinmo Kang Younggun Han Donghwan Kim James Jungho Pak Won-Kyu Park Myoung-Su Yang 《Journal of Electronic Materials》2003,32(9):919-924
Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce
the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (TFT-LCD) to reduce
the number of fabrication steps. With In and Sn layers, contact-resistance values of 5 × 10−3−4×10−3 Ωcm2 were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3×10−5−4 × 10−4 Ωcm2) but lower than the values obtained from ITO/Si contacts (about 1×10−2 Ωcm2). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier. 相似文献
19.
A. I. D’Souza J. Bajaj R. E. De Wames D. D. Edwall P. S. Wijewarnasuriya N. Nayar 《Journal of Electronic Materials》1998,27(6):727-732
Mid wavelength infrared p-on-n double layer planar heterostructure (DLPH) photodiodes have been fabricated in HgCdTe double
layers grown in situ by liquid phase epitaxy (LPE), on CdZnTe and for the first time on CdTe/sapphire (PACE-1). Characterization of these devices
shed light on the nature of the material limits on device performance for devices performing near theoretical limits. LPE
double layers on CdZnTe and on PACE-1 substrates were grown in a horizontal slider furnace. All the photodiodes are p-on-n
heterostructures with indium as the n-type dopant and arsenic the p-type dopant. Incorporation of arsenic is via implantation
followed by an annealing step that was the same for all the devices fabricated. The devices are passivated with MBE CdTe.
Photodiodes have been characterized as a function of temperature. R0Aimp values obtained between 300 and 78K are comparable for the two substrates and are approximately a factor of five below theoretical
values calculated from measured material parameters. The data, for the PACE-1 substrate, indicates diffusion limited performance
down to 110K. Area dependence gives further indications as to the origin of diffusion currents. Comparable R0Aimp for various diode sizes indicates a p-side origin. R0A and optical characteristics for the photodiodes grown on lattice-matched CdZnTe substrates and lattice mismatched PACE-1
are comparable. Howover, differences were observed in the noise characteristics of the photodiodes. Noise was measured on
50 × 50 μm devices held under a 100 mV reverse bias. At 110K, noise spectrum for devices from the two substrates is in the
low 10−15 A/Hz1/2 range. This value reflects the Johnson noise of the room temperature 1010 Ω feedback resistor in the current amplifier that limits the minimum measurable noise. Noise at 1 Hz, −100 mV and 120K for
the 4.95 μm PACE-1 devices is in the 1–2 × 10−14 A/Hz1/2, a factor of 5–10 lower than previously grown typical PACE-1 n+-on-p layers. Noise at 120K for the 4.60 μm PACE-1 and LPE on CdZnTe was again below the measurement technique limit. Greatest
distinction in the noise characteristics for the different substrates was observed at 163K. No excess low frequency noise
was observed for devices fabricated on layers grown by LPE on lattice-matched CdZnTe substrates. Photodiode noise measured
at 1Hz, −100 mV and 163K in the 4.60 μm PACE-1 layer is in the 1–2×10−13 A/Hz1/2, again a factor of 5–10 lower than previously grown PACE-1 n+-on-p layers. More variation in noise (4×10−13−2×10−12 A/Hz1/2) was observed for devices in the 4.95 μm PACE-1 layer. DLPH devices fabricated in HgCdTe layers grown by LPE on lattice-matched
CdZnTe and on lattice-mismatched PACE-1 have comparable R0A and quantum efficiency values. The distinguishing feature is that the noise is greater for devices fabricated in the layer
grown on lattice mismatched substrates, suggesting dislocations inherent in lattice mismatched material affects excess low
frequency noise but not zero bias impedance. 相似文献
20.
Theodore C. Harman 《Journal of Electronic Materials》1993,22(9):1165-1172
A Te-rich liquid-phase-epitaxial growth process is reported whereby reproducible Sb-doped layers are prepared with hole concentrations
and hole mobilities ranging from 1.8×1016 to 1.3×1019 cm−3 and 280 to 29 cm2/V s, respectively, at 77K for x-values ranging from 0.23 to 0.29. An effective electronic distribution coefficient for Sb
of 0.01 is calculated from the hole concentration at 77K and the concentration of Sb in the growth solution. The process for
group Va doping of low-x Hg1−x Cdx Te from Te-rich solutions and the procedure for the growth of a CdZnTe buffer layer on a CdTeSe substrate are described.
For Te-rich Cd−Zn−Te growth solutions the distribution coefficient of Zn was found to be 18. The growth of a structure consisting
of an Sb-doped HgCdTe epilayer on a CdZnTe buffer layer lattice matched (Δa/a<10−4) to a CdSeTe substrate has been demonstrated. 相似文献