Novel zero voltage switching dual-switch forward converter with ripple current cancellation

A zero voltage switching (ZVS) dual-switch forward converter with ripple current cancellation is presented. In the proposed converter, active clamp circuit is used to clamp the voltage stresses and to realise ZVS of all switching devices. Active clamp boost converter with power factor correction is used in the front stage of the proposed converter to draw a sinusoidal line current from the AC source and to maintain a constant voltage at the DC bus. The second stage of the proposed converter is a dual-switch forward converter with current doubler rectifier to obtain the isolated low output voltage. Active clamp circuit used in the DC/DC converter can recycle the energy stored in the leakage inductor and magnetising inductor so that the voltage stresses on the switches are limited and the ZVS feature is realised. The current doubler rectifier offers the ripple current cancellation at the output capacitor and reduces the current stress of the transformer secondary winding. The circuit configuration and principle of operation are analysed and discussed in detail. Experimental results with a laboratory prototype based on a 90-260 V_rms input and 12 V/30 A output were provided to verify the effectiveness of the proposed converter.     

Spectroelectrochemical reflection studies of gold nano-rod array membrane

Gold nano-rod array membranes (Au-NRM) were prepared by modification of the template method. A simple two-electrode device was assembled by holding an electrolyte solution between the Au-NRM and a transparent electrode. Small reflectance changes (less than 2%) in the visible band were induced on the Au-NRM surface by applying a DC voltage to the device. These changes could be visually observed. It was found based on a further evaluation that the reflectance changes responded very fast (less than 100 ms) to the DC voltage application, and were stable during the switching repetition (over 5000 times). When the cyclic scanning of the applied voltage to the device was carried out between -1.5 V and +1.5 V, the reflectance changes were increased over +1.0 V (-1.0 V). It was suggested from these experimental results that the reflectance changes were attributed to the surface oxidation and the deformation or mechanical motion of the Au nano-rod.     

Microfluidic T-form mixer utilizing switching electroosmotic flow

This paper presents a microfluidic T-form mixer utilizing alternatively switching electroosmotic flow. The microfluidic device is fabricated on low-cost glass slides using a simple and reliable fabrication process. A switching DC field is used to generate an electroosmotic force which simultaneously drives and mixes the fluid samples. The proposed design eliminates the requirements for moving parts within the microfluidic device and delicate external control systems. Two operation modes, namely, a conventional switching mode and a novel pinched switching mode, are presented. Computer simulation is employed to predict the mixing performance attainable in both operation modes. The simulation results are then compared to those obtained experimentally. It is shown that a mixing performance as high as 97% can be achieved within a mixing distance of 1 mm downstream from the T-junction when a 60 V/cm driving voltage and a 2-Hz switching frequency are applied in the pinched switching operation mode. This study demonstrates how the driving voltage and switching frequency can be optimized to yield an enhanced mixing performance. The novel methods presented in this study provide a simple solution to mixing problems in the micro-total-analysis-systems field.     

Integrated power management circuit for piezoelectronic generator in wireless monitoring system of orthopaedic implants

Piezoelectric (PZT) materials are capable of converting the mechanical energy of compression into electrical energy. With the recent advent of extremely low-power electrical devices, PZT generators have become attractive in many kinds of applications, especially for biomedical applications. Piezoelectronic generators are used in a wireless monitoring system of orthopaedic implants. Due to their poor source characteristics, the efficiency of PZT generator is low. A hybrid direct current (DC)?DC, comprising a switched capacitor (SC) DC?DC converter and a low dropout (LDO) linear voltage regulator, is presented to improve conversion efficiency. A bandgap reference (BGR) circuit which works in sub-threshold region is also presented. Because SC DC?DC converter works in the highest voltage region in this system, small power supply current, including supply current through BGR and other auxiliary modules, means low power consumption. BGR?s power supply voltage can be varied from 3 to 16 V. Its supply current is only 3.2 μA at 125 C and its temperature coefficient is 46 ppm. Stacked switches technique is proposed to reduce leakage current in switching process of SC converter. Simulation results show that the efficiency of SC?s converter can reach 88%, that of LDO can reach 80% and that of the overall system can reach 66%, including power consumption of all auxiliary components, which is far higher than previous work.     

室温下制备非晶ZnO薄膜及其电阻开关特性研究

室温下采用紫外固化的方法取代溶胶-凝胶方法中的高温退火制备了氧化锌薄膜, XRD分析结果表明薄膜为非晶的, XPS分析结果表明薄膜的主要成分是ZnO。在深紫外固化后的薄膜表面溅射Al作为顶电极获得Al/a-ZnO/FTO结构的器件,研究深紫外照射时间对器件电阻转变性能的影响, 进一步解释了深紫外固化的机制。研究表明: 经过充足时间(12 h)照射的器件表现出双极性电阻开关特性,阈值电压分布集中(-3.7 V<V_set<-2.9 V, 3.4 V< V_reset<4.3 V)且符合低电压工作的要求, 至少在4000 s内器件的高低阻态都没有发生明显的退化, 表现出了良好的存储器特性。Al/a-ZnO/FTO器件的这种电阻转变特性可以用空间电荷限制电流传导机制解释。     

交流电压源毫伏级量值准确测量的技术研究

基于电压比例和交直流转换技术,提出了一种对交流电压源的毫伏级量值进行准确测量的方法。采用自行研制的二进制级联结构电压比例装置和792A交直流转换标准,将被测交流电压源的毫伏级量值溯源至交流电压国家基准。实验采用替代测量法,通过选用不同电压比例和不同792A量程的组合,在55Hz~5kHz频率范围内,对1台5720A多功能校准源10~200mV范围的交流电压进行准确测量。结果表明,各毫伏级交流电压示值相对误差的绝对值均不超过±40μV/V,测量结果扩展不确定度优于80μV/V,满足交流电压源毫伏级量值溯源需求。     

Influence of oxidized layer on operating voltage and luminance of nanocrystalline silicon electroluminescent device

A direct current (DC) operating voltage and luminescence property of red electroluminescent (EL) devices with and/or without a silicon dioxide (SiO2) layer at interface between nanocrystalline Si (nc-Si) region and Si substrate has investigated. The removal of SiO2 layer in the EL device led to the lowering of DC operating voltage from 4.0 up to 2.0 V and the increase of luminescence intensity more than one order of magnitude. The external quantum efficiency of red luminescence from the EL device without the SiO2 layer at the DC operating voltage of 3.0 V was 0.5%. These were realized by the efficient and easy injection of carriers to the radiative recombination centers in the nc-Si region due to the removal of SiO2 layer. These results indicate that the removal of SiO2 layer is drastically improved the DC operating voltage and luminescence intensity for the nc-Si based EL device.     

一种脉宽调制的高稳定连续可调直流电压源

介绍了一种以深埋齐纳电压基准元件LTZ1000A主电路为基础,结合脉宽调制技术实现的在0～10 V范围内连续可调的高稳定直流电压源。选用精密电阻并采用适当的保温与隔离措施,实现了电压基准主电路输出高稳定7 V电压,其短期稳定性达到1.7×10^-8。利用具有相同温度系数和阻值的精密电阻组成比例升压电阻网络,使输出10 V电压的短期稳定性为2.4×10^-8。同时利用脉宽调制并经DC-DC转换电路及滤波电路得到0～10 V的电压输出,短期稳定性可在10^-7量级左右。     

Fabrication of TiO2 Nanotube Arrays by Rectified Alternating Current Anodization

Anodization is a popular method of preparing TiO₂ nanotube array films（TiNTs） by using direct current（DC）power as the driving voltage.In this study,three driving voltage modes,namely,the sine alternating current（sine） mode,the full-wave rectification of sine waves via four diodes（sine-4D,where D means diode） mode,and the DC mode,were used to prepare TiNTs by anodization.At 20 V,TiNTs were formed under sine-4D mode but only irregular porous TiO₂ films were formed under DC mode.At 50 V,TiNTs formed under both the sine-4D and DC modes.No TiNTs formed in the sine mode anodization at either 20 or 50 V.Compared with the DC mode,the sine-4D mode required a lower oxidation voltage for TiNT formation,which suggests that sine-4D is an economical,convenient,and efficient driving voltage for TiNT preparation by anodization.The morphologies and structures of TiNT samples anodized at 50 V in the sine-4D and DC modes at different oxidation time（1,5,10,30,60,and 120 min） were analyzed.TiNT growth processes were similar between the studied modes.However,the growth rate of the films was faster under the sine-4D mode than the DC mode during the first 30 min of anodization.     

6. Conductivity effects in amorphous chalcogenide films

Thin amorphous films of chalcogenide Te₄₈As₁₈Ge₆Si₂₈ were prepared and their current-voltage (I–V) characteristics were examined. Memory switching effects were observed which were stable and reproducible, but the switching voltage was found to depend on the restoring voltage in a regular way for cyclic switching. Furthermore, the time delay for an applied voltage pulse to cause switching may be related to the I–V curve prior the switching. This dependence seems to support an electronic mechanism of switching.     

Combined ZVS?ZCS topology for high-current direct current hybrid switches: design aspects and first measurements

Power electronic switches have been considered for load switching ever since their invention. This is because semiconductor switches enable fast, arc-less, reliable and maintenance-free switching. The main disadvantages in relation to conventional switches (i.e. circuit breakers), however, are their sensitivity to transients, high on-state losses and the presence of leakage current. The advantages of both types of switches can be exploited by combining the semiconductor and the mechanical switch and thereby their disadvantages, arc formation and regular maintenance, can also be eliminated. For hybrid switches (HSs), both zero voltage switching (ZVS) and zero current switching (ZCS) are frequently used. A new hybrid switching topology has been developed where both ZVS and ZCS techniques are applied to the mechanical switch. The `symbiosis' between these solid-state switching techniques and a mechanical switch eliminates several of the disadvantages, resulting in a more reliable direct current (DC) HS that requires less maintenance. The first turn-off measurement (up to 5 kA) from a prototype that has been developed for a 3-kV DC grid is presented     

Design,analysis and application of high set-up ZVT DC–DC converter with direct power transfer

In this paper, a new snubber cell for soft switched high set-up DC–DC converters is introduced. The main switch is turned on by zero-voltage transition and turned off by zero-voltage switching (ZVS). The main diode is turned on by ZVS and turned off by zero-current switching. Besides, all auxiliary semiconductor devices are soft switched. Any semiconductor device does not expose the additional current or voltage stress. The new snubber transfers some of the circulation energy to the output side when it ensures soft switching for main semiconductor devices. Thus, the current stress of auxiliary switch is significantly reduced. Besides, the total efficiency of converter is high due to the direct power transfer feature of new converter. A theoretical and mathematical analysis of the new converter is presented, and also verified with experimental set-up at 500 W and 100 kHz. Finally, the overall efficiency of new converter is 97.4% at nominal output power.     

A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing Al nanocrystals

A switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-Al) when the nc-Al is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-Al. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-Al with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years.     

Evaluation of The Performance of Portable New Design High DC Voltage Measuring System up 40 kV

Portable DC high voltage (HV) measuring system up to 40 kV has been designed and built with DC HV probe and AC/DC voltmeter developed at TUBITAK UME (The Scientific and Technological Research Council of Turkey). The structure and construction of the HV probe and DC voltmeter for evaluating their performance are described. The comparison measurements have been done using the reference DC HV system up to 40 kV. The voltmeter described here was developed for using in the measurement or calibration of DC HVs with high input impedance greater than 100 MΩ. The voltage error obtained in comparison measurements is less than 100 μV/V at 40 kV.     

直流电阻分压器的非线性机理研究

针对电阻分压器在直流低电压分压时出现的非线性现象,采用独立影响因素的分析方法,对直流电阻分压器的非线性机理进行了研究.通过分析和实验验证,确定了造成非线性的原因是工作电流的变化导致电阻分压器输出热电势的变化.据此,建立了非线性数学模型,提出了非线性修正方法.利用该方法,±200μV直流电压输出非线性误差小于5 nV.     

敏感用户高品质交-直流级联供电方案研究

工业过程中大量使用的变频器(variable frequency drive,VFD)在采用传统交流供电时易受到电压暂降影响,传统治理方式存在检测延时、控制复杂等问题。为此,该文从敏感负荷变频器在电网扰动工况下的供电需求量化出发,围绕供电拓扑设计、DC/DC变换器的控制策略及储能单元容量配置等方面,构建一种实用化工业用交-直流级联供电方案。该文利用电压暂降过程中直流供电回路与敏感负荷间的压差自感应控制,实现交-直流供电回路无扰动切换,提高电压暂降治理响应的快速性;采用两相交错并联DC/DC变换器接入集中式储能,减少储能系统纹波系数,并给出两相均流控制方法。最后,通过Matlab/Simulink中的建模仿真与样机的实验测试,验证所提方案能够在交流系统发生不同严重程度电压暂降过程中为各类敏感负荷提供稳定的连续供电,为解决工业敏感用户高品质供电问题提供可实用的新思路。     

参考级直流标准电压源自动校准系统

针对参考级直流标准电压源范围宽、指标高,校准流程复杂的问题,研制了一套基于程控低热电势开关矩阵的参考级直流标准电压源自动校准系统。介绍了系统的组成、低热电势开关矩阵的研制、参考级直流标准电压源的校准方法,并对系统进行了不确定度评估,经评定直流电压100V不确定度达到2×10^-6(k=2)。     

Comparison of memory switching operation in a number of amorphous chalcogenide systems

A number of chalcogenide glasses were investigated for thin film switching applications. Two ranges of threshold voltage were of interest, 15 and 30 V. The switching performance of thin film devices was evaluated and rated on a simple numerical scale. The memory glasses based on the Ge-Te eutectic gave generally satisfactory performance. Selenium-based glasses exhibited high threshold voltage in thin film form, but had limited lifetime. Threshold voltages of about 30 V were obtained from Bi-As-Se glasses; these proved difficult to lock “ON” and possible reasons for this are discussed. Measurements on the bulk properties were used to give an indication of the properties to be expected from thin films of the corresponding glasses.     

Field-effect-transistor self-electro-optic-effect-device (FET-SEED) electrically addressed differential modulator array

We describe a 6 × 6 array of electrically addressed field-effect-transistor self-electro-optic-effect-device differential modulators in which each element has a single-stage amplifier to permit an input voltage of less than 1 V to control the output modulators, which can operate at as high as 10 V. The variations in the switching voltages across the array are less than ±70 mV, and the individual array elements are operated at as high as 2 Gbits/s. We also measure cross talk between adjacent elements within the array, measure the dependence of the switching time on the input voltage swing, and calculate the dependence of the switching time that is due to the photocurrent of the modulators.     

A single-stage AC/DC converter based on zero voltage switching LLC resonant topology

A zero voltage switching based on LLC resonant topology is proposed to implement a single-stage AC/DC converter which performs both input-current harmonics reduction and power factor correction (PFC). By integrating a boost-PFC cell and an LLC resonant DC/DC cell into a single power conversion stage, the power losses in the secondary rectifier diodes and the primary switches can be significantly reduced. The proposed architecture exhibits extreme simplicity and lower cost while providing nearly unity power factor and well-regulated output; hence, the proposed converter is very suitable for low power level applications. The operating principles and design procedures for the proposed converter are analysed and discussed. Simulation and experimental results from a 125 W laboratory prototype are provided to verify the feasibility.